MMBT3904

Diodes Incorporated

-55℃~+150℃ 1 NPN 100 200mA 200mV 300MHz 350mW 40V 50nA 6V NPN SOT-23 Bipolar (BJT) ROHS

Extended

Datasheetdiodes/MMBT3904

Category: Bipolar (BJT)
Package: SOT-23
Pins: 3

Overview

The MMBT3904 is a bipolar made by Diodes Incorporated in a SOT-23 package with 3 pins. -55℃~+150℃ 1 NPN 100 200mA 200mV 300MHz 350mW 40V 50nA 6V NPN SOT-23 Bipolar (BJT) ROHS.

PCBKit's library has its KiCad symbol (Transistor_BJT:MMBT3904, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 286,572 are in stock at JLCPCB (part C94514).

Symbol

Transistor_BJT:MMBT3904From KiCad's library

Footprint

Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

Collector-emitter, most: 40 V · Collector-emitter voltage, absolute max · p. 2
Collector current, most: 200 mA · Collector current, max at TA = +25°C · p. 2
Junction, hottest: 150 °C · Junction temperature, max · p. 2
Junction to air (SOT23): 403 K/W · Junction to ambient, minimum recommended pad layout, Note 5 · p. 2
Junction to air (SOT23): 357 K/W · Junction to ambient, 15 mm x 15mm copper, Note 6 · p. 2
Current gain, least: 40 · DC current gain, min at IC = 100uA, VCE = 1.0V · p. 4
Current gain, least: 70 · DC current gain, min at IC = 1.0mA, VCE = 1.0V · p. 4
Current gain, least: 100 · DC current gain, min at IC = 10mA, VCE = 1.0V · p. 4
Current gain, least: 60 · DC current gain, min at IC = 50mA, VCE = 1.0V · p. 4
Current gain, least: 30 · DC current gain, min at IC = 100mA, VCE = 1.0V · p. 4

What it is and has

Transistor: 40V NPN small signal transistor · p. 1
Package: SOT23 · p. 1
Applications: Medium power amplification and switching · p. 1
Compliance: Totally lead-free and fully RoHS compliant · p. 1
Materials: Halogen and antimony free · p. 1
Moisture sensitivity: Level 1 per J-STD-020 · p. 1

Specifications

Parameter	Conditions	As printed	Page
Collector-Base Voltage VCBO	TA = +25°C	max 60 V	2
Collector-Emitter Voltage VCEO	TA = +25°C	max 40 V	2
Emitter-Base Voltage VEBO	TA = +25°C	max 6 V	2
Collector Current IC	TA = +25°C	max 200 mA	2
Power Dissipation PD	TA = +25°C; Note 5: minimum recommended pad layout, 1oz copper on single-sided FR4 PCB, still air, steady-state	max 310 mW	2
Power Dissipation PD	TA = +25°C; Note 6: 15 mm x 15mm 1oz copper, single-sided FR4 PCB, still air, steady-state	max 350 mW	2
Thermal Resistance, Junction to Ambient RθJA	TA = +25°C; Note 5: minimum recommended pad layout, 1oz copper on single-sided FR4 PCB, still air, steady-state	max 403 °C/W	2
Thermal Resistance, Junction to Ambient RθJA	TA = +25°C; Note 6: 15 mm x 15mm 1oz copper, single-sided FR4 PCB, still air, steady-state	max 357 °C/W	2
Thermal Resistance, Junction to Leads RθJL	TA = +25°C; Note 7: junction to solder-point at the end of the leads	max 350 °C/W	2
Operating and Storage Temperature Range TJ,TSTG		min -55 · max 150 °C	2
Electrostatic Discharge - Human Body Model ESD HBM	JEDEC Class 3A; JESD22-A114 and JESD22-A115	max 4000 V	2
Electrostatic Discharge - Machine Model ESD MM	JEDEC Class C; JESD22-A114 and JESD22-A115	max 400 V	2
Collector-Base Breakdown Voltage BVCBO	TA = +25°C; IC = 10uA, IE = 0	min 60 V	4
Collector-Emitter Breakdown Voltage (Note 9) BVCEO	TA = +25°C; IC = 10mA, IB = 0; pulse width ≤ 300us, duty cycle ≤ 2%	min 40 V	4
Emitter-Base Breakdown Voltage BVEBO	TA = +25°C; IE = 10uA, IC = 0	min 6 V	4
Collector Cut-Off Current ICEX	TA = +25°C; VCE = 30V, VEB(off) = 3.0V	max 50 nA	4
Base Cut-Off Current IBL	TA = +25°C; VCE = 30V, VEB(off) = 3.0V	max 50 nA	4
Emitter Base Cut-Off Current IEBO	TA = +25°C; VEB = 6V	max 50 nA	4
Collector-Base Cut-Off Current ICBO	TA = +25°C; VCB = 48V	max 50 nA	4
DC Current Gain hFE	TA = +25°C; IC = 100uA, VCE = 1.0V; Note 9	min 40 	4
DC Current Gain hFE	TA = +25°C; IC = 1.0mA, VCE = 1.0V; Note 9	min 70 	4
DC Current Gain hFE	TA = +25°C; IC = 10mA, VCE = 1.0V; Note 9	min 100 · max 300 	4
DC Current Gain hFE	TA = +25°C; IC = 50mA, VCE = 1.0V; Note 9	min 60 	4
DC Current Gain hFE	TA = +25°C; IC = 100mA, VCE = 1.0V; Note 9	min 30 	4
Collector-Emitter Saturation Voltage VCE(sat)	TA = +25°C; IC = 10mA, IB = 1.0mA; Note 9	max 0.2 V	4
Collector-Emitter Saturation Voltage VCE(sat)	TA = +25°C; IC = 50mA, IB = 5.0mA; Note 9	max 0.3 V	4
Base-Emitter Saturation Voltage VBE(sat)	TA = +25°C; IC = 10mA, IB = 1.0mA; Note 9	min 0.65 · max 0.85 V	4
Base-Emitter Saturation Voltage VBE(sat)	TA = +25°C; IC = 50mA, IB = 5.0mA; Note 9	max 0.95 V	4
Output Capacitance COBO	TA = +25°C; VCB = 5.0V, f = 1.0MHz, IE = 0	max 4 pF	4
Input Capacitance CIBO	TA = +25°C; VEB = 0.5V, f = 1.0MHz, IC = 0	max 8 pF	4
Input Impedance hIE	TA = +25°C; VCE = 10V, IC = 1.0mA, f = 1.0kHz	min 1 · max 10 kΩ	4
Voltage Feedback Ratio hRE	TA = +25°C; VCE = 10V, IC = 1.0mA, f = 1.0kHz	min 0.5 · max 8 x 10-4	4
Small Signal Current Gain hFE	TA = +25°C; VCE = 10V, IC = 1.0mA, f = 1.0kHz	min 100 · max 400 	4
Output Admittance hOE	TA = +25°C; VCE = 10V, IC = 1.0mA, f = 1.0kHz	min 1 · max 40 uS	4
Current Gain-Bandwidth Product fT	TA = +25°C; VCE = 20V, IC = 10mA, f = 100MHz	min 300 MHz	4
Noise Figure NF	TA = +25°C; VCE = 5.0V, IC = 100uA, RS = 1.0kΩ, f = 1.0kHz	max 5 dB	4
Delay Time td	TA = +25°C; VCC = 3.0V, IC = 10mA, VBE(OFF) = - 0.5V, IB1 = 1.0mA	max 35 ns	4
Rise Time tr	TA = +25°C; VCC = 3.0V, IC = 10mA, VBE(OFF) = - 0.5V, IB1 = 1.0mA	max 35 ns	4
Storage Time ts	TA = +25°C; VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA	max 200 ns	4
Fall Time tf	TA = +25°C; VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA	max 50 ns	4

Ordering codes, by the datasheet

MMBT3904-7-F: SOT23 · 7-inch reel, 8 mm tape, 3,000 per reel; marking K1N · p. 1
MMBT3904-13-F: SOT23 · 13-inch reel, 8 mm tape, 10,000 per reel; marking K1N · p. 1

Parameters

Collector - Emitter Voltage VCEO: 40V
Configuration: Standalone
Current - Collector Cutoff: 50nA
Current - Collector(Ic): 200mA
DC Current Gain: 100
Emitter-Base Voltage(Vebo): 6V
Junction Temperature(Max): 150℃
Number: 1 NPN
Operating Temperature: -55℃~+150℃
Pd - Power Dissipation: 310mW
Thermal Resistance(Junction to Ambient): 403℃/W
Transition frequency(fT): 300MHz
Vce Saturation(VCE(sat)): 200mV
type: NPN

Order codes

MMBT3904-13-FLCSC C5245608
MMBT3904-7-FLCSC C94514

Pinout

The pins of the MMBT3904
Pin	Name	Type
1	B	Input
2	E	Passive
3	C	Passive

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Questions

Is there a KiCad symbol and footprint for the MMBT3904?

Yes. The symbol is Transistor_BJT:MMBT3904 and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the MMBT3904?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the MMBT3904 datasheet?

Diodes Incorporated publishes it: the Datasheet link on this page opens it.

Where can I order the MMBT3904?

JLCPCB lists it as part C94514, with 286,572 in stock; the sellers' links on this page open their listings.

What can replace the MMBT3904?

Parts like it in the library: the S8050 by YONGYUTAI, the MMBTA92 by hongjiacheng, the MMBTA44 by hongjiacheng and the MMBTA42 by hongjiacheng. Check their datasheets: a part that fits the footprint may still differ in its ratings.