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MMBT2222AT on a board, in 3D

MMBT2222AT

Jiangsu Changjing Electronics Technology (CJ)

-55℃~+150℃ 1 NPN 1.2V 10nA 150mW 300MHz 35 40V 600mA 6V NPN SOT-523 Bipolar (BJT) ROHS

Extended
DatasheetJLCPCBLCSCcj/MMBT2222AT
Category
Bipolar (BJT)
Package
SOT-523
Pins
3

Overview

The MMBT2222AT is a bipolar made by Jiangsu Changjing Electronics Technology (CJ) in a SOT-523 package with 3 pins. -55℃~+150℃ 1 NPN 1.2V 10nA 150mW 300MHz 35 40V 600mA 6V NPN SOT-523 Bipolar (BJT) ROHS.

PCBKit's library has its KiCad symbol (Transistor_BJT:MMBT2222A, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 98,310 are in stock at JLCPCB (part C190608). 6 open-source boards in 5 repositories on GitHub use it.

Symbol

123
Transistor_BJT:MMBT2222AFrom KiCad's library

Footprint

123
Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

5
Collector-emitter, most
40 V · Collector-Emitter Voltage, absolute max · p. 1
Collector current, most
600 mA · Collector Current, max at Ta=25℃ · p. 1
Junction, hottest
150 °C · Junction Temperature, max · p. 1
Junction to air (SOT-523)
833 K/W · Thermal Resistance from Junction to Ambient · p. 1
Current gain, least
100 · DC current gain, min at VCE=10V, IC=150mA · p. 1

What it is and has

3
Package
SOT-523, plastic-encapsulated · p. 1
Complementary transistor
MMBT2907AT · p. 1
Marking
1P · p. 1

Specifications

27
ParameterConditionsAs printedPage
Collector-Base Voltage VCBOTa=25℃max 75 V1
Collector-Emitter Voltage VCEOTa=25℃max 40 V1
Emitter-Base Voltage VEBOTa=25℃max 6 V1
Collector Current ICTa=25℃max 600 mA1
Collector Power Dissipation PCTa=25℃max 150 mW1
Thermal Resistance from Junction to Ambient RΘJASOT-523, Ta=25℃max 833 ℃/W1
Junction Temperature Tjmax 150 ℃1
Storage Temperature Tstgmin -55 · max 150 ℃1
Collector-base breakdown voltage V(BR)CBOIC=10uA, IE=0min 75 V1
Collector-emitter breakdown voltage V(BR)CEOIC=10mA, IB=0min 40 V1
Emitter-base breakdown voltage V(BR)EBOIE=10uA, IC=0min 6 V1
Collector cut-off current ICEXVCE=60V, VEB(off)=3Vmax 10 nA1
DC current gain hFE(1)VCE=10V, IC=0.1mAmin 351
DC current gain hFE(2)VCE=10V, IC=1mAmin 501
DC current gain hFE(3)VCE=10V, IC=10mAmin 751
DC current gain hFE(4)VCE=10V, IC=150mAmin 100 · max 3001
DC current gain hFE(5)VCE=10V, IC=500mAmin 401
Collector-emitter saturation voltage VCE(sat)IC=150mA, IB=15mAmax 0.3 V1
Collector-emitter saturation voltage VCE(sat)IC=500mA, IB=50mAmax 1 V1
Collector-emitter saturation voltage VBE(sat)IC=150mA, IB=15mAmax 1.2 V1
Collector-emitter saturation voltage VBE(sat)IC=500mA, IB=50mAmax 2 V1
Transition frequency fTVCE=20V, IC=20mA, f=100MHzmin 300 MHz1
Collector output capacitance CobVCB=10V, IE=0, f=1MHzmax 8 pF1
Delay time tdVCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mAmax 10 ns1
Rise time trVCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mAmax 25 ns1
Storage time tsVCC=30V, IC=150mA, IB1=IB2=15mAmax 225 ns1
Fall time tfVCC=30V, IC=150mA, IB1=IB2=15mAmax 60 ns1

Pins, by the datasheet

3
1 BASE
Base. · p. 1
2 EMITTER
Emitter. · p. 1
3 COLLECTOR
Collector. · p. 1

Parameters

13
Collector - Emitter Voltage VCEO
40V
Current - Collector Cutoff
10nA
Current - Collector(Ic)
600mA
DC Current Gain
100
Emitter-Base Voltage(Vebo)
6V
Junction Temperature(Max)
150℃
Number
1 NPN
Operating Temperature
-55℃~+150℃
Pd - Power Dissipation
150mW
Thermal Resistance(Junction to Ambient)
833℃/W
Transition frequency(fT)
300MHz
Vce Saturation(VCE(sat))
1.2V
type
NPN

Order codes

1

Pinout

3
The pins of the MMBT2222AT
PinNameType
1BInput
2EPassive
3CPassive

Open-source boards using it

All 6
  • 4 layers90.2 × 95.9 mmMainboard v05, the printed circuit board in 3D

    Mainboard v05

    alxklso/ISP-cubesat

    This is the repo for the Isomer Space Program (ISP) 1U CoyoteSat CubeSat mission.

    255 parts1MIT
  • 4 layers98 × 98 mmAvionics Solar Panel Z-, the printed circuit board in 3D

    Avionics Solar Panel Z-

    cmu-argus/Avionics-Solar-Panel-Z-

    Solar panel board for Z- face.

    144 parts1
  • 4 layers90 × 87.6 mmProvesXEPS, the printed circuit board in 3D

    ProvesXEPS

    pleiades-cluster/Xmera-EPS

    The Official EPS Design on PROVES Xmera

    135 parts1
  • 2 layersProves prime mainboard v1, the printed circuit board in 3D

    Proves prime mainboard v1

    proveskit/proves-prime-mainboard

    Trying out a single board implementation for the PROVES Kit again!

    159 partsCERN-OHL-W-2.0
  • 4 layers88 × 94.5 mmBattery board v1, the printed circuit board in 3D

    Battery board v1

    proveskit/battery_board

    The battery and power management board for the PROVES Kit.

    119 parts2CERN-OHL-W-2.0
  • 4 layersProvesXEPS, the printed circuit board in 3D

    ProvesXEPS

    pleiades-cluster/Xmera-EPS

    The Official EPS Design on PROVES Xmera

    112 parts1

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Questions

Is there a KiCad symbol and footprint for the MMBT2222AT?

Yes. The symbol is Transistor_BJT:MMBT2222A and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the MMBT2222AT?

SOT-523, with 3 pins. Its footprint is drawn on this page.

Where is the MMBT2222AT datasheet?

Jiangsu Changjing Electronics Technology (CJ) publishes it: the Datasheet link on this page opens it.

Where can I order the MMBT2222AT?

JLCPCB lists it as part C190608, with 98,310 in stock; the sellers' links on this page open their listings.

What can replace the MMBT2222AT?

Parts like it in the library: the SS8050 by hongjiacheng, the MMBT5551 by hongjiacheng, the MMBT5401 by hongjiacheng and the MMBT5551 by Jiangsu Changjing Electronics Technology (CJ). Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the MMBT2222AT?

6 boards in 5 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

Parts like it

8