4 layers97.1 × 26 mm
Overview
The 2N7002 is a MOSFET made by Jiangsu Changjing Electronics Technology (CJ) in a SOT-23 package with 3 pins. 1 N-channel 115mA 2.5V 225mW 25pF 50pF 5pF 5Ω@10V 60V N-Channel ±20V SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Transistor_FET:2N7002, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 3,850,460 are in stock at JLCPCB (part C8545). 10 open-source boards in 6 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
9- Drain-source, most
- 60 V · Drain-source voltage, absolute max · p. 1
- Gate-source, most
- 20 V · Gate-source voltage magnitude, absolute max ±20 V · p. 1
- Drain current, most
- 115 mA · Continuous drain current at Ta = 25 ℃, max · p. 1
- Junction, hottest
- 150 °C · Junction temperature, absolute max · p. 1
- Junction to air (SOT-23)
- 556 K/W · Junction-to-ambient thermal resistance · p. 1
- Gate threshold
- 1.6 V · Gate threshold at VDS = VGS, ID = 250 uA, typical · p. 2
- On resistance
- 5 Ω · VGS = 10 V, ID = 500 mA, max · p. 2
- On resistance
- 7 Ω · VGS = 5 V, ID = 50 mA, max · p. 2
- Forward voltage
- 1.2 V · Body diode at IS = 115 mA, VGS = 0 V, max · p. 2
What it is and has
4- Channel
- N-Channel · p. 1
- Cell design
- High density cell design for low RDS(ON) · p. 1
- Switch
- Voltage controlled small signal switch · p. 1
- Current capability
- High saturation current capability · p. 1
Specifications
23| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDS | Ta=25℃ | max 60 V | 1 |
| Gate-Source Voltage VGS | Ta=25℃; ±20 V limit | min -20 · max 20 V | 1 |
| Continuous Drain Current ID | Ta=25℃ | max 0.115 A | 1 |
| Power Dissipation PD | Ta=25℃ | max 0.225 W | 1 |
| Thermal Resistance from Junction to Ambient RθJA | SOT-23; Ta=25℃ | max 556 ℃/W | 1 |
| Junction Temperature TJ | max 150 ℃ | 1 | |
| Storage Temperature Tstg | min -50 · max 150 ℃ | 1 | |
| Drain-Source Breakdown Voltage V(BR)DSS | Ta=25 ℃; VGS=0 V, ID=250 uA | min 60 V | 2 |
| Gate-Threshold Voltage Vth(GS) | Ta=25 ℃; VDS=VGS, ID=250 uA | min 1 · typ 1.6 · max 2.5 V | 2 |
| Gate-body Leakage lGSS | Ta=25 ℃; VDS=0 V, VGS=±20 V; maximum leakage specified as ±80 nA | max 80 nA | 2 |
| Zero Gate Voltage Drain Current IDSS | Ta=25 ℃; VDS=60 V, VGS=0 V | max 80 nA | 2 |
| On-state Drain Current ID(ON) | Ta=25 ℃; VGS=10 V, VDS=7 V | min 500 mA | 2 |
| Drain-Source On-Resistance RDS(on) | Ta=25 ℃; VGS=10 V, ID=500mA | typ 0.9 · max 5 Ω | 2 |
| Drain-Source On-Resistance RDS(on) | Ta=25 ℃; VGS=5 V, ID=50mA | typ 1.1 · max 7 Ω | 2 |
| Forward Trans conductance gfs | Ta=25 ℃; VDS=10 V, ID=200mA | min 80 ms | 2 |
| Drain-source on-voltage VDS(on) | Ta=25 ℃; VGS=10V, ID=500mA | min 0.5 · max 3.75 V | 2 |
| Drain-source on-voltage VDS(on) | Ta=25 ℃; VGS=5V, ID=50mA | min 0.05 · max 0.375 V | 2 |
| Diode Forward Voltage VSD | Ta=25 ℃; IS=115mA, VGS=0 V | min 0.55 · max 1.2 V | 2 |
| Input Capacitance * Ciss | Ta=25 ℃; VDS=25V, VGS=0V, f=1MHz | max 50 pF | 2 |
| Output Capacitance * Coss | Ta=25 ℃; VDS=25V, VGS=0V, f=1MHz | max 25 pF | 2 |
| Reverse Transfer Capacitance * Crss | Ta=25 ℃; VDS=25V, VGS=0V, f=1MHz | max 5 pF | 2 |
| Turn-on Time * td(on) | Ta=25 ℃; VDD=25 V, RL=50Ω, ID=500mA,VGEN=10 V, RG=25Ω | max 20 ns | 2 |
| Turn-off Time * td(off) | Ta=25 ℃; VDD=25 V, RL=50Ω, ID=500mA,VGEN=10 V, RG=25Ω | max 40 ns | 2 |
Pins, by the datasheet
3- 1 GATE
- Gate. · p. 1
- 2 SOURCE
- Source. · p. 1
- 3 DRAIN
- Drain. · p. 1
Parameters
16- Current - Continuous Drain(Id)
- 115mA
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 7.5Ω@10V,500mA
- Drain to Source Voltage
- 60V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Gate Threshold Voltage (Vgs(th)@Id)
- 2.5V@250μA
- Input Capacitance(Ciss)
- 50pF
- Junction Temperature(Max)
- 150℃
- Number
- 1 N-channel
- Output Capacitance(Coss)
- 25pF
- Pd - Power Dissipation
- 225mW
- RDS(on)
- 5Ω@10V
- Reverse Transfer Capacitance (Crss@Vds)
- 5pF
- Thermal Resistance(Junction to Ambient)
- 556℃/W
- Type
- N-Channel
- Vgs
- ±20V
- Voltage - Forward(Vf)
- 1.2V
Order codes
2- 2N7002LCSC C164913
- 2N7002LCSC C8545
Pinout
3| Pin | Name | Type |
|---|---|---|
| 1 | G | Input |
| 2 | S | Passive |
| 3 | D | Passive |
Open-source boards using it
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The separate vNext PCB skill and orchestrator package is available alongside the reference workflow below; existing projects keep their accepted toolchain until an explicit migration.
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The separate vNext PCB skill and orchestrator package is available alongside the reference workflow below; existing projects keep their accepted toolchain until an explicit migration.
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Show this part on your page
<iframe src="https://pcbkit.io/embed/parts/cj/2N7002" title="2N7002 in PCBKit" width="100%" height="480" style="border:0;border-radius:12px" allow="fullscreen" loading="lazy"></iframe><img src="https://pcbkit.io/embed/parts/cj/2N7002.jpg" alt="2N7002" width="1200" height="900">[](https://pcbkit.io/parts/cj/2N7002)Questions
Is there a KiCad symbol and footprint for the 2N7002?
Yes. The symbol is Transistor_FET:2N7002 and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the 2N7002?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the 2N7002 datasheet?
Jiangsu Changjing Electronics Technology (CJ) publishes it: the Datasheet link on this page opens it.
Where can I order the 2N7002?
JLCPCB lists it as part C8545, with 3,850,460 in stock; the sellers' links on this page open their listings.
What can replace the 2N7002?
Parts like it in the library: the 2N7002K by MDD, the 2N7002K by hongjiacheng, the 2N7002 by hongjiacheng and the L2N7002LT1G by Leshan Radio (LRC). Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the 2N7002?
10 boards in 6 repositories on GitHub; the most starred are listed on this page, with their KiCad files.
Parts like it
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