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BMSN3139

BORN

1 P-Channel 1.1V 190mΩ@2.5V 20V 2A 300mW 405pF 55pF 75pF P-Channel SOT-323 MOSFETs ROHS

Extended
DatasheetJLCPCBLCSCborn/BMSN3139
Category
MOSFETs
Package
SOT-323
Pins
3

Overview

The BMSN3139 is a MOSFET made by BORN in a SOT-323 package with 3 pins. 1 P-Channel 1.1V 190mΩ@2.5V 20V 2A 300mW 405pF 55pF 75pF P-Channel SOT-323 MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PMOS_1G_2S_3D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-323_SC-70, from KiCad's library), ready for a KiCad board. 38,068 are in stock at JLCPCB (part C19078062). 1 open-source board in 1 repository on GitHub use it.

Symbol

Pinmap_Generic:Q_PMOS_1G_2S_3DFrom PCBKit's generic symbols

Footprint

123
Package_TO_SOT_SMD:SOT-323_SC-70From KiCad's library

From the datasheet

8
Drain-source, most
20 V · Drain-source voltage, absolute max · p. 2
Gate-source, most
12 V · Gate-source voltage magnitude, absolute max · p. 2
Drain current, most
500 mA · Continuous drain current at TA = 25 °C, max · p. 2
Junction, hottest
150 °C · Operating junction temperature, max · p. 2
Junction to air (SOT-323)
417 K/W · Junction-to-ambient thermal resistance, max · p. 2
Gate threshold
600 mV · Gate threshold at VDS = VGS, ID = -250uA, typical · p. 2
On resistance
580 mΩ · VGS = -4.5V, ID = -0.5A, typical · p. 2
On resistance
830 mΩ · VGS = -2.5V, ID = -0.3A, typical · p. 2

What it is and has

2
Process
Advanced trench process technology · p. 1
Package
SOT-323 surface mount · p. 1

Specifications

23
ParameterConditionsAs printedPage
Drain-Source Voltage VDSTA = 25 °Cmax -20 V2
Gate-Source Voltage VGSTA = 25 °Cmin -12 · max 12 V2
Continuous Drain Current IDTA = 25 °Cmax -0.5 A2
Pulsed drain current IDMTA = 25 °C; pulse width ≤300 us, duty cycle ≤2 %max -2 A2
Power dissipation PDTA = 25 °Cmax 0.3 W2
Thermal Resistance from Junction to Ambient RθJASOT-323; TA = 25 °C; guaranteed by design, not subject to production testingmax 417 ◦ C/W2
Operating Junction Temperature TJmax 150 ◦ C2
Storage Temperature Range Tstgmin -55 · max 150 ◦ C2
Drain-Source Breakdown Voltage V(BR)DSSTA = 25 °C; VGS = 0V, ID = -250uAmin -20 V2
Gate Threshold Voltage VGS(th)TA = 25 °C; VDS =VGS , ID = -250uAmin -0.4 · typ -0.6 · max -1.2 V2
Gate Body Leakage Current IGSSTA = 25 °C; VGS = ±10V, VDS = 0V; maximum magnitude ±10 uAmax 10 uA2
Zero Gate Voltage Drain Current IDSSTA = 25 °C; VDS = -20V, VGS = 0Vmax -1 uA2
Drain-Source On-State Resistance(1) RDS(on)TA = 25 °C; VGS = -4.5V, ID = -0.5A; pulse width ≤300 us, duty cycle ≤2 %typ 580 · max 850 mΩ2
Drain-Source On-State Resistance(1) RDS(on)TA = 25 °C; VGS=-2.5V, ID =-0.3A; pulse width ≤300 us, duty cycle ≤2 %typ 830 · max 1100 mΩ2
Forward tranconductance(1) gfSTA = 25 °C; VGS=-5V, ID =-0.5A; pulse width ≤300 us, duty cycle ≤2 %min 5 S2
Diode forward voltage VSDTA = 25 °C; VGS=0V, Isd = -0.5A; pulse width ≤300 us, duty cycle ≤2 %max -1.2 V2
Input Capacitance CissTA = 25 °C; VGS =0V,VDS =-10V,f=1MHz; guaranteed by design, not subject to production testingtyp 71 pF2
Output Capacitance CossTA = 25 °C; VGS =0V,VDS =-10V,f=1MHz; guaranteed by design, not subject to production testingtyp 20 pF2
Reverse Transfer Capacitance CrssTA = 25 °C; VGS =0V,VDS =-10V,f=1MHz; guaranteed by design, not subject to production testingtyp 15 pF2
Turn-On Delay Time td(on)TA = 25 °C; VDD=-10V,VGEN=-4.5V, IDS=-0.5A,RL=10Ω; guaranteed by design, not subject to production testingtyp 9 nS2
Turn-On Rise Time trTA = 25 °C; VDD=-10V,VGEN=-4.5V, IDS=-0.5A,RL=10Ω; guaranteed by design, not subject to production testingtyp 19 nS2
Turn-Off Delay Time td(off)TA = 25 °C; VDD=-10V,VGEN=-4.5V, IDS=-0.5A,RL=10Ω; guaranteed by design, not subject to production testingtyp 16 nS2
Turn-Off Fall Time tfTA = 25 °C; VDD=-10V,VGEN=-4.5V, IDS=-0.5A,RL=10Ω; guaranteed by design, not subject to production testingtyp 25 nS2

Ordering codes, by the datasheet

1
BMSN3139
SOT-323 · Marking 39K; base quantity 3K; tape and reel · p. 1

Parameters

12
Current - Continuous Drain(Id)
500mA
Drain to Source Voltage
20V
Gate Threshold Voltage (Vgs(th))
600mV
Input Capacitance(Ciss)
405pF
Junction Temperature(Max)
150℃
Number
1 P-Channel
Output Capacitance(Coss)
75pF
Pd - Power Dissipation
300mW
RDS(on)
190mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)
55pF
Thermal Resistance(Junction to Ambient)
417℃/W
Type
P-Channel

Order codes

1

Pinout

3
The pins of the BMSN3139
PinNameType
1GInput
2SPassive
3DPassive

Open-source boards using it

All 1
  • 4 layers17.8 × 33 mmNrf54l smol, the printed circuit board in 3D

    Nrf54l smol

    picafe/nrf54l_smol

    Ebyte E73-2G4M08S1F nRF54L15-based dev board with similar form factor to Pro Micro/Supermini

    29 parts

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Questions

Is there a KiCad symbol and footprint for the BMSN3139?

Yes. The symbol is Pinmap_Generic:Q_PMOS_1G_2S_3D and the footprint Package_TO_SOT_SMD:SOT-323_SC-70, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the BMSN3139?

SOT-323, with 3 pins. Its footprint is drawn on this page.

Where is the BMSN3139 datasheet?

BORN publishes it: the Datasheet link on this page opens it.

Where can I order the BMSN3139?

JLCPCB lists it as part C19078062, with 38,068 in stock; the sellers' links on this page open their listings.

What can replace the BMSN3139?

Parts like it in the library: the SI1308EDL by Vishay Intertechnology, the DMP2165UW by Diodes Incorporated, the BSS816NWH6327 by Infineon Technologies and the WNM2021-3/TR by WILLSEMI. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the BMSN3139?

1 board in 1 repository on GitHub; the most starred are listed on this page, with their KiCad files.

Parts like it

8