2 layers178 × 80 mm
Panel 1x5
flummer/dmm-sao
A small digital multimeter specifically for measuring SAO related stuff
326 parts28CC-BY-SA-4.0
Overview
The CJ2305 is a MOSFET made by Jiangsu Changjing Electronics Technology (CJ) in a SOT-23 package with 3 pins. -50℃~+150℃ 1 P-Channel 12V 190pF 350mW 4.1A 740pF 90mΩ@1.8V SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PMOS_1G_2S_3D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 576,265 are in stock at JLCPCB (part C8549). 19 open-source boards in 17 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
11- Drain-source, most
- 12 V · VDS, absolute maximum · p. 1
- Gate-source, most
- 8 V · VGS, absolute maximum magnitude, ±8 V · p. 1
- Drain current, most
- 4.1 A · ID, continuous maximum at Ta = 25 °C · p. 1
- Junction, hottest
- 150 °C · TJ, absolute maximum · p. 1
- Junction to air (SOT-23)
- 357 K/W · Junction to ambient, maximum, t ≤ 10 s · p. 1
- Gate threshold
- 900 mV · VGS(th), max at VDS = VGS, ID = -250 uA · p. 2
- On resistance
- 45 mΩ · Max at VGS = -4.5 V, ID = -3.5 A · p. 2
- On resistance
- 60 mΩ · Max at VGS = -2.5 V, ID = -3 A · p. 2
- On resistance
- 90 mΩ · Max at VGS = -1.8 V, ID = -2.0 A · p. 2
- Edge
- 10 ns · Typical fall time, VDD = -4 V, VGEN = -4.5 V, Rg = 1 Ω · p. 2
- Edge
- 11 ns · Typical rise time, VDD = -4 V, VGEN = -8 V, Rg = 1 Ω · p. 2
What it is and has
2- MOSFET technology
- TrenchFET Power MOSFET · p. 1
- Package
- SOT-23 · p. 1
Specifications
35| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDS | Ta=25℃ | max -12 V | 1 |
| Gate-Source Voltage VGS | Ta=25℃ | min -8 · max 8 V | 1 |
| Continuous Drain Current ID | Ta=25℃ | max -4.1 A | 1 |
| Continuous Source-Drain Diode Current IS | Ta=25℃ | max -0.8 A | 1 |
| Maximum Power Dissipation PD | Ta=25℃ | max 0.35 W | 1 |
| Thermal Resistance from Junction to Ambient(t≤10s) RθJA | SOT-23, Ta=25℃, t≤10s | max 357 ℃/W | 1 |
| Junction Temperature TJ | max 150 ℃ | 1 | |
| Storage Temperature TSTG | min -50 · max 150 ℃ | 1 | |
| Drain-source breakdown voltage V(BR)DSS | Ta =25 ℃; VGS = 0V, ID =-250uA | min -12 V | 2 |
| Gate-source threshold voltage VGS(th) | Ta =25 ℃; VDS =VGS, ID =-250uA | min -0.5 · max -0.9 V | 2 |
| Gate-source leakage IGSS | Ta =25 ℃; VDS =0V, VGS =±8V | max 100 nA | 2 |
| Zero gate voltage drain current IDSS | Ta =25 ℃; VDS =-8V, VGS =0V | max -1 uA | 2 |
| Drain-source on-state resistance RDS(on) | Ta =25 ℃; VGS =-4.5V, ID =-3.5A; pulse width ≤300us, duty cycle ≤2% | typ 30 · max 45 mΩ | 2 |
| Drain-source on-state resistance RDS(on) | Ta =25 ℃; VGS =-2.5V, ID =-3A; pulse width ≤300us, duty cycle ≤2% | typ 40 · max 60 mΩ | 2 |
| Drain-source on-state resistance RDS(on) | Ta =25 ℃; VGS =-1.8V,ID=-2.0A; pulse width ≤300us, duty cycle ≤2% | typ 60 · max 90 mΩ | 2 |
| Forward transconductance gfs | Ta =25 ℃; VDS =-5V, ID =-4.1A; pulse width ≤300us, duty cycle ≤2% | min 6 S | 2 |
| Input capacitance Ciss | Ta =25 ℃; VDS =-4V,VGS =0V,f =1MHz | typ 740 pF | 2 |
| Output capacitance Coss | Ta =25 ℃; VDS =-4V,VGS =0V,f =1MHz | typ 290 pF | 2 |
| Reverse transfer capacitance Crss | Ta =25 ℃; VDS =-4V,VGS =0V,f =1MHz | typ 190 pF | 2 |
| Total gate charge Qg | Ta =25 ℃; VDS =-4V,VGS =-4.5V, ID =-4.1A | typ 7.8 · max 15 nC | 2 |
| Total gate charge Qg | Ta =25 ℃; VDS =-4V,VGS =-2.5V, ID =-4.1A | typ 4.5 · max 9 nC | 2 |
| Gate-source charge Qgs | Ta =25 ℃; VDS =-4V,VGS =-2.5V, ID =-4.1A | typ 1.2 nC | 2 |
| Gate-drain charge Qgd | Ta =25 ℃; VDS =-4V,VGS =-2.5V, ID =-4.1A | typ 1.6 nC | 2 |
| Gate resistance Rg | Ta =25 ℃; f =1MHz | min 1.4 · typ 7 · max 14 Ω | 2 |
| Turn-on delay time td(on) | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | typ 13 · max 20 ns | 2 |
| Rise time tr | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | typ 35 · max 53 ns | 2 |
| Turn-off Delay time td(off) | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | typ 32 · max 48 ns | 2 |
| Fall time tf | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω | typ 10 · max 20 ns | 2 |
| Turn-on delay time td(on) | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | typ 5 · max 10 ns | 2 |
| Rise time tr | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | typ 11 · max 17 ns | 2 |
| Turn-off delay time td(off) | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | typ 22 · max 33 ns | 2 |
| Fall time tf | Ta =25 ℃; VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω | typ 16 · max 24 ns | 2 |
| Continuous source-drain diode current IS | TC=25℃ | max -1.4 A | 2 |
| Pulse diode forward current ISM | Ta =25 ℃; pulse width ≤300us, duty cycle ≤2% | max -10 A | 2 |
| Body ciode voltage VSD | Ta =25 ℃; IF=-3.3A | max -1.2 V | 2 |
Pins, by the datasheet
3- 1 GATE
- Gate. · p. 1
- 2 SOURCE
- Source. · p. 1
- 3 DRAIN
- Drain. · p. 1
Parameters
18- Current - Continuous Drain(Id)
- 4.1A
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 45mΩ@4.5V,3.5A
- Drain to Source Voltage
- 12V
- Gate Charge(Qg)
- 7.8nC
- Gate Threshold Voltage (Vgs(th))
- 900mV
- Gate Threshold Voltage (Vgs(th)@Id)
- 900mV@250μA
- Input Capacitance(Ciss)
- 740pF
- Junction Temperature(Max)
- 150℃
- Number
- 1 P-Channel
- Operating Temperature
- -50℃~+150℃
- Output Capacitance(Coss)
- 290pF
- Pd - Power Dissipation
- 350mW
- RDS(on)
- 90mΩ@1.8V
- Reverse Transfer Capacitance (Crss@Vds)
- 190pF
- Rise Time
- 10ns
- Thermal Resistance(Junction to Ambient)
- 357℃/W
- Type
- P-Channel
- Vgs
- ±8V
Order codes
1- CJ2305LCSC C8549
Pinout
3| Pin | Name | Type |
|---|---|---|
| 1 | G | Input |
| 2 | S | Passive |
| 3 | D | Passive |
Open-source boards using it
All 19- 2 layers41.4 × 34 mm
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Circle badge
bornhack/badge2025
This badge focuses on LoRa and wireless communication in general, as there are also WiFi and Bluetooth Low Energy included in the ESP32-C3 module.
45 parts3CC-BY-SA-4.0 - 2 layers110 × 89 mm
- 2 layers40 × 30.5 mm
- 2 layers430 × 118.4 mm
Show this part on your page
<iframe src="https://pcbkit.io/embed/parts/cj/CJ2305" title="CJ2305 in PCBKit" width="100%" height="480" style="border:0;border-radius:12px" allow="fullscreen" loading="lazy"></iframe><img src="https://pcbkit.io/embed/parts/cj/CJ2305.jpg" alt="CJ2305" width="1200" height="900">[](https://pcbkit.io/parts/cj/CJ2305)Questions
Is there a KiCad symbol and footprint for the CJ2305?
Yes. The symbol is Pinmap_Generic:Q_PMOS_1G_2S_3D and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the CJ2305?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the CJ2305 datasheet?
Jiangsu Changjing Electronics Technology (CJ) publishes it: the Datasheet link on this page opens it.
Where can I order the CJ2305?
JLCPCB lists it as part C8549, with 576,265 in stock; the sellers' links on this page open their listings.
What can replace the CJ2305?
Parts like it in the library: the AO3400 by GOODWORK, the AO3400A by Alpha & Omega Semiconductor, the AO3400A by UMW and the AO3401A by UMW. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the CJ2305?
19 boards in 17 repositories on GitHub; the most starred are listed on this page, with their KiCad files.
Parts like it
8
AO3400
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