MMBTH10L

onsemiExtended

-55℃~+150℃ 1 NPN 100nA 225mW 25V 3V 500mV 60 650MHz NPN SOT-23 Bipolar (BJT) ROHS

Part id: onsemi/MMBTH10L
Category: Bipolar (BJT)
Package: SOT-23
Pins: 3
In stock: 730 at JLCPCB (C16204)
Used on: 1 open-source board

Overview

The MMBTH10L is a bipolar made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 NPN 100nA 225mW 25V 3V 500mV 60 650MHz NPN SOT-23 Bipolar (BJT) ROHS.

PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_NPN_1B_2E_3C, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 730 are in stock at JLCPCB (part C16204). 1 open-source board in 1 repository on GitHub use it.

Symbol

Pinmap_Generic:Q_NPN_1B_2E_3CFrom PCBKit's generic symbols

Footprint

Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

Collector-emitter, most: 25 V · Collector-emitter voltage, absolute max · p. 1
Current gain, least: 60 · DC current gain, min at IC = 4.0 mAdc, VCE = 10 Vdc · p. 2
Junction, hottest: 150 °C · Junction temperature, absolute max · p. 1
Junction to air (SOT−23): 556 K/W · Junction to ambient, max on FR−5 board (Note 1) · p. 1
Junction to air (SOT−23): 417 K/W · Junction to ambient, max on alumina substrate (Note 2) · p. 1

What it is and has

Application: VHF/UHF Transistor · p. 1
Transistor type: NPN Silicon · p. 1

Specifications

Parameter	Conditions	As printed	Page
Collector-Emitter Voltage VCEO		max 25 Vdc	1
Collector-Base Voltage VCBO		max 30 Vdc	1
Emitter-Base Voltage VEBO		max 3 Vdc	1
Total Device Dissipation PD	FR−5 Board (Note 1), TA = 25°C	max 225 mW	1
Derate above 25°C PD	FR−5 Board (Note 1)	max 1.8 mW/°C	1
Thermal Resistance, Junction to Ambient (Note 1) RθJA	FR−5 Board	max 556 °C/W	1
Total Device Dissipation PD	Alumina Substrate (Note 2), TA = 25°C	max 300 mW	1
Derate above 25°C PD	Alumina Substrate (Note 2)	max 2.4 mW/°C	1
Thermal Resistance, Junction to Ambient (Note 2) RθJA	Alumina Substrate	max 417 °C/W	1
Junction and Storage Temperature Range TJ, Tstg	Upper limit	max 150 °C	1
Junction and Storage Temperature Range TJ, Tstg	Lower limit	min -55 °C	1
Collector−Emitter Breakdown Voltage V(BR)CEO	TA = 25°C, IC = 1.0 mAdc, IB = 0	min 25 Vdc	2
Collector−Base Breakdown Voltage V(BR)CBO	TA = 25°C, IC = 100 uAdc, IE = 0	min 30 Vdc	2
Emitter−Base Breakdown Voltage V(BR)EBO	TA = 25°C, IE = 10 uAdc, IC = 0	min 3 Vdc	2
Collector Cutoff Current ICBO	TA = 25°C, VCB = 25 Vdc, IE = 0	max 100 nAdc	2
Emitter Cutoff Current IEBO	TA = 25°C, VEB = 2.0 Vdc, IC = 0	max 100 nAdc	2
DC Current Gain hFE	MMBTH10LT1G; TA = 25°C, IC = 4.0 mAdc, VCE = 10 Vdc	min 60 −	2
Collector−Emitter Saturation Voltage VCE(sat)	TA = 25°C, IC = 4.0 mAdc, IB = 0.4 mAdc	max 0.5 Vdc	2
Base−Emitter On Voltage VBE	TA = 25°C, IC = 4.0 mAdc, VCE = 10 Vdc	max 0.95 Vdc	2
Current−Gain − Bandwidth Product fT	MMBTH10LT1G; TA = 25°C, IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 Mhz	min 650 MHz	2
Collector−Base Capacitance Ccb	TA = 25°C, VCB = 10 Vdc, IE = 0, f = 1.0 MHz	max 0.7 pF	2
Common−Base Feedback Capacitance Crb	TA = 25°C, VCB = 10 Vdc, IE = 0, f = 1.0 MHz	max 0.65 pF	2
Collector Base Time Constant rb′Cc	TA = 25°C, IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz	max 9 ps	2

Pins, by the datasheet

1 BASE: Base. · p. 5
2 EMITTER: Emitter. · p. 5
3 COLLECTOR: Collector. · p. 5

Ordering codes, by the datasheet

MMBTH10LT1G: SOT−23 (Pb−Free) · 3,000 / Tape & Reel · p. 1
NSVMMBTH10LT1G: SOT−23 (Pb−Free) · NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable; 3,000 / Tape & Reel · p. 1
MMBTH10−4LT1G: SOT−23 (Pb−Free) · DC current gain 120 to 240; minimum current-gain bandwidth product 800 MHz; 3,000 / Tape & Reel · p. 1
MMBTH10LT3G: SOT−23 (Pb−Free) · 10,000 / Tape & Reel · p. 1
SMMBTH10−4LT3G: SOT−23 (Pb−Free) · S prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable; 10,000 / Tape & Reel · p. 1

Parameters

Collector - Emitter Voltage VCEO: 25V
Current - Collector Cutoff: 100nA
DC Current Gain: 60
Emitter-Base Voltage(Vebo): 3V
Junction Temperature(Max): 150℃
Number: 1 NPN
Operating Temperature: -55℃~+150℃
Pd - Power Dissipation: 225mW
Thermal Resistance(Junction to Ambient): 556℃/W
Transition frequency(fT): 650MHz
Vce Saturation(VCE(sat)): 500mV
type: NPN

Order codes

MMBTH10LT1GLCSC C16204
MMBTH10LT3GLCSC C896780

Pinout

The pins of the MMBTH10L
Pin	Name	Type
1	B	Input
2	E	Passive
3	C	Passive

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Open-source boards using it

4 layers98.7 × 44.7 mm
NanoLogger
TobiasNetzer/nanoLogger
Here is a simplified block diagram of the data logger. To measure the current of a device, the data logger is simply connected in series between the voltage source and the DUT/load.
221 parts

Parts like it

Questions

Is there a KiCad symbol and footprint for the MMBTH10L?

Yes. The symbol is Pinmap_Generic:Q_NPN_1B_2E_3C and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the MMBTH10L?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the MMBTH10L datasheet?

onsemi publishes it: the Datasheet link on this page opens it.

Where can I order the MMBTH10L?

JLCPCB lists it as part C16204, with 730 in stock; the sellers' links on this page open their listings.

What can replace the MMBTH10L?

Parts like it in the library: the S8050 by hongjiacheng, the SS8050 by hongjiacheng, the MMBT5551 by hongjiacheng and the MMBT5401 by hongjiacheng. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the MMBTH10L?

1 board in 1 repository on GitHub; the most starred are listed on this page, with their KiCad files.