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2N7002K, in 3D

2N7002K

onsemi

-55℃~+150℃ 1 N-channel 2.3V 2.5Ω@4.5V 380mA 420mW 45pF 60V 700pC@4.5V N-Channel SOT-23 MOSFETs ROHS

Extended
DatasheetJLCPCBLCSConsemi/2N7002K
Category
MOSFETs
Package
SOT-23
Pins
3

Overview

The 2N7002K is a MOSFET made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 N-channel 2.3V 2.5Ω@4.5V 380mA 420mW 45pF 60V 700pC@4.5V N-Channel SOT-23 MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Transistor_FET:2N7002K, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 172,755 are in stock at JLCPCB (part C116584).

Symbol

123
Transistor_FET:2N7002KFrom KiCad's library

Footprint

123
Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

16
Drain-source, most
60 V · Drain-to-source voltage, absolute max · p. 1
Gate-source, most
20 V · Gate-to-source voltage, absolute max magnitude, ±20 V · p. 1
Drain current, most
380 mA · Continuous drain current max, TA = 25°C, 1 sq in pad · p. 1
Drain current, most
320 mA · Continuous drain current max, TA = 25°C, minimum pad · p. 1
Junction, hottest
150 °C · Junction temperature max · p. 1
Junction to air (SOT−23)
300 K/W · Steady state max, FR4, 1 sq in pad, 1 oz Cu · p. 2
Junction to air (SOT−23)
92 K/W · t ≤ 5 s max, FR4, 1 sq in pad, 1 oz Cu · p. 2
Junction to air (SOT−23)
417 K/W · Steady state max, FR4, 0.08 sq in pad, 1 oz Cu · p. 2
Junction to air (SOT−23)
154 K/W · t ≤ 5 s max, FR4, 0.08 sq in pad, 1 oz Cu · p. 2
Gate threshold
2.3 V · Gate threshold max, VGS = VDS, ID = 250 mA · p. 2
On resistance
1.6 Ω · VGS = 10 V, ID = 500 mA, max · p. 2
On resistance
2.5 Ω · VGS = 4.5 V, ID = 200 mA, max · p. 2
Forward voltage
800 mV · Body diode typical, IS = 200 mA, VGS = 0 V, TJ = 25°C · p. 2
Forward voltage
700 mV · Body diode typical, IS = 200 mA, VGS = 0 V, TJ = 85°C · p. 2
Forward current, most
300 mA · Body diode source current max · p. 1
Edge
9 ns · Rise time typical, VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 W · p. 2

What it is and has

3
Device
60 V, 380 mA, single N-channel MOSFET, SOT−23 · p. 1
Protection
ESD protected · p. 1
Mounting
Surface mount · p. 1

Specifications

44
ParameterConditionsAs printedPage
Drain−to−Source Voltage VDSSmax 60 V1
Gate−to−Source Voltage VGSSymmetric voltage limitsmin -20 · max 20 V1
Drain Current (Note 1) IDSteady State 1 sq in Pad; TA = 25°Cmax 380 mA1
Drain Current (Note 1) IDSteady State 1 sq in Pad; TA = 85°Cmax 270 mA1
Drain Current (Note 2) IDSteady State Minimum Pad; TA = 25°Cmax 320 mA1
Drain Current (Note 2) IDSteady State Minimum Pad; TA = 85°Cmax 230 mA1
Power Dissipation PDSteady State 1 sq in Padmax 420 mW1
Power Dissipation PDSteady State Minimum Padmax 300 mW1
Pulsed Drain Current (tp = 10 ms) IDMtp = 10 msmax 5 A1
Operating Junction and Storage Temperature Range TJ, TSTGLower limitmin -55 °C1
Operating Junction and Storage Temperature Range TJ, TSTGUpper limitmax 150 °C1
Source Current (Body Diode) ISmax 300 mA1
Lead Temperature for Soldering Purposes TL1/8″ from case for 10 smax 260 °C1
Gate−Source ESD Rating ESDHBM, Method 3015max 2000 V1
Junction−to−Ambient − Steady State (Note 3) RqJASOT−23; FR4 board, 1 sq in pad, 1 oz Cumax 300 °C/W2
Junction−to−Ambient − t ≤ 5 s (Note 3) RqJASOT−23; FR4 board, 1 sq in pad, 1 oz Cumax 92 °C/W2
Junction−to−Ambient − Steady State (Note 4) RqJASOT−23; FR4 board, 0.08 sq in pad, 1 oz Cumax 417 °C/W2
Junction−to−Ambient − t ≤ 5 s (Note 4) RqJASOT−23; FR4 board, 0.08 sq in pad, 1 oz Cumax 154 °C/W2
Drain−to−Source Breakdown Voltage V(BR)DSSVGS = 0 V, ID = 250 mAmin 60 V2
Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJtyp 71 mV/°C2
Zero Gate Voltage Drain Current IDSSVGS = 0 V, VDS = 60 V, TJ = 25°Cmax 1 mA2
Zero Gate Voltage Drain Current IDSSVGS = 0 V, VDS = 60 V, TJ = 125°Cmax 10 mA2
Zero Gate Voltage Drain Current IDSSVGS = 0 V, VDS = 50 V, TJ = 25°Cmax 100 nA2
Gate−to−Source Leakage Current IGSSVDS = 0 V, VGS = ±20 V; symmetric leakage limitsmin -10 · max 10 mA2
Gate−to−Source Leakage Current IGSSVDS = 0 V, VGS = ±10 Vmax 450 nA2
Gate−to−Source Leakage Current IGSSVDS = 0 V, VGS = ±5.0 Vmax 150 nA2
Gate Threshold Voltage VGS(TH)VGS = VDS, ID = 250 mA; pulse width ≤ 300 ms, duty cycle ≤ 2%min 1 · max 2.3 V2
Negative Threshold Temperature Coefficient VGS(TH)/TJNote 5typ 4 mV/°C2
Drain−to−Source On Resistance RDS(on)VGS = 10 V, ID = 500 mA; pulse width ≤ 300 ms, duty cycle ≤ 2%typ 1.19 · max 1.6 W2
Drain−to−Source On Resistance RDS(on)VGS = 4.5 V, ID = 200 mA; pulse width ≤ 300 ms, duty cycle ≤ 2%typ 1.33 · max 2.5 W2
Forward Transconductance gFSVDS = 5 V, ID = 200 mA; pulse width ≤ 300 ms, duty cycle ≤ 2%typ 530 mS2
Input Capacitance CISSVGS = 0 V, f = 1 MHz, VDS = 20 Vtyp 24.5 · max 45 pF2
Output Capacitance COSSVGS = 0 V, f = 1 MHz, VDS = 20 Vtyp 4.2 · max 8 pF2
Reverse Transfer Capacitance CRSSVGS = 0 V, f = 1 MHz, VDS = 20 Vtyp 2.2 · max 5 pF2
Total Gate Charge QG(TOT)VGS = 4.5 V, VDS = 10 V; ID = 200 mAtyp 0.7 nC2
Threshold Gate Charge QG(TH)VGS = 4.5 V, VDS = 10 V; ID = 200 mAtyp 0.1 nC2
Gate−to−Source Charge QGSVGS = 4.5 V, VDS = 10 V; ID = 200 mAtyp 0.3 nC2
Gate−to−Drain Charge QGDVGS = 4.5 V, VDS = 10 V; ID = 200 mAtyp 0.1 nC2
Turn−On Delay Time td(ON)VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 Wtyp 12.2 ns2
Rise Time trVGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 Wtyp 9 ns2
Turn−Off Delay Time td(OFF)VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 Wtyp 55.8 ns2
Fall Time tfVGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 Wtyp 29 ns2
Forward Diode Voltage VSDVGS = 0 V, IS = 200 mA, TJ = 25°Ctyp 0.8 · max 1.2 V2
Forward Diode Voltage VSDVGS = 0 V, IS = 200 mA, TJ = 85°Ctyp 0.7 V2

Pins, by the datasheet

3
1 GATE
Gate. · p. 6
2 SOURCE
Source. · p. 6
3 DRAIN
Drain. · p. 6

Ordering codes, by the datasheet

2
2N7002KT1G
SOT−23 · Pb−Free; 3000 / Tape & Reel · p. 1
2V7002KT1G
SOT−23 · 2V prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable; Pb−Free; 3000 / Tape & Reel · p. 1

Parameters

20
Current - Continuous Drain(Id)
380mA
Drain Source On Resistance (RDS(on)@Vgs,Id)
1.6Ω@10V,500mA
Drain to Source Voltage
60V
Forward Current(If)
300mA
Gate Charge(Qg)
700pC@4.5V
Gate Threshold Voltage (Vgs(th))
2.3V
Gate Threshold Voltage (Vgs(th)@Id)
2.1V@250μA
Input Capacitance(Ciss)
45pF
Junction Temperature(Max)
150℃
Number
1 N-channel
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
8pF
Pd - Power Dissipation
420mW
RDS(on)
2.5Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)
5pF
Rise Time
9ns
Thermal Resistance(Junction to Ambient)
417℃/W
Type
N-Channel
Vgs
±20V
Voltage - Forward(Vf)
800mV

Order codes

2

Pinout

3
The pins of the 2N7002K
PinNameType
1GInput
2SPassive
3DPassive

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Questions

Is there a KiCad symbol and footprint for the 2N7002K?

Yes. The symbol is Transistor_FET:2N7002K and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the 2N7002K?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the 2N7002K datasheet?

onsemi publishes it: the Datasheet link on this page opens it.

Where can I order the 2N7002K?

JLCPCB lists it as part C116584, with 172,755 in stock; the sellers' links on this page open their listings.

What can replace the 2N7002K?

Parts like it in the library: the 2N7002K by Diodes Incorporated, the SI2308A by UMW, the SI2310 by GOODWORK and the AS2324 by AnBon. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Parts like it

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