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SX1262IMLTRT

SEMTECHExtended

-148dBm -40℃~+85℃ 1.8V~3.7V 150MHz~960MHz 22dBm 300Kbps 32mA 4.2mA ISM SPI Supports software reset、Power-on reset function、Supports RSSI function transceiver QFN-24-EP(4x4) RF Transceiver ICs ROHS

Part id
semtech/SX1262IMLTRT
Category
RF Transceiver ICs
Package
QFN-24-EP(4x4)
Pins
25
In stock
39,193 at JLCPCB (C191341)
Used on
73 open-source boards

Overview

The SX1262IMLTRT is a RF Transceiver IC made by SEMTECH in a QFN-24-EP(4x4) package with 25 pins. -148dBm -40℃~+85℃ 1.8V~3.7V 150MHz~960MHz 22dBm 300Kbps 32mA 4.2mA ISM SPI Supports software reset、Power-on reset function、Supports RSSI function transceiver QFN-24-EP(4x4) RF Transceiver ICs ROHS.

PCBKit's library has its KiCad symbol (RF:SX1262IMLTRT, from KiCad's library) and its footprint (Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm, from KiCad's library), ready for a KiCad board. 39,193 are in stock at JLCPCB (part C191341). 73 open-source boards in 59 repositories on GitHub use it.

Symbol

VDD_IN1GND2XTA3XTB4DIO36VREG7DCC_SW9VBAT10VBAT_IO11DIO212DIO113BUSY14RESET15MISO16MOSI17SCK18NSS19RFI_P21RFI_N22RFO23VR_PA24
RF:SX1262IMLTRTFrom KiCad's library

Footprint

25
Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mmFrom KiCad's library

From the datasheet

11
Supply, least
1.8 V · VBAT, recommended operating min · p. 14
Supply, most
3.7 V · VBAT, recommended operating max · p. 14
Supply, absolute maximum
3.9 V · VBAT, absolute max · p. 14
Works from
-40 °C · Temperature under bias min · p. 14
Works up to
85 °C · Temperature under bias max · p. 14
Takes working
4.2 mA · VBAT tied to VBAT_IO, receive FSK 4.8 kb/s, DC-DC, typical · p. 16
Takes at most
118 mA · SX1262 transmit +22 dBm, 868/915 MHz, typical · p. 17
Takes asleep
160 nA · SLEEP with cold start, all blocks off, typical · p. 16
Takes asleep
600 nA · SLEEP with warm start, configuration retained, typical · p. 16
Takes asleep
1.2 µA · SLEEP with warm start, configuration retained and RC64k, typical · p. 16
Data rate, most
300 kbit/s · FSK bit rate max, minimum modulation index 0.5 · p. 18

What it is and has

3
Modulation
LoRa and (G)FSK · p. 1
Frequency coverage
150 MHz to 960 MHz · p. 1
Package
QFN 24, Pb-free, Halogen free, RoHS/WEEE compliant · p. 2

Around it

1
ind 15 μH
between pin 7 and pin 9; For DC-DC operation; preferred shielded inductor with low series resistance and resonance well above switching frequency. Selection guidance: DCR maximum 2 ohms, Idc minimum 100 mA, frequency minimum 20 MHz. · p. 32

Specifications

106
ParameterConditionsAs printedPage
Class 2 of ANSI/ESDA/JEDEC Standard JS-001-2014 (Human Body Model) ESD_HBMmax 2 kV14
ESD Charged Device Model, JEDEC standard JESD22-C101D, class III ESD_CDMmax 1000 V14
Latch-up, JEDEC standard JESD78 B, class I level A LUmax 100 mA14
Supply voltage, applies to VBAT and VBAT_IO VDDmrmin -0.5 · max 3.9 V14
Temperature Tmrmin -55 · max 125 °C14
RF Input level Pmrmax 10 dBm14
Supply voltage, applies to VBAT and VBAT_IO VDDopmin 1.8 · max 3.7 V14
Temperature under bias Topmin -40 · max 85 °C14
Load capacitance on digital ports Clopmax 20 pF14
RF Input power MLmax 0 dBm14
Crystal oscillator frequency FXOSCtyp 32 MHz15
Crystal load capacitance CLOADtyp 10 pF15
Crystal shunt capacitance C0XTALmin 0.3 · typ 0.6 · max 2 pF15
Crystal series resistance RSXTALtyp 30 · max 60 15
Crystal motional capacitance CMXTALmin 1.3 · typ 1.89 · max 2.5 fF15
Drive level DRIVEmax 100 W15
OFF mode (SLEEP mode with cold start) IDDOFFAll blocks off; VBAT_IO = VBAT = 3.3 Vtyp 160 nA16
SLEEP mode (SLEEP mode with warm start) IDDSLConfiguration retained; VBAT_IO = VBAT = 3.3 Vtyp 600 nA16
SLEEP mode (SLEEP mode with warm start) IDDSLConfiguration retained + RC64k; VBAT_IO = VBAT = 3.3 Vtyp 1.2 A16
STDBY_RC mode IDDSBRRC13M, XOSC OFF; VBAT_IO = VBAT = 3.3 Vtyp 0.6 mA16
STDBY_XOSC mode IDDSBXXOSC ON; VBAT_IO = VBAT = 3.3 Vtyp 0.8 mA16
Synthesizer mode IDDFSDC-DC mode used; VBAT_IO = VBAT = 3.3 Vtyp 2.1 mA16
Synthesizer mode IDDFSLDO mode used; VBAT_IO = VBAT = 3.3 Vtyp 3.55 mA16
Receive mode DC-DC mode used IDDRXFSK 4.8 kb/s; VBAT_IO = VBAT = 3.3 Vtyp 4.2 mA16
Receive mode DC-DC mode used IDDRXLoRa® 125 kHz; VBAT_IO = VBAT = 3.3 Vtyp 4.6 mA16
Receive mode DC-DC mode used IDDRXRx Boosted, FSK 4.8 kb/s; VBAT_IO = VBAT = 3.3 Vtyp 4.8 mA16
Receive mode DC-DC mode used IDDRXRx Boosted, LoRa® 125 kHz; VBAT_IO = VBAT = 3.3 Vtyp 5.3 mA16
Receive mode DC-DC mode used IDDRXLoRa® 125 kHz, VBAT = 1.8 Vtyp 8.2 mA16
Receive mode LDO mode used IDDRXFSK 4.8 kb/s; VBAT_IO = VBAT = 3.3 Vtyp 8 mA16
Receive mode LDO mode used IDDRXLoRa® 125 kHz; VBAT_IO = VBAT = 3.3 Vtyp 8.8 mA16
Receive mode LDO mode used IDDRXRx Boosted, FSK 4.8 kb/s; VBAT_IO = VBAT = 3.3 Vtyp 9.3 mA16
Receive mode LDO mode used IDDRXRx Boosted, LoRa® 125 kHz; VBAT_IO = VBAT = 3.3 Vtyp 10.1 mA16
Transmit current IDDTXSX1262; 868/915 MHz; PA match +22 dBm; power output +22 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 118 mA17
Transmit current IDDTXSX1262; 868/915 MHz; PA match +22 dBm; power output +20 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 102 mA17
Transmit current IDDTXSX1262; 868/915 MHz; PA match +22 dBm; power output +17 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 95 mA17
Transmit current IDDTXSX1262; 868/915 MHz; PA match +22 dBm; power output +14 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 90 mA17
Transmit current IDDTXSX1262; 868/915 MHz; +20 dBm / optimal settings; power output +20 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 84 mA17
Transmit current IDDTXSX1262; 868/915 MHz; +17 dBm / optimal settings; power output +17 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 58 mA17
Transmit current IDDTXSX1262; 868/915 MHz; +14 dBm / optimal settings; power output +14 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 45 mA17
Transmit current IDDTXSX1262; 434/490 MHz; PA match +22 dBm; power output +22 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 107 mA17
Transmit current IDDTXSX1262; 434/490 MHz; PA match +22 dBm; power output +20 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 90 mA17
Transmit current IDDTXSX1262; 434/490 MHz; PA match +22 dBm; power output +17 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 75 mA17
Transmit current IDDTXSX1262; 434/490 MHz; PA match +22 dBm; power output +14 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 63 mA17
Transmit current IDDTXSX1262; 434/490 MHz; +20 dBm / optimal settings; power output +20 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 65 mA17
Transmit current IDDTXSX1262; 434/490 MHz; +17 dBm / optimal settings; power output +17 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 42 mA17
Transmit current IDDTXSX1262; 434/490 MHz; +14 dBm / optimal settings; power output +14 dBm; VBAT = 3.3 V; DC-DC core, PA supplied from VBATtyp 32 mA17
Synthesizer frequency step FSTEP-typ 0.95 Hz18
Synthesizer phase noise (for 868 / 915 MHz) PHN1 kHz offsettyp -75 dBc/Hz18
Synthesizer phase noise (for 868 / 915 MHz) PHN10 kHz offsettyp -95 dBc/Hz18
Synthesizer phase noise (for 868 / 915 MHz) PHN100 kHz offsettyp -100 dBc/Hz18
Synthesizer phase noise (for 868 / 915 MHz) PHN1MHz offsettyp -120 dBc/Hz18
Synthesizer phase noise (for 868 / 915 MHz) PHN10 MHz offsettyp -135 dBc/Hz18
Synthesizer wake-up time TS_FSFrom STDBY_XOSC modetyp 40 s18
Synthesizer hop time TS_HOP10 MHz steptyp 30 s18
Crystal oscillator wake-up time TS_OSCfrom STDBY_RCtyp 150 s18
Bit rate, FSK BR_FProgrammable; Minimum modulation index is 0.5min 0.6 · max 300 kb/s18
Frequency deviation, FSK FDAProgrammable; FDA + BR_F / 2  250 kHzmin 0.6 · max 200 kHz18
Bit rate LoRa® BR_LMin. for SF12, BW_L = 7.8 kHz; Max. for SF5, BW_L = 500 kHzmin 0.018 · max 62.5 kb/s18
Signal BW, LoRa® BW_LProgrammablemin 7.8 · max 500 kHz18
Spreading factor for LoRa® SFProgrammable, chips/symbol = 2^SFmin 5 · max 12 -18
Regulated voltage range for TCXO voltage supply VTCXOMin/Max values in typical conditions, Typ value for default setting; VDDop > VTCXO + 200 mVmin 1.6 · typ 1.7 · max 3.3 V18
Load current for TCXO regulator ILTCXOtyp 1.5 · max 4 mA18
Start-up time for TCXO regulator TSVTCXOFrom enable to regulated voltage within 25 mV from targetmax 100 s18
Current consumption of the TCXO regulator IDDTCXOQuiescent currentmax 70 A18
Current consumption of the TCXO regulator IDDTCXORelative to load currenttyp 1 · max 2 %18
Amplitude voltage for external TCXO applied toXTA pin ATCXOprovided through a 220  resistor in series with a 10 pF capacitancemin 0.4 · typ 0.6 · max 1.2 Vpk-pk18
Sensitivity 2-FSK RXS_2FBRX Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BR_F = 0.6 kb/s, FDA = 0.8 kHz, BW_F = 4 kHztyp -125 dBm19
Sensitivity 2-FSK RXS_2FBRX Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BR_F = 1.2 kb/s, FDA = 5 kHz, BW_F = 20 kHztyp -123 dBm19
Sensitivity 2-FSK RXS_2FBRX Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BR_F = 4.8 kb/s, FDA = 5 kHz, BW_F = 20 kHztyp -118 dBm19
Sensitivity 2-FSK RXS_2FBRX Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BR_F = 38.4 kb/s, FDA = 40 kHz, BW_F = 160 kHztyp -109 dBm19
Sensitivity 2-FSK RXS_2FBRX Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BR_F = 250 kb/s, FDA = 125 kHz, BW_F = 500 kHztyp -104 dBm19
Sensitivity LoRa® RXS_LBRx Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BW_L = 10.4 kHz, SF = 7typ -134 dBm19
Sensitivity LoRa® RXS_LBRx Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BW_L = 10.4 kHz, SF = 12typ -148 dBm19
Sensitivity LoRa® RXS_LBRx Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BW_L = 125 kHz, SF = 7typ -124 dBm19
Sensitivity LoRa® RXS_LBRx Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BW_L = 125 kHz, SF = 12typ -137 dBm19
Sensitivity LoRa® RXS_LBRx Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BW_L = 250 kHz, SF = 7typ -121 dBm19
Sensitivity LoRa® RXS_LBRx Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BW_L = 500 kHz, SF = 7typ -117 dBm19
Sensitivity LoRa® RXS_LBRx Boosted gain, split RF paths for Rx and Tx, RF switch insertion loss excluded; BW_L = 500 kHz, SF = 12typ -129 dBm19
Sensitivity 2-FSK RXS_2FRx Power Saving gain with direct tie connection between Rx and Tx; BR_F = 4.8 kb/s, FDA = 5 kHz, BW_F = 20 kHztyp -115 dBm19
Sensitivity LoRa® RXS_LRx Power Saving gain with direct tie connection between Rx and Tx; BW_L = 125 kHz, SF = 12typ -133 dBm19
Co-channel rejection, FSK CCR_Ftyp -9 dB19
Co-channel rejection, LoRa® CCR_LSF = 7typ 5 dB19
Co-channel rejection, LoRa® CCR_LSF = 12typ 19 dB19
Adjacent channel rejection, FSK ACR_FOffset = +/- 50 kHztyp 45 dB19
Adjacent channel rejection, LoRa® ACR_LOffset = +/- 1.5 x BW_L; BW_L = 125 kHz, SF = 7typ 60 dB19
Adjacent channel rejection, LoRa® ACR_LOffset = +/- 1.5 x BW_L; BW_L = 125 kHz, SF = 12typ 72 dB19
Maximum RF output power TXOPSX1262; Highest power step settingtyp 22 dBm21
RF output power drop versus supply voltage TXDRPSX1262, +22 dBm, VBAT = 2.7 Vtyp 2 dB21
RF output power drop versus supply voltage TXDRPSX1262, +22 dBm, VBAT = 2.4 Vtyp 3 dB21
RF output power drop versus supply voltage TXDRPSX1262, +22 dBm, VBAT = 1.8 Vtyp 6 dB21
Power amplifier ramping time TXRMPProgrammablemin 10 · max 3400 s21
Input Low Voltage VILMaximum = 0.3*VBAT_IO; NRESET and DIO3 are referred to VBAT.min -0.3 V21
Input Low Voltage for pin NRESET VIL_NMaximum = 0.2*VBATmin -0.3 V21
Output Low Voltage VOLImax = 2.5 mA; maximum = 0.1*VBAT_IO. NRESET and DIO3 are referred to VBAT.min 0 V21
Digital input leakage current IleakNSS, MOSI, SCKmin -1 · max 1 A21
NSS falling edge to SCK setup time t1Maximum load capacitance 10 pFmin 32 ns50
SCK period t2Maximum load capacitance 10 pFmin 62.5 ns50
SCK high time t3Maximum load capacitance 10 pFmin 31.25 ns50
MOSI to SCK hold time t4Maximum load capacitance 10 pFmin 5 ns50
MOSI to SCK setup time t5Maximum load capacitance 10 pFmin 5 ns50
NSS falling to MISO delay t6Maximum load capacitance 10 pFmin 0 · max 15 ns50
SCK falling to MISO delay, t7Maximum load capacitance 10 pFmin 0 · max 15 ns50
SCK to NSS rising edge hold time t8Maximum load capacitance 10 pFmin 31.25 ns50
NSS high time t9Maximum load capacitance 10 pFmin 125 ns50
NSS falling edge to SCK setup time when switching from SLEEP to STDBY_RC mode t10Maximum load capacitance 10 pFmin 100 s50
NSS falling to MISO delay when switching from SLEEP to STDBY_RC mode t11Maximum load capacitance 10 pFmin 0 · max 150 s50

Ordering codes, by the datasheet

2
SX1262IMLTRT
QFN 24 · SX1262; Tape & Reel; minimum order quantity 3’000 pieces · p. 2
SX1261IMLTRT
QFN 24 · SX1261; Tape & Reel; minimum order quantity 3’000 pieces · p. 2

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Parts like it

1

Questions

Is there a KiCad symbol and footprint for the SX1262IMLTRT?

Yes. The symbol is RF:SX1262IMLTRT and the footprint Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.6x2.6mm, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the SX1262IMLTRT?

QFN-24-EP(4x4), with 25 pins. Its footprint is drawn on this page.

Where is the SX1262IMLTRT datasheet?

SEMTECH publishes it: the Datasheet link on this page opens it.

Where can I order the SX1262IMLTRT?

JLCPCB lists it as part C191341, with 39,193 in stock; the sellers' links on this page open their listings.

What can replace the SX1262IMLTRT?

Parts like it in the library: the SX1261IMLTRT by SEMTECH. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the SX1262IMLTRT?

73 boards in 59 repositories on GitHub; the most starred are listed on this page, with their KiCad files.