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2N7002K

Diodes IncorporatedExtended

-55℃~+150℃ 1 N-channel 1.2Ω@10V、1.4Ω@5V 1.6V 2.9pF 300pC@4.5V 30pF 380mA 4.2pF 540mW 60V SOT-23 MOSFETs ROHS

Part id
diodes/2N7002K
Category
MOSFETs
Package
SOT-23
Pins
3
In stock
857,641 at JLCPCB (C85047)
Used on
143 open-source boards

Overview

The 2N7002K is a MOSFET made by Diodes Incorporated in a SOT-23 package with 3 pins. -55℃~+150℃ 1 N-channel 1.2Ω@10V、1.4Ω@5V 1.6V 2.9pF 300pC@4.5V 30pF 380mA 4.2pF 540mW 60V SOT-23 MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Transistor_FET:2N7002K, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 857,641 are in stock at JLCPCB (part C85047). 143 open-source boards in 110 repositories on GitHub use it.

Symbol

123
Transistor_FET:2N7002KFrom KiCad's library

Footprint

123
Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

14
Drain-source, most
60 V · Drain-source voltage, absolute max · p. 2
Gate-source, most
20 V · Gate-source voltage, absolute max ±20 V · p. 2
Drain current, most
380 mA · Continuous drain current max, VGS = 10V, TA = +25°C, steady state, Note 6 · p. 2
Drain current, most
310 mA · Continuous drain current max, VGS = 5V, TA = +25°C, steady state, Note 6 · p. 2
On resistance
2 Ω · Static drain-source on-resistance max, VGS = 10V, ID = 0.5A · p. 2
On resistance
3 Ω · Static drain-source on-resistance max, VGS = 5V, ID = 0.05A · p. 2
Gate threshold
1.6 V · Gate threshold voltage typical, VDS = 10V, ID = 1mA · p. 2
Junction, hottest
150 °C · Operating junction temperature max · p. 2
Junction to air (SOT23)
357 K/W · Junction to ambient, steady state, Note 5 · p. 2
Junction to air (SOT23)
292 K/W · Junction to ambient, t<5s, Note 5 · p. 2
Junction to air (SOT23)
240 K/W · Junction to ambient, steady state, Note 6 · p. 2
Junction to air (SOT23)
197 K/W · Junction to ambient, t<5s, Note 6 · p. 2
Junction to case (SOT23)
91 K/W · Junction to case, Note 6 · p. 2
Edge
3.4 ns · Turn-on rise time typical, VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA · p. 2

What it is and has

4
MOSFET type
N-channel enhancement mode · p. 1
Protection
ESD protected up to 2kV · p. 1
Package
SOT23 · p. 1
Moisture sensitivity
Level 1 per J-STD-020 · p. 1

Specifications

39
ParameterConditionsAs printedPage
Drain-Source Voltage VDSSTA = +25°Cmax 60 V2
Gate-Source Voltage VGSSTA = +25°Cmin -20 · max 20 V2
Continuous Drain Current (Note 6) VGS = 10V IDSteady State, TA = +25°C; Note 6max 380 mA2
Continuous Drain Current (Note 6) VGS = 10V IDSteady State, TA = +70°C; Note 6max 300 mA2
Continuous Drain Current (Note 6) VGS = 10V IDt<5s, TA = +25°C; Note 6max 430 mA2
Continuous Drain Current (Note 6) VGS = 10V IDt<5s, TA = +70°C; Note 6max 340 mA2
Continuous Drain Current (Note 6) VGS = 5V IDSteady State, TA = +25°C; Note 6max 310 mA2
Continuous Drain Current (Note 6) VGS = 5V IDSteady State, TA = +70°C; Note 6max 240 mA2
Continuous Drain Current (Note 6) VGS = 5V IDt<5s, TA = +25°C; Note 6max 350 mA2
Continuous Drain Current (Note 6) VGS = 5V IDt<5s, TA = +70°C; Note 6max 270 mA2
Maximum Continuous Body Diode Forward Current (Note 6) ISTA = +25°C; Note 6max 0.5 A2
Pulsed Drain Current (10us Pulse, Duty Cycle = 1%) (Note 6) IDMTA = +25°C; 10us Pulse, Duty Cycle = 1%; Note 6max 1.2 A2
Total Power Dissipation (Note 5) PDTA = +25°C; device mounted on FR-4 PCB, with minimum recommended pad layoutmax 370 mW2
Thermal Resistance, Junction to Ambient (Note 5) RθJASteady State; TA = +25°C; device mounted on FR-4 PCB, with minimum recommended pad layoutmax 357 °C/W2
Thermal Resistance, Junction to Ambient (Note 5) RθJAt<5s; TA = +25°C; device mounted on FR-4 PCB, with minimum recommended pad layoutmax 292 °C/W2
Total Power Dissipation (Note 6) PDTA = +25°C; device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sidedmax 540 mW2
Thermal Resistance, Junction to Ambient (Note 6) RθJASteady State; TA = +25°C; device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sidedmax 240 °C/W2
Thermal Resistance, Junction to Ambient (Note 6) RθJAt<5s; TA = +25°C; device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sidedmax 197 °C/W2
Thermal Resistance, Junction to Case (Note 6) RθJCTA = +25°C; device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sidedmax 91 °C/W2
Operating and Storage Temperature Range TJ, TSTGmin -55 · max 150 °C2
Drain-Source Breakdown Voltage BVDSSTA = +25°C; VGS = 0V, ID = 10uA; Note 7min 60 V2
Zero Gate Voltage Drain Current IDSSTA = +25°C; VDS = 60V, VGS = 0V; Note 7max 1 uA2
Gate-Source Leakage IGSSTA = +25°C; VGS = ±20V, VDS = 0V; Note 7; maximum magnitude ±10 uAmax 10 uA2
Gate Threshold Voltage VGS(TH)TA = +25°C; VDS = 10V, ID = 1mA; Note 7min 1 · typ 1.6 · max 2.5 V2
Static Drain-Source On-Resistance RDS(ON)TA = +25°C; VGS = 10V, ID = 0.5A; Note 7max 2 Ω2
Static Drain-Source On-Resistance RDS(ON)TA = +25°C; VGS = 5V, ID = 0.05A; Note 7max 3 Ω2
Forward Transfer Admittance |Yfs|TA = +25°C; VDS =10V, ID = 0.2A; Note 7min 80 ms2
Diode Forward Voltage VSDTA = +25°C; VGS = 0V, IS = 115mA; Note 7typ 0.75 · max 1.1 V2
Input Capacitance CissTA = +25°C; VDS = 25V, VGS = 0V, f = 1.0MHz; Note 8typ 30 · max 50 pF2
Output Capacitance CossTA = +25°C; VDS = 25V, VGS = 0V, f = 1.0MHz; Note 8typ 4.2 · max 25 pF2
Reverse Transfer Capacitance CrssTA = +25°C; VDS = 25V, VGS = 0V, f = 1.0MHz; Note 8typ 2.9 · max 5 pF2
Gate Resistance RgTA = +25°C; f = 1MHz , VGS = 0V, VDS = 0V; Note 8typ 133 Ω2
Total Gate Charge QgTA = +25°C; VGS = 4.5V, VDS = 10V, ID = 250mA; Note 8typ 0.3 nC2
Gate-Source Charge QgsTA = +25°C; VGS = 4.5V, VDS = 10V, ID = 250mA; Note 8typ 0.2 nC2
Gate-Drain Charge QgdTA = +25°C; VGS = 4.5V, VDS = 10V, ID = 250mA; Note 8typ 0.08 nC2
Turn-On Delay Time tD(ON)TA = +25°C; VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA; Note 8typ 3.9 ns2
Turn-On Rise Time tRTA = +25°C; VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA; Note 8typ 3.4 ns2
Turn-Off Delay Time tD(OFF)TA = +25°C; VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA; Note 8typ 15.7 ns2
Turn-Off Fall Time tFTA = +25°C; VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA; Note 8typ 9.9 ns2

Ordering codes, by the datasheet

4
2N7002K-7
SOT23 · Standard compliance; 3000/Tape & Reel · p. 1
2N7002KQ-7
SOT23 · Automotive compliance; 3000/Tape & Reel · p. 1
2N7002K-13
SOT23 · Standard compliance; 10000/Tape & Reel · p. 1
2N7002KQ-13
SOT23 · Automotive compliance; 10000/Tape & Reel · p. 1

Open-source boards using it

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    rgw3d/1KCubeSat_Hardware

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    Z5524

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    Delta pico

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    Powerful scientific calculator based on the Raspberry Pi Pico

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  • 2 layers32 × 20 mmGd32 encoder, the printed circuit board in 3D

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Parts like it

8

Questions

Is there a KiCad symbol and footprint for the 2N7002K?

Yes. The symbol is Transistor_FET:2N7002K and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the 2N7002K?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the 2N7002K datasheet?

Diodes Incorporated publishes it: the Datasheet link on this page opens it.

Where can I order the 2N7002K?

JLCPCB lists it as part C85047, with 857,641 in stock; the sellers' links on this page open their listings.

What can replace the 2N7002K?

Parts like it in the library: the SI2308A by UMW, the SI2310 by GOODWORK, the AS2324 by AnBon and the LP2309LT1G by Leshan Radio (LRC). Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the 2N7002K?

143 boards in 110 repositories on GitHub; the most starred are listed on this page, with their KiCad files.