
STM32F030F4P6
STMicroelectronicsExtended
-40℃~+85℃ 12bit 15 16KB 2.4V~3.6V 32 Bit 48MHz 4KB ARM Cortex-M0 Built-in FLASH TSSOP-20 Microcontrollers (MCU/MPU/SOC) ROHS
- Part id
- st/STM32F030F4P6
- Category
- Microcontrollers (MCU, MPU, SOC)
- Package
- TSSOP-20
- Pins
- 20
- In stock
- 59,987 at JLCPCB (C89040)
- Used on
- 41 open-source boards
Overview
The STM32F030F4P6 is a microcontroller made by STMicroelectronics in a TSSOP-20 package with 20 pins. -40℃~+85℃ 12bit 15 16KB 2.4V~3.6V 32 Bit 48MHz 4KB ARM Cortex-M0 Built-in FLASH TSSOP-20 Microcontrollers (MCU/MPU/SOC) ROHS.
PCBKit's library has its KiCad symbol (MCU_ST_STM32F0:STM32F030F4Px, from KiCad's library) and its footprint (Package_SO:TSSOP-20_4.4x6.5mm_P0.65mm, from KiCad's library), ready for a KiCad board. 59,987 are in stock at JLCPCB (part C89040). 41 open-source boards in 30 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
13- Supply, least
- 2.4 V · VDD, recommended operating minimum · p. 40
- Supply, most
- 3.6 V · VDD, recommended operating maximum · p. 40
- Supply, absolute maximum
- 4 V · VDD and VDDA, absolute maximum · p. 38
- Works from
- -40 °C · minimum ambient, suffix 6, maximum power dissipation · p. 40
- Works up to
- 85 °C · maximum ambient, suffix 6, maximum power dissipation · p. 40
- Works up to
- 105 °C · maximum ambient at low power dissipation, subject to TJ maximum · p. 40
- Junction, hottest
- 105 °C · maximum operating junction temperature, suffix 6 · p. 40
- Junction, hottest
- 150 °C · absolute maximum junction temperature · p. 39
- Takes working
- 23.46 mA · sum of VDD and VDDA typical run currents, 48 MHz, Flash, peripherals enabled, 3.3 V · p. 45
- Takes asleep
- 5.3 µA · sum of VDD and VDDA typical standby currents, LSI and IWDG on, VDDA monitoring on, 3.6 V · p. 44
- A pin gives at most
- 25 mA · absolute maximum current sunk by any I/O and control pin · p. 39
- Junction to air (TSSOP20)
- 110 K/W · junction-to-ambient thermal resistance · p. 83
- A pin gives at most
- 20 mA · GPIO source or sink max, relaxed VOL/VOH · p. 60
What it is and has
13- Core
- ARM 32-bit Cortex-M0 CPU · p. 1
- Maximum CPU frequency
- 48 MHz · p. 1
- CRC
- CRC calculation unit · p. 1
- DMA
- 5-channel controller · p. 1
- Low power modes
- Sleep, Stop, Standby · p. 1
- Reset
- Power-on/Power down reset (POR/PDR) · p. 1
- Debug
- Serial wire debug (SWD) · p. 1
- CPU frequency
- up to 48 MHz · p. 1
- Basic timer
- One 16-bit basic timer · p. 1
- Watchdog timers
- Independent and system watchdog timers · p. 1
- SysTick
- 24-bit downcounter · p. 1
- Crystal oscillator
- 4 to 32 MHz · p. 1
- ADC
- 12-bit · p. 64
Around it
1- diode Schottky
- between standard analog input pin and ground; Recommended for standard analog pins which may inject negative current. · p. 65
Specifications
233| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| External main supply voltage (including VDDA and VDD) VDD–VSS | Absolute maximum ratings | min -0.3 · max 4 V | 38 |
| Allowed voltage difference for VDD > VDDA VDD–VDDA | VDD > VDDA | max 0.4 V | 38 |
| Input voltage on TTa pins VIN | Minimum VSS 0.3 | max 4 V | 38 |
| Input voltage on any other pin VIN | Minimum VSS 0.3 | max 4 V | 38 |
| Variations between different VDD power pins |VDDx| | max 50 mV | 38 | |
| Variations between all the different ground pins |VSSX VSS| | max 50 mV | 38 | |
| Total current into sum of all VDD_x and VDDSDx power lines (source) IVDD | Absolute maximum ratings | max 120 mA | 39 |
| Total current out of sum of all VSS_x and VSSSD ground lines (sink) IVSS | Absolute maximum ratings | max -120 mA | 39 |
| Maximum current into each VDD_x or VDDSDx power pin (source) IVDD(PIN) | Absolute maximum ratings | max 100 mA | 39 |
| Maximum current out of each VSS_x or VSSSD ground pin (sink) IVSS(PIN) | Absolute maximum ratings | max -100 mA | 39 |
| Output current sunk by any I/O and control pin IIO(PIN) | Absolute maximum ratings | max 25 mA | 39 |
| Output current source by any I/O and control pin IIO(PIN) | Absolute maximum ratings | max -25 mA | 39 |
| Total output current sunk by sum of all IOs and control pins IIO(PIN) | Absolute maximum ratings | max 80 mA | 39 |
| Total output current sourced by sum of all IOs and control pins IIO(PIN) | Absolute maximum ratings | max -80 mA | 39 |
| Injected current on FT, FTf and B pins IINJ(PIN) | Absolute maximum limits printed as -5/+0 | min -5 · max 0 mA | 39 |
| Injected current on TC and RST pin IINJ(PIN) | Absolute maximum magnitude ±5 | max 5 mA | 39 |
| Injected current on TTa pins IINJ(PIN) | Absolute maximum magnitude ±5 | max 5 mA | 39 |
| Total injected current (sum of all I/O and control pins) IINJ(PIN) | Absolute maximum magnitude ±25; absolute sum of positive and negative injected currents | max 25 mA | 39 |
| Storage temperature range TSTG | min -65 · max 150 °C | 39 | |
| Maximum junction temperature TJ | Absolute maximum ratings | max 150 °C | 39 |
| Internal AHB clock frequency fHCLK | min 0 · max 48 MHz | 40 | |
| Internal APB clock frequency fPCLK | min 0 · max 48 MHz | 40 | |
| Standard operating voltage VDD | min 2.4 · max 3.6 V | 40 | |
| Analog operating voltage VDDA | Must have a potential equal to or higher than VDD | min 2.4 · max 3.6 V | 40 |
| Input voltage on TTa pins VIN | Minimum VSS –0.3 | max 4 V | 40 |
| Input voltage on any other pin VIN | Minimum VSS –0.3 | max 4 V | 40 |
| Power dissipation at TA = 85 °C for suffix 6 PD | TSSOP20 | max 182 mW | 40 |
| Ambient temperature for 6 suffix version TA | Maximum power dissipation | min -40 · max 85 °C | 40 |
| Ambient temperature for 6 suffix version TA | Low power dissipation; TJ must not exceed TJmax | min -40 · max 105 °C | 40 |
| Junction temperature range TJ | 6 suffix version | min -40 · max 105 °C | 40 |
| Supply current in Run mode, code executing from Flash IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 22 · max 22.8 mA | 43 |
| Supply current in Run mode, code executing from Flash IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL on; 24 MHz; maximum at TA = 85 °C | typ 12.2 · max 13.2 mA | 43 |
| Supply current in Run mode, code executing from Flash IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 4.4 · max 5.2 mA | 43 |
| Supply current in Run mode, code executing from RAM IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 22.2 · max 23.2 mA | 43 |
| Supply current in Run mode, code executing from RAM IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL on; 24 MHz; maximum at TA = 85 °C | typ 11.2 · max 12.2 mA | 43 |
| Supply current in Run mode, code executing from RAM IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 4 · max 4.5 mA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 14 · max 15.3 mA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL on; 24 MHz; maximum at TA = 85 °C | typ 7.3 · max 7.8 mA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDD | VDD = 3.6 V; all peripherals enabled; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 2.6 · max 2.9 mA | 43 |
| Supply current in Run mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSE bypass, PLL on; 48 MHz; maximum at TA = 85 °C | typ 175 · max 215 uA | 43 |
| Supply current in Run mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSE bypass, PLL off; 8 MHz; maximum at TA = 85 °C | typ 3.9 · max 4.9 uA | 43 |
| Supply current in Run mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSE bypass, PLL off; 1 MHz; maximum at TA = 85 °C | typ 3.9 · max 4.1 uA | 43 |
| Supply current in Run mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 244 · max 275 uA | 43 |
| Supply current in Run mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 85 · max 105 uA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSE bypass, PLL on; 48 MHz; maximum at TA = 85 °C | typ 174 · max 215 uA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSE bypass, PLL off; 8 MHz; maximum at TA = 85 °C | typ 3.9 · max 4.9 uA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSE bypass, PLL off; 1 MHz; maximum at TA = 85 °C | typ 3.9 · max 4.9 uA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 244 · max 299 uA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDDA | VDDA = 3.6 V; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 85 · max 105 uA | 43 |
| Supply current in Stop mode IDD | VDD = VDDA = 3.6 V; regulator in run mode, all oscillators OFF; maximum at TA = 85 °C | typ 19 · max 48 uA | 44 |
| Supply current in Stop mode IDD | VDD = VDDA = 3.6 V; regulator in low-power mode, all oscillators OFF; maximum at TA = 85 °C | typ 5 · max 32 uA | 44 |
| Supply current in Standby mode IDD | VDD = VDDA = 3.6 V; LSI ON and IWDG ON | typ 2 uA | 44 |
| Supply current in Stop mode IDDA | VDD = VDDA = 3.6 V; VDDA monitoring ON; regulator in run or low power mode, all oscillators OFF; maximum at TA = 85 °C | typ 2.9 · max 3.5 uA | 44 |
| Supply current in Standby mode IDDA | VDD = VDDA = 3.6 V; VDDA monitoring ON; LSI ON and IWDG ON | typ 3.3 uA | 44 |
| Supply current in Standby mode IDDA | VDD = VDDA = 3.6 V; VDDA monitoring ON; LSI OFF and IWDG OFF; maximum at TA = 85 °C | typ 2.8 · max 3.5 uA | 44 |
| Supply current in Stop mode IDDA | VDD = VDDA = 3.6 V; VDDA monitoring OFF; regulator in run mode or low power, all oscillators OFF | typ 1.7 uA | 44 |
| Supply current in Standby mode IDDA | VDD = VDDA = 3.6 V; VDDA monitoring OFF; LSI ON and IWDG ON | typ 2.3 uA | 44 |
| Supply current in Standby mode IDDA | VDD = VDDA = 3.6 V; VDDA monitoring OFF; LSI OFF and IWDG OFF | typ 1.4 uA | 44 |
| Supply current in Run mode from VDD supply IDD | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals enabled | typ 23.3 mA | 45 |
| Supply current in Run mode from VDD supply IDD | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals disabled | typ 11.5 mA | 45 |
| Supply current in Run mode from VDD supply IDD | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals enabled | typ 4.5 mA | 45 |
| Supply current in Run mode from VDD supply IDD | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals disabled | typ 3 mA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals enabled | typ 158 uA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals disabled | typ 158 uA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals enabled | typ 2.43 uA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD = VDDA = 3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals disabled | typ 2.43 uA | 45 |
| Electrostatic discharge voltage (human body model) VESD(HBM) | TA = +25 °C, conforming to JESD22-A114; class 2 | max 2000 V | 56 |
| Electrostatic discharge voltage (charge device model) VESD(CDM) | TA = +25 °C, conforming to JESD22-C101; class II | max 500 V | 56 |
| Thermal resistance junction-ambient JA | TSSOP20; value column | typ 110 °C/W | 83 |
| External main supply voltage (including VDDA and VDD) VDD–VSS | min -0.3 · max 4 V | 38 | |
| Input voltage on TTa pins VIN | max 4 V | 38 | |
| Input voltage on any other pin VIN | max 4 V | 38 | |
| Total current into sum of all VDD_x and VDDSDx power lines (source) IVDD | max 120 mA | 39 | |
| Total current out of sum of all VSS_x and VSSSD ground lines (sink) IVSS | max -120 mA | 39 | |
| Maximum current into each VDD_x or VDDSDx power pin (source) IVDD(PIN) | max 100 mA | 39 | |
| Maximum current out of each VSS_x or VSSSD ground pin (sink) IVSS(PIN) | max -100 mA | 39 | |
| Output current sunk by any I/O and control pin IIO(PIN) | max 25 mA | 39 | |
| Output current source by any I/O and control pin IIO(PIN) | max -25 mA | 39 | |
| Total output current sunk by sum of all IOs and control pins IIO(PIN) | max 80 mA | 39 | |
| Total output current sourced by sum of all IOs and control pins IIO(PIN) | max -80 mA | 39 | |
| Maximum junction temperature TJ | max 150 °C | 39 | |
| Input voltage on TTa pins VIN | max 4 V | 40 | |
| Input voltage on any other pin VIN | max 4 V | 40 | |
| VDD rise time rate tVDD | min 0 us/V | 41 | |
| VDD fall time rate tVDD | min 20 us/V | 41 | |
| VDDA rise time rate tVDDA | min 0 us/V | 41 | |
| VDDA fall time rate tVDDA | min 20 us/V | 41 | |
| Power on/power down reset threshold VPOR/PDR | Falling edge | min 1.8 · typ 1.88 · max 2.06 V | 41 |
| Power on/power down reset threshold VPOR/PDR | Rising edge | min 1.84 · typ 1.92 · max 2.1 V | 41 |
| PDR hysteresis VPDRhyst | typ 40 mV | 41 | |
| Reset temporization tRSTTEMPO | min 1.5 · typ 2.5 · max 4.5 ms | 41 | |
| Internal reference voltage VREFINT | –40 °C < TA < +85 °C | min 1.16 · typ 1.2 · max 1.24 V | 41 |
| ADC sampling time when reading the internal reference voltage TS_vrefint | typ 5.1 · max 17.1 us | 41 | |
| Internal reference voltage spread over the temperature range VREFINT | VDDA = 3 V ±10 mV | max 10 mV | 42 |
| Temperature coefficient TCoeff | max 100 ppm/°C | 42 | |
| Supply current in Run mode, code executing from Flash IDD | All peripherals enabled; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 22 · max 22.8 mA | 43 |
| Supply current in Run mode, code executing from Flash IDD | All peripherals enabled; HSI clock, PLL on; 24 MHz; maximum at TA = 85 °C | typ 12.2 · max 13.2 mA | 43 |
| Supply current in Run mode, code executing from Flash IDD | All peripherals enabled; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 4.4 · max 5.2 mA | 43 |
| Supply current in Run mode, code executing from RAM IDD | All peripherals enabled; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 22.2 · max 23.2 mA | 43 |
| Supply current in Run mode, code executing from RAM IDD | All peripherals enabled; HSI clock, PLL on; 24 MHz; maximum at TA = 85 °C | typ 11.2 · max 12.2 mA | 43 |
| Supply current in Run mode, code executing from RAM IDD | All peripherals enabled; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 4 · max 4.5 mA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDD | All peripherals enabled; HSI clock, PLL on; 48 MHz; maximum at TA = 85 °C | typ 14 · max 15.3 mA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDD | All peripherals enabled; HSI clock, PLL on; 24 MHz; maximum at TA = 85 °C | typ 7.3 · max 7.8 mA | 43 |
| Supply current in Sleep mode, code executing from Flash or RAM IDD | All peripherals enabled; HSI clock, PLL off; 8 MHz; maximum at TA = 85 °C | typ 2.6 · max 2.9 mA | 43 |
| Supply current in Run mode from VDD supply IDD | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals enabled | typ 23.3 mA | 45 |
| Supply current in Run mode from VDD supply IDD | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals disabled | typ 11.5 mA | 45 |
| Supply current in Run mode from VDD supply IDD | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals enabled | typ 4.5 mA | 45 |
| Supply current in Run mode from VDD supply IDD | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals disabled | typ 3 mA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals enabled | typ 158 uA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 48 MHz; peripherals disabled | typ 158 uA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals enabled | typ 2.43 uA | 45 |
| Supply current in Run mode from VDDA supply IDDA | VDD=VDDA=3.3 V; HSE crystal clock 8 MHz; fHCLK = 8 MHz; peripherals disabled | typ 2.43 uA | 45 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 0 pF; C = CINT + CEXT + CS; fSW = 4 MHz | typ 0.18 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 0 pF; C = CINT + CEXT + CS; fSW = 8 MHz | typ 0.37 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 0 pF; C = CINT + CEXT + CS; fSW = 16 MHz | typ 0.76 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 0 pF; C = CINT + CEXT + CS; fSW = 24 MHz | typ 1.39 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 0 pF; C = CINT + CEXT + CS; fSW = 48 MHz | typ 2.188 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 22 pF; C = CINT + CEXT + CS; fSW = 4 MHz | typ 0.49 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 22 pF; C = CINT + CEXT + CS; fSW = 8 MHz | typ 0.94 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 22 pF; C = CINT + CEXT + CS; fSW = 16 MHz | typ 2.38 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 22 pF; C = CINT + CEXT + CS; fSW = 24 MHz | typ 3.99 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 47 pF; C = CINT + CEXT + CS; fSW = 4 MHz | typ 0.81 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 47 pF; C = CINT + CEXT + CS; fSW = 8 MHz | typ 1.7 mA | 47 |
| I/O current consumption ISW | VDD = 3.3 V; CEXT = 47 pF; fSW = 16 MHz | typ 3.67 mA | 47 |
| Wakeup from Stop mode tWUSTOP | VDD = 3.3 V; regulator in run mode; 8-MHz HSI RC oscillator | typ 4.2 · max 5 us | 47 |
| Wakeup from Standby mode tWUSTANDBY | VDD = 3.3 V; 8-MHz HSI RC oscillator | typ 50.96 us | 47 |
| Wakeup from Sleep mode tWUSLEEP | VDD = 3.3 V; 8-MHz HSI RC oscillator | typ 1.1 us | 47 |
| Oscillator frequency fOSC_IN | min 4 · typ 8 · max 32 MHz | 50 | |
| Feedback resistor RF | typ 200 k | 50 | |
| HSE current consumption IDD | During startup | max 8.5 mA | 50 |
| HSE current consumption IDD | VDD=3.3 V, Rm= 45, CL=10 pF@8 MHz | typ 0.5 mA | 50 |
| HSE current consumption IDD | VDD=3.3 V, Rm= 30, CL=20 pF@32 MHz | typ 1.5 mA | 50 |
| Oscillator transconductance gm | Startup | min 10 mA/V | 50 |
| Startup time tSU(HSE) | VDD is stabilized | typ 2 ms | 50 |
| LSE current consumption IDD | LSEDRV[1:0]=00, lower driving capability | typ 0.5 uA | 51 |
| LSE current consumption IDD | LSEDRV[1:0]=01, medium low driving capability | typ 0.8 uA | 51 |
| LSE current consumption IDD | LSEDRV[1:0]=10, medium high driving capability | typ 1.1 uA | 51 |
| LSE current consumption IDD | LSEDRV[1:0]=11, higher driving capability | typ 1.4 uA | 51 |
| Oscillator transconductance gm | LSEDRV[1:0]=00, lower driving capability | min 5 uA/V | 51 |
| Oscillator transconductance gm | LSEDRV[1:0]=01, medium low driving capability | min 8 uA/V | 51 |
| Oscillator transconductance gm | LSEDRV[1:0]=10, medium high driving capability | min 15 uA/V | 51 |
| Oscillator transconductance gm | LSEDRV[1:0]=11, higher driving capability | min 25 uA/V | 51 |
| Startup time tSU(LSE) | VDD is stabilized | typ 2 s | 51 |
| Frequency fHSI | VDDA = 3.3 V, TA = –40 to 85 °C | typ 8 MHz | 52 |
| HSI user trimming step TRIM | VDDA = 3.3 V, TA = –40 to 85 °C | max 1 % | 52 |
| Duty cycle DuCy(HSI) | VDDA = 3.3 V, TA = –40 to 85 °C | min 45 · max 55 % | 52 |
| Accuracy of the HSI oscillator (factory calibrated) ACCHSI | TA = –40 to 85 °C; VDDA = 3.3 V; with user calibration | typ 5 % | 52 |
| Accuracy of the HSI oscillator (factory calibrated) ACCHSI | TA = 25 °C; VDDA = 3.3 V; with user calibration | typ 1 % | 52 |
| HSI oscillator startup time tsu(HSI) | VDDA = 3.3 V, TA = –40 to 85 °C | min 1 · max 2 us | 52 |
| HSI oscillator power consumption IDDA(HSI) | VDDA = 3.3 V, TA = –40 to 85 °C | typ 80 uA | 52 |
| Frequency fHSI14 | VDDA = 3.3 V, TA = –40 to 85 °C | typ 14 MHz | 53 |
| HSI14 user-trimming step TRIM | VDDA = 3.3 V, TA = –40 to 85 °C | max 1 % | 53 |
| Duty cycle DuCy(HSI14) | VDDA = 3.3 V, TA = –40 to 85 °C | min 45 · max 55 % | 53 |
| Accuracy of the HSI14 oscillator (factory calibrated) ACCHSI14 | VDDA = 3.3 V, TA = –40 to 85 °C | typ 5 % | 53 |
| HSI14 oscillator startup time tsu(HSI14) | VDDA = 3.3 V, TA = –40 to 85 °C | min 1 · max 2 us | 53 |
| HSI14 oscillator power consumption IDDA(HSI14) | VDDA = 3.3 V, TA = –40 to 85 °C | typ 100 uA | 53 |
| Frequency fLSI | VDDA = 3.3 V, TA = –40 to 85 °C | min 30 · typ 40 · max 50 kHz | 53 |
| LSI oscillator startup time tsu(LSI) | VDDA = 3.3 V, TA = –40 to 85 °C | max 85 us | 53 |
| LSI oscillator power consumption IDDA(LSI) | VDDA = 3.3 V, TA = –40 to 85 °C | typ 0.75 uA | 53 |
| PLL input clock fPLL_IN | min 1 · max 24 MHz | 54 | |
| PLL input clock duty cycle fPLL_IN | min 40 · max 60 % | 54 | |
| PLL multiplier output clock fPLL_OUT | min 16 · max 48 MHz | 54 | |
| PLL lock time tLOCK | max 200 us | 54 | |
| Cycle-to-cycle jitter JitterPLL | max 300 ps | 54 | |
| 16-bit programming time tprog | TA = –40 to +85 °C | typ 53.5 us | 54 |
| Page (1 KB) erase time tERASE | TA = –40 to +85 °C | typ 30 ms | 54 |
| Mass erase time tME | TA = –40 to +85 °C | typ 30 ms | 54 |
| Supply current IDD | Write mode; TA = –40 to +85 °C | max 10 mA | 54 |
| Supply current IDD | Erase mode; TA = –40 to +85 °C | max 12 mA | 54 |
| Programming voltage Vprog | TA = –40 to +85 °C | min 2.4 · max 3.6 V | 54 |
| Endurance NEND | TA = –40 to +85 °C (6 suffix versions) | min 1 kcycles | 54 |
| Data retention tRET | 1 kcycle at TA = 85 °C | min 20 Years | 54 |
| Electrostatic discharge voltage (human body model) VESD(HBM) | TA = +25 °C, conforming to JESD22-A114; Class 2 | max 2000 V | 56 |
| Electrostatic discharge voltage (charge device model) VESD(CDM) | TA = +25 °C, conforming to JESD22-C101; Class II | max 500 V | 56 |
| Injected current on BOOT0 IINJ | Negative injection; positive injection NA | min 0 mA | 57 |
| Injected current on all FT and FTf pins with induced leakage current on adjacent pins less than –5 uA IINJ | Negative injection; positive injection NA | min -5 mA | 57 |
| Injected current on all TTa pins with induced leakage current on adjacent pins less than –5 uA IINJ | Negative and positive injection | min -5 · max 5 mA | 57 |
| Injected current on all TC and RESET pins with induced leakage current on adjacent pins less than –5 uA IINJ | Negative and positive injection | min -5 · max 5 mA | 57 |
| Output low level voltage for an I/O pin when 8 pins are sunk at the same time VOL | IIO = +8 mA; 2.7 V < VDD < 3.6 V | max 0.4 V | 60 |
| Output low level voltage for an I/O pin when 5 pins are sunk at the same time VOL | IIO = +20 mA; 2.7 V < VDD < 3.6 V | max 1.3 V | 60 |
| Output low level voltage for an I/O pin when 8 pins are sunk at the same time VOL | IIO = +6 mA; 2.4 V < VDD < 2.7 V | max 0.4 V | 60 |
| Output low level voltage for an FTf I/O pin in FM+ mode VOLFM+ | IIO = +20 mA | max 0.4 V | 60 |
| Maximum frequency fmax(IO)out | OSPEEDRy[1:0] = x0; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 2 MHz | 61 |
| Output high to low level fall time tf(IO)out | OSPEEDRy[1:0] = x0; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 125 ns | 61 |
| Output low to high level rise time tr(IO)out | OSPEEDRy[1:0] = x0; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 125 ns | 61 |
| Maximum frequency fmax(IO)out | OSPEEDRy[1:0] = 01; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 10 MHz | 61 |
| Output high to low level fall time tf(IO)out | OSPEEDRy[1:0] = 01; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 25 ns | 61 |
| Output low to high level rise time tr(IO)out | OSPEEDRy[1:0] = 01; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 25 ns | 61 |
| Maximum frequency fmax(IO)out | OSPEEDRy[1:0] = 11; CL = 30 pF, VDD = 2.7 V to 3.6 V | max 50 MHz | 61 |
| Maximum frequency fmax(IO)out | OSPEEDRy[1:0] = 11; CL = 50 pF, VDD = 2.7 V to 3.6 V | max 30 MHz | 61 |
| Maximum frequency fmax(IO)out | OSPEEDRy[1:0] = 11; CL = 50 pF, VDD = 2.4 V to 2.7 V | max 20 MHz | 61 |
| Output high to low level fall time tf(IO)out | OSPEEDRy[1:0] = 11; CL = 30 pF, VDD = 2.7 V to 3.6 V | max 5 ns | 61 |
| Output high to low level fall time tf(IO)out | OSPEEDRy[1:0] = 11; CL = 50 pF, VDD = 2.7 V to 3.6 V | max 8 ns | 61 |
| Output low to high level rise time tr(IO)out | OSPEEDRy[1:0] = 11; CL = 30 pF, VDD = 2.7 V to 3.6 V | max 5 ns | 61 |
| Output low to high level rise time tr(IO)out | OSPEEDRy[1:0] = 11; CL = 50 pF, VDD = 2.7 V to 3.6 V | max 8 ns | 61 |
| Maximum frequency fmax(IO)out | FM+ configuration; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 2 MHz | 61 |
| Output high to low level fall time tf(IO)out | FM+ configuration; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 12 ns | 61 |
| Output low to high level rise time tr(IO)out | FM+ configuration; CL = 50 pF, VDD = 2.4 V to 3.6 V | max 34 ns | 61 |
| Pulse width of external signals detected by the EXTI controller tEXTIpw | min 10 ns | 61 | |
| Analog supply voltage for ADC ON VDDA | min 2.4 · max 3.6 V | 64 | |
| ADC clock frequency fADC | min 0.6 · max 14 MHz | 64 | |
| Sampling rate fS | min 0.05 · max 1 MHz | 64 | |
| External trigger frequency fTRIG | fADC = 14 MHz | max 823 kHz | 64 |
| External trigger frequency fTRIG | max 17 1/fADC | 64 | |
| Conversion voltage range VAIN | Maximum VDDA | min 0 V | 64 |
| External input impedance RAIN | See Equation 1 and Table 49 for details | max 50 k | 64 |
| Sampling switch resistance RADC | max 1 k | 64 | |
| Internal sample and hold capacitor CADC | max 8 pF | 64 | |
| Calibration time tCAL | fADC = 14 MHz | typ 5.9 us | 64 |
| Calibration time tCAL | typ 83 1/fADC | 64 | |
| Trigger conversion latency tlatr | fADC = fPCLK/2 = 14 MHz | typ 0.196 us | 64 |
| Trigger conversion latency tlatr | fADC = fPCLK/2 | typ 5.5 1/fPCLK | 64 |
| Trigger conversion latency tlatr | fADC = fPCLK/4 = 12 MHz | typ 0.219 us | 64 |
| Trigger conversion latency tlatr | fADC = fPCLK/4 | typ 10.5 1/fPCLK | 64 |
| Trigger conversion latency tlatr | fADC = fHSI14 = 14 MHz | min 0.188 · max 0.259 us | 64 |
| ADC jitter on trigger conversion JitterADC | fADC = fHSI14 | typ 1 1/fHSI14 | 64 |
| Sampling time tS | fADC = 14 MHz | min 0.107 · max 17.1 us | 64 |
| Sampling time tS | min 1.5 · max 239.5 1/fADC | 64 | |
| Power-up time tSTAB | min 0 · typ 0 · max 1 us | 64 | |
| Total conversion time (including sampling time) tCONV | fADC = 14 MHz | min 1 · max 18 us | 64 |
| Total conversion time (including sampling time) tCONV | tS for sampling +12.5 for successive approximation | min 14 · max 252 1/fADC | 64 |
| RAIN max RAIN | Ts = 1.5 cycles; tS = 0.11 us | max 0.4 k | 65 |
| RAIN max RAIN | Ts = 7.5 cycles; tS = 0.54 us | max 5.9 k | 65 |
| RAIN max RAIN | Ts = 13.5 cycles; tS = 0.96 us | max 11.4 k | 65 |
| RAIN max RAIN | Ts = 28.5 cycles; tS = 2.04 us | max 25.2 k | 65 |
| RAIN max RAIN | Ts = 41.5 cycles; tS = 2.96 us | max 37.2 k | 65 |
| RAIN max RAIN | Ts = 55.5 cycles; tS = 3.96 us | max 50 k | 65 |
| Total unadjusted error ET | fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 k, VDDA = 2.7 V to 3.6 V, TA = −40 to 85 °C; after internal calibration | typ 3.3 · max 4 LSB | 65 |
| Offset error EO | fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 k, VDDA = 2.7 V to 3.6 V, TA = −40 to 85 °C; after internal calibration | typ 1.9 · max 2.8 LSB | 65 |
| Gain error EG | fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 k, VDDA = 2.7 V to 3.6 V, TA = −40 to 85 °C; after internal calibration | typ 2.8 · max 3 LSB | 65 |
| Differential linearity error ED | fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 k, VDDA = 2.7 V to 3.6 V, TA = −40 to 85 °C; after internal calibration | typ 0.7 · max 1.3 LSB | 65 |
| Integral linearity error EL | fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 k, VDDA = 2.7 V to 3.6 V, TA = −40 to 85 °C; after internal calibration | typ 1.2 · max 1.7 LSB | 65 |
| Thermal resistance junction-ambient JA | TSSOP20 | typ 110 °C/W | 83 |
Pins, by the datasheet
16- 4 NRST
- Device reset input and internal reset output, active low. · p. 26
- 5 VDDA
- Analog power supply. · p. 26
- 6 PA0
- GPIO with ADC_IN0, RTC_TAMP2 and WKUP1 functions. · p. 26
- 7 PA1
- GPIO with ADC_IN1 and EVENTOUT functions. · p. 26
- 8 PA2
- GPIO with ADC_IN2 function. · p. 26
- 9 PA3
- GPIO with ADC_IN3 function. · p. 26
- 10 PA4
- GPIO with SPI1_NSS, TIM14_CH1 and ADC_IN4 functions. · p. 27
- 11 PA5
- GPIO with SPI1_SCK and ADC_IN5 functions. · p. 27
- 12 PA6
- GPIO with SPI1_MISO, TIM3_CH1, TIM1_BKIN, TIM16_CH1, EVENTOUT and ADC_IN6 functions. · p. 27
- 13 PA7
- GPIO with SPI1_MOSI, TIM3_CH2, TIM14_CH1, TIM1_CH1N, TIM17_CH1, EVENTOUT and ADC_IN7 functions. · p. 27
- 14 PB1
- GPIO with TIM3_CH4, TIM14_CH1, TIM1_CH3N and ADC_IN9 functions. · p. 27
- 16 VDD
- Digital power supply. · p. 27
- 17 PA9
- GPIO with USART1_TX and TIM1_CH2 functions. · p. 28
- 18 PA10
- GPIO with USART1_RX, TIM1_CH3 and TIM17_BKIN functions. · p. 28
- 1 BOOT0
- Boot memory selection. · p. 29
- 15 VSS
- Ground. · p. 30
- 4 layers406 × 27.5 mm

- 2 layers50 × 50 mm

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Stm32f0..f breakout
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Questions
Is there a KiCad symbol and footprint for the STM32F030F4P6?
Yes. The symbol is MCU_ST_STM32F0:STM32F030F4Px and the footprint Package_SO:TSSOP-20_4.4x6.5mm_P0.65mm, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the STM32F030F4P6?
TSSOP-20, with 20 pins. Its footprint is drawn on this page.
Where is the STM32F030F4P6 datasheet?
STMicroelectronics publishes it: the Datasheet link on this page opens it.
Where can I order the STM32F030F4P6?
JLCPCB lists it as part C89040, with 59,987 in stock; the sellers' links on this page open their listings.
What can replace the STM32F030F4P6?
Parts like it in the library: the CH32V003F4P6 by WCH (Nanjing Qinheng Microelectronics), the STM32G030F6P6 by STMicroelectronics, the STM32F042F4P6 by STMicroelectronics and the STM32F042F6P6 by STMicroelectronics. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the STM32F030F4P6?
41 boards in 30 repositories on GitHub; the most starred are listed on this page, with their KiCad files.