AMC1301DWV

Q: Is there a KiCad symbol and footprint for the AMC1301DWV?

Yes. The symbol is EasyEDA_Cloud:AMC1200STDUBRQ1 and the footprint Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, both drawn on this page. PCBKit places them on a board for you when you design with it.

Q: What package is the AMC1301DWV?

SOIC-8, with 8 pins. Its footprint is drawn on this page.

Q: Where is the AMC1301DWV datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Q: Where can I order the AMC1301DWV?

JLCPCB lists it as part C1346781, with 2 in stock; the sellers' links on this page open their listings.

Q: What can replace the AMC1301DWV?

Parts like it in the library: the AMC1350DWVR by Texas Instruments, the CA-IS1311G by Chipanalog, the ISO224ADWVR by Texas Instruments and the PAI8300E-W5R by 2Pai Semi. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Q: Which open-source boards use the AMC1301DWV?

14 boards in 9 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

Texas InstrumentsExtended

-40℃~+125℃ 15kV/us 30uA 5000 50uV 8.2 Differential Isolated ΔΣ (Sigma-Delta) modulator、Fault detection、Full-differential topology ±250mV SOIC-8 Isolation Amplifiers ROHS

Datasheet JLCPCB LCSC

Part id: ti/AMC1301DWV
Category: Isolation Amplifiers
Package: SOIC-8
Pins: 8
In stock: 2 at JLCPCB (C1346781)
Used on: 14 open-source boards

Overview

The AMC1301DWV is an isolation Amplifier made by Texas Instruments in a SOIC-8 package with 8 pins. -40℃~+125℃ 15kV/us 30uA 5000 50uV 8.2 Differential Isolated ΔΣ (Sigma-Delta) modulator、Fault detection、Full-differential topology ±250mV SOIC-8 Isolation Amplifiers ROHS.

PCBKit's library has its KiCad symbol (EasyEDA_Cloud:AMC1200STDUBRQ1, from EasyEDA) and its footprint (Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, from KiCad's library), ready for a KiCad board. 2 are in stock at JLCPCB (part C1346781). 14 open-source boards in 9 repositories on GitHub use it.

Symbol

EasyEDA_Cloud:AMC1200STDUBRQ1From EasyEDA

Footprint

Package_SO:SOIC-8_3.9x4.9mm_P1.27mmFrom KiCad's library

From the datasheet

Supply, least: 3 V · VDD1, recommended operating min · p. 5
Supply, most: 5.5 V · VDD1, recommended operating max · p. 5
Supply, absolute maximum: 7 V · VDD1 to GND1, absolute max · p. 5
Works from: -40 °C · AMC1301 ambient operating min · p. 5
Works up to: 125 °C · AMC1301 ambient operating max · p. 5
Junction, hottest: 150 °C · Junction temperature absolute max · p. 5
A pin gives at most: 10 mA · Continuous input current, any pin except power-supply pins, max magnitude · p. 5
Takes working: 12.5 mA · sum of VDD1 and VDD2 typical supply currents, VDD1 = 5 V and VDD2 = 3.3 V · p. 10
Junction to air (DWV (SOIC)): 110.1 K/W · Junction-to-ambient thermal resistance · p. 6
Junction to case (DWV (SOIC)): 51.7 K/W · Junction-to-case top thermal resistance · p. 6
Junction to board (DWV (SOIC)): 66.4 K/W · Junction-to-board thermal resistance · p. 6
Edge: 2 µs · Output signal rise time, typical; fall time equal · p. 10

What it is and has

Amplifier: Precision, ±250-mV input, reinforced isolated amplifier · p. 1
Fixed gain: 8.2 V/V · p. 1
Offset error: ±0.2 mV maximum · p. 1
Offset drift: ±3 µV/°C maximum · p. 1
Gain error: ±0.3% maximum · p. 1
Gain drift: ±50 ppm/°C maximum · p. 1
Nonlinearity: 0.03% maximum · p. 1
Supply operation: 3.3 V on high-side and low-side · p. 1
Diagnostics: System-level diagnostic features · p. 1
Isolation certification: 5000 VRMS for 1 minute per UL1577 · p. 1
Package: DWV (SOIC, 8), nominal body 5.85 mm × 7.50 mm · p. 1

Specifications

Parameter	Conditions	As printed	Page
Operating ambient temperature TA	AMC1301	min -40 · max 125 °C	4
Input offset drift TCVOS	AMC1301; ± maximum	max 3 uV/°C	4
Gain error drift TCEG	AMC1301; ± maximum	max 50 ppm/°C	4
Power-supply voltage	High-side VDD1 to GND1	min -0.3 · max 7 V	5
Power-supply voltage	Low-side VDD2 to GND2	min -0.3 · max 7 V	5
Input current	Continuous, any pin except power-supply pins	min -10 · max 10 mA	5
Temperature TJ	Junction	max 150 °C	5
Temperature Tstg	Storage	min -65 · max 150 °C	5
Electrostatic discharge V(ESD)	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001; ± rating	max 2000 V	5
Electrostatic discharge V(ESD)	Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002; ± rating	max 1000 V	5
High-side power supply	VDD1 to GND1; typ field represents NOM	min 3 · typ 5 · max 5.5 V	5
Low-side power supply	VDD2 to GND2; typ field represents NOM	min 3 · typ 3.3 · max 5.5 V	5
Differential input voltage before clipping output VClipping	VIN = VINP – VINN; ± nominal	typ 302.7 mV	5
Specified linear differential full-scale voltage VFSR	VIN = VINP – VINN	min -250 · max 250 mV	5
Absolute common-mode input voltage(1)	(VINP + VINN) / 2 to GND1; maximum VDD1	min -2 V	5
Operating common-mode input voltage VCM	(VINP + VINN) / 2 to GND1; maximum VDD1 – 2.1	min -0.16 V	5
Specified ambient temperature TA	AMC1301	min -40 · max 125 °C	5
Junction-to-ambient thermal resistance RθJA	DWV (SOIC), 8 PINS	typ 110.1 °C/W	6
Junction-to-case (top) thermal resistance RθJC(top)	DWV (SOIC), 8 PINS	typ 51.7 °C/W	6
Junction-to-board thermal resistance RθJB	DWV (SOIC), 8 PINS	typ 66.4 °C/W	6
Junction-to-top characterization parameter ΨJT	DWV (SOIC), 8 PINS	typ 16 °C/W	6
Junction-to-board characterization parameter ΨJB	DWV (SOIC), 8 PINS	typ 64.5 °C/W	6
Maximum power dissipation (both sides) PD	VDD1 = VDD2 = 5.5 V	max 99 mW	6
Maximum power dissipation (high-side) PD1	VDD1 = 3.6 V	max 31 mW	6
Maximum power dissipation (high-side) PD1	VDD1 = 5.5 V	max 54 mW	6
Maximum power dissipation (low-side) PD2	VDD2 = 3.6 V	max 26 mW	6
Maximum power dissipation (low-side) PD2	VDD2 = 5.5 V	max 45 mW	6
External clearance(1) CLR	Shortest pin-to-pin distance through air; ≥ minimum	min 8.5 mm	7
External creepage(1) CPG	Shortest pin-to-pin distance across the package surface; ≥ minimum	min 8.5 mm	7
Distance through insulation DTI	Minimum internal gap (internal clearance) of the double insulation; ≥ minimum	min 0.021 mm	7
Comparative tracking index CTI	DIN EN 60112 (VDE 0303-11); IEC 60112; ≥ minimum	min 600 V	7
Maximum repetitive peak isolation voltage VIORM	At AC voltage	max 1500 VPK	7
Maximum-rated isolation working voltage VIOWM	At AC voltage (sine wave)	max 1000 VRMS	7
Maximum-rated isolation working voltage VIOWM	At DC voltage	max 1500 VDC	7
Maximum transient isolation voltage VIOTM	VTEST = VIOTM, t = 60 s (qualification test); VTEST = 1.2 × VIOTM, t = 1 s (100% production test)	max 7000 VPK	7
Maximum impulse voltage(2) VIMP	Tested in air, 1.2/50-us waveform per IEC 62368-1	max 7700 VPK	7
Maximum surge isolation voltage(3) VIOSM	Tested in oil (qualification test), 1.2/50-us waveform per IEC 62368-1	max 10000 VPK	7
Apparent charge((5)) qpd	Method a, after input/output safety test subgroups 2 and 3; Vpd(ini) = VIOTM, tini = 60 s, Vpd(m) = 1.2 × VIORM, tm = 10 s	max 5 pC	7
Apparent charge((5)) qpd	Method a, after environmental tests subgroup 1; Vpd(ini) = VIOTM, tini = 60 s, Vpd(m) = 1.6 × VIORM, tm = 10 s	max 5 pC	7
Apparent charge((5)) qpd	Method b1, at preconditioning (type test) and routine test; Vpd(ini) = 1.2 x VIOTM, tini = 1 s, Vpd(m) = 1.875 × VIORM, tm = 1 s	max 5 pC	7
Apparent charge((5)) qpd	Method b2, at routine test (100% production); Vpd(ini) = Vpd(m) = 1.2 x VIOTM, tini = tm = 1 s	max 5 pC	7
Barrier capacitance, input to output(5) CIO	VIO = 0.5 VPP at 1 MHz; approximate value	typ 1.2 pF	7
Withstand isolation voltage VISO	UL1577; VTEST = VISO, t = 60 s (qualification test); VTEST = 1.2 × VISO, t = 1 s (100% production test)	max 5000 VRMS	7
Safety input, output, or supply current IS	RθJA = 110.1°C/W, VDDx = 5.5 V, TJ = 150°C, TA = 25°C	max 206 mA	8
Safety input, output, or supply current IS	RθJA = 110.1°C/W, VDDx = 3.6 V, TJ = 150°C, TA = 25°C	max 315 mA	8
Safety input, output, or total power PS	RθJA = 110.1°C/W, TJ = 150°C, TA = 25°C	max 1135 mW	8
Maximum safety temperature TS		max 150 °C	8
Hysteresis of common-mode overvoltage detection level		typ 60 mV	9
Input offset voltage(1) VOS	Initial, at TA = 25°C, INP = INN = GND1; typical ±0.05	min -0.2 · typ 0.05 · max 0.2 mV	9
Input offset drift(1) (4) TCVOS	AMC1301; typical ±1	min -3 · typ 1 · max 3 uV/°C	9
Common-mode rejection ratio CMRR	fIN = 0 Hz, VCM min ≤ VCM ≤ VCM max	typ -93 dB	9
Common-mode rejection ratio CMRR	fIN = 10 kHz, VCM min ≤ VCM ≤ VCM max	typ -93 dB	9
Single-ended input resistance RIN	INN = GND1	typ 18 kΩ	9
Differential input resistance RIND		typ 22 kΩ	9
Input bias current IIB	INP = INN = GND1; IIB = (IIBP + IIBN) / 2	min -41 · typ -30 · max -24 uA	9
Input bias current drift TCIIB		typ 1 nA/°C	9
Differential input capacitance CIND		typ 1 pF	9
Nominal gain		typ 8.2 V/V	9
Gain error(1) EG	at TA = 25°C; typical ±0.05%	min -0.3 · typ 0.05 · max 0.3 %	9
Gain drift(1) (5) TCEG	AMC1301; typical ±15	min -50 · typ 15 · max 50 ppm/°C	9
Nonlinearity(1)	Typical ±0.01%	min -0.03 · typ 0.01 · max 0.03 %	9
Nonlinearity drift	Typical ±1	typ 1 ppm/°C	9
Total harmonic distortion(3) THD	fIN = 10 kHz	typ -87 dB	9
Output noise	INP = INN = GND1, fIN = 0 Hz, BW = 100 kHz brickwall filter	typ 220 uVRMS	9
Signal-to-noise ratio SNR	fIN = 1 kHz, BW = 10 kHz	min 80 · typ 84 dB	9
Signal-to-noise ratio SNR	fIN = 10 kHz, BW = 100 kHz	typ 71 dB	9
Power-supply rejection ratio(2) PSRR	PSRR vs VDD1, at DC	typ -94 dB	9
Power-supply rejection ratio(2) PSRR	PSRR vs VDD1, 100-mV and 10-kHz ripple	typ -90 dB	9
Power-supply rejection ratio(2) PSRR	PSRR vs VDD2, at DC	typ -100 dB	9
Power-supply rejection ratio(2) PSRR	PSRR vs VDD2, 100-mV and 10-kHz ripple	typ -94 dB	9
Common-mode output voltage VCMout		min 1.39 · typ 1.44 · max 1.49 V	9
Clipping differential output voltage VCLIPout	VOUT = (VOUTP – VOUTN); \|VIN\| = \|VINP – VINN\| > \|VClipping\|; typical ±2.49	min -2.52 · typ 2.49 · max 2.52 V	9
Failsafe differential output voltage VFailsafe	VCM ≥ VCMov, or VDD1 missing	typ -2.563 · max -2.545 V	9
Output bandwidth BW		min 190 · typ 210 kHz	9
Output resistance ROUT	On OUTP or OUTN; typical < 0.2	typ 0.2 Ω	9
Output short-circuit current	On OUTP or OUTN, sourcing or sinking, INN = INP = GND1, outputs shorted to either GND2 or VDD2	typ 13 mA	9
Common-mode transient immunity CMTI	\|GND1 – GND2\| = 1 kV	min 15 kV/us	9
High-side supply current IDD1	3.0 V ≤ VDD1 ≤ 3.6 V	typ 6.3 · max 8.5 mA	10
High-side supply current IDD1	4.5 V ≤ VDD1 ≤ 5.5 V	typ 7.2 · max 9.8 mA	10
Low-side supply current IDD2	3.0 V ≤ VDD2 ≤ 3.6 V	typ 5.3 · max 7.2 mA	10
Low-side supply current IDD2	4.5 V ≤ VDD2 ≤ 5.5 V	typ 5.9 · max 8.1 mA	10
Output signal rise time tr	Over operating ambient temperature range	typ 2 us	10
Output signal fall time tf	Over operating ambient temperature range	typ 2 us	10
VINx to VOUTx signal delay (50% - 10%)	Unfiltered output	typ 0.7 · max 2 us	10
VINx to VOUTx signal delay (50% - 50%)	Unfiltered output	typ 1.6 · max 2.6 us	10
VINx to VOUTx signal delay (50% - 90%)	Unfiltered output	typ 2.5 · max 3 us	10

Pins, by the datasheet

1 VDD1: High-side power supply; see Power Supply Recommendations for decoupling. · p. 4
2 INP: Noninverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. · p. 4
3 INN: Inverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. · p. 4
4 GND1: High-side analog ground. · p. 4
5 GND2: Low-side analog ground. · p. 4
6 OUTN: Inverting analog output. · p. 4
7 OUTP: Noninverting analog output. · p. 4
8 VDD2: Low-side power supply; see Power Supply Recommendations for decoupling. · p. 4

Parameters

-3dB Bandwidth: 210kHz
CMTI(kV/us): 15kV/us
Common Mode Rejection Ratio (CMRR): -93dB
Current - Supply: 12.5mA
Differential Input Voltage: ±250mV
Features: Fault detection
Gain: 8.2
Ib - Input Bias Current: 30uA
Isolation Voltage(Vrms): 5000
Junction Temperature(Max): 150℃
Operating Temperature: -40℃~+125℃
Output Current per Pin(Max): 10mA
Output Type: Differential
Rise Time: 2us
Thermal Resistance(Junction to Ambient): 110.1℃/W
Thermal Resistance(Junction to Board): 66.4℃/W
Thermal Resistance(Junction to Case): 51.7℃/W
Voltage - Supply: 3V~5.5V
Voltage - Supply(Absolute Max): 7V
Voltage - Supply(Input): 3V~5.5V
Voltage - Supply(Output): 3V~5.5V
Vos - Input Offset Voltage: 50uV

Order codes

AMC1301DWVLCSC C1346781

Pinout

The pins of the AMC1301DWV
Pin	Name	Type
1	VDD1	Unspecified
2	VINP	Unspecified
3	VINN	Unspecified
4	GND1	Unspecified
5	GND2	Unspecified
6	VOUTN	Unspecified
7	VOUTP	Unspecified
8	VDD2	Unspecified

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Parts like it

Questions

Is there a KiCad symbol and footprint for the AMC1301DWV?

Yes. The symbol is EasyEDA_Cloud:AMC1200STDUBRQ1 and the footprint Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the AMC1301DWV?

SOIC-8, with 8 pins. Its footprint is drawn on this page.

Where is the AMC1301DWV datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Where can I order the AMC1301DWV?

JLCPCB lists it as part C1346781, with 2 in stock; the sellers' links on this page open their listings.

What can replace the AMC1301DWV?

Parts like it in the library: the AMC1350DWVR by Texas Instruments, the CA-IS1311G by Chipanalog, the ISO224ADWVR by Texas Instruments and the PAI8300E-W5R by 2Pai Semi. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the AMC1301DWV?

14 boards in 9 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

AMC1301DWV

Overview

Symbol

Footprint

From the datasheet

What it is and has

Specifications

Pins, by the datasheet

Open-source boards using it

Power Integrations interface

IGBT board

ENNOID Dual Gate Driver

Rectificador

DC CDI

H750 Base

BatteryManagementUnit

ENNOID Dual Gate Driver

Parts like it

AMC1350DWVR

CA-IS1311G

ISO224ADWVR

PAI8300E-W5R

AMC1411QDWLRQ1

AMC1351DWVR

ACNT-H790-500E

AMC1411DWLR