MMBT3904L

onsemiExtended

-55℃~+150℃ 1 NPN 200mA 200mV 225mW 300MHz 40 40V 50nA 6V NPN SOT-23 Bipolar (BJT) ROHS

Part id: onsemi/MMBT3904L
Category: Bipolar (BJT)
Package: SOT-23
Pins: 3
In stock: 1,492,963 at JLCPCB (C81464)
Used on: 5 open-source boards

Overview

The MMBT3904L is a bipolar made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 NPN 200mA 200mV 225mW 300MHz 40 40V 50nA 6V NPN SOT-23 Bipolar (BJT) ROHS.

PCBKit's library has its KiCad symbol (Transistor_BJT:MMBT3904, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 1,492,963 are in stock at JLCPCB (part C81464). 5 open-source boards in 4 repositories on GitHub use it.

Symbol

Transistor_BJT:MMBT3904From KiCad's library

Footprint

Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

Collector-emitter, most: 40 V · Collector-emitter voltage, max · p. 1
Collector current, most: 200 mA · Continuous collector current, max · p. 1
Junction, hottest: 150 °C · Junction temperature, max · p. 1
Junction to air (SOT−23 (TO−236)): 556 K/W · Junction-to-ambient, FR− 5 board, max · p. 1
Junction to air (SOT−23 (TO−236)): 417 K/W · Junction-to-ambient, alumina substrate, max · p. 1
Current gain, least: 40 · DC gain at IC = 0.1 mAdc, VCE = 1.0 Vdc, min · p. 2
Current gain, least: 70 · DC gain at IC = 1.0 mAdc, VCE = 1.0 Vdc, min · p. 2
Current gain, least: 100 · DC gain at IC = 10 mAdc, VCE = 1.0 Vdc, min · p. 2
Current gain, least: 60 · DC gain at IC = 50 mAdc, VCE = 1.0 Vdc, min · p. 2
Current gain, least: 30 · DC gain at IC = 100 mAdc, VCE = 1.0 Vdc, min · p. 2

What it is and has

Function: General Purpose Transistor · p. 1
Transistor type: NPN Silicon · p. 1

Specifications

Parameter	Conditions	As printed	Page
Collector −Emitter Voltage VCEO		max 40 Vdc	1
Collector −Base Voltage VCBO		max 60 Vdc	1
Emitter −Base Voltage VEBO		max 6 Vdc	1
Collector Current − Continuous IC		max 200 mAdc	1
Collector Current − Peak (Note 3) ICM	Reference SOA curve	max 900 mAdc	1
Total Device Dissipation FR− 5 Board PD	Note 1; TA = 25°C	max 225 mW	1
Derate above 25°C PD	FR− 5 Board, Note 1	max 1.8 mW/°C	1
Thermal Resistance, Junction−to−Ambient RqJA	FR− 5 Board, Note 1; SOT−23 (TO−236)	max 556 °C/W	1
Total Device Dissipation Alumina Substrate, (Note 2) PD	TA = 25°C	max 300 mW	1
Derate above 25°C PD	Alumina Substrate, Note 2	max 2.4 mW/°C	1
Thermal Resistance, Junction−to−Ambient RqJA	Alumina Substrate, Note 2; SOT−23 (TO−236)	max 417 °C/W	1
Junction and Storage Temperature TJ, Tstg		min -55 · max 150 °C	1
Collector −Emitter Breakdown Voltage V(BR)CEO	TA = 25°C; IC = 1.0 mAdc, IB = 0	min 40 Vdc	2
Collector −Base Breakdown Voltage V(BR)CBO	TA = 25°C; IC = 10 mAdc, IE = 0	min 60 Vdc	2
Emitter −Base Breakdown Voltage V(BR)EBO	TA = 25°C; IE = 10 mAdc, IC = 0	min 6 Vdc	2
Base Cutoff Current IBL	TA = 25°C; VCE = 30 Vdc, VEB = 3.0 Vdc	max 50 nAdc	2
Collector Cutoff Current ICEX	TA = 25°C; VCE = 30 Vdc, VEB = 3.0 Vdc	max 50 nAdc	2
DC Current Gain HFE	TA = 25°C; IC = 0.1 mAdc, VCE = 1.0 Vdc; Note 4	min 40 −	2
DC Current Gain HFE	TA = 25°C; IC = 1.0 mAdc, VCE = 1.0 Vdc; Note 4	min 70 −	2
DC Current Gain HFE	TA = 25°C; IC = 10 mAdc, VCE = 1.0 Vdc; Note 4	min 100 · max 300 −	2
DC Current Gain HFE	TA = 25°C; IC = 50 mAdc, VCE = 1.0 Vdc; Note 4	min 60 −	2
DC Current Gain HFE	TA = 25°C; IC = 100 mAdc, VCE = 1.0 Vdc; Note 4	min 30 −	2
Collector −Emitter Saturation Voltage VCE(sat)	TA = 25°C; IC = 10 mAdc, IB = 1.0 mAdc; Note 4	max 0.2 Vdc	2
Collector −Emitter Saturation Voltage VCE(sat)	TA = 25°C; IC = 50 mAdc, IB = 5.0 mAdc; Note 4	max 0.3 Vdc	2
Base −Emitter Saturation Voltage VBE(sat)	TA = 25°C; IC = 10 mAdc, IB = 1.0 mAdc; Note 4	min 0.65 · max 0.85 Vdc	2
Base −Emitter Saturation Voltage VBE(sat)	TA = 25°C; IC = 50 mAdc, IB = 5.0 mAdc; Note 4	max 0.95 Vdc	2
Current −Gain − Bandwidth Product fT	TA = 25°C; IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz	min 300 MHz	2
Output Capacitance Cobo	TA = 25°C; VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz	max 4 pF	2
Input Capacitance Cibo	TA = 25°C; VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz	max 8 pF	2
Input Impedance hie	TA = 25°C; VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz	min 1 · max 10 kW	2
Voltage Feedback Ratio hre	TA = 25°C; VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz	min 0.5 · max 8 X 10− 4	2
Small −Signal Current Gain hfe	TA = 25°C; VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz	min 100 · max 400 −	2
Output Admittance hoe	TA = 25°C; VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz	min 1 · max 40 mmhos	2
Noise Figure NF	TA = 25°C; VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz	max 5 dB	2
Delay Time td	TA = 25°C; VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc	max 35 ns	2
Rise Time tr	TA = 25°C; VCC = 3.0 Vdc, VBE = − 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc	max 35 ns	2
Storage Time ts	TA = 25°C; VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc	max 200 ns	2
Fall Time tf	TA = 25°C; VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc	max 50 ns	2

Pins, by the datasheet

1 BASE: Base. · p. 7
2 EMITTER: Emitter. · p. 7
3 COLLECTOR: Collector. · p. 7

Ordering codes, by the datasheet

MMBT3904LT1G: SOT−23 · Pb−Free; 3000 / Tape & Reel · p. 1
SMMBT3904LT1G: SOT−23 · Pb−Free; 3000 / Tape & Reel; S prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable · p. 1
MMBT3904LT3G: SOT−23 · Pb−Free; 10,000 / Tape & Reel · p. 1
SMMBT3904LT3G: SOT−23 · Pb−Free; 10,000 / Tape & Reel; S prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable · p. 1

Parameters

Collector - Emitter Voltage VCEO: 40V
Configuration: Standalone
Current - Collector Cutoff: 50nA
Current - Collector(Ic): 200mA
DC Current Gain: 40
DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
Emitter-Base Voltage(Vebo): 6V
Junction Temperature(Max): 150℃
Number: 1 NPN
Operating Temperature: -55℃~+150℃
Pd - Power Dissipation: 300mW
Thermal Resistance(Junction to Ambient): 556℃/W
Transition frequency(fT): 300MHz
Vce Saturation(VCE(sat)): 200mV
type: NPN

Order codes

MMBT3904LT3GLCSC C150052
MMBT3904LT1GLCSC C81464

Pinout

The pins of the MMBT3904L
Pin	Name	Type
1	B	Input
2	E	Passive
3	C	Passive

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Parts like it

Questions

Is there a KiCad symbol and footprint for the MMBT3904L?

Yes. The symbol is Transistor_BJT:MMBT3904 and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the MMBT3904L?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the MMBT3904L datasheet?

onsemi publishes it: the Datasheet link on this page opens it.

Where can I order the MMBT3904L?

JLCPCB lists it as part C81464, with 1,492,963 in stock; the sellers' links on this page open their listings.

What can replace the MMBT3904L?

Parts like it in the library: the S8050 by hongjiacheng, the SS8050 by hongjiacheng, the MMBT5551 by hongjiacheng and the MMBT5401 by hongjiacheng. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the MMBT3904L?

5 boards in 4 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

MMBT3904L

Overview

Symbol

Footprint

From the datasheet

What it is and has

Specifications

Pins, by the datasheet

Ordering codes, by the datasheet

Open-source boards using it

Plug controller

LineSlat

MiniSlat

Led module

Led module

Parts like it

S8050

SS8050

MMBT5551

MMBT5401