2 layers30 × 30 mm
ReCamera Gimbal
Seeed-Studio/OSHW-reCamera-Series
reCamera is a series of open-source AI cameras.
123 parts495Apache-2.0
CJ2101
Jiangsu Changjing Electronics Technology (CJ)Extended
-50℃~+150℃ 1 P-Channel 1.4A 20V 210mΩ@1.8V 290mW 450mV 640pF 82pF SOT-323 MOSFETs ROHS
- Part id
- cj/CJ2101
- Category
- MOSFETs
- Package
- SOT-323
- Pins
- 3
- In stock
- 71,135 at JLCPCB (C52641)
- Used on
- 13 open-source boards
Overview
The CJ2101 is a MOSFET made by Jiangsu Changjing Electronics Technology (CJ) in a SOT-323 package with 3 pins. -50℃~+150℃ 1 P-Channel 1.4A 20V 210mΩ@1.8V 290mW 450mV 640pF 82pF SOT-323 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PMOS_1G_2S_3D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-323_SC-70, from KiCad's library), ready for a KiCad board. 71,135 are in stock at JLCPCB (part C52641). 13 open-source boards in 6 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
10- Drain-source, most
- 20 V · VDS, absolute maximum · p. 1
- Gate-source, most
- 8 V · VGS, absolute maximum magnitude, ±8.0 V · p. 1
- Drain current, most
- 1.4 A · ID, continuous maximum at Ta = 25 °C · p. 1
- Junction, hottest
- 150 °C · TJ, absolute maximum · p. 1
- Junction to air (SOT-323)
- 431 K/W · RθJA, junction to ambient · p. 1
- Gate threshold
- 700 mV · VGS(th), typical at VDS = VGS, ID = -250 uA · p. 2
- On resistance
- 100 mΩ · RDS(on), max at VGS = -4.5 V, ID = -1.0 A · p. 2
- On resistance
- 140 mΩ · RDS(on), max at VGS = -2.5 V, ID = -0.5 A · p. 2
- On resistance
- 210 mΩ · RDS(on), max at VGS = -1.8 V, ID = -0.3 A · p. 2
- Forward voltage
- 620 mV · Body diode VSD, typical at VGS = 0 V, IS = -0.3 A · p. 2
What it is and has
3- Channel type
- P-Channel MOSFET · p. 1
- Package
- SOT-323 · p. 1
- Technology
- Leading Trench Technology for Low RDS(on) · p. 1
Specifications
23| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDS | Ta=25℃ | max -20 V | 1 |
| Gate-Source Voltage VGS | Ta=25℃; rating is ±8.0 V | max 8 V | 1 |
| Continuous Drain Current ID | Ta=25℃ | max -1.4 A | 1 |
| Pulsed Drain Current (tp=10us) IDM | Ta=25℃; tp=10us | max -3 A | 1 |
| Power Dissipation PD | Ta=25℃ | max 0.29 W | 1 |
| Thermal Resistance from Junction to Ambient RθJA | SOT-323; Ta=25℃ | max 431 ℃/W | 1 |
| Junction Temperature TJ | max 150 ℃ | 1 | |
| Storage Temperature Tstg | min -50 · max 150 ℃ | 1 | |
| Drain-Source Breakdown Voltage VDSS | Ta =25 ℃; VGS = 0V, ID =-250uA | min -20 · typ -20 V | 2 |
| Gate-Source Leakage IGSS | Ta =25 ℃; VDS =0V, VGS =±8V; maximum is ±100 nA | max 100 nA | 2 |
| Zero Gate Voltage Drain Current IDSS | Ta =25 ℃; VDS =-20V, VGS =0V | max -1 uA | 2 |
| Gate-Source Threshold Voltage VGS(th) | Ta =25 ℃; VDS =VGS, ID =-250uA; pulse width ≤300us, duty cycle ≤2% | min -0.45 · typ -0.7 V | 2 |
| Drain-Source On-State Resistance RDS(on) | Ta =25 ℃; VGS =-4.5V, ID =-1.0A; pulse width ≤300us, duty cycle ≤2% | max 100 mΩ | 2 |
| Drain-Source On-State Resistance RDS(on) | Ta =25 ℃; VGS =-2.5V, ID =-0.5A; pulse width ≤300us, duty cycle ≤2% | max 140 mΩ | 2 |
| Drain-Source On-State Resistance RDS(on) | Ta =25 ℃; VGS =-1.8V, ID =-0.3A; pulse width ≤300us, duty cycle ≤2% | max 210 mΩ | 2 |
| Input Capacitance Ciss | Ta =25 ℃; VDS =-8.0V,VGS =0V,f =1MHz; note 3 | typ 640 pF | 2 |
| Output Capacitance Coss | Ta =25 ℃; VDS =-8.0V,VGS =0V,f =1MHz; note 3 | typ 120 pF | 2 |
| Reverse Transfer Capacitance Crss | Ta =25 ℃; VDS =-8.0V,VGS =0V,f =1MHz; note 3 | typ 82 pF | 2 |
| Turn-On Delay Time td(on) | VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2Ω; notes 2,3 | typ 6.2 ns | 2 |
| Rise Time tr | VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2Ω; notes 2,3 | typ 15 ns | 2 |
| Turn-Off Delay Time td(off) | VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2Ω; notes 2,3 | typ 26 ns | 2 |
| Fall Time tf | VGS=-4.5V,VDD=-4.0V, ID =-1.0A,RG=6.2Ω; notes 2,3 | typ 18 ns | 2 |
| Forward Diode Voltage VSD | Ta =25 ℃; VGS =0V,IS=-0.3A | typ -0.62 · max -1.2 V | 2 |
Pins, by the datasheet
3- 1 GATE
- Gate. · p. 1
- 2 SOURCE
- Source. · p. 1
- 3 DRAIN
- Drain. · p. 1
- 4 layers34 × 45 mm
Zigbee Air Sensor
acha666/Zigbee-Air-Sensor
Low power air sensor with E-ink screen and ESP32-H2
89 parts1GPL-3.0 - 2 layers41.2 × 80 mm
XIAO ePaper Display Board EE04 V1.2
doug-harriman/E-Display
Electronic display for calendars, weather, etc.
176 partsMIT - 6 layers20.7 × 59 mm
Best
sequoia-hope/circuit-composer
Board design as composition: verified chip packages, intent files and generated critical blocks for KiCad, between easy_pcb and ultraroute
238 partsMIT - 4 layers30 × 30 mm
ReCamera 2002 S4 GC2053 Sensor Board V1.0 SCH&PCB 250905
Seeed-Studio/OSHW-reCamera-Series
reCamera is a series of open-source AI cameras.
83 parts495Apache-2.0 - 4 layers30 × 30 mm
ReCamera B101 B2 v0.1
Seeed-Studio/OSHW-reCamera-Series
reCamera is a series of open-source AI cameras.
52 parts495Apache-2.0 - 4 layers30 × 30 mm
ReCamera B101 B4 Gyro v0.1
Seeed-Studio/OSHW-reCamera-Series
reCamera is a series of open-source AI cameras.
58 parts495Apache-2.0 - 4 layers30.7 × 30 mm
ReCamera B101 v1.2
Seeed-Studio/OSHW-reCamera-Series
reCamera is a series of open-source AI cameras.
56 parts495Apache-2.0
Parts like it
8
SI1308EDL
SC-70-3-55℃~+150℃ 1 N-channel 1.4nC@10V 1.5A 1.5V 105pF 11pF 132mΩ@10V 23pF 30V 400mW N-Channel SOT-323 MOSFETs ROHSVishay IntertechnologyMOSFETsDMP2165UW
SOT-323-55℃~+150℃ 1 P-Channel 180mΩ@1.8V 1V 2.5A 20V 3.5nC@4.5V 32pF 335pF 700mW 72pF P-Channel SOT-323 MOSFETs ROHSDiodes IncorporatedMOSFETsBSS816NWH6327
SOT-323-55℃~+150℃ 1 N-channel 1.4A 10pF 180pF 20V 240mΩ@1.8V 500mW 600pC@2.5V 67pF 750mV N-Channel SOT-323 MOSFETs ROHSInfineon TechnologiesMOSFETsSI1308EDL
SOT-323MOSFETsTECH PUBLICAO7400
SC-70-3-55℃~+150℃ 1 N-channel 1.4V 1.7A 18pF 235pF 30V 350mW 35pF 4.82nC@4.5V 85mΩ@10V SC-70-3 MOSFETs ROHSAlpha & Omega SemiconductorMOSFETsTPCJ2101
SOT-323-50℃~+150℃ 1 P-Channel 1.4A 120pF 140mΩ@2.5V 20V 290mW 450mV 640pF 82pF SOT-323 MOSFETs ROHSTECH PUBLICMOSFETsHXY2102EI
SOT-323-55℃~+150℃ 1 N-channel 1V 20V 2A 300mW 300pF 80pF 85mΩ@2.5V SOT-323 MOSFETs ROHSHXY MOSFETMOSFETsDMN3065LW
SOT-323-55℃~+150℃ 1 N-channel 1.5V 11.7nC@10V 30V 43.8pF 465pF 49.5pF 4A 770mW 85mΩ@2.5V N-Channel SOT-323 MOSFETs ROHSDiodes IncorporatedMOSFETs
Questions
Is there a KiCad symbol and footprint for the CJ2101?
Yes. The symbol is Pinmap_Generic:Q_PMOS_1G_2S_3D and the footprint Package_TO_SOT_SMD:SOT-323_SC-70, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the CJ2101?
SOT-323, with 3 pins. Its footprint is drawn on this page.
Where is the CJ2101 datasheet?
Jiangsu Changjing Electronics Technology (CJ) publishes it: the Datasheet link on this page opens it.
Where can I order the CJ2101?
JLCPCB lists it as part C52641, with 71,135 in stock; the sellers' links on this page open their listings.
What can replace the CJ2101?
Parts like it in the library: the SI1308EDL by Vishay Intertechnology, the DMP2165UW by Diodes Incorporated, the BSS816NWH6327 by Infineon Technologies and the SI1308EDL by TECH PUBLIC. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the CJ2101?
13 boards in 6 repositories on GitHub; the most starred are listed on this page, with their KiCad files.