
TPD3S014DBV
Texas InstrumentsExtended
-40℃~+125℃ 20nA 4.5V~5.5V 500mA Not supported Not supported Soft-start、Under-voltage lockout、Overcurrent Protection、Short-Circuit Protection、Reverse current blocking、Output discharge function SOT-23-6 Power Distribution Switches ROHS
- Part id
- ti/TPD3S014DBV
- Category
- Power Distribution Switches
- Package
- SOT-23-6
- Pins
- 6
- In stock
- 10,408 at JLCPCB (C87384)
- Used on
- 14 open-source boards
Overview
The TPD3S014DBV is a power Distribution Switche made by Texas Instruments in a SOT-23-6 package with 6 pins. -40℃~+125℃ 20nA 4.5V~5.5V 500mA Not supported Not supported Soft-start、Under-voltage lockout、Overcurrent Protection、Short-Circuit Protection、Reverse current blocking、Output discharge function SOT-23-6 Power Distribution Switches ROHS.
PCBKit's library has its KiCad symbol (Power_Protection:TPD3S014, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23-6, from KiCad's library), ready for a KiCad board. 10,408 are in stock at JLCPCB (part C87384). 14 open-source boards in 10 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
15- Supply, least
- 4.5 V · VIN, recommended operating min · p. 4
- Supply, most
- 5.5 V · VIN, recommended operating max · p. 4
- Supply, absolute maximum
- 6 V · VIN, absolute max · p. 4
- Works from
- -40 °C · Ambient temperature min · p. 1
- Works up to
- 85 °C · Ambient temperature max · p. 1
- Junction, hottest
- 125 °C · Operating junction temperature max · p. 4
- Takes working
- 66 µA · VIN, switch enabled, no load, typical · p. 6
- Takes at most
- 94 µA · VIN, switch enabled, no load, max over temperature · p. 6
- Takes asleep
- 20 nA · VIN, switch disabled, no load, typical · p. 6
- Gives
- 500 mA · Continuous output current max, TPD3S014 · p. 4
- Current limit
- 850 mA · TPD3S014 current limit typical · p. 6
- Junction to air (DBV (SOT-23))
- 185.8 K/W · Junction-to-ambient thermal resistance · p. 5
- Junction to case (DBV (SOT-23))
- 124.7 K/W · Junction-to-case top thermal resistance · p. 5
- Junction to board (DBV (SOT-23))
- 32 K/W · Junction-to-board thermal resistance · p. 5
- Edge
- 400 µs · Output fall time typical, CL = 1 uF, RL = 100 Ω, VIN = 5 V · p. 6
What it is and has
6- Output discharge
- Integrated · p. 1
- Reverse current blocking
- Supported · p. 1
- Short-circuit protection
- Supported · p. 1
- Over temperature protection
- With auto-restart · p. 1
- Soft start
- Built-in · p. 1
- ESD protection
- Two-channel TVS diode array for USB interfaces · p. 12
Around it
1- cap 0.1-µF or greater
- between IN and GND; Ceramic capacitor, close to the IC. · p. 3
Specifications
59| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Input voltage VIN | min -0.3 · max 6 V | 4 | |
| Input voltage VOUT | min -0.3 · max 6 V | 4 | |
| Input voltage EN | min -0.3 · max 6 V | 4 | |
| Input voltage D1 | min -0.3 · max 6 V | 4 | |
| Input voltage D2 | min -0.3 · max 6 V | 4 | |
| Voltage from VIN to VOUT | min -6 · max 6 V | 4 | |
| Storage temperature, Tstg Tstg | min -65 · max 150 °C | 4 | |
| Electrostatic discharge V(ESD) | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001; all pins; ± rating | max 2000 V | 4 |
| Electrostatic discharge V(ESD) | Charged device model (CDM), per JEDEC specification JESD22-C101; all pins; ± rating | max 500 V | 4 |
| Electrostatic discharge V(ESD) | IEC 61000-4-2 contact discharge; VOUT, Dx pins; ± rating | max 12000 V | 4 |
| Electrostatic discharge V(ESD) | IEC 61000-4-2 air-gap discharge; VOUT, Dx pins; ± rating | max 15000 V | 4 |
| Input voltage VIN | min 4.5 · max 5.5 V | 4 | |
| Input voltage, EN VEN | min 0 · max 5.5 V | 4 | |
| High-level Input voltage, EN VIH | min 2 V | 4 | |
| Low-level Input voltage, EN VIL | max 0.7 V | 4 | |
| Input decoupling capacitance, IN to GND CIN | min 0.1 uF | 4 | |
| Continuous output current (TPD3S014) IOUT | TPD3S014 | max 0.5 A | 4 |
| Operating junction temperature TJ | min -40 · max 125 °C | 4 | |
| Junction-to-ambient thermal resistance RθJA | DBV (SOT-23), 6 pins | typ 185.8 °C/W | 5 |
| Junction-to-case (top) thermal resistance RθJC(top) | DBV (SOT-23), 6 pins | typ 124.7 °C/W | 5 |
| Junction-to-board thermal resistance RθJB | DBV (SOT-23), 6 pins | typ 32 °C/W | 5 |
| Junction-to-top characterization parameter ψJT | DBV (SOT-23), 6 pins | typ 23.7 °C/W | 5 |
| Junction-to-board characterization parameter ψJB | DBV (SOT-23), 6 pins | typ 31.5 °C/W | 5 |
| See the Power Dissipation and Junction Temperature section RθJA(Custom) | DBV (SOT-23), 6 pins | typ 120.3 °C/W | 5 |
| Input – Output resistance RDS(on) | TPD3S014; VIN = 5 V, VEN = VIN, IOUT = 0 A | typ 97 · max 110 mΩ | 5 |
| Input – Output resistance RDS(on) | TPD3S014: –40°C ≤ (TJ, TA) ≤ 85°C; VIN = 5 V, VEN = VIN, IOUT = 0 A | typ 96 · max 130 mΩ | 5 |
| Current limit, see Figure 27 IOS | TPD3S014; VIN = 5 V, VEN = VIN | min 0.67 · typ 0.85 · max 1.01 A | 5 |
| Supply current, switch disabled ISD | VIN = 5 V, IOUT = 0A | typ 0.02 · max 1 uA | 5 |
| Supply current, switch disabled ISD | –40°C ≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A | max 2 uA | 5 |
| Supply current, switch enabled ISE | VIN = 5 V, VEN = VIN, IOUT = 0A | typ 66 · max 74 uA | 5 |
| Supply current, switch enabled ISE | –40°C ≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A | max 85 uA | 5 |
| Reverse leakage current IREV | VOUT = 5 V, VIN = 0 V, Measure IVOUT | typ 0.2 · max 1 uA | 5 |
| Output pull-down resistance RPD | VIN = VOUT = 5 V, disabled | min 400 · typ 456 · max 600 Ω | 5 |
| Differential capacitance between the D1, D2 lines ΔCIO | ƒ = 1 MHz, VIO = 2.5 V | typ 0.02 pF | 5 |
| (D1, D2 to GND) CIO | ƒ = 1 MHz, VIO = 2.5 V | typ 1.4 pF | 5 |
| Dynamic on-resistance D1, D2 IEC clamps RDYN | Dx to GND; GND to Dx | typ 0.2 Ω | 5 |
| Input – output resistance RDS(on) | TPD3S014; 4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A | typ 97 · max 154 mΩ | 6 |
| Threshold | Enable input (EN); Input rising | min 1 · typ 1.45 · max 2 V | 6 |
| Hysteresis | Enable input (EN) | typ 0.13 V | 6 |
| Leakage current | Enable input (EN); VEN = 0 V | min -1 · typ 0 · max 1 uA | 6 |
| Turn on time tON | VIN = 5 V, CL = 1 uF, RL = 100 Ω, EN ↑; See Figure 26 | min 1 · typ 1.6 · max 2.2 ms | 6 |
| Turn off time tOFF | VIN = 5 V, CL = 1 uF, RL = 100 Ω, EN ↓; See Figure 26 | min 1.7 · typ 2.1 · max 2.7 ms | 6 |
| Rise time, output tR | CL = 1 uF, RL = 100 Ω, VIN = 5 V, See Figure 25 | min 0.4 · typ 0.64 · max 0.9 ms | 6 |
| Fall time, output tF | CL = 1 uF, RL = 100 Ω, VIN = 5 V, See Figure 25 | min 0.25 · typ 0.4 · max 0.8 ms | 6 |
| Current limit, see Figure 27 IOS | TPD3S014 | min 0.65 · typ 0.85 · max 1.05 A | 6 |
| Short-circuit response time tIOS | VIN = 5 V (see Figure 27); One Half full load → RSHORT = 50 mΩ; Measure from application to when current falls below 120% of final value | typ 2 us | 6 |
| Supply current, switch disabled ISD | IOUT = 0 A | typ 0.02 · max 10 uA | 6 |
| Supply current, switch enabled ISE | IOUT = 0 A | typ 66 · max 94 uA | 6 |
| Reverse leakage current IREV | VOUT = 5.5 V, VIN = 0 V, Measure IVOUT | typ 0.2 · max 20 uA | 6 |
| Rising threshold VUVLO | Undervoltage lockout; VIN↑ | min 3.5 · typ 3.77 · max 4 V | 6 |
| Hysteresis | Undervoltage lockout; VIN↓ | typ 0.14 V | 6 |
| Output pull-down resistance RPD | VIN = 4 V, VOUT = 5 V, Disabled | min 350 · typ 545 · max 1200 Ω | 6 |
| Output pull-down resistance RPD | VIN = 5 V, VOUT = 5 V, Disabled | min 300 · typ 456 · max 800 Ω | 6 |
| Rising threshold (TJ) TSHDN | Thermal shutdown; In current limit | min 135 °C | 6 |
| Rising threshold (TJ) TSHDN | Thermal shutdown; Not in current limit | min 155 °C | 6 |
| Hysteresis | Thermal shutdown | typ 20 °C | 6 |
| Input leakage current (D1, D2) II | VI = 3.3 V | typ 0.02 · max 1 uA | 6 |
| Diode forward voltage (D1, D2); Lower clamp diode VD | IO = 8 mA | max 0.95 V | 6 |
| Breakdown voltage (D1, D2) VBR | IBR = 1 mA | min 6 V | 6 |
Pins, by the datasheet
6- 1 EN
- Enable input; logic high turns on power switch. · p. 3
- 2 GND
- Ground. · p. 3
- 3 IN
- Input voltage and power-switch drain; connect a 0.1-uF or greater ceramic capacitor to GND close to the IC. · p. 3
- 4 OUT
- Power-switch output; connect to load. · p. 3
- 5 D1
- USB data+ or USB data–. · p. 3
- 6 D2
- USB data+ or USB data–. · p. 3
- 2 layers104.1 × 58.4 mm

- 4 layers94 × 79.6 mm

- 4 layers60 × 22 mm

- 4 layers170 × 170 mm

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Questions
Is there a KiCad symbol and footprint for the TPD3S014DBV?
Yes. The symbol is Power_Protection:TPD3S014 and the footprint Package_TO_SOT_SMD:SOT-23-6, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the TPD3S014DBV?
SOT-23-6, with 6 pins. Its footprint is drawn on this page.
Where is the TPD3S014DBV datasheet?
Texas Instruments publishes it: the Datasheet link on this page opens it.
Where can I order the TPD3S014DBV?
JLCPCB lists it as part C87384, with 10,408 in stock; the sellers' links on this page open their listings.
What can replace the TPD3S014DBV?
Parts like it in the library: the TPS22918DBV by Texas Instruments, the TPS2553DBV by Texas Instruments, the AP2553W6 by Diodes Incorporated and the TPS27081ADDC by Texas Instruments. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the TPD3S014DBV?
14 boards in 10 repositories on GitHub; the most starred are listed on this page, with their KiCad files.