6 layers433.1 × 135.9 mm
DMN65D8L
Diodes IncorporatedExtended
-55℃~+150℃ 1 N-channel 22pF 2pF 310mA 3V 4Ω@5V 540mW 60V 870pC@10V SOT-23 MOSFETs ROHS
- Part id
- diodes/DMN65D8L
- Category
- MOSFETs
- Package
- SOT-23
- Pins
- 3
- In stock
- 51 at JLCPCB (C155341)
- Used on
- 4 open-source boards
Overview
The DMN65D8L is a MOSFET made by Diodes Incorporated in a SOT-23 package with 3 pins. -55℃~+150℃ 1 N-channel 22pF 2pF 310mA 3V 4Ω@5V 540mW 60V 870pC@10V SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_NMOS_1G_2S_3D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 51 are in stock at JLCPCB (part C155341). 4 open-source boards in 4 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
12- Drain-source, most
- 60 V · VDSS, absolute max · p. 2
- Gate-source, most
- 20 V · VGSS, absolute max magnitude · p. 2
- Drain current, most
- 310 mA · ID, continuous max at TA = +25°C, VGS = 10V, Note 6 · p. 2
- Drain current, most
- 270 mA · ID, continuous max at TA = +25°C, VGS = 5V, Note 6 · p. 2
- On resistance
- 3 Ω · max at VGS = 10V, ID = 0.115A · p. 2
- On resistance
- 4 Ω · max at VGS = 5V, ID = 0.115A · p. 2
- Gate threshold
- 2 V · max at VDS = VGS, ID = 250uA · p. 2
- Junction, hottest
- 150 °C · TJ, operating max · p. 2
- Junction to air (SOT23 (Standard))
- 348 K/W · junction to ambient, Note 6 · p. 2
- Junction to air (SOT23 (Standard))
- 241 K/W · junction to ambient, Note 5 · p. 2
- Junction to case (SOT23 (Standard))
- 91 K/W · junction to case, Note 5 · p. 2
- Edge
- 2.8 ns · rise time, typical; VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω · p. 2
What it is and has
2- Gate protection
- ESD protected to 1kV · p. 1
- Package
- SOT23 · p. 1
Specifications
34| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDSS | TA = +25°C | max 60 V | 2 |
| Gate-Source Voltage VGSS | TA = +25°C; ±20 V | max 20 V | 2 |
| Continuous Drain Current (Note 6) VGS = 10V ID | Steady State; TA = +25°C; Note 6 | max 310 mA | 2 |
| Continuous Drain Current (Note 6) VGS = 10V ID | Steady State; TA = +70°C; Note 6 | max 240 mA | 2 |
| Continuous Drain Current (Note 6) VGS = 5V ID | Steady State; TA = +25°C; Note 6 | max 270 mA | 2 |
| Continuous Drain Current (Note 6) VGS = 5V ID | Steady State; TA = +70°C; Note 6 | max 210 mA | 2 |
| Pulsed Drain Current (10us Pulse, Duty Cycle = 1%) IDM | TA = +25°C | max 800 mA | 2 |
| Maximum Body Diode Continuous Current (Note 6) IS | TA = +25°C; Note 6 | max 310 mA | 2 |
| Total Power Dissipation PD | TA = +25°C; Note 6 | max 370 mW | 2 |
| Total Power Dissipation PD | TA = +25°C; Note 5 | max 540 mW | 2 |
| Thermal Resistance, Junction to Ambient RJA | TA = +25°C; Note 6 | max 348 °C/W | 2 |
| Thermal Resistance, Junction to Ambient RJA | TA = +25°C; Note 5 | max 241 °C/W | 2 |
| Thermal Resistance, Junction to Case RJC | TA = +25°C; Note 5 | max 91 °C/W | 2 |
| Operating and Storage Temperature Range TJ, TSTG | min -55 · max 150 °C | 2 | |
| Drain-Source Breakdown Voltage BVDSS | TA = +25°C; VGS = 0V, ID = 250uA; Note 7 | min 60 V | 2 |
| Zero Gate Voltage Drain Current IDSS | TA = +25°C; VDS = 60V, VGS = 0V; Note 7 | max 1 uA | 2 |
| Gate-Body Leakage IGSS | TA = +25°C; VGS = ±20V, VDS = 0V; ±5 uA; Note 7 | max 5 uA | 2 |
| Gate Threshold Voltage VGS(TH) | TA = +25°C; VDS = VGS, ID = 250uA; Note 7 | min 1.2 · max 2 V | 2 |
| Static Drain-Source On-Resistance RDS(ON) | TA = +25°C; VGS = 10V, ID = 0.115A; Note 7 | typ 1.9 · max 3 Ω | 2 |
| Static Drain-Source On-Resistance RDS(ON) | TA = +25°C; VGS = 5V, ID = 0.115A; Note 7 | typ 2.2 · max 4 Ω | 2 |
| Forward Transconductance gFS | TA = +25°C; VDS = 10V, ID = 0.115A; Note 7 | min 80 · typ 290 ms | 2 |
| Diode Forward Voltage VSD | TA = +25°C; VGS = 0V, IS = 115mA; Note 7 | typ 0.8 · max 1.2 V | 2 |
| Input Capacitance Ciss | TA = +25°C; VDS = 25V, VGS = 0V, f = 1.0MHz; Note 8 | typ 22 pF | 2 |
| Output Capacitance Coss | TA = +25°C; VDS = 25V, VGS = 0V, f = 1.0MHz; Note 8 | typ 3.2 pF | 2 |
| Reverse Transfer Capacitance Crss | TA = +25°C; VDS = 25V, VGS = 0V, f = 1.0MHz; Note 8 | typ 2 pF | 2 |
| Gate Resistance Rg | TA = +25°C; VDS = 0V, VGS = 0V, f = 1.0MHz; Note 8 | typ 79.9 Ω | 2 |
| Total Gate Charge (VGS = 10V) Qg | TA = +25°C; VGS = 10V, VDS = 30V, ID = 150mA; Note 8 | typ 0.87 nC | 2 |
| Total Gate Charge (VGS = 4.5V) Qg | TA = +25°C; VDS = 30V, ID = 150mA; shared test-condition cell states VGS = 10V; Note 8 | typ 0.43 nC | 2 |
| Gate-Source Charge Qgs | TA = +25°C; VGS = 10V, VDS = 30V, ID = 150mA; Note 8 | typ 0.11 nC | 2 |
| Gate-Drain Charge Qgd | TA = +25°C; VGS = 10V, VDS = 30V, ID = 150mA; Note 8 | typ 0.11 nC | 2 |
| Turn-On Delay Time tD(ON) | TA = +25°C; VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω; Note 8 | typ 2.7 ns | 2 |
| Turn-On Rise Time tR | TA = +25°C; VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω; Note 8 | typ 2.8 ns | 2 |
| Turn-Off Delay Time tD(OFF) | TA = +25°C; VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω; Note 8 | typ 12.6 ns | 2 |
| Turn-Off Fall Time tF | TA = +25°C; VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25Ω; Note 8 | typ 7.3 ns | 2 |
Ordering codes, by the datasheet
2- DMN65D8L-7
- SOT23 (Standard) · 3,000 per Tape & Reel · p. 1
- DMN65D8L-13
- SOT23 (Standard) · 10,000 per Tape & Reel · p. 1
Open-source boards using it
4- 4 layers55.3 × 70.2 mm
FCC KiCAD
nikphillydev/NP1_DRONE
Building a quadcopter from scratch. Hardware and software. Developed using STM32 microcontroller and FreeRTOS.
116 parts3MIT - 4 layers48 × 46 mm
- 2 layers190 × 72 mm
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Questions
Is there a KiCad symbol and footprint for the DMN65D8L?
Yes. The symbol is Pinmap_Generic:Q_NMOS_1G_2S_3D and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the DMN65D8L?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the DMN65D8L datasheet?
Diodes Incorporated publishes it: the Datasheet link on this page opens it.
Where can I order the DMN65D8L?
JLCPCB lists it as part C155341, with 51 in stock; the sellers' links on this page open their listings.
What can replace the DMN65D8L?
Parts like it in the library: the 2N7002K by Diodes Incorporated, the BSS138P by Nexperia, the SI2308A by UMW and the SI2310 by GOODWORK. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the DMN65D8L?
4 boards in 4 repositories on GitHub; the most starred are listed on this page, with their KiCad files.