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BS170, in 3D

BS170

onsemi

-55℃~+150℃ 1 N-channel 1.2Ω@10V 17pF 2.1V 24pF 500mA 60V 7pF 830mW N-Channel TO-92 MOSFETs ROHS

Extended
DatasheetJLCPCBLCSConsemi/BS170
Category
MOSFETs
Package
TO-92
Pins
3

Overview

The BS170 is a MOSFET made by onsemi in a TO-92 package with 3 pins. -55℃~+150℃ 1 N-channel 1.2Ω@10V 17pF 2.1V 24pF 500mA 60V 7pF 830mW N-Channel TO-92 MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Transistor_FET:BS170, from KiCad's library) and its footprint (Package_TO_SOT_THT:TO-92_Inline, from KiCad's library), ready for a KiCad board. 4,373 are in stock at JLCPCB (part C111691). 187 open-source boards in 160 repositories on GitHub use it.

Symbol

123
Transistor_FET:BS170From KiCad's library

Footprint

123
Package_TO_SOT_THT:TO-92_InlineFrom KiCad's library

From the datasheet

7
Drain-source, most
60 V · Drain-source voltage, absolute max · p. 2
Gate-source, most
20 V · Gate-source voltage magnitude, absolute max ±20 V · p. 2
Drain current, most
500 mA · Continuous drain current at TA = 25°C, max · p. 2
Junction, hottest
150 °C · Operating junction temperature, max · p. 2
Junction to air (TO-92)
150 K/W · Junction-to-ambient thermal resistance at TA = 25°C, max · p. 2
Gate threshold
2.1 V · VDS = VGS, ID = 1mA, typical · p. 3
On resistance
1.2 Ω · VGS = 10V, ID = 200mA, typical · p. 3

What it is and has

3
Transistor type
N-Channel Enhancement Mode Field Effect Transistor · p. 2
Cell design
High density cell design for low RDS(ON) · p. 2
Application
Voltage controlled small signal switch · p. 2

Specifications

21
ParameterConditionsAs printedPage
Drain-Source Voltage VDSSBS170; TA = 25°Cmax 60 V2
Drain-Gate Voltage (RGS ≤ 1MΩ) VDGRBS170; TA = 25°Cmax 60 V2
Gate-Source Voltage VGSSBS170; TA = 25°Cmin -20 · max 20 V2
Drain Current - Continuous IDBS170; TA = 25°Cmax 500 mA2
Drain Current - Pulsed IDBS170; TA = 25°Cmax 1200 mA2
Operating and Storage Temperature Range TJ, TSTGBS170min -55 · max 150 °C2
Maximum Lead Temperature for Soldering Purposes TLBS170; 1/16" from Case for 10 Secondsmax 300 °C2
Maximum Power Dissipation PDBS170; TO-92; TA = 25°Cmax 830 mW2
Derate above 25°C PDBS170; TO-92max 6.6 mW/°C2
Thermal Resistance, Junction to Ambient RθJABS170; TO-92; TA = 25°Cmax 150 °C/W2
Drain-Source Breakdown Voltage BVDSSBS170 (All); TA = 25°C; VGS = 0V, ID = 100uAmin 60 V3
Zero Gate Voltage Drain Current IDSSBS170 (All); TA = 25°C; VDS = 25V, VGS = 0Vmax 0.5 uA3
Gate - Body Leakage, Forward IGSSFBS170 (All); TA = 25°C; VGS = 15V, VDS = 0Vmax 10 nA3
Gate Threshold Voltage VGS(th)BS170 (All); TA = 25°C; VDS = VGS, ID = 1mA; Pulse Width ≤ 300us, Duty Cycle ≤ 2.0%min 0.8 · typ 2.1 · max 3 V3
Static Drain-Source On-Resistance RDS(ON)BS170 (All); TA = 25°C; VGS = 10V, ID = 200mA; Pulse Width ≤ 300us, Duty Cycle ≤ 2.0%typ 1.2 · max 5 Ω3
Forward Transconductance gFSBS170; TA = 25°C; VDS = 10V, ID = 200mA; Pulse Width ≤ 300us, Duty Cycle ≤ 2.0%typ 320 mS3
Input Capacitance CissBS170 (All); TA = 25°C; VDS = 10V, VGS = 0V, f = 1.0MHztyp 24 · max 40 pF3
Output Capacitance CossBS170 (All); TA = 25°C; VDS = 10V, VGS = 0V, f = 1.0MHztyp 17 · max 30 pF3
Reverse Transfer Capacitance CrssBS170 (All); TA = 25°C; VDS = 10V, VGS = 0V, f = 1.0MHztyp 7 · max 10 pF3
Turn-On Time tonBS170; TA = 25°C; VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25Ω; Pulse Width ≤ 300us, Duty Cycle ≤ 2.0%max 10 ns3
Turn-Off Time toffBS170; TA = 25°C; VDD = 25V, ID = 200mA, VGS = 10V, RGEN = 25Ω; Pulse Width ≤ 300us, Duty Cycle ≤ 2.0%max 10 ns3

Ordering codes, by the datasheet

5
BS170
TO-92 · BULK; STRAIGHT lead frame; DGS pin array · p. 3
BS170_D26Z
TO-92 · Tape and Reel; FORMING lead frame; DGS pin array · p. 3
BS170_D27Z
TO-92 · Tape and Reel; FORMING lead frame; DGS pin array · p. 3
BS170_D74Z
TO-92 · AMMO; FORMING lead frame; DGS pin array · p. 3
BS170_D75Z
TO-92 · AMMO; FORMING lead frame; DGS pin array · p. 3

Parameters

15
Current - Continuous Drain(Id)
500mA
Drain Source On Resistance (RDS(on)@Vgs,Id)
5Ω@10V,200mA
Drain to Source Voltage
60V
Gate Threshold Voltage (Vgs(th))
2.1V
Gate Threshold Voltage (Vgs(th)@Id)
3V@1mA
Input Capacitance(Ciss)
24pF
Junction Temperature(Max)
150℃
Number
1 N-channel
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
17pF
Pd - Power Dissipation
830mW
RDS(on)
1.2Ω
Reverse Transfer Capacitance (Crss@Vds)
7pF
Thermal Resistance(Junction to Ambient)
150℃/W
Type
N-Channel

Order codes

1

Pinout

3
The pins of the BS170
PinNameType
1DPassive
2GInput
3SPassive

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Questions

Is there a KiCad symbol and footprint for the BS170?

Yes. The symbol is Transistor_FET:BS170 and the footprint Package_TO_SOT_THT:TO-92_Inline, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the BS170?

TO-92, with 3 pins. Its footprint is drawn on this page.

Where is the BS170 datasheet?

onsemi publishes it: the Datasheet link on this page opens it.

Where can I order the BS170?

JLCPCB lists it as part C111691, with 4,373 in stock; the sellers' links on this page open their listings.

What can replace the BS170?

Parts like it in the library: the BS170-D27Z by onsemi, the BS170-D74Z by onsemi, the BS170-D75Z by onsemi and the 2N7000 by DIOTEC. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the BS170?

187 boards in 160 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

Parts like it

5