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TLV271IDBV, in 3D

TLV271IDBV

Texas Instruments

-40℃~+125℃ -8V~8V 1 1pA 1pA 2.4V/us 2.7V~16V 2uV/℃ 39nV/√Hz@1kHz 3MHz 500uV 550uA 70dB 7mA Rail-to-rail output SOT-23-5 Operational Amplifier ROHS

Extended
DatasheetJLCPCBLCSCti/TLV271IDBV
Category
Operational Amplifier
Package
SOT-23-5
Pins
5

Overview

The TLV271IDBV is an operational Amplifier made by Texas Instruments in a SOT-23-5 package with 5 pins. -40℃~+125℃ -8V~8V 1 1pA 1pA 2.4V/us 2.7V~16V 2uV/℃ 39nV/√Hz@1kHz 3MHz 500uV 550uA 70dB 7mA Rail-to-rail output SOT-23-5 Operational Amplifier ROHS.

PCBKit's library has its KiCad symbol (Operational Amplifiers:TLV271IDBV [alt], from CERN's library) and its footprint (Package_TO_SOT_SMD:SOT-23-5, from KiCad's library), ready for a KiCad board. 1,021 are in stock at JLCPCB (part C181500).

Symbol

VDDGND34521
Operational Amplifiers:TLV271IDBV [alt]From CERN's library

Footprint

12345
Package_TO_SOT_SMD:SOT-23-5From KiCad's library

From the datasheet

12
Supply, least
2.7 V · VDD, single-supply recommended operating min · p. 6
Supply, most
16 V · VDD, single-supply recommended operating max · p. 6
Supply, absolute maximum
16.5 V · VDD, absolute max · p. 6
Works from
-40 °C · I-suffix operating free-air min · p. 6
Works up to
125 °C · I-suffix operating free-air max · p. 6
Junction, hottest
150 °C · Junction absolute max · p. 6
A pin gives at most
100 mA · Output source or sink absolute max · p. 6
Takes working
550 µA · VDD = 5 V, VO = VDD/2, 25°C typical · p. 10
Takes at most
1 mA · VDD = 10 V, VO = VDD/2, full temperature range max · p. 10
Junction to air (DBV)
221.7 K/W · Junction-to-ambient thermal resistance · p. 7
Junction to board (DBV)
49.7 K/W · Junction-to-board thermal resistance · p. 7
Junction to case (DBV)
144.7 K/W · Junction-to-case top thermal resistance · p. 7

What it is and has

7
Output
Rail-to-rail · p. 1
Bandwidth
3 MHz · p. 1
Slew rate
2.4 V/µs · p. 1
Input noise voltage
39 nV/√Hz · p. 1
Input bias current
1 pA · p. 1
Package
5-pin SOT-23 · p. 1
Supply current
550 µA/Channel · p. 1

Around it

2
cap 6.8 µF
between each supply terminal and ground; Tantalum, in parallel with a 0.1-uF ceramic capacitor; may be shared among amplifiers depending on the application. · p. 21
cap 0.1 µF
between each supply terminal and ground; Ceramic, at every amplifier supply terminal, placed as close as possible; strive for less than 0.1 inches. · p. 21

Specifications

95
ParameterConditionsAs printedPage
Supply VDDOver operating free-air temperature rangemax 16.5 V6
Input VIMaximum: VDD + 0.2 V; over operating free-air temperature rangemin -0.2 V6
Input IIOver operating free-air temperature rangemin -10 · max 10 mA6
Output IOOver operating free-air temperature rangemin -100 · max 100 mA6
Operating TAI-suffixmin -40 · max 125 °C6
Junction TJmax 150 °C6
Storage Tstgmin -65 · max 150 °C6
Supply voltage VDDSingle-supplymin 2.7 · max 16 V6
Common-mode input voltage VICRMaximum: VDD −1.35 Vmin 0 V6
Operating free-air temperature TAI-suffixmin -40 · max 125 °C6
Junction-to-ambient thermal resistance RθJATLV271, DBV (SOT-23), 5 pinstyp 221.7 °C/W7
Junction-to-case (top) thermal resistance RθJC(top)TLV271, DBV (SOT-23), 5 pinstyp 144.7 °C/W7
Junction-to-board thermal resistance RθJBTLV271, DBV (SOT-23), 5 pinstyp 49.7 °C/W7
Junction-to-top characterization parameter ψJTTLV271, DBV (SOT-23), 5 pinstyp 26.1 °C/W7
Junction-to-board characterization parameter ψJBTLV271, DBV (SOT-23), 5 pinstyp 49 °C/W7
Input offset voltage VIOVDD = 2.7 V, 5 V, and ±5 V; VIC = VDD/2, RL = 10 kΩ, VO = VDD/2, RS = 50 Ω; TA = 25°Ctyp 0.5 · max 5 mV8
Input offset voltage VIOVDD = 2.7 V, 5 V, and ±5 V; VIC = VDD/2, RL = 10 kΩ, VO = VDD/2, RS = 50 Ω; full range, –40°C to 125°Cmax 7 mV8
Offset voltage drift αVIOVDD = 2.7 V, 5 V, and ±5 V; VIC = VDD/2, RL = 10 kΩ, VO = VDD/2, RS = 50 Ω; TA = 25°Ctyp 2 uV/°C8
Common-mode rejection ratio CMRRVDD = 2.7 V; VIC = 0 to VDD − 1.35 V, RS = 50 Ω; TA = 25°Cmin 58 · typ 70 dB8
Common-mode rejection ratio CMRRVDD = 2.7 V; VIC = 0 to VDD − 1.35 V, RS = 50 Ω; full range, –40°C to 125°Cmin 55 dB8
Common-mode rejection ratio CMRRVDD = 5 V; VIC = 0 to VDD − 1.35 V, RS = 50 Ω; TA = 25°Cmin 65 · typ 80 dB8
Common-mode rejection ratio CMRRVDD = 5 V; VIC = 0 to VDD − 1.35 V, RS = 50 Ω; full range, –40°C to 125°Cmin 62 dB8
Common-mode rejection ratio CMRRVDD = ±5 V; VIC = –5 V to VDD − 1.35 V, RS = 50 Ω; TA = 25°Cmin 69 · typ 85 dB8
Common-mode rejection ratio CMRRVDD = ±5 V; VIC = –5 V to VDD − 1.35 V, RS = 50 Ω; full range, –40°C to 125°Cmin 66 dB8
Large-signal differential voltage amplification AVDVDD = 2.7 V; VO(PP) = VDD/2, RL = 10 kΩ; TA = 25°Cmin 97 · typ 106 dB8
Large-signal differential voltage amplification AVDVDD = 2.7 V; VO(PP) = VDD/2, RL = 10 kΩ; full range, –40°C to 125°Cmin 76 dB8
Large-signal differential voltage amplification AVDVDD = 5 V; VO(PP) = VDD/2, RL = 10 kΩ; TA = 25°Cmin 100 · typ 110 dB8
Large-signal differential voltage amplification AVDVDD = 5 V; VO(PP) = VDD/2, RL = 10 kΩ; full range, –40°C to 125°Cmin 86 dB8
Large-signal differential voltage amplification AVDVDD = ±5 V; VO(PP) = VDD/2, RL = 10 kΩ; TA = 25°Cmin 100 · typ 115 dB8
Large-signal differential voltage amplification AVDVDD = ±5 V; VO(PP) = VDD/2, RL = 10 kΩ; full range, –40°C to 125°Cmin 90 dB8
Input offset current IIOVDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 Ω; TA = 25°Ctyp 1 · max 60 pA8
Input offset current IIOVDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 Ω; TA = 70°Cmax 100 pA8
Input offset current IIOVDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 Ω; TA = 125°Cmax 1000 pA8
Input bias current IIBVDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 Ω; TA = 25°Ctyp 1 · max 60 pA8
Input bias current IIBVDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 Ω; TA = 70°Cmax 100 pA8
Input bias current IIBVDD = 5 V, VIC = VDD/2, VO = VDD/2, RS = 50 Ω; TA = 125°Cmax 1000 pA8
Differential input resistance ri(d)VDD = 2.7 V, 5 V, and ±5 V; TA = 25°Ctyp 1000 GΩ8
Common-mode input capacitance CICVDD = 2.7 V, 5 V, and ±5 V; f = 21 kHz; TA = 25°Ctyp 8 pF8
High-level output voltage VOHVIC = VDD/2, IOH = –1 mA, VDD = 2.7 V; TA = 25°Cmin 2.55 · typ 2.58 V9
High-level output voltage VOHVIC = VDD/2, IOH = –1 mA, VDD = 2.7 V; full range, –40°C to 125°Cmin 2.48 V9
High-level output voltage VOHVIC = VDD/2, IOH = –1 mA, VDD = 5 V; TA = 25°Cmin 4.9 · typ 4.93 V9
High-level output voltage VOHVIC = VDD/2, IOH = –1 mA, VDD = 5 V; full range, –40°C to 125°Cmin 4.85 V9
High-level output voltage VOHVIC = VDD/2, IOH = –1 mA, VDD = ±5 V; TA = 25°Cmin 4.92 · typ 4.96 V9
High-level output voltage VOHVIC = VDD/2, IOH = –1 mA, VDD = ±5 V; full range, –40°C to 125°Cmin 4.9 V9
High-level output voltage VOHVIC = VDD/2, IOH = –5 mA, VDD = 2.7 V; TA = 25°Cmin 1.9 · typ 2.1 V9
High-level output voltage VOHVIC = VDD/2, IOH = –5 mA, VDD = 2.7 V; full range, –40°C to 125°Cmin 1.5 V9
High-level output voltage VOHVIC = VDD/2, IOH = –5 mA, VDD = 5 V; TA = 25°Cmin 4.6 · typ 4.68 V9
High-level output voltage VOHVIC = VDD/2, IOH = –5 mA, VDD = 5 V; full range, –40°C to 125°Cmin 4.5 V9
High-level output voltage VOHVIC = VDD/2, IOH = –5 mA, VDD = ±5 V; TA = 25°Cmin 4.7 · typ 4.84 V9
High-level output voltage VOHVIC = VDD/2, IOH = –5 mA, VDD = ±5 V; full range, –40°C to 125°Cmin 4.65 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 1 mA, VDD = 2.7 V; TA = 25°Ctyp 0.1 · max 0.15 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 1 mA, VDD = 2.7 V; full range, –40°C to 125°Cmax 0.22 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 1 mA, VDD = 5 V; TA = 25°Ctyp 0.05 · max 0.1 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 1 mA, VDD = 5 V; full range, –40°C to 125°Cmax 0.15 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 1 mA, VDD = ±5 V; TA = 25°Ctyp -4.95 · max -4.92 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 1 mA, VDD = ±5 V; full range, –40°C to 125°Cmax -4.9 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 5 mA, VDD = 2.7 V; TA = 25°Ctyp 0.5 · max 0.7 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 5 mA, VDD = 2.7 V; full range, –40°C to 125°Cmax 1.1 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 5 mA, VDD = 5 V; TA = 25°Ctyp 0.28 · max 0.4 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 5 mA, VDD = 5 V; full range, –40°C to 125°Cmax 0.5 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 5 mA, VDD = ±5 V; TA = 25°Ctyp -4.84 · max -4.7 V9
Low-level output voltage VOLVIC = VDD/2, IOH = 5 mA, VDD = ±5 V; full range, –40°C to 125°Cmax -4.65 V9
Output current IOVO = 0.5 V from rail, VDD = 2.7 V; positive rail; TA = 25°Ctyp 4 mA9
Output current IOVO = 0.5 V from rail, VDD = 2.7 V; negative rail; TA = 25°Ctyp 5 mA9
Output current IOVO = 0.5 V from rail, VDD = 5 V; positive rail; TA = 25°Ctyp 7 mA9
Output current IOVO = 0.5 V from rail, VDD = 5 V; negative rail; TA = 25°Ctyp 8 mA9
Output current IOVO = 0.5 V from rail, VDD = 10 V; positive rail; TA = 25°Ctyp 13 mA9
Output current IOVO = 0.5 V from rail, VDD = 10 V; negative rail; TA = 25°Ctyp 12 mA9
Supply current (per channel) IDDVO = VDD/2, VDD = 2.7 V; TA = 25°Ctyp 470 · max 560 uA10
Supply current (per channel) IDDVO = VDD/2, VDD = 5 V; TA = 25°Ctyp 550 · max 660 uA10
Supply current (per channel) IDDVO = VDD/2, VDD = 10 V; TA = 25°Ctyp 625 · max 800 uA10
Supply current (per channel) IDDVO = VDD/2, VDD = 10 V; full range, –40°C to 125°Cmax 1000 uA10
Supply voltage rejection ratio (ΔVDD /ΔVIO) PSRRVDD = 2.7 V to 16 V, VIC = VDD/2, no load; TA = 25°Cmin 70 · typ 80 dB10
Supply voltage rejection ratio (ΔVDD /ΔVIO) PSRRVDD = 2.7 V to 16 V, VIC = VDD/2, no load; full range, –40°C to 125°Cmin 65 dB10
Unity-gain bandwidth UGBWRL = 2 kΩ, CL = 10 pF, VDD = 2.7 V; TA = 25°Ctyp 2.4 MHz10
Unity-gain bandwidth UGBWRL = 2 kΩ, CL = 10 pF, VDD = 5 V to 10 V; TA = 25°Ctyp 3 MHz10
Slew rate at unity gain SRVO(PP) = VDD/2, CL = 50 pF, RL = 10 kΩ, VDD = 2.7 V; TA = 25°Cmin 1.35 · typ 2.1 V/us10
Slew rate at unity gain SRVO(PP) = VDD/2, CL = 50 pF, RL = 10 kΩ, VDD = 2.7 V; full range, –40°C to 125°Cmin 1 V/us10
Slew rate at unity gain SRVO(PP) = VDD/2, CL = 50 pF, RL = 10 kΩ, VDD = 5 V; TA = 25°Cmin 1.45 · typ 2.4 V/us10
Slew rate at unity gain SRVO(PP) = VDD/2, CL = 50 pF, RL = 10 kΩ, VDD = 5 V; full range, –40°C to 125°Cmin 1.2 V/us10
Slew rate at unity gain SRVO(PP) = VDD/2, CL = 50 pF, RL = 10 kΩ, VDD = ±5 V; TA = 25°Cmin 1.8 · typ 2.6 V/us10
Slew rate at unity gain SRVO(PP) = VDD/2, CL = 50 pF, RL = 10 kΩ, VDD = ±5 V; full range, –40°C to 125°Cmin 1.3 V/us10
Phase margin φmRL = 2 kΩ, CL = 10 pF; TA = 25°Ctyp 65 °10
Gain marginRL = 2 kΩ, CL = 10 pF; TA = 25°Ctyp 18 dB10
Setting time tSVDD = 2.7 V, V(STEP)PP = 1 V, AV = –1, CL = 10 pF, RL = 2 kΩ; 0.1%; TA = 25°Ctyp 2.9 us10
Setting time tSVDD = 5 V, ±5 V; V(STEP)PP = 1 V, AV = –1, CL = 47 pF, RL = 2 kΩ; 0.1%; TA = 25°Ctyp 2 us10
Total harmonic distortion plus noise THD + NVDD = 2.7 V, VO(PP) = VDD/2 V, RL = 2 kΩ, f = 10 kHz, AV = 1; TA = 25°Ctyp 0.02 %10
Total harmonic distortion plus noise THD + NVDD = 2.7 V, VO(PP) = VDD/2 V, RL = 2 kΩ, f = 10 kHz, AV = 10; TA = 25°Ctyp 0.05 %10
Total harmonic distortion plus noise THD + NVDD = 2.7 V, VO(PP) = VDD/2 V, RL = 2 kΩ, f = 10 kHz, AV = 100; TA = 25°Ctyp 0.18 %10
Total harmonic distortion plus noise THD + NVDD = 5 V, ±5 V; VO(PP) = VDD/2 V, RL = 2 kΩ, f = 10 kHz, AV = 1; TA = 25°Ctyp 0.02 %10
Total harmonic distortion plus noise THD + NVDD = 5 V, ±5 V; VO(PP) = VDD/2 V, RL = 2 kΩ, f = 10 kHz, AV = 10; TA = 25°Ctyp 0.09 %10
Total harmonic distortion plus noise THD + NVDD = 5 V, ±5 V; VO(PP) = VDD/2 V, RL = 2 kΩ, f = 10 kHz, AV = 100; TA = 25°Ctyp 0.5 %10
Equivalent input noise voltage Vnf = 1 kHz; TA = 25°Ctyp 39 nV/√Hz10
Equivalent input noise voltage Vnf = 10 kHz; TA = 25°Ctyp 35 nV/√Hz10
Equivalent input noise current Inf = 1 kHz; TA = 25°Ctyp 0.6 fA /√Hz10

Pins, by the datasheet

5
1 OUT
Output. · p. 4
2 GND
Negative (lowest) supply or ground for single-supply operation. · p. 4
3 IN+
Positive (noninverting) input. · p. 4
4 IN–
Negative (inverting) input. · p. 4
5 VDD
Positive (highest) supply. · p. 4

Parameters

24
Common Mode Rejection Ratio(CMRR)
70dB
Current - Supply
550uA
Current - Supply(Max)
1mA
Dual Supply
-8V~8V
Gain Bandwidth Product
3MHz
Ib - Input Bias Current
1pA
Input Offset Current(Ios)
1pA
Input Offset Voltage Drift(Vos TC)
2uV/℃
Input Voltage Noise Density
39nV/√Hz@1kHz
Junction Temperature(Max)
150℃
Maximum Power Supply Range (Vdd-Vss)
16V
Number of Channels
1
Operating Temperature
-40℃~+125℃
Output Current
7mA
Output Current per Pin(Max)
100mA
Quiescent Current
550uA
Rail to Rail
Rail-to-rail output
Single supply
2.7V~16V
Slew Rate
2.4V/us
Thermal Resistance(Junction to Ambient)
221.7℃/W
Thermal Resistance(Junction to Board)
49.7℃/W
Thermal Resistance(Junction to Case)
144.7℃/W
Voltage - Supply(Absolute Max)
16.5V
Vos - Input Offset Voltage
500uV

Order codes

3

Pinout

5
The pins of the TLV271IDBV
PinNameType
1OUTOutput
2GNDPower in
3IN+Input
4IN-Input
5VDDPower in

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Questions

Is there a KiCad symbol and footprint for the TLV271IDBV?

Yes. The symbol is Operational Amplifiers:TLV271IDBV [alt] and the footprint Package_TO_SOT_SMD:SOT-23-5, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the TLV271IDBV?

SOT-23-5, with 5 pins. Its footprint is drawn on this page.

Where is the TLV271IDBV datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Where can I order the TLV271IDBV?

JLCPCB lists it as part C181500, with 1,021 in stock; the sellers' links on this page open their listings.

What can replace the TLV271IDBV?

Parts like it in the library: the LMV321IDBVR by UMW, the LM321MF by UMW, the TLV9061IDBV by Texas Instruments and the LM321-TR by Gainsil. Check their datasheets: a part that fits the footprint may still differ in its ratings.

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