BC847C
NexperiaExtended
-65℃~+150℃ 1 NPN 100MHz 100mA 15nA 250mW 400mV 420 45V 6V NPN SOT-23 Bipolar (BJT) ROHS
- Part id
- nexperia/BC847C
- Category
- Bipolar (BJT)
- Package
- SOT-23
- Pins
- 3
- In stock
- 525,195 at JLCPCB (C8664)
Overview
The BC847C is a bipolar made by Nexperia in a SOT-23 package with 3 pins. -65℃~+150℃ 1 NPN 100MHz 100mA 15nA 250mW 400mV 420 45V 6V NPN SOT-23 Bipolar (BJT) ROHS.
PCBKit's library has its KiCad symbol (Transistor_BJT:BC847, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 525,195 are in stock at JLCPCB (part C8664).
Symbol
Footprint
From the datasheet
7- Collector-emitter, most
- 45 V · collector-emitter voltage, open base, absolute max · p. 3
- Collector current, most
- 100 mA · collector current, absolute max · p. 3
- Current gain, least
- 420 · BC847C DC current gain, VCE = 5 V, IC = 2 mA, min · p. 4
- Works from
- -65 °C · ambient temperature, absolute min · p. 3
- Works up to
- 150 °C · ambient temperature, absolute max · p. 3
- Junction, hottest
- 150 °C · junction temperature, absolute max · p. 3
- Junction to air (SOT23)
- 500 K/W · in free air, FR4 PCB, single-sided copper, tin-plated standard footprint, max · p. 3
What it is and has
3- Transistor type
- NPN general-purpose transistor · p. 1
- Package
- SOT23 (TO-236AB), surface-mounted plastic · p. 1
- Applications
- General-purpose switching and amplification · p. 1
Specifications
31| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| collector-emitter voltage VCEO | open base; Tamb = 25 °C | max 45 V | 1 |
| collector current IC | Tamb = 25 °C | max 100 mA | 1 |
| DC current gain hFE | BC847C; VCE = 5 V; IC = 2 mA; Tamb = 25 °C | min 420 · typ 520 · max 800 | 1 |
| collector-base voltage VCBO | open emitter | max 50 V | 3 |
| collector-emitter voltage VCEO | open base | max 45 V | 3 |
| emitter-base voltage VEBO | open collector | max 6 V | 3 |
| collector current IC | max 100 mA | 3 | |
| peak collector current ICM | single pulse; tp ≤ 1 ms | max 200 mA | 3 |
| peak base current IBM | single pulse; tp ≤ 1 ms | max 100 mA | 3 |
| total power dissipation Ptot | Tamb ≤ 25 °C; device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint | max 250 mW | 3 |
| junction temperature Tj | max 150 °C | 3 | |
| ambient temperature Tamb | min -65 · max 150 °C | 3 | |
| storage temperature Tstg | min -65 · max 150 °C | 3 | |
| thermal resistance from junction to ambient Rth(j-a) | SOT23; in free air; device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint | max 500 K/W | 3 |
| collector-base breakdown voltage V(BR)CBO | IC = 100 uA; IE = 0 A; Tamb = 25 °C | min 50 V | 4 |
| collector-emitter breakdown voltage V(BR)CES | IC = 2 mA; VBE = 0 A; Tamb = 25 °C | min 45 V | 4 |
| emitter-base breakdown voltage V(BR)EBO | IC = 0 A; IE = 100 uA; Tamb = 25 °C | min 6 V | 4 |
| collector-base cut-off current ICBO | VCB = 30 V; IE = 0 A; Tamb = 25 °C | max 15 nA | 4 |
| collector-base cut-off current ICBO | VCB = 30 V; IE = 0 A; Tj = 150 °C | max 5 uA | 4 |
| emitter-base cut-off current IEBO | VEB = 5 V; IC = 0 A; Tamb = 25 °C | max 100 nA | 4 |
| DC current gain hFE | BC847C; VCE = 5 V; IC = 10 uA; Tamb = 25 °C | typ 420 | 4 |
| collector-emitter saturation voltage VCEsat | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | typ 90 · max 200 mV | 4 |
| collector-emitter saturation voltage VCEsat | IC = 100 mA; IB = 5 mA; Tamb = 25 °C; pulsed; tp ≤ 300 us; δ ≤ 0.02 | typ 200 · max 400 mV | 4 |
| base-emitter saturation voltage VBEsat | IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C | typ 700 mV | 4 |
| base-emitter saturation voltage VBEsat | IC = 100 mA; IB = 5 mA; Tamb = 25 °C | typ 900 mV | 4 |
| base-emitter voltage VBE | VCE = 5 V; IC = 2 mA; Tamb = 25 °C | min 580 · typ 660 · max 700 mV | 4 |
| base-emitter voltage VBE | VCE = 5 V; IC = 10 mA; Tamb = 25 °C | max 770 mV | 4 |
| transition frequency fT | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C | min 100 MHz | 4 |
| collector capacitance Cc | VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 °C | max 1.5 pF | 4 |
| emitter capacitance Ce | VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz; Tamb = 25 °C | typ 11 pF | 4 |
| noise figure NF | IC = 200 uA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200Hz; Tamb = 25 °C | typ 2 · max 10 dB | 4 |
Pins, by the datasheet
3- 1 B
- Base. · p. 2
- 2 E
- Emitter. · p. 2
- 3 C
- Collector. · p. 2
Ordering codes, by the datasheet
4- BC847
- SOT23 (TO-236AB) · DC current gain selection: 110 to 800 at VCE = 5 V, IC = 2 mA. · p. 2
- BC847A
- SOT23 (TO-236AB) · DC current gain selection: 110 to 220, typical 180 at VCE = 5 V, IC = 2 mA. · p. 2
- BC847B
- SOT23 (TO-236AB) · DC current gain selection: 200 to 450, typical 290 at VCE = 5 V, IC = 2 mA. · p. 2
- BC847C
- SOT23 (TO-236AB) · DC current gain selection: 420 to 800, typical 520 at VCE = 5 V, IC = 2 mA. · p. 2
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Questions
Is there a KiCad symbol and footprint for the BC847C?
Yes. The symbol is Transistor_BJT:BC847 and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the BC847C?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the BC847C datasheet?
Nexperia publishes it: the Datasheet link on this page opens it.
Where can I order the BC847C?
JLCPCB lists it as part C8664, with 525,195 in stock; the sellers' links on this page open their listings.
What can replace the BC847C?
Parts like it in the library: the S8050 by hongjiacheng, the SS8050 by hongjiacheng, the MMBT5551 by hongjiacheng and the MMBT5401 by hongjiacheng. Check their datasheets: a part that fits the footprint may still differ in its ratings.