SI7232DN

Vishay IntertechnologyExtended

-55℃~+150℃ 1.22nF 13.5mΩ@4.5V 180pF 18nC@4.5V 1V 2 N-Channel 20V 23W 25A 80pF N-Channel PowerPAK1212-8 MOSFETs ROHS

Part id: vishay/SI7232DN
Category: MOSFETs
Package: PowerPAK1212-8
Pins: 10
In stock: 0 at JLCPCB (C144854)
Used on: 8 open-source boards

Overview

The SI7232DN is a MOSFET made by Vishay Intertechnology in a PowerPAK1212-8 package with 6 pins. -55℃~+150℃ 1.22nF 13.5mΩ@4.5V 180pF 18nC@4.5V 1V 2 N-Channel 20V 23W 25A 80pF N-Channel PowerPAK1212-8 MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Transistors:SI7232DN, from CERN's library) and its footprint (ICs And Semiconductors SMD:VISHAY_POWERPAK-1212-8-DUAL, from CERN's library), ready for a KiCad board. JLCPCB lists it (part C144854). 8 open-source boards in 6 repositories on GitHub use it.

Symbol

Transistors:SI7232DNFrom CERN's library

Footprint

ICs And Semiconductors SMD:VISHAY_POWERPAK-1212-8-DUALFrom CERN's library

From the datasheet

Drain-source, most: 20 V · Drain-source voltage, absolute max · p. 1
Gate-source, most: 8 V · Gate-source voltage, absolute max ±8 V · p. 1
Drain current, most: 25 A · Continuous drain current, max at TC = 25 °C; package limited · p. 1
Junction, hottest: 150 °C · Operating junction temperature, max · p. 1
On resistance: 16.4 mΩ · VGS = 4.5 V, ID = 10 A, max · p. 2
On resistance: 20 mΩ · VGS = 2.5 V, ID = 9 A, max · p. 2
On resistance: 24 mΩ · VGS = 1.8 V, ID = 8.2 A, max · p. 2
Gate threshold: 1 V · Gate-source threshold, max at VDS = VGS, ID = 250 uA · p. 2
Junction to air (PowerPAK® 1212-8 Dual): 38 K/W · Junction-to-ambient, typical at t ≤ 10 s on 1 inch square FR4 board · p. 1
Junction to case (PowerPAK® 1212-8 Dual): 4.3 K/W · Junction-to-case (drain), typical, steady state · p. 1

What it is and has

MOSFET technology: TrenchFET power MOSFET · p. 1
Configuration: Dual N-Channel 20 V (D-S) MOSFET · p. 1
Package: PowerPAK 1212-8 Dual · p. 1

Specifications

Parameter	Conditions	As printed	Page
Drain-Source Voltage VDS	TA = 25 °C	max 20 V	1
Gate-Source Voltage VGS	TA = 25 °C	min -8 · max 8 V	1
Continuous Drain Current (TJ = 150 °C) ID	TC = 25 °C; package limited	max 25 A	1
Continuous Drain Current (TJ = 150 °C) ID	TC = 70 °C	max 23.8 A	1
Continuous Drain Current (TJ = 150 °C) ID	TA = 25 °C; surface mounted on 1 inch square FR4 board; t = 10 s	max 10 A	1
Continuous Drain Current (TJ = 150 °C) ID	TA = 70 °C; surface mounted on 1 inch square FR4 board; t = 10 s	max 8 A	1
Pulsed Drain Current IDM	TA = 25 °C	max 40 A	1
Continuous Source-Drain Diode Current IS	TC = 25 °C	max 19 A	1
Continuous Source-Drain Diode Current IS	TA = 25 °C; surface mounted on 1 inch square FR4 board; t = 10 s	max 2.2 A	1
Single Pulse Avalanche Current IAS	L = 0.1 mH	max 15 A	1
Single Pulse Avalanche Energy EAS	L = 0.1 mH	max 11 mJ	1
Maximum Power Dissipation PD	TC = 25 °C	max 23 W	1
Maximum Power Dissipation PD	TC = 70 °C	max 14.8 W	1
Maximum Power Dissipation PD	TA = 25 °C; surface mounted on 1 inch square FR4 board; t = 10 s	max 2.6 W	1
Maximum Power Dissipation PD	TA = 70 °C; surface mounted on 1 inch square FR4 board; t = 10 s	max 1.7 W	1
Operating Junction and Storage Temperature Range TJ, Tstg		min -55 · max 150 °C	1
Soldering Recommendations (Peak Temperature)	See solder profile; manual soldering with a soldering iron is not recommended	max 260 °C	1
Maximum Junction-to-Ambient RthJA	PowerPAK 1212-8 Dual; t ≤ 10 s; surface mounted on 1 inch square FR4 board	typ 38 · max 48 °C/W	1
Maximum Junction-to-Ambient RthJA	PowerPAK 1212-8 Dual; steady state; surface mounted on 1 inch square FR4 board	max 94 °C/W	1
Maximum Junction-to-Case (Drain) RthJC	PowerPAK 1212-8 Dual; Steady State	typ 4.3 · max 5.4 °C/W	1
Drain-Source Breakdown Voltage VDS	VGS = 0 V, ID = 250 uA	min 20 V	2
VDS Temperature Coefficient VDS/TJ	ID = 250 uA	typ 22 mV/°C	2
VGS(th) Temperature Coefficient VGS(th)/TJ	ID = 250 uA	typ -3 mV/°C	2
Gate-Source Threshold Voltage VGS(th)	VDS = VGS , ID = 250 uA	min 0.4 · max 1 V	2
Gate-Source Leakage IGSS	VDS = 0 V, VGS = ± 8 V; maximum magnitude ±100 nA	max 100 nA	2
Zero Gate Voltage Drain Current IDSS	VDS = 20 V, VGS = 0 V	max 1 uA	2
Zero Gate Voltage Drain Current IDSS	VDS = 20 V, VGS = 0 V, TJ = 55 °C	max 10 uA	2
On-State Drain Current ID(on)	VDS ≥ 5 V, VGS = 10 V; pulse width ≤ 300 us, duty cycle ≤ 2 %	min 20 A	2
Drain-Source On-State Resistance RDS(on)	VGS = 4.5 V, ID = 10 A; pulse width ≤ 300 us, duty cycle ≤ 2 %	typ 0.0135 · max 0.0164 	2
Drain-Source On-State Resistance RDS(on)	VGS = 2.5 V, ID = 9 A; pulse width ≤ 300 us, duty cycle ≤ 2 %	typ 0.016 · max 0.02 	2
Drain-Source On-State Resistance RDS(on)	VGS = 1.8 V, ID = 8.2 A; pulse width ≤ 300 us, duty cycle ≤ 2 %	typ 0.019 · max 0.024 	2
Forward Transconductance gfs	VDS = 10 V, ID = 10 A; pulse width ≤ 300 us, duty cycle ≤ 2 %	typ 47 S	2
Input Capacitance Ciss	VDS = 10 V, VGS = 0 V, f = 1 MHz; guaranteed by design	typ 1220 pF	2
Output Capacitance Coss	VDS = 10 V, VGS = 0 V, f = 1 MHz; guaranteed by design	typ 180 pF	2
Reverse Transfer Capacitance Crss	VDS = 10 V, VGS = 0 V, f = 1 MHz; guaranteed by design	typ 80 pF	2
Total Gate Charge Qg	VDS = 15 V, VGS = 8 V, ID = 10 A; guaranteed by design	typ 21 · max 32 nC	2
Total Gate Charge Qg	VDS = 15 V, VGS = 4.5 V, ID = 10 A; guaranteed by design	typ 12 · max 18 nC	2
Gate-Source Charge Qgs	VDS = 15 V, VGS = 4.5 V, ID = 10 A; guaranteed by design	typ 2 nC	2
Gate-Drain Charge Qgd	VDS = 15 V, VGS = 4.5 V, ID = 10 A; guaranteed by design	typ 1.3 nC	2
Gate Resistance Rg	f = 1 MHz; guaranteed by design	typ 1.8 · max 3.6 	2
Turn-On Delay Time td(on)	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 ; guaranteed by design	typ 10 · max 15 ns	2
Rise Time tr	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 ; guaranteed by design	typ 10 · max 15 ns	2
Turn-Off Delay Time td(off)	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 ; guaranteed by design	typ 35 · max 55 ns	2
Fall Time tf	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 4.5 V, Rg = 1 ; guaranteed by design	typ 10 · max 15 ns	2
Turn-On Delay Time td(on)	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 8 V, Rg = 1 ; guaranteed by design	typ 10 · max 15 ns	2
Rise Time tr	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 8 V, Rg = 1 ; guaranteed by design	typ 10 · max 15 ns	2
Turn-Off Delay Time td(off)	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 8 V, Rg = 1 ; guaranteed by design	typ 25 · max 40 ns	2
Fall Time tf	VDD = 10 V, RL = 1.25 , ID ≅ 8 A, VGEN = 8 V, Rg = 1 ; guaranteed by design	typ 10 · max 15 ns	2
Continuous Source-Drain Diode Current IS	TC = 25 °C	max 19 A	2
Pulse Diode Forward Current ISM	TJ = 25 °C	max 40 A	2
Body Diode Voltage VSD	IS = 8 A, VGS = 0 V	typ 0.81 · max 1.2 V	2
Body Diode Reverse Recovery Time trr	IF = 8 A, dI/dt = 100 A/us, TJ = 25 °C	typ 20 · max 30 ns	2
Body Diode Reverse Recovery Charge Qrr	IF = 8 A, dI/dt = 100 A/us, TJ = 25 °C	typ 15 · max 25 nC	2
Reverse Recovery Fall Time ta	IF = 8 A, dI/dt = 100 A/us, TJ = 25 °C	typ 12.5 ns	2
Reverse Recovery Rise Time tb	IF = 8 A, dI/dt = 100 A/us, TJ = 25 °C	typ 7.5 ns	2

Ordering codes, by the datasheet

Si7232DN-T1-GE3: PowerPAK 1212-8 Dual · Lead (Pb)-free and halogen-free · p. 1

Parameters

Current - Continuous Drain(Id): 25A
Drain to Source Voltage: 20V
Gate Charge(Qg): 18nC@4.5V
Gate Threshold Voltage (Vgs(th)): 1V
Input Capacitance(Ciss): 1.22nF
Junction Temperature(Max): 150℃
Number: 2 N-Channel
Operating Temperature: -55℃~+150℃
Output Capacitance(Coss): 180pF
Pd - Power Dissipation: 23W
RDS(on): 13.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds): 80pF
Thermal Resistance(Junction to Ambient): 38℃/W
Thermal Resistance(Junction to Case): 4.3℃/W
Type: N-Channel
Vgs: ±8V

Order codes

SI7232DN-T1-GE3LCSC C144854

Pinout

The pins of the SI7232DN
Pin	Name	Type
1	S	Passive
2	G	Passive
3	S	Passive
4	G	Passive
D1	D	Passive
D2	D	Passive

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Open-source boards using it

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Terrapin-Rocket-Team/SRAD-Avionics
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Questions

Is there a KiCad symbol and footprint for the SI7232DN?

Yes. The symbol is Transistors:SI7232DN and the footprint ICs And Semiconductors SMD:VISHAY_POWERPAK-1212-8-DUAL, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the SI7232DN?

PowerPAK1212-8, with 6 pins. Its footprint is drawn on this page.

Where is the SI7232DN datasheet?

Vishay Intertechnology publishes it: the Datasheet link on this page opens it.

Where can I order the SI7232DN?

JLCPCB lists it as part C144854, with 0 in stock; the sellers' links on this page open their listings.

Which open-source boards use the SI7232DN?

8 boards in 6 repositories on GitHub; the most starred are listed on this page, with their KiCad files.