
Overview
The BSS138 is a MOSFET made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 N-channel 1.5V 2.4nC@25V 220mA 27pF 3.5Ω@10V 360mW 50V 6pF SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Transistor_FET:BSS138, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 74,017 are in stock at JLCPCB (part C52895).
Symbol
Footprint
From the datasheet
12- Drain-source, most
- 50 V · Drain-source voltage, absolute max · p. 1
- Gate-source, most
- 20 V · Gate-source voltage, absolute max magnitude (±20 V) · p. 1
- Drain current, most
- 220 mA · Continuous drain current, max at TA = 25°C · p. 1
- Junction, hottest
- 150 °C · Operating junction temperature, max · p. 1
- Junction to air (SOT-23)
- 350 K/W · Junction-to-ambient thermal resistance, minimum pad · p. 1
- Gate threshold
- 1.3 V · Gate threshold voltage, typical at VDS = VGS, ID = 1 mA · p. 2
- On resistance
- 3.5 Ω · Max at VGS = 10 V, ID = 0.22 A, TA = 25°C · p. 2
- On resistance
- 6 Ω · Max at VGS = 4.5 V, ID = 0.22 A, TA = 25°C · p. 2
- On resistance
- 5.8 Ω · Max at VGS = 10 V, ID = 0.22 A, TJ = 125°C · p. 2
- Edge
- 7 ns · Fall time, typical at VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω · p. 2
- Forward voltage
- 800 mV · Drain-source diode voltage, typical at IS = 0.44 A, VGS = 0 V · p. 2
- Forward current, most
- 220 mA · Drain-source diode continuous forward current, max · p. 2
What it is and has
2- Transistor type
- N-Channel Logic Level Enhancement Mode Field Effect Transistor · p. 1
- Cell design
- High density cell design for extremely low RDS(ON) · p. 1
Specifications
35| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDSS | TA=25oC unless otherwise noted | max 50 V | 1 |
| Gate-Source Voltage VGSS | TA=25oC unless otherwise noted; rating ±20 V | min -20 · max 20 V | 1 |
| Drain Current – Continuous ID | TA=25oC; Note 1 | max 0.22 A | 1 |
| Drain Current – Pulsed ID | TA=25oC | max 0.88 A | 1 |
| Maximum Power Dissipation PD | TA=25oC; Note 1 | max 0.36 W | 1 |
| Derate Above 25°C PD | Above 25°C | max 2.8 mW/°C | 1 |
| Operating and Storage Junction Temperature Range TJ, TSTG | min -55 · max 150 °C | 1 | |
| Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds TL | 1/16” from Case for 10 Seconds | max 300 °C | 1 |
| Thermal Resistance, Junction-to-Ambient RθJA | SOT-23; Note 1; minimum pad | max 350 °C/W | 1 |
| Drain–Source Breakdown Voltage BVDSS | TA = 25°C; VGS = 0 V, ID = 250 uA | min 50 V | 2 |
| Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ | ID = 250 uA,Referenced to 25°C | typ 72 mV/°C | 2 |
| Zero Gate Voltage Drain Current IDSS | TA = 25°C; VDS = 50 V, VGS = 0 V | max 0.5 uA | 2 |
| Zero Gate Voltage Drain Current IDSS | VDS = 50 V, VGS = 0 V TJ = 125°C | max 5 uA | 2 |
| Zero Gate Voltage Drain Current IDSS | TA = 25°C; VDS = 30 V, VGS = 0 V | max 100 nA | 2 |
| Gate–Body Leakage. IGSS | TA = 25°C; VGS = ±20 V, VDS = 0 V; limit ±100 nA | max 100 nA | 2 |
| Gate Threshold Voltage VGS(th) | TA = 25°C; VDS = VGS, ID = 1 mA; Note 2 | min 0.8 · typ 1.3 · max 1.5 V | 2 |
| Gate Threshold Voltage Temperature Coefficient ∆VGS(th)/∆TJ | ID = 1 mA,Referenced to 25°C; Note 2 | typ -2 mV/°C | 2 |
| Static Drain–Source On–Resistance RDS(on) | TA = 25°C; VGS = 10 V, ID = 0.22 A; Note 2 | typ 0.7 · max 3.5 Ω | 2 |
| Static Drain–Source On–Resistance RDS(on) | TA = 25°C; VGS = 4.5 V, ID = 0.22 A; Note 2 | typ 1 · max 6 Ω | 2 |
| Static Drain–Source On–Resistance RDS(on) | VGS = 10 V, ID = 0.22 A, TJ = 125°C; Note 2 | typ 1.1 · max 5.8 Ω | 2 |
| On–State Drain Current ID(on) | TA = 25°C; VGS = 10 V, VDS = 5 V; Note 2 | min 0.2 A | 2 |
| Forward Transconductance gFS | TA = 25°C; VDS = 10V, ID = 0.22 A; Note 2 | min 0.12 · typ 0.5 S | 2 |
| Input Capacitance Ciss | TA = 25°C; VDS = 25 V, VGS = 0 V, f = 1.0 MHz | typ 27 pF | 2 |
| Output Capacitance Coss | TA = 25°C; VDS = 25 V, VGS = 0 V, f = 1.0 MHz | typ 13 pF | 2 |
| Reverse Transfer Capacitance Crss | TA = 25°C; VDS = 25 V, VGS = 0 V, f = 1.0 MHz | typ 6 pF | 2 |
| Gate Resistance RG | TA = 25°C; VGS = 15 mV, f = 1.0 MHz | typ 9 Ω | 2 |
| Turn–On Delay Time td(on) | TA = 25°C; VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω; Note 2 | typ 2.5 · max 5 ns | 2 |
| Turn–On Rise Time tr | TA = 25°C; VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω; Note 2 | typ 9 · max 18 ns | 2 |
| Turn–Off Delay Time td(off) | TA = 25°C; VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω; Note 2 | typ 20 · max 36 ns | 2 |
| Turn–Off Fall Time tf | TA = 25°C; VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω; Note 2 | typ 7 · max 14 ns | 2 |
| Total Gate Charge Qg | TA = 25°C; VDS = 25 V, ID = 0.22 A, VGS = 10 V; Note 2 | typ 1.7 · max 2.4 nC | 2 |
| Gate–Source Charge Qgs | TA = 25°C; VDS = 25 V, ID = 0.22 A, VGS = 10 V; Note 2 | typ 0.1 nC | 2 |
| Gate–Drain Charge Qgd | TA = 25°C; VDS = 25 V, ID = 0.22 A, VGS = 10 V; Note 2 | typ 0.4 nC | 2 |
| Maximum Continuous Drain–Source Diode Forward Current IS | TA = 25°C | max 0.22 A | 2 |
| Drain–Source Diode Forward Voltage VSD | TA = 25°C; VGS = 0 V, IS = 0.44 A; Note 2 | typ 0.8 · max 1.4 V | 2 |
Ordering codes, by the datasheet
1- BSS138
- SOT-23 · Device marking SS; 7’’ reel; 8mm tape width; 3000 units · p. 1
Parameters
20- Current - Continuous Drain(Id)
- 220mA
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 3.5Ω@10V,220mA
- Drain to Source Voltage
- 50V
- Forward Current(If)
- 220mA
- Gate Charge(Qg)
- 2.4nC@25V
- Gate Threshold Voltage (Vgs(th))
- 1.3V
- Gate Threshold Voltage (Vgs(th)@Id)
- 1.5V@1mA
- Input Capacitance(Ciss)
- 27pF
- Junction Temperature(Max)
- 150℃
- Number
- 1 N-channel
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 13pF
- Pd - Power Dissipation
- 360mW
- RDS(on)
- 3.5Ω@10V
- Reverse Transfer Capacitance (Crss@Vds)
- 6pF
- Rise Time
- 7ns
- Thermal Resistance(Junction to Ambient)
- 350℃/W
- Type
- N-Channel
- Vgs
- ±20V
- Voltage - Forward(Vf)
- 800mV
Order codes
1- BSS138LCSC C52895
Pinout
3| Pin | Name | Type |
|---|---|---|
| 1 | G | Input |
| 2 | S | Passive |
| 3 | D | Passive |
Show this part on your page
<iframe src="https://pcbkit.io/embed/parts/onsemi/BSS138" title="BSS138 in PCBKit" width="100%" height="480" style="border:0;border-radius:12px" allow="fullscreen" loading="lazy"></iframe><img src="https://pcbkit.io/embed/parts/onsemi/BSS138.jpg" alt="BSS138" width="1200" height="900">[](https://pcbkit.io/parts/onsemi/BSS138)Questions
Is there a KiCad symbol and footprint for the BSS138?
Yes. The symbol is Transistor_FET:BSS138 and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the BSS138?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the BSS138 datasheet?
onsemi publishes it: the Datasheet link on this page opens it.
Where can I order the BSS138?
JLCPCB lists it as part C52895, with 74,017 in stock; the sellers' links on this page open their listings.
What can replace the BSS138?
Parts like it in the library: the 2N7002K by Diodes Incorporated, the BSS138P by Nexperia, the BSS138K by ElecSuper and the BSS138 by ElecSuper. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Parts like it
82N7002K
SOT-23-55℃~+150℃ 1 N-channel 1.2Ω@10V、1.4Ω@5V 1.6V 2.9pF 300pC@4.5V 30pF 380mA 4.2pF 540mW 60V SOT-23 MOSFETs ROHSDiodes IncorporatedMOSFETsBSS138P
SOT-23-55℃~+150℃ 1 N-channel 1.5V 1.6Ω@10V 350mW、1.14W 360mA 50pF 60V 800pC@4.5V SOT-23 MOSFETs ROHSNexperiaMOSFETsBSS138K
SOT-231 N-channel 1.5Ω@10V 1V 2.2pF 25pF 400mA 417mW 60V 650pC@4.5V 9.7pF N-Channel SOT-23 MOSFETs ROHSElecSuperMOSFETsBSS138
SOT-231 N-channel 1.5Ω@10V 1V 2.2pF 25pF 400mA 417mW 60V 650pC@4.5V 9.7pF N-Channel SOT-23 MOSFETs ROHSElecSuperMOSFETsSI2308A
SOT-23-40℃~+150℃ 1 N-channel 1.25W 15pF 240pF 3A 3V 4.8nC@10V 50pF 60V 80mΩ@10V、95mΩ@4.5V N-Channel SOT-23 MOSFETs ROHSUMWMOSFETs2N7002NXAKR
SOT-23-55℃~+150℃ 1 N-channel 190mA、300mA 2.1V 20pF 265mW、1.33W 4.5Ω@10V 430pC@4.5V 60V SOT-23 MOSFETs ROHSNexperiaMOSFETsBSS138
SOT-23-55℃~+150℃ 1 N-channel 1.6V 13pF 2.4nC@10V 220mA 27pF 360mW 50V 6pF 6Ω@4.5V N-Channel SOT-23 MOSFETs ROHSJSMSEMIMOSFETs2N7002BK
SOT-23-55℃~+150℃ 1 N-channel 1.6Ω@10V 2.1V 350mA 370mW 4pF 50pF 600pC@4.5V 60V N-Channel SOT-23 MOSFETs ROHSNexperiaMOSFETs