2 layers99 × 60 mm
Pwr
mfkiwl/KiwiSDR_PCB
KiCAD PCB files for KiwiSDR project including active antenna and bias tee
64 parts46
Overview
The MMBT4401 is a bipolar made by Diodes Incorporated in a SOT-23 package with 3 pins. -55℃~+150℃ 1 NPN 100nA 250MHz 350mW 400mV 40V 600mA 6V 80 NPN SOT-23 Bipolar (BJT) ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_NPN_1B_2E_3C, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 35,418 are in stock at JLCPCB (part C151826). 10 open-source boards in 10 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
10- Collector-emitter, most
- 40 V · Collector-emitter voltage, absolute max · p. 2
- Collector current, most
- 600 mA · Collector current, absolute max at TA = +25°C · p. 2
- Junction, hottest
- 150 °C · Junction temperature, max · p. 2
- Junction to air (SOT23)
- 403 K/W · Junction to ambient, minimum recommended pad layout, Note 5 · p. 2
- Junction to air (SOT23)
- 357 K/W · Junction to ambient, 15mm x 15mm copper, Note 6 · p. 2
- Junction to case (SOT23)
- 120 K/W · Junction to case, Note 5 · p. 2
- Current gain, least
- 20 · DC current gain, min at IC = 100uA, VCE = 1V · p. 4
- Current gain, least
- 40 · DC current gain, min at IC = 1mA, VCE = 1V · p. 4
- Current gain, least
- 80 · DC current gain, min at IC = 10mA, VCE = 1V · p. 4
- Current gain, least
- 100 · DC current gain, min at IC = 150mA, VCE = 1V · p. 4
What it is and has
6- Construction
- Epitaxial planar die · p. 1
- Application
- Medium power amplification and switching · p. 1
- Complementary PNP
- MMBT4403 · p. 1
- Package
- SOT23 · p. 1
- Compliance
- Lead-free and RoHS compliant · p. 1
- Materials
- Halogen and antimony free · p. 1
Specifications
41| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Collector-Base Voltage VCBO | TA = +25°C | max 60 V | 2 |
| Collector-Emitter Voltage VCEO | TA = +25°C | max 40 V | 2 |
| Emitter-Base Voltage VEBO | TA = +25°C | max 6 V | 2 |
| Collector Current IC | TA = +25°C | max 600 mA | 2 |
| Peak Collector Current ICM | TA = +25°C | max 1 A | 2 |
| Peak Base Current IBM | TA = +25°C | max 200 mA | 2 |
| Power Dissipation PD | TA = +25°C; Note 5 | max 310 mW | 2 |
| Power Dissipation PD | TA = +25°C; Note 6 | max 350 mW | 2 |
| Thermal Resistance, Junction to Ambient RθJA | TA = +25°C; Note 5 | max 403 C/W | 2 |
| Thermal Resistance, Junction to Ambient RθJA | TA = +25°C; Note 6 | max 357 C/W | 2 |
| Thermal Resistance, Junction to Leads RθJL | TA = +25°C; Note 7 | max 350 C/W | 2 |
| Thermal Resistance, Junction to Case RθJC | TA = +25°C; Note 5 | max 120 C/W | 2 |
| Operating and Storage Temperature Range TJ,TSTG | min -55 · max 150 C | 2 | |
| Electrostatic Discharge - Human Body Model ESD HBM | Note 8; JEDEC Class 3A | max 4000 V | 2 |
| Electrostatic Discharge - Machine Model ESD MM | Note 8; JEDEC Class C | max 400 V | 2 |
| Electrostatic Discharge – Charged Device Model ESD CDM | Note 8; JEDEC Class C3 | max 1000 V | 2 |
| Collector-Base Breakdown Voltage BVCBO | TA = +25°C; IC = 100uA | min 60 V | 4 |
| Collector-Emitter Breakdown Voltage (Note 9) BVCEO | TA = +25°C; IC = 10mA | min 40 V | 4 |
| Emitter-Base Breakdown Voltage BVEBO | TA = +25°C; IE = 100uA | min 6 V | 4 |
| Collector Cutoff Current ICEX | TA = +25°C; VCE = 35V, VEB(off) = 0.4V | max 100 nA | 4 |
| Base Cutoff Current IBL | TA = +25°C; VCE = 35V, VEB(off) = 0.4V | max 100 nA | 4 |
| DC Current Gain hFE | TA = +25°C; IC = 100uA, VCE = 1V; Note 9 | min 20 | 4 |
| DC Current Gain hFE | TA = +25°C; IC = 1mA, VCE = 1V; Note 9 | min 40 | 4 |
| DC Current Gain hFE | TA = +25°C; IC = 10mA, VCE = 1V; Note 9 | min 80 | 4 |
| DC Current Gain hFE | TA = +25°C; IC = 150mA, VCE = 1V; Note 9 | min 100 · max 300 | 4 |
| DC Current Gain hFE | TA = +25°C; IC = 500mA, VCE = 2V; Note 9 | min 40 | 4 |
| Collector-Emitter Saturation Voltage VCE(sat) | TA = +25°C; IC = 150mA, IB = 15mA; Note 9 | max 0.4 V | 4 |
| Collector-Emitter Saturation Voltage VCE(sat) | TA = +25°C; IC = 500mA, IB = 50mA; Note 9 | max 0.75 V | 4 |
| Base-Emitter Saturation Voltage VBE(sat) | TA = +25°C; IC = 150mA, IB = 15mA; Note 9 | min 0.75 · max 0.95 V | 4 |
| Base-Emitter Saturation Voltage VBE(sat) | TA = +25°C; IC = 500mA, IB = 50mA; Note 9 | max 1.2 V | 4 |
| Output Capacitance Ccb | TA = +25°C; VCB = 5V, f = 1MHz | max 6.5 pF | 4 |
| Input Capacitance Ceb | TA = +25°C; VEB = 0.5V, f = 1MHz | max 30 pF | 4 |
| Input Impedance hie | TA = +25°C; VCE = 10V, IC = 1mA, f = 1kHz | min 1 · max 15 kΩ | 4 |
| Voltage Feedback Ratio hre | TA = +25°C; VCE = 10V, IC = 1mA, f = 1kHz | min 0.1 · max 8 x 10-4 | 4 |
| Small Signal Current Gain hfe | TA = +25°C; VCE = 10V, IC = 1mA, f = 1kHz | min 40 · max 500 | 4 |
| Output Admittance hoe | TA = +25°C; VCE = 10V, IC = 1mA, f = 1kHz | min 1 · max 30 uS | 4 |
| Current Gain-Bandwidth Product fT | TA = +25°C; VCE = 10V, IC = 20mA, f = 100MHz | min 250 MHz | 4 |
| Delay Time td | TA = +25°C; VCC = 30V, IC = 150mA, VBE(off) = 2V, IB1 = 15mA | max 15 ns | 4 |
| Rise Time tr | TA = +25°C; VCC = 30V, IC = 150mA, VBE(off) = 2V, IB1 = 15mA | max 20 ns | 4 |
| Storage Time ts | TA = +25°C; VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA | max 225 ns | 4 |
| Fall Time tf | TA = +25°C; VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA | max 30 ns | 4 |
Ordering codes, by the datasheet
2- MMBT4401-7-F
- SOT23 · 7-inch reel, 8 mm tape, 3,000 pieces · p. 1
- MMBT4401-13-F
- SOT23 · 13-inch reel, 8 mm tape, 10,000 pieces · p. 1
Parameters
15- Collector - Emitter Voltage VCEO
- 40V
- Configuration
- Standalone
- Current - Collector Cutoff
- 100nA
- Current - Collector(Ic)
- 600mA
- DC Current Gain
- 80
- Emitter-Base Voltage(Vebo)
- 6V
- Junction Temperature(Max)
- 150℃
- Number
- 1 NPN
- Operating Temperature
- -55℃~+150℃
- Pd - Power Dissipation
- 350mW
- Thermal Resistance(Junction to Ambient)
- 403℃/W
- Thermal Resistance(Junction to Case)
- 120℃/W
- Transition frequency(fT)
- 250MHz
- Vce Saturation(VCE(sat))
- 400mV
- type
- NPN
Order codes
2- MMBT4401-7-FLCSC C151826
- MMBT4401-13-FLCSC C2760575
Pinout
3| Pin | Name | Type |
|---|---|---|
| 1 | B | Input |
| 2 | E | Passive |
| 3 | C | Passive |
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Is there a KiCad symbol and footprint for the MMBT4401?
Yes. The symbol is Pinmap_Generic:Q_NPN_1B_2E_3C and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the MMBT4401?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the MMBT4401 datasheet?
Diodes Incorporated publishes it: the Datasheet link on this page opens it.
Where can I order the MMBT4401?
JLCPCB lists it as part C151826, with 35,418 in stock; the sellers' links on this page open their listings.
What can replace the MMBT4401?
Parts like it in the library: the MMBT2907ALT1G by onsemi, the MMBT2222A by STMicroelectronics, the 2N5551S-RTK/P by KEC Semicon and the MMBT8050D by STMicroelectronics. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the MMBT4401?
10 boards in 10 repositories on GitHub; the most starred are listed on this page, with their KiCad files.
Parts like it
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