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IRLD024PBF on a board, in 3D

IRLD024PBF

Vishay Intertechnology

-55℃~+175℃ 1 N-channel 1.3W 140mΩ@4V 18nC@5V 2.5A 2V 360pF 53pF 60V 870pF N-Channel ±10V HVMDIP-4 MOSFETs ROHS

Extended
DatasheetJLCPCBLCSCvishay/IRLD024PBF
Category
MOSFETs
Package
HVMDIP-4
Pins
4

Overview

The IRLD024PBF is a MOSFET made by Vishay Intertechnology in a HVMDIP-4 package with 4 pins. -55℃~+175℃ 1 N-channel 1.3W 140mΩ@4V 18nC@5V 2.5A 2V 360pF 53pF 60V 870pF N-Channel ±10V HVMDIP-4 MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_NMOS_1G_2S_3D_4D, from PCBKit's generic symbols) and its footprint (EasyEDA_Cloud:HVMDIP-4_L4.9-W6.2-P2.54-LS7.7-BL, from EasyEDA), ready for a KiCad board. JLCPCB lists it (part C141564). 12 open-source boards in 10 repositories on GitHub use it.

Symbol

Pinmap_Generic:Q_NMOS_1G_2S_3D_4DFrom PCBKit's generic symbols

Footprint

1234
EasyEDA_Cloud:HVMDIP-4_L4.9-W6.2-P2.54-LS7.7-BLFrom EasyEDA

From the datasheet

9
Drain-source, most
60 V · Drain-source voltage, max · p. 1
Gate-source, most
10 V · Gate-source voltage magnitude, max ±10 V · p. 1
Drain current, most
2.5 A · Continuous drain current at TA = 25 °C, VGS = 5.0 V, max · p. 1
Junction, hottest
175 °C · Operating junction temperature, max · p. 1
Junction to air (HVMDIP)
120 K/W · Junction-to-ambient thermal resistance, max · p. 2
Gate threshold
2 V · Gate-source threshold at VDS = VGS, ID = 250 uA, max · p. 2
On resistance
100 mΩ · VGS = 5.0 V, ID = 1.5 A, max · p. 2
On resistance
140 mΩ · VGS = 4.0 V, ID = 1.3 A, max · p. 2
Edge
41 ns · Fall time at VDD = 30 V, ID = 17 A, typical · p. 2

What it is and has

4
Configuration
Single · p. 1
Gate drive
Logic-level · p. 1
On-state resistance specification
Specified at VGS = 4 V and 5 V · p. 1
Compliance
RoHS Directive 2002/95/EC · p. 1

Specifications

38
ParameterConditionsAs printedPage
Drain-Source Voltage VDSTA = 25 °Cmax 60 V1
Gate-Source Voltage VGSTA = 25 °Cmin -10 · max 10 V1
Continuous Drain Current IDVGS at 5.0 V, TA = 25 °Cmax 2.5 A1
Continuous Drain Current IDVGS at 5.0 V, TA = 100 °Cmax 1.8 A1
Pulsed Drain Current IDMRepetitive rating; pulse width limited by maximum junction temperaturemax 20 A1
Linear Derating Factormax 0.0083 W/°C1
Single Pulse Avalanche Energy EASVDD = 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.5 Amax 91 mJ1
Maximum Power Dissipation PDTA = 25 °Cmax 1.3 W1
Peak Diode Recovery dV/dt dV/dtISD  17 A, dI/dt  140 A/us, VDD  VDS, TJ  175 °Cmax 4.5 V/ns1
Operating Junction and Storage Temperature Range TJ, Tstgmin -55 · max 175 °C1
Soldering Recommendations (Peak Temperature)for 10 s; 1.6 mm from casemax 300 °C1
Maximum Junction-to-Ambient RthJAHVMDIPmax 120 °C/W2
Drain-Source Breakdown Voltage VDSVGS = 0 V, ID = 250 uAmin 60 V2
VDS Temperature Coefficient VDS/TJReference to 25 °C, ID = 1 mAtyp 0.06 V/°C2
Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 uAmin 1 · max 2 V2
Gate-Source Leakage IGSSVGS = ± 10 Vmin -100 · max 100 nA2
Zero Gate Voltage Drain Current IDSSVDS = 60 V, VGS = 0 Vmax 25 uA2
Zero Gate Voltage Drain Current IDSSVDS = 48 V, VGS = 0 V, TJ = 150 °Cmax 250 uA2
Drain-Source On-State Resistance RDS(on)VGS = 5.0 V, ID = 1.5 A; pulse width  300 us; duty cycle  2 %max 0.1 2
Drain-Source On-State Resistance RDS(on)VGS = 4.0 V, ID = 1.3 A; pulse width  300 us; duty cycle  2 %max 0.14 2
Forward Transconductance gfsVDS = 25 V, ID = 1.5 A; pulse width  300 us; duty cycle  2 %min 3.7 S2
Input Capacitance CissVGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5typ 870 pF2
Output Capacitance CossVGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5typ 360 pF2
Reverse Transfer Capacitance CrssVGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5typ 53 pF2
Total Gate Charge QgVGS = 5.0 V, ID = 17 A, VDS = 48 V, see fig. 6 and 13; pulse width  300 us; duty cycle  2 %max 18 nC2
Gate-Source Charge QgsVGS = 5.0 V, ID = 17 A, VDS = 48 V, see fig. 6 and 13; pulse width  300 us; duty cycle  2 %max 4.5 nC2
Gate-Drain Charge QgdVGS = 5.0 V, ID = 17 A, VDS = 48 V, see fig. 6 and 13; pulse width  300 us; duty cycle  2 %max 12 nC2
Turn-On Delay Time td(on)VDD = 30 V, ID = 17 A, Rg = 9.0 , RD = 1.7 , see fig. 10; pulse width  300 us; duty cycle  2 %typ 11 ns2
Rise Time trVDD = 30 V, ID = 17 A, Rg = 9.0 , RD = 1.7 , see fig. 10; pulse width  300 us; duty cycle  2 %typ 110 ns2
Turn-Off Delay Time td(off)VDD = 30 V, ID = 17 A, Rg = 9.0 , RD = 1.7 , see fig. 10; pulse width  300 us; duty cycle  2 %typ 23 ns2
Fall Time tfVDD = 30 V, ID = 17 A, Rg = 9.0 , RD = 1.7 , see fig. 10; pulse width  300 us; duty cycle  2 %typ 41 ns2
Internal Drain Inductance LDBetween lead, 6 mm (0.25") from package and center of die contacttyp 4 nH2
Internal Source Inductance LSBetween lead, 6 mm (0.25") from package and center of die contacttyp 6 nH2
Continuous Source-Drain Diode Current ISIntegral reverse p - n junction diodemax 2.5 A2
Pulsed Diode Forward Current ISMIntegral reverse p - n junction diode; repetitive rating; pulse width limited by maximum junction temperaturemax 20 A2
Body Diode Voltage VSDTJ = 25 °C, IS = 2.5 A, VGS = 0 V; pulse width  300 us; duty cycle  2 %max 1.5 V2
Body Diode Reverse Recovery Time trrTJ = 25 °C, IF = 17 A, dI/dt = 100 A/us; pulse width  300 us; duty cycle  2 %typ 110 · max 260 ns2
Body Diode Reverse Recovery Charge QrrTJ = 25 °C, IF = 17 A, dI/dt = 100 A/us; pulse width  300 us; duty cycle  2 %typ 0.49 · max 1.5 uC2

Ordering codes, by the datasheet

4
IRLD024PbF
HVMDIP · Lead (Pb)-free · p. 1
SiHLD024-E3
HVMDIP · Lead (Pb)-free · p. 1
IRLD024
HVMDIP · SnPb · p. 1
SiHLD024
HVMDIP · SnPb · p. 1

Parameters

16
Current - Continuous Drain(Id)
2.5A
Drain to Source Voltage
60V
Gate Charge(Qg)
18nC@5V
Gate Threshold Voltage (Vgs(th))
2V
Input Capacitance(Ciss)
870pF
Junction Temperature(Max)
175℃
Number
1 N-channel
Operating Temperature
-55℃~+175℃
Output Capacitance(Coss)
360pF
Pd - Power Dissipation
1.3W
RDS(on)
140mΩ@4V
Reverse Transfer Capacitance (Crss@Vds)
53pF
Rise Time
41ns
Thermal Resistance(Junction to Ambient)
120℃/W
Type
N-Channel
Vgs
±10V

Order codes

1

Pinout

4
The pins of the IRLD024PBF
PinNameType
1GInput
2SPassive
3DPassive
4DPassive

Open-source boards using it

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    ECE445L Lab7

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    The hw folder should contain your schematic and board files for your PCB or circuits. In later labs, you will be creating schematics for your circuit in EAGLE. A setup tutorial can be found here.

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    Andres-Wearden/Lab10

    The typical explanation for the repo structure. Lab specific instructions can be found further below.

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  • 2 layers115 × 94 mmECE445L Starter, the printed circuit board in 3D

    ECE445L Starter

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    The typical explanation for the repo structure. Lab specific instructions can be found further below.

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  • 2 layers115 × 94 mmECE445L Lab7, the printed circuit board in 3D

    ECE445L Lab7

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Questions

Is there a KiCad symbol and footprint for the IRLD024PBF?

Yes. The symbol is Pinmap_Generic:Q_NMOS_1G_2S_3D_4D and the footprint EasyEDA_Cloud:HVMDIP-4_L4.9-W6.2-P2.54-LS7.7-BL, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the IRLD024PBF?

HVMDIP-4, with 4 pins. Its footprint is drawn on this page.

Where is the IRLD024PBF datasheet?

Vishay Intertechnology publishes it: the Datasheet link on this page opens it.

Where can I order the IRLD024PBF?

JLCPCB lists it as part C141564, with 0 in stock; the sellers' links on this page open their listings.

What can replace the IRLD024PBF?

Parts like it in the library: the IRFD024PBF by Vishay Intertechnology. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the IRLD024PBF?

12 boards in 10 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

Parts like it

1