AMC1350DWVR

Q: Is there a KiCad symbol and footprint for the AMC1350DWVR?

Yes. The symbol is Isolator_Analog:AMC1350DWV and the footprint Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, both drawn on this page. PCBKit places them on a board for you when you design with it.

Q: What package is the AMC1350DWVR?

SOIC-8, with 8 pins. Its footprint is drawn on this page.

Q: Where is the AMC1350DWVR datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Q: Where can I order the AMC1350DWVR?

JLCPCB lists it as part C4990162, with 3,856 in stock; the sellers' links on this page open their listings.

Q: What can replace the AMC1350DWVR?

Parts like it in the library: the CA-IS1311G by Chipanalog, the ISO224ADWVR by Texas Instruments, the PAI8300E-W5R by 2Pai Semi and the AMC1411QDWLRQ1 by Texas Instruments. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Q: Which open-source boards use the AMC1350DWVR?

3 boards in 3 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

Texas Instruments

Isolated ΔΣ (Sigma-Delta) modulator、Fault detection、Full-differential topology SOIC-8 Isolation Amplifiers ROHS

Extended

Datasheetti/AMC1350DWVR

Category: Isolation Amplifiers
Package: SOIC-8
Pins: 8

Overview

The AMC1350DWVR is an isolation Amplifier made by Texas Instruments in a SOIC-8 package with 8 pins. Isolated ΔΣ (Sigma-Delta) modulator、Fault detection、Full-differential topology SOIC-8 Isolation Amplifiers ROHS.

PCBKit's library has its KiCad symbol (Isolator_Analog:AMC1350DWV, from KiCad's library) and its footprint (Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, from KiCad's library), ready for a KiCad board. 3,856 are in stock at JLCPCB (part C4990162). 3 open-source boards in 3 repositories on GitHub use it.

Symbol

Isolator_Analog:AMC1350DWVFrom KiCad's library

Footprint

Package_SO:SOIC-8_3.9x4.9mm_P1.27mmFrom KiCad's library

From the datasheet

Supply, least: 3 V · VDD1, recommended operating min · p. 4
Supply, most: 5.5 V · VDD1, recommended operating max · p. 4
Supply, absolute maximum: 6.5 V · VDD1 to GND1, absolute max · p. 4
Works from: -55 °C · operating ambient min · p. 4
Works up to: 125 °C · operating ambient max · p. 4
Junction, hottest: 150 °C · junction temperature absolute max · p. 4
A pin gives at most: 10 mA · continuous input current, any pin except power-supply pins, absolute max · p. 4
Takes working: 12.3 mA · sum of typical IDD1 at 5 V and IDD2 at 3.3 V · p. 9
Junction to air (DWV (SOIC)): 84.6 K/W · junction-to-ambient thermal resistance · p. 5
Junction to case (DWV (SOIC)): 28.3 K/W · junction-to-case top thermal resistance · p. 5
Junction to board (DWV (SOIC)): 41.1 K/W · junction-to-board thermal resistance · p. 5

What it is and has

Linear input voltage range: ±5 V · p. 1
Input impedance: 1.25 MΩ (typ) · p. 1
Fixed gain: 0.4 V/V · p. 1
Output diagnostics: Fail-safe output · p. 1
Isolation certification: 5000-VRMS isolation for 1 minute per UL1577 · p. 1
Package: SOIC (8), 5.85 mm × 7.50 mm · p. 1

Specifications

Parameter	Conditions	As printed	Page
Power-supply voltage	High-side VDD1 to GND1	min -0.3 · max 6.5 V	4
Power-supply voltage	Low-side VDD2 to GND2	min -0.3 · max 6.5 V	4
Analog input voltage	INP, INN	min -15 · max 15 V	4
Input current	Continuous, any pin except power-supply pins	min -10 · max 10 mA	4
Temperature TJ	Junction	max 150 °C	4
Temperature Tstg	Storage	min -65 · max 150 °C	4
Electrostatic discharge V(ESD)	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001; ±2000 V	max 2000 V	4
Electrostatic discharge V(ESD)	Charged-device model (CDM), per per ANSI/ESDA/JEDEC JS-002; ±1000 V	max 1000 V	4
High-side power-supply VDD1	VDD1 to GND1; typ field represents NOM	min 3 · typ 5 · max 5.5 V	4
Low-side power-supply VDD2	VDD2 to GND2; typ field represents NOM	min 3 · typ 3.3 · max 5.5 V	4
Input voltage before clipping output VClipping	VIN = VINP – VINN; nominal ±6.25 V	typ 6.25 V	4
Specified linear full-scale voltage VFSR	VIN = VINP – VINN	min -5 · max 5 V	4
Operating common-mode input voltage VCM		min -4 · max 4 V	4
Capacitive load CLOAD	On OUTP or OUTN to GND2	max 500 pF	4
Capacitive load CLOAD	OUTP to OUTN	max 250 pF	4
Resistive load RLOAD	On OUTP or OUTN to GND2; values in NOM and MAX columns as printed	typ 10 · max 1 kΩ	4
Operating ambient temperature TA		min -55 · max 125 °C	4
Specified ambient temperature TA		min -40 · max 125 °C	4
Junction-to-ambient thermal resistance RθJA	DWV (SOIC), 8 PINS	typ 84.6 °C/W	5
Junction-to-case (top) thermal resistance RθJC(top)	DWV (SOIC), 8 PINS	typ 28.3 °C/W	5
Junction-to-board thermal resistance RθJB	DWV (SOIC), 8 PINS	typ 41.1 °C/W	5
Junction-to-top characterization parameter ψJT	DWV (SOIC), 8 PINS	typ 4.9 °C/W	5
Junction-to-board characterization parameter ψJB	DWV (SOIC), 8 PINS	typ 39.1 °C/W	5
Maximum power dissipation (both sides) PD	VDD1 = VDD2 = 5.5 V	max 96 mW	5
Maximum power dissipation (high-side) PD1	VDD1 = 3.6 V	max 29 mW	5
Maximum power dissipation (high-side) PD1	VDD1 = 5.5 V	max 51 mW	5
Maximum power dissipation (low-side) PD2	VDD2 = 3.6 V	max 26 mW	5
Maximum power dissipation (low-side) PD2	VDD2 = 5.5 V	max 45 mW	5
External clearance CLR	Shortest pin-to-pin distance through air; ≥ 8.5 mm	min 8.5 mm	6
External creepage CPG	Shortest pin-to-pin distance across the package surface; ≥ 8.5 mm	min 8.5 mm	6
Distance through insulation DTI	Minimum internal gap (internal clearance) of the double insulation; ≥ 0.021 mm	min 0.021 mm	6
Comparative tracking index CTI	DIN EN 60112 (VDE 0303-11); IEC 60112; ≥ 600 V	min 600 V	6
Maximum repetitive peak isolation voltage VIORM	At AC voltage	max 2120 VPK	6
Maximum-rated isolation working voltage VIOWM	At AC voltage (sine wave)	max 1500 VRMS	6
Maximum-rated isolation working voltage VIOWM	At DC voltage	max 2120 VDC	6
Maximum transient isolation voltage VIOTM	VTEST = VIOTM, t = 60 s (qualification test)	max 7070 VPK	6
Maximum transient isolation voltage VIOTM	VTEST = 1.2 × VIOTM, t = 1 s (100% production test)	max 8480 VPK	6
Maximum surge isolation voltage VIOSM	Test method per IEC 60065, 1.2/50-us waveform, VTEST = 1.6 × VIOSM = 12800 VPK (qualification)	max 8000 VPK	6
Apparent charge qpd	Method a, after input/output safety test subgroups 2 and 3; Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 × VIORM, tm = 10 s; ≤5 pC	max 5 pC	6
Apparent charge qpd	Method a, after environmental tests subgroup 1; Vini = VIOTM, tini = 60 s, Vpd(m) = 1.6 × VIORM, tm = 10 s; ≤5 pC	max 5 pC	6
Apparent charge qpd	Method b1, at routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 1 s, Vpd(m) = 1.875 × VIORM, tm = 1 s; ≤5 pC	max 5 pC	6
Barrier capacitance, input to output CIO	VIO = 0.5 VPP at 1 MHz; ~1.5 pF	typ 1.5 pF	6
Pollution degree		typ 2	6
Withstand isolation voltage VISO	UL1577; VTEST = VISO = 5000 VRMS or 7071 VDC, t = 60 s (qualification); VTEST = 1.2 × VISO = 6000 VRMS, t = 1 s (100% production test)	max 5000 VRMS	6
Safety input, output, or supply current IS	RθJA = 84.6°C/W, VDDx = 5.5 V, TJ = 150°C, TA = 25°C	max 270 mA	7
Safety input, output, or supply current IS	RθJA = 84.6°C/W, VDDx = 3.6 V, TJ = 150°C, TA = 25°C	max 410 mA	7
Safety input, output, or total power PS	RθJA = 84.6°C/W, TJ = 150°C, TA = 25°C	max 1480 mW	7
Maximum safety temperature TS		max 150 °C	7
Offset voltage VOS	TA = 25°C, INN = INP = GND1, 4.5 V ≤ VDD1 ≤ 5.5 V; typical ±0.3 mV	min -1.5 · typ 0.3 · max 1.5 mV	8
Offset voltage VOS	TA = 25°C, INN = INP = GND1, 3.0 V ≤ VDD1 ≤ 5.5 V; typical at VDD1 = 3.3 V	min -2.5 · typ -0.8 · max 2.5 mV	8
Offset voltage long-term stability ΔVOS	10 years at TA = 55℃; below measurement capability	typ 0 mV	8
Offset voltage thermal drift TCVOS	INN = INP = GND1; typical ±3 uV/°C	min -15 · typ 3 · max 15 uV/°C	8
Offset voltage thermal drift long-term stability ΔTCVOS	10 years at TA = 55℃, INN = INP = GND1; below measurement capability	typ 0 mV/°C	8
Input resistance, differential RIN		min 2 · typ 2.5 · max 3 MΩ	8
Input resistance, single ended RIN	INN = GND1	min 1 · typ 1.25 · max 1.5 MΩ	8
Input resistance long-term stability ΔRIN	10 years at TA = 55℃; below measurement capability	typ 0 ppm	8
Input resistance thermal drift TCRIN	–40℃ ≤ TA ≤ 85℃	typ 5 ppm/°C	8
Single-ended input capacitance CIN	INN = HGND, fIN = 275 kHz	typ 4 pF	8
Differential input capacitance CIND	fIN = 275 kHz	typ 2 pF	8
Nominal gain		typ 0.4 V/V	8
Gain error EG	TA = 25℃; typical ±0.05%	min -0.2 · typ 0.05 · max 0.2 %	8
Gain error long-term stability ΔEG	10 years at TA = 55℃; below measurement capability	typ 0	8
Gain error thermal drift TCEG	Typical ±10 ppm/°C	min -35 · typ 10 · max 35 ppm/°C	8
Gain error thermal drift long-term stability ΔTCEG	10 years at TA = 55℃; below measurement capability	typ 0 ppm/°C	8
Nonlineartity	Typical ±0.003%	min -0.02 · typ 0.003 · max 0.02 %	8
Nonlinearity thermal drift		typ 0.2 ppm/°C	8
Total harmonic distortion THD	VIN = 10 VPP, fIN = 10 kHz, BW = 100 kHz	typ -87 dB	8
Signal-to-noise ratio SNR	VIN = 10 VPP, fIN = 1 kHz, BW = 10 kHz	min 81 · typ 85 dB	8
Signal-to-noise ratio SNR	VIN = 10 VPP, fIN = 10 kHz, BW = 100 kHz	typ 75 dB	8
Output noise	INN = INP = GND1, BW = 100 kHz	typ 250 uVrms	8
Common-mode rejection ratio CMRR	DC, INN = INP, VCM min ≤ VCM ≤ VCM max	typ -72 dB	8
Common-mode rejection ratio CMRR	fIN = 10 kHz, INN = INP = 10 VPP	typ -71 dB	8
Power-supply rejection ratio PSRR	PSRR vs VDD1, DC; input referred	typ -67 dB	8
Power-supply rejection ratio PSRR	PSRR vs VDD2, DC; input referred	typ -80 dB	8
Power-supply rejection ratio PSRR	PSRR vs VDD1 with 10-kHz, 100-mV ripple; input referred	typ -65 dB	8
Power-supply rejection ratio PSRR	PSRR vs VDD2 with 10-kHz, 100-mV ripple; input referred	typ -64 dB	8
Output common-mode voltage VCMout		min 1.39 · typ 1.44 · max 1.49 V	8
Clipping differential output voltage VCLIPout	VOUT = (VOUTP – VOUTN), VIN > VClipping	typ 2.49 V	8
Fail-safe differential output voltage VFail-safe	VDD1 undervoltage or VDD1 missing	typ -2.57 · max -2.5 V	8
Output bandwidth BW		min 275 · typ 300 kHz	8
Output resistance ROUT	On OUTP or OUTN; typical < 0.2 Ω	typ 0.2 Ω	8
Output short-circuit current	On OUTP or OUTN, sourcing or sinking, INN = INP = GND1, outputs shorted to either GND or VDD2	typ 14 mA	9
Common-mode transient immunity CMTI		min 100 · typ 150 kV/us	9
VDD1 undervoltage detection threshold VDD1UV	VDD1 rising	min 2.5 · typ 2.7 · max 2.9 V	9
VDD1 undervoltage detection threshold VDD1UV	VDD1 falling	min 2.4 · typ 2.6 · max 2.8 V	9
VDD2 undervoltage detection threshold VDD2UV	VDD2 rising	min 2.2 · typ 2.45 · max 2.65 V	9
VDD2 undervoltage detection threshold VDD2UV	VDD2 falling	min 1.85 · typ 2 · max 2.2 V	9
High-side supply current IDD1	3.0 V < VDD1 < 3.6 V	typ 6 · max 8.1 mA	9
High-side supply current IDD1	4.5 V < VDD1 < 5.5 V	typ 7 · max 9.3 mA	9
Low-side supply current IDD2	3.0 V < VDD2 < 3.6 V	typ 5.3 · max 7.2 mA	9
Low-side supply current IDD2	4.5 V < VDD2 < 5.5 V	typ 5.9 · max 8.1 mA	9

Pins, by the datasheet

1 VDD1: High-side power supply. · p. 3
2 INP: Noninverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. · p. 3
3 INN: Inverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. · p. 3
4 GND1: High-side analog ground. · p. 3
5 GND2: Low-side analog ground. · p. 3
6 OUTN: Inverting analog output. · p. 3
7 OUTP: Noninverting analog output. · p. 3
8 VDD2: Low-side power supply. · p. 3

Parameters

-3dB Bandwidth: 300kHz
CMTI(kV/us): 150kV/us
Common Mode Rejection Ratio (CMRR): -72dB
Current - Supply: 12.3mA
Differential Input Voltage: ±5V
Features: Full-differential topology
Gain: 0.4
Isolation Voltage(Vrms): 5000
Junction Temperature(Max): 150℃
Operating Temperature: -55℃~+125℃
Output Current per Pin(Max): 10mA
Output Type: Differential
Thermal Resistance(Junction to Ambient): 84.6℃/W
Thermal Resistance(Junction to Board): 41.1℃/W
Thermal Resistance(Junction to Case): 28.3℃/W
Voltage - Supply: 3V~5.5V
Voltage - Supply(Absolute Max): 6.5V
Voltage - Supply(Input): 3V~5.5V
Voltage - Supply(Output): 3V~5.5V
Vos - Input Offset Voltage: 300uV

Order codes

AMC1350DWVRLCSC C4990162

Pinout

The pins of the AMC1350DWVR
Pin	Name	Type
1	VDD1	Power in
2	IN+	Input
3	IN-	Input
4	GND1	Power in
5	GND2	Power in
6	OUT-	Output
7	OUT+	Output
8	VDD2	Power in

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All 3

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Questions

Is there a KiCad symbol and footprint for the AMC1350DWVR?

Yes. The symbol is Isolator_Analog:AMC1350DWV and the footprint Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the AMC1350DWVR?

SOIC-8, with 8 pins. Its footprint is drawn on this page.

Where is the AMC1350DWVR datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Where can I order the AMC1350DWVR?

JLCPCB lists it as part C4990162, with 3,856 in stock; the sellers' links on this page open their listings.

What can replace the AMC1350DWVR?

Parts like it in the library: the CA-IS1311G by Chipanalog, the ISO224ADWVR by Texas Instruments, the PAI8300E-W5R by 2Pai Semi and the AMC1411QDWLRQ1 by Texas Instruments. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the AMC1350DWVR?

3 boards in 3 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

AMC1350DWVR

Overview

Symbol

Footprint

From the datasheet

What it is and has

Specifications

Pins, by the datasheet

Parameters

Order codes

Pinout

Open-source boards using it

ActivePrecharge RevB

INV Boost Iso

Full bridge CSI

Show this part on your page

Questions

Is there a KiCad symbol and footprint for the AMC1350DWVR?

What package is the AMC1350DWVR?

Where is the AMC1350DWVR datasheet?

Where can I order the AMC1350DWVR?

What can replace the AMC1350DWVR?

Which open-source boards use the AMC1350DWVR?

Parts like it

CA-IS1311G

ISO224ADWVR

PAI8300E-W5R

AMC1411QDWLRQ1

AMC1351DWVR

ACNT-H790-500E

AMC1411DWLR

ISO224ADWV