2 layers84 × 25 mm
Overview
The MMBT2222AL is a bipolar made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 NPN 10nA 225mW 300MHz 300mV 35 40V 600mA 6V NPN SOT-23 Bipolar (BJT) ROHS.
PCBKit's library has its KiCad symbol (Transistor_BJT:MMBT2222A, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 1,331,170 are in stock at JLCPCB (part C82460). 1 open-source board in 1 repository on GitHub use it.
Symbol
Footprint
From the datasheet
10- Collector-emitter, most
- 40 V · Collector−Emitter voltage, absolute max · p. 1
- Collector current, most
- 600 mA · Continuous collector current, max · p. 1
- Junction, hottest
- 150 °C · Junction temperature, max · p. 1
- Junction to air (SOT−23)
- 556 K/W · Junction to ambient, FR−5 board, max · p. 1
- Junction to air (SOT−23)
- 417 K/W · Junction to ambient, alumina substrate, max · p. 1
- Current gain, least
- 35 · DC current gain, IC = 0.1 mAdc, VCE = 10 Vdc, min · p. 2
- Current gain, least
- 50 · DC current gain, IC = 1.0 mAdc, VCE = 10 Vdc, min · p. 2
- Current gain, least
- 75 · DC current gain, IC = 10 mAdc, VCE = 10 Vdc, min · p. 2
- Current gain, least
- 100 · DC current gain, IC = 150 mAdc, VCE = 10 Vdc, pulsed, min · p. 2
- Current gain, least
- 40 · DC current gain, IC = 500 mAdc, VCE = 10 Vdc, pulsed, min · p. 2
What it is and has
2- Function
- General purpose transistor · p. 1
- Transistor type
- NPN silicon · p. 1
Specifications
48| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Collector −Emitter Voltage VCEO | MMBT2222AL | max 40 Vdc | 1 |
| Collector −Base Voltage VCBO | MMBT2222AL | max 75 Vdc | 1 |
| Emitter −Base Voltage VEBO | MMBT2222AL | max 6 Vdc | 1 |
| Collector Current − Continuous IC | max 600 mAdc | 1 | |
| Collector Current − Peak (Note 3) ICM | Reference SOA curve | max 1100 mAdc | 1 |
| Total Device Dissipation FR− 5 Board PD | Note 1; TA = 25°C | max 225 mW | 1 |
| Derate above 25°C PD | FR− 5 Board | max 1.8 mW/°C | 1 |
| Thermal Resistance, Junction−to−Ambient RqJA | FR− 5 Board | max 556 °C/W | 1 |
| Total Device Dissipation Alumina PD | Substrate (Note 2); TA = 25°C | max 300 mW | 1 |
| Derate above 25°C PD | Alumina substrate | max 2.4 mW/°C | 1 |
| Thermal Resistance, Junction−to−Ambient RqJA | Alumina substrate | max 417 °C/W | 1 |
| Junction and Storage Temperature Range TJ, Tstg | min -55 · max 150 °C | 1 | |
| Collector −Emitter Breakdown Voltage V(BR)CEO | MMBT2222A; IC = 10 mAdc, IB = 0; TA = 25°C | min 40 Vdc | 2 |
| Collector −Base Breakdown Voltage V(BR)CBO | MMBT2222A; IC = 10 mAdc, IE = 0; TA = 25°C | min 75 Vdc | 2 |
| Emitter −Base Breakdown Voltage V(BR)EBO | MMBT2222A; IE = 10 mAdc, IC = 0; TA = 25°C | min 6 Vdc | 2 |
| Collector Cutoff Current ICEX | MMBT2222A; VCE = 60 Vdc, VEB(off) = 3.0 Vdc; TA = 25°C | max 10 nAdc | 2 |
| Collector Cutoff Current ICBO | MMBT2222A; VCB = 60 Vdc, IE = 0; TA = 25°C | max 0.01 mAdc | 2 |
| Collector Cutoff Current ICBO | MMBT2222A; VCB = 60 Vdc, IE = 0, TA = 125°C | max 10 mAdc | 2 |
| Emitter Cutoff Current IEBO | MMBT2222A; VEB = 3.0 Vdc, IC = 0; TA = 25°C | max 100 nAdc | 2 |
| Base Cutoff Current IBL | MMBT2222A; VCE = 60 Vdc, VEB(off) = 3.0 Vdc; TA = 25°C | max 20 nAdc | 2 |
| DC Current Gain hFE | IC = 0.1 mAdc, VCE = 10 Vdc; TA = 25°C | min 35 − | 2 |
| DC Current Gain hFE | IC = 1.0 mAdc, VCE = 10 Vdc; TA = 25°C | min 50 − | 2 |
| DC Current Gain hFE | IC = 10 mAdc, VCE = 10 Vdc; TA = 25°C | min 75 − | 2 |
| DC Current Gain hFE | MMBT2222A only; IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C | min 35 − | 2 |
| DC Current Gain hFE | IC = 150 mAdc, VCE = 10 Vdc; Note 4; TA = 25°C | min 100 · max 300 − | 2 |
| DC Current Gain hFE | IC = 150 mAdc, VCE = 1.0 Vdc; Note 4; TA = 25°C | min 50 − | 2 |
| DC Current Gain hFE | MMBT2222A; IC = 500 mAdc, VCE = 10 Vdc; Note 4; TA = 25°C | min 40 − | 2 |
| Collector −Emitter Saturation Voltage (Note 4) VCE(sat) | MMBT2222A; IC = 150 mAdc, IB = 15 mAdc; TA = 25°C | max 0.3 Vdc | 2 |
| Collector −Emitter Saturation Voltage (Note 4) VCE(sat) | MMBT2222A; IC = 500 mAdc, IB = 50 mAdc; TA = 25°C | max 1 Vdc | 2 |
| Base −Emitter Saturation Voltage (Note 4) VBE(sat) | MMBT2222A; IC = 150 mAdc, IB = 15 mAdc; TA = 25°C | min 0.6 · max 1.2 Vdc | 2 |
| Base −Emitter Saturation Voltage (Note 4) VBE(sat) | MMBT2222A; IC = 500 mAdc, IB = 50 mAdc; TA = 25°C | max 2 Vdc | 2 |
| Current −Gain − Bandwidth Product (Note 5) fT | MMBT2222A; IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz; TA = 25°C | min 300 MHz | 2 |
| Output Capacitance Cobo | VCB = 10 Vdc, IE = 0, f = 1.0 MHz; TA = 25°C | max 8 pF | 2 |
| Input Capacitance Cibo | MMBT2222A; VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz; TA = 25°C | max 25 pF | 2 |
| Input Impedance hie | MMBT2222A; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | min 2 · max 8 kW | 2 |
| Input Impedance hie | MMBT2222A; IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | min 0.25 · max 1.25 kW | 2 |
| Voltage Feedback Ratio hre | MMBT2222A; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | max 8 X 10− 4 | 2 |
| Voltage Feedback Ratio hre | MMBT2222A; IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | max 4 X 10− 4 | 2 |
| Small −Signal Current Gain hfe | MMBT2222A; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | min 50 · max 300 − | 2 |
| Small −Signal Current Gain hfe | MMBT2222A; IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | min 75 · max 375 − | 2 |
| Output Admittance hoe | MMBT2222A; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | min 5 · max 35 mmhos | 3 |
| Output Admittance hoe | MMBT2222A; IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz; TA = 25°C | min 25 · max 200 mmhos | 3 |
| Collector Base Time Constant rb, Cc | MMBT2222A; IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz; TA = 25°C | max 150 ps | 3 |
| Noise Figure NF | MMBT2222A; IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz; TA = 25°C | max 4 dB | 3 |
| Delay Time td | VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc; TA = 25°C | max 10 ns | 3 |
| Rise Time tr | VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc; TA = 25°C | max 25 ns | 3 |
| Storage Time ts | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc; TA = 25°C | max 225 ns | 3 |
| Fall Time tf | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc; TA = 25°C | max 60 ns | 3 |
Pins, by the datasheet
3- 1 BASE
- Base. · p. 7
- 2 EMITTER
- Emitter. · p. 7
- 3 COLLECTOR
- Collector. · p. 7
Ordering codes, by the datasheet
4- MMBT2222ALT1G
- SOT−23 · Pb−Free; marking 1P; 3000 / Tape & Reel · p. 6
- SMMBT2222ALT1G
- SOT−23 · Pb−Free; marking 1P; 3000 / Tape & Reel; automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable · p. 6
- MMBT2222ALT3G
- SOT−23 · Pb−Free; marking 1P; 10,000 / Tape & Reel · p. 6
- SMMBT2222ALT3G
- SOT−23 · Pb−Free; marking 1P; 10,000 / Tape & Reel; automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable · p. 6
Parameters
14- Collector - Emitter Voltage VCEO
- 40V
- Configuration
- Standalone
- Current - Collector Cutoff
- 10nA
- Current - Collector(Ic)
- 600mA
- DC Current Gain
- 35
- Emitter-Base Voltage(Vebo)
- 6V
- Junction Temperature(Max)
- 150℃
- Number
- 1 NPN
- Operating Temperature
- -55℃~+150℃
- Pd - Power Dissipation
- 225mW
- Thermal Resistance(Junction to Ambient)
- 556℃/W
- Transition frequency(fT)
- 250MHz
- Vce Saturation(VCE(sat))
- 300mV
- type
- NPN
Order codes
2- MMBT2222ALT3GLCSC C416011
- MMBT2222ALT1GLCSC C82460
Pinout
3| Pin | Name | Type |
|---|---|---|
| 1 | B | Input |
| 2 | E | Passive |
| 3 | C | Passive |
Open-source boards using it
All 1Show this part on your page
<iframe src="https://pcbkit.io/embed/parts/onsemi/MMBT2222AL" title="MMBT2222AL in PCBKit" width="100%" height="480" style="border:0;border-radius:12px" allow="fullscreen" loading="lazy"></iframe><img src="https://pcbkit.io/embed/parts/onsemi/MMBT2222AL.jpg" alt="MMBT2222AL" width="1200" height="900">[](https://pcbkit.io/parts/onsemi/MMBT2222AL)Questions
Is there a KiCad symbol and footprint for the MMBT2222AL?
Yes. The symbol is Transistor_BJT:MMBT2222A and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the MMBT2222AL?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the MMBT2222AL datasheet?
onsemi publishes it: the Datasheet link on this page opens it.
Where can I order the MMBT2222AL?
JLCPCB lists it as part C82460, with 1,331,170 in stock; the sellers' links on this page open their listings.
What can replace the MMBT2222AL?
Parts like it in the library: the SS8050 by hongjiacheng, the MMBT5551 by hongjiacheng, the MMBT5401 by hongjiacheng and the MMBT5551 by Jiangsu Changjing Electronics Technology (CJ). Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the MMBT2222AL?
1 board in 1 repository on GitHub; the most starred are listed on this page, with their KiCad files.
Parts like it
8
SS8050
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SOT-23-55℃~+150℃ 1 NPN 160V 200mV 300 300MHz 300mW 50nA 600mA 6V NPN SOT-23 Bipolar (BJT) ROHSMDDBipolar (BJT)