Overview
The 2N7002K is a MOSFET made by MDD in a SOT-23 package with 3 pins. -40℃~+150℃ 1 N-channel 1.5V 1.9Ω@10V 21pF 300mA 300mW 4pF 60V 9pF SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Transistor_FET:2N7002K, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 2,433,690 are in stock at JLCPCB (part C414015).
Symbol
Footprint
From the datasheet
11- Drain-source, most
- 60 V · Drain-source voltage, absolute max · p. 1
- Gate-source, most
- 20 V · Gate-source voltage magnitude, absolute max ±20 V · p. 1
- Drain current, most
- 300 mA · Continuous drain current, max at TA = 25 °C · p. 1
- Junction, hottest
- 150 °C · Junction temperature, absolute max · p. 1
- Junction to air (SOT-23)
- 416 K/W · Junction to ambient on 1 in2 FR-4 board with 2oz copper, double sided, still air · p. 1
- Gate threshold
- 1.5 V · Gate threshold, typical at VDS = VGS, ID = 250 uA · p. 2
- On resistance
- 2.5 Ω · On-state resistance, max at VGS = 10 V, ID = 300 mA · p. 2
- On resistance
- 3 Ω · On-state resistance, max at VGS = 4.5 V, ID = 200 mA · p. 2
- Forward current, most
- 300 mA · Body diode continuous current, max at TA = 25 °C · p. 2
- Forward voltage
- 1.2 V · Body diode forward voltage, max at IS = 300 mA, VGS = 0 V · p. 2
- Edge
- 19 ns · Turn on rise time, typical at VDS = 30 V, VGS = 10 V, ID = 300 mA, RG = 6 Ω · p. 2
What it is and has
6- Technology
- Trench Power MV MOSFET · p. 1
- Switch
- Voltage controlled small signal switch · p. 1
- Input capacitance
- Low · p. 1
- Switching speed
- Fast · p. 1
- Leakage
- Low input/output leakage · p. 1
- ESD protection
- Up to 2KV (HBM) · p. 1
Specifications
25| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDS | TA=25℃ | max 60 V | 1 |
| Gate-Source Voltage VGS | TA=25℃; ±20 V limit | min -20 · max 20 V | 1 |
| Continuous Drain Current ID | TA=25℃ | max 300 mA | 1 |
| Pulsed Drain Current (Note 1) IDM | TA=25℃; pulse width limited by maximum allowable junction temperature | max 1.5 A | 1 |
| Power Dissipation(Note 2) PD | TA=25℃; mounted on 1 in2 FR-4 board with 2oz copper, double sided, still air | max 300 mW | 1 |
| Thermal Resistance from Junction to Ambient(Note 2) RθJA | SOT-23; TA=25℃; mounted on 1 in2 FR-4 board with 2oz copper, double sided, still air | max 416 ℃/W | 1 |
| Junction Temperature and Storage Temperature TJ,Tstg | min -50 · max 150 ℃ | 1 | |
| Drain-Source Breakdown Voltage V(BR)DSS | Ta = 25℃; VGS=0V, ID=250uA | min 60 V | 2 |
| Drain-Source Leakage Current IDSS | Ta = 25℃; VDS=60V, VGS=0V | max 1 uA | 2 |
| Gate-Source Leakage Current IGSS | Ta = 25℃; VGS=±20V, VDS=0V; maximum is ±10 uA | max 10 uA | 2 |
| Gate Threshold Voltage VGS(TH) | Ta = 25℃; VDS=VGS, ID=250uA | min 1 · typ 1.5 · max 2.5 V | 2 |
| Drain-Source On-State Resistance(Note 3) RDS(ON) | Ta = 25℃; VGS=10V, ID=300mA; pulse width≤300us, duty cycle≤2% | typ 1.9 · max 2.5 Ω | 2 |
| Drain-Source On-State Resistance(Note 3) RDS(ON) | Ta = 25℃; VGS=4.5V, ID=200mA; pulse width≤300us, duty cycle≤2% | typ 2 · max 3 Ω | 2 |
| Input Capacitance Ciss | Ta = 25℃; VDS=30V, VGS=0V, f=1MHz | typ 21 pF | 2 |
| Output Capacitance Coss | Ta = 25℃; VDS=30V, VGS=0V, f=1MHz | typ 9 pF | 2 |
| Reverse Transfer Capacitance Crss | Ta = 25℃; VDS=30V, VGS=0V, f=1MHz | typ 4 pF | 2 |
| Total Gate Charge Qg | Ta = 25℃; VDS=30V, VGS=10V, ID=0.3A | typ 1.22 · max 2.4 nC | 2 |
| Gate Source Charge Qgs | Ta = 25℃; VDS=30V, VGS=10V, ID=0.3A | typ 0.5 nC | 2 |
| Gate Drain Charge Qgd | Ta = 25℃; VDS=30V, VGS=10V, ID=0.3A | typ 0.18 nC | 2 |
| Turn on Delay Time td(on) | Ta = 25℃; VDS=30V, VGS =10V, ID=300mA, RG=6Ω | typ 7 ns | 2 |
| Turn on Rise Time tr | Ta = 25℃; VDS=30V, VGS =10V, ID=300mA, RG=6Ω | typ 19 ns | 2 |
| Turn Off Delay Time td(off) | Ta = 25℃; VDS=30V, VGS =10V, ID=300mA, RG=6Ω | typ 20 ns | 2 |
| Turn Off Fall Time tf | Ta = 25℃; VDS=30V, VGS =10V, ID=300mA, RG=6Ω | typ 84 ns | 2 |
| Source drain current(Body Diode) ISD | TA=25℃ | max 300 mA | 2 |
| Drain-Source Diode Forward Voltage VSD | Ta = 25℃; IS=300mA, VGS=0V | max 1.2 V | 2 |
Pins, by the datasheet
3- 1 Gate
- Gate. · p. 1
- 2 Source
- Source. · p. 1
- 3 Drain
- Drain. · p. 1
Parts like it
8
2N7002K
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SOT-23-55℃~+150℃ 1 N-channel 190mA、300mA 2.1V 20pF 265mW、1.33W 4.5Ω@10V 430pC@4.5V 60V SOT-23 MOSFETs ROHSNexperiaMOSFETs
Questions
Is there a KiCad symbol and footprint for the 2N7002K?
Yes. The symbol is Transistor_FET:2N7002K and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the 2N7002K?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the 2N7002K datasheet?
MDD publishes it: the Datasheet link on this page opens it.
Where can I order the 2N7002K?
JLCPCB lists it as part C414015, with 2,433,690 in stock; the sellers' links on this page open their listings.
What can replace the 2N7002K?
Parts like it in the library: the 2N7002K by hongjiacheng, the 2N7002K by Diodes Incorporated, the BSS138P by Nexperia and the BSS138K by ElecSuper. Check their datasheets: a part that fits the footprint may still differ in its ratings.