MMBT4401L

onsemi

-55℃~+150℃ 1 NPN 100nA 225mW 250MHz 300 40V 600mA 6V 750mV NPN SOT-23 Bipolar (BJT) ROHS

Extended

Datasheetonsemi/MMBT4401L

Category: Bipolar (BJT)
Package: SOT-23
Pins: 3

Overview

The MMBT4401L is a bipolar made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 NPN 100nA 225mW 250MHz 300 40V 600mA 6V 750mV NPN SOT-23 Bipolar (BJT) ROHS.

PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_NPN_1B_2E_3C, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 845,336 are in stock at JLCPCB (part C31776).

Symbol

Pinmap_Generic:Q_NPN_1B_2E_3CFrom PCBKit's generic symbols

Footprint

Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

Collector-emitter, most: 40 V · Collector−emitter voltage, absolute max · p. 1
Collector current, most: 600 mA · Continuous collector current, max · p. 1
Junction, hottest: 150 °C · Junction temperature, max · p. 1
Junction to air (SOT−23 (TO−236)): 556 K/W · Junction to ambient, FR−5 board, max · p. 1
Junction to air (SOT−23 (TO−236)): 417 K/W · Junction to ambient, alumina substrate, max · p. 1
Current gain, least: 20 · DC gain, IC = 0.1 mAdc, VCE = 1.0 Vdc, min · p. 2
Current gain, least: 40 · DC gain, IC = 1.0 mAdc, VCE = 1.0 Vdc, min · p. 2
Current gain, least: 80 · DC gain, IC = 10 mAdc, VCE = 1.0 Vdc, min · p. 2
Current gain, least: 100 · DC gain, IC = 150 mAdc, VCE = 1.0 Vdc, min · p. 2

What it is and has

Function: Switching transistor · p. 1
Technology: NPN silicon · p. 1
Qualification: AEC−Q101 qualified and PPAP capable · p. 1
Package: SOT−23 (TO−236) · p. 7

Specifications

Parameter	Conditions	As printed	Page
Collector −Emitter Voltage VCEO		max 40 Vdc	1
Collector −Base Voltage VCBO		max 60 Vdc	1
Emitter −Base Voltage VEBO		max 6 Vdc	1
Collector Current − Continuous IC		max 600 mAdc	1
Collector Current − Peak ICM		max 900 mAdc	1
Total Device Dissipation FR− 5 Board PD	(Note 1) @TA = 25°C	max 225 mW	1
Derate above 25°C	FR−5 board	max 1.8 mW/°C	1
Thermal Resistance, Junction−to−Ambient RqJA	FR−5 board	max 556 °C/W	1
Total Device Dissipation Alumina Substrate PD	(Note 2) @TA = 25°C	max 300 mW	1
Derate above 25°C	Alumina substrate	max 2.4 mW/°C	1
Thermal Resistance, Junction−to−Ambient RqJA	Alumina substrate	max 417 °C/W	1
Junction and Storage Temperature TJ, Tstg		min -55 · max 150 °C	1
Collector −Emitter Breakdown Voltage (Note 3) V(BR)CEO	TA = 25°C; IC = 1.0 mAdc, IB = 0	min 40 Vdc	2
Collector −Base Breakdown Voltage V(BR)CBO	TA = 25°C; IC = 0.1 mAdc, IE = 0	min 60 Vdc	2
Emitter −Base Breakdown Voltage V(BR)EBO	TA = 25°C; IE = 0.1 mAdc, IC = 0	min 6 Vdc	2
Base Cutoff Current IBEV	TA = 25°C; VCE = 35 Vdc, VEB = 0.4 Vdc	max 0.1 mAdc	2
Collector Cutoff Current ICEX	TA = 25°C; VCE = 35 Vdc, VEB = 0.4 Vdc	max 0.1 mAdc	2
DC Current Gain hFE	TA = 25°C; IC = 0.1 mAdc, VCE = 1.0 Vdc; Note 3	min 20 −	2
DC Current Gain hFE	TA = 25°C; IC = 1.0 mAdc, VCE = 1.0 Vdc; Note 3	min 40 −	2
DC Current Gain hFE	TA = 25°C; IC = 10 mAdc, VCE = 1.0 Vdc; Note 3	min 80 −	2
DC Current Gain hFE	TA = 25°C; IC = 150 mAdc, VCE = 1.0 Vdc; Note 3	min 100 · max 300 −	2
DC Current Gain hFE	TA = 25°C; IC = 500 mAdc, VCE = 2.0 Vdc; Note 3	min 40 −	2
Collector −Emitter Saturation Voltage VCE(sat)	TA = 25°C; IC = 150 mAdc, IB = 15 mAdc; Note 3	max 0.4 Vdc	2
Collector −Emitter Saturation Voltage VCE(sat)	TA = 25°C; IC = 500 mAdc, IB = 50 mAdc; Note 3	max 0.75 Vdc	2
Base −Emitter Saturation Voltage VBE(sat)	TA = 25°C; IC = 150 mAdc, IB = 15 mAdc; Note 3	min 0.75 · max 0.95 Vdc	2
Base −Emitter Saturation Voltage VBE(sat)	TA = 25°C; IC = 500 mAdc, IB = 50 mAdc; Note 3	max 1.2 Vdc	2
Current −Gain − Bandwidth Product fT	TA = 25°C; IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz	min 250 MHz	2
Collector−Base Capacitance Ccb	TA = 25°C; VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz	max 6.5 pF	2
Emitter−Base Capacitance Ceb	TA = 25°C; VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz	max 30 pF	2
Input Impedance hie	TA = 25°C; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz	min 1 · max 15 kW	2
Voltage Feedback Ratio hre	TA = 25°C; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz	min 0.1 · max 8 X 10− 4	2
Small −Signal Current Gain hfe	TA = 25°C; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz	min 40 · max 500 −	2
Output Admittance hoe	TA = 25°C; IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz	min 1 · max 30 mmhos	2
Delay Time td	TA = 25°C; VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc	max 15 ns	2
Rise Time tr	TA = 25°C; VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc	max 20 ns	2
Storage Time ts	TA = 25°C; VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc	max 225 ns	2
Fall Time tf	TA = 25°C; VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc	max 30 ns	2

Pins, by the datasheet

1 BASE: Base. · p. 7
2 EMITTER: Emitter. · p. 7
3 COLLECTOR: Collector. · p. 7

Ordering codes, by the datasheet

MMBT4401LT1G: SOT−23 (Pb−Free) · 3000 / Tape & Reel · p. 1
SMMBT4401LT1G: SOT−23 (Pb−Free) · 3000 / Tape & Reel; S prefix for automotive and other applications requiring unique site and control change requirements · p. 1
MMBT4401LT3G: SOT−23 (Pb−Free) · 10,000 / Tape & Reel · p. 1

Parameters

Collector - Emitter Voltage VCEO: 40V
Configuration: Standalone
Current - Collector Cutoff: 100nA
Current - Collector(Ic): 600mA
DC Current Gain: 20
DC Current Gain (hFE@Ic,Vce): 100@150mA,1V
Emitter-Base Voltage(Vebo): 6V
Junction Temperature(Max): 150℃
Number: 1 NPN
Operating Temperature: -55℃~+150℃
Pd - Power Dissipation: 225mW
Thermal Resistance(Junction to Ambient): 556℃/W
Transition frequency(fT): 250MHz
Vce Saturation(VCE(sat)): 750mV
type: NPN

Order codes

MMBT4401LT3GLCSC C150042
MMBT4401LT1GLCSC C31776
MMBT4401LT3GLCSC C896773

Pinout

The pins of the MMBT4401L
Pin	Name	Type
1	B	Input
2	E	Passive
3	C	Passive

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Questions

Is there a KiCad symbol and footprint for the MMBT4401L?

Yes. The symbol is Pinmap_Generic:Q_NPN_1B_2E_3C and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the MMBT4401L?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the MMBT4401L datasheet?

onsemi publishes it: the Datasheet link on this page opens it.

Where can I order the MMBT4401L?

JLCPCB lists it as part C31776, with 845,336 in stock; the sellers' links on this page open their listings.

What can replace the MMBT4401L?

Parts like it in the library: the SS8050 by hongjiacheng, the MMBT5551 by hongjiacheng, the MMBT5401 by hongjiacheng and the MMBT5551 by Jiangsu Changjing Electronics Technology (CJ). Check their datasheets: a part that fits the footprint may still differ in its ratings.