
TPA2012D2RTJT
Texas InstrumentsExtended
-40℃~+85℃ -55dB 0.11% 2 Pairs Differential Inputs 2-Channel 2.1Wx2@4Ω 2.5V~5.5V 9mA Class D Enable/shutdown function、Filterless architecture、ESD protection、Digitally programmable gain QFN-20-EP(4x4) Audio Amplifiers ROHS
- Part id
- ti/TPA2012D2RTJT
- Category
- Audio Amplifiers
- Package
- QFN-20-EP(4x4)
- Pins
- 21
- In stock
- 1 at JLCPCB (C116656)
- Used on
- 2 open-source boards
Overview
The TPA2012D2RTJT is an audio Amplifier made by Texas Instruments in a QFN-20-EP(4x4) package with 21 pins. -40℃~+85℃ -55dB 0.11% 2 Pairs Differential Inputs 2-Channel 2.1Wx2@4Ω 2.5V~5.5V 9mA Class D Enable/shutdown function、Filterless architecture、ESD protection、Digitally programmable gain QFN-20-EP(4x4) Audio Amplifiers ROHS.
PCBKit's library has its KiCad symbol (EasyEDA_Cloud:TPA2012D2RTJRG4, from EasyEDA) and its footprint (EasyEDA_Cloud:QFN-20_L4.0-W4.0-P0.5-TL-EP, from EasyEDA), ready for a KiCad board. 1 are in stock at JLCPCB (part C116656). 2 open-source boards in 2 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
14- Supply, least
- 2.5 V · AVDD, PVDD, recommended operating min; same voltage required · p. 4
- Supply, most
- 5.5 V · AVDD, PVDD, recommended operating max; same voltage required · p. 4
- Supply, absolute maximum
- 6 V · AVDD, PVDD, active mode absolute max · p. 4
- Supply, absolute maximum
- 7 V · AVDD, PVDD, shutdown mode absolute max · p. 4
- Works from
- -40 °C · operating free-air temperature min · p. 4
- Works up to
- 85 °C · operating free-air temperature max · p. 4
- Junction, hottest
- 150 °C · operating junction temperature absolute max · p. 4
- Takes working
- 6 mA · typical supply current at VDD = 5.5 V, no load or output filter · p. 5
- Takes asleep
- 1.5 µA · max supply current in shutdown mode · p. 5
- Switches at
- 300 kHz · typical switching frequency at VDD = 2.5 V to 5.5 V · p. 5
- Junction to air (RTJ (WQFN))
- 34.6 K/W · junction-to-ambient thermal resistance · p. 4
- Junction to case (RTJ (WQFN))
- 34.3 K/W · junction-to-case top thermal resistance · p. 4
- Junction to board (RTJ (WQFN))
- 11.5 K/W · junction-to-board thermal resistance · p. 4
- Junction to air (WQFN)
- 24 K/W · Junction to ambient, calculated from package derating factor · p. 23
What it is and has
12- Amplifier
- Stereo filter-free Class-D audio power amplifier · p. 1
- Output power
- WQFN: 2.1 W/channel into 4 Ω at 5 V · p. 1
- Output power
- WQFN: 1.4 W/channel into 8 Ω at 5 V · p. 1
- External components
- Only two required · p. 1
- Shutdown
- Independent control for each channel · p. 1
- Gain
- Selectable 6, 12, 18, and 24 dB · p. 1
- Shutdown pin bias
- Internal pulldown resistor · p. 1
- Protection
- Short-circuit and thermal protection · p. 1
- Package
- WQFN, 20 pins, 4.00 mm × 4.00 mm · p. 1
- Amplifier
- Stereo, filter-free Class-D audio power amplifier · p. 1
- Output power
- WQFN: 720 mW/channel into 8 Ω at 3.6 V · p. 1
- Protection
- Thermal shutdown above 150°C junction temperature · p. 23
Around it
4- cap 1 µF
- between PVDD and GND; Low-ESR ceramic supply decoupling capacitor; place as close as possible to PVDD. · p. 17
- cap 4.7 µF or greater
- between PVDD and GND; Optional lower-frequency supply filtering; place near the amplifier. · p. 17
- cap 0.1-µF
- between PVDD/AVDD and GND; Low-ESR ceramic supply decoupling; place within 2 mm of PVDD/AVDD pins. · p. 19
- cap 2.2-µF to 10-µF
- between PVDD/AVDD and GND; Additional supply charge reservoir on the PVDD/AVDD supply trace. · p. 19
Specifications
56| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Supply voltage, VSS (AVDD, PVDD) VSS | Active mode | min -0.3 · max 6 V | 4 |
| Supply voltage, VSS (AVDD, PVDD) VSS | Shutdown mode | min -0.3 · max 7 V | 4 |
| Input voltage, VI VI | Maximum is VDD + 0.3 V | min -0.3 V | 4 |
| Operating junction temperature, TJ TJ | min -40 · max 150 °C | 4 | |
| Storage temperature, Tstg Tstg | min -65 · max 150 °C | 4 | |
| Electrostatic discharge V(ESD) | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001; ±2000 V | max 2000 V | 4 |
| Electrostatic discharge V(ESD) | Charged-device model (CDM), per JEDEC specification JESD22-C101; ±1500 V | max 1500 V | 4 |
| Supply voltage, AVDD, PVDD VSS | min 2.5 · max 5.5 V | 4 | |
| High-level input voltage, SDL, SDR, G0, G1 VIH | min 1.3 V | 4 | |
| Low-level input voltage, SDL, SDR, G0, G1 VIL | max 0.35 V | 4 | |
| Operating free-air temperature TA | min -40 · max 85 °C | 4 | |
| Junction-to-ambient thermal resistance RθJA | RTJ (WQFN), 20 pins | typ 34.6 °C/W | 4 |
| Junction-to-case (top) thermal resistance RθJC(top) | RTJ (WQFN), 20 pins | typ 34.3 °C/W | 4 |
| Junction-to-board thermal resistance RθJB | RTJ (WQFN), 20 pins | typ 11.5 °C/W | 4 |
| Junction-to-top characterization parameter ψJT | RTJ (WQFN), 20 pins | typ 0.4 °C/W | 4 |
| Junction-to-board characterization parameter ψJB | RTJ (WQFN), 20 pins | typ 11.6 °C/W | 4 |
| Junction-to-case (bottom) thermal resistance RθJC(bot) | RTJ (WQFN), 20 pins | typ 3.2 °C/W | 4 |
| Output offset voltage (measured differentially) |VOO| | TA = 25°C; Inputs ac grounded, AV = 6 dB, VDD = 2.5 to 5.5 V | typ 5 · max 25 mV | 5 |
| Power supply rejection ratio PSRR | TA = 25°C; VDD = 2.5 to 5.5 V | typ -75 · max -55 dB | 5 |
| Common-mode input voltage Vicm | TA = 25°C; maximum is VDD – 0.8 V | min 0.5 V | 5 |
| Common-mode rejection ration CMRR | TA = 25°C; Inputs shorted together, VDD = 2.5 to 5.5 V | typ -69 · max -50 dB | 5 |
| High-level input current |IIH| | TA = 25°C; VDD = 5.5 V, VI = VDD | max 50 uA | 5 |
| Low-level input current |IIL| | TA = 25°C; VDD = 5.5 V, VI = 0 V | max 5 uA | 5 |
| Supply current IDD | TA = 25°C; VDD = 5.5 V, no load or output filter | typ 6 · max 9 mA | 5 |
| Supply current IDD | TA = 25°C; VDD = 3.6 V, no load or output filter | typ 5 · max 7.5 mA | 5 |
| Supply current IDD | TA = 25°C; VDD = 2.5 V, no load or output filter | typ 4 · max 6 mA | 5 |
| Supply current IDD | TA = 25°C; Shutdown mode | max 1.5 uA | 5 |
| Static drain-source on-state resistance rDS(on) | TA = 25°C; VDD = 5.5 V | typ 500 mΩ | 5 |
| Static drain-source on-state resistance rDS(on) | TA = 25°C; VDD = 3.6 V | typ 570 mΩ | 5 |
| Static drain-source on-state resistance rDS(on) | TA = 25°C; VDD = 2.5 V | typ 700 mΩ | 5 |
| Output impedance in shutdown mode | TA = 25°C; V(SDR, SDL)= 0.35 V | typ 2 kΩ | 5 |
| Switching frequency f(sw) | TA = 25°C; VDD = 2.5 V to 5.5 V | min 250 · typ 300 · max 350 kHz | 5 |
| Closed-loop voltage gain | TA = 25°C; G0, G1 = 0.35 V | min 5.5 · typ 6 · max 6.5 dB | 5 |
| Closed-loop voltage gain | TA = 25°C; G0 = VDD, G1 = 0.35 V | min 11.5 · typ 12 · max 12.5 dB | 5 |
| Closed-loop voltage gain | TA = 25°C; G0 = 0.35 V, G1 = VDD | min 17.5 · typ 18 · max 18.5 dB | 5 |
| Closed-loop voltage gain | TA = 25°C; G0, G1 = VDD | min 23.5 · typ 24 · max 24.5 dB | 5 |
| Output power (per channel) PO | TA = 25°C; RL = 8 Ω; VDD = 5 V, f = 1 kHz, THD = 10% | typ 1.4 W | 5 |
| Output power (per channel) PO | TA = 25°C; RL = 8 Ω; VDD = 3.6 V, f = 1 kHz, THD = 10% | typ 0.72 W | 5 |
| Output power (per channel) PO | TA = 25°C; RL = 4 Ω; VDD = 5 V, f = 1 kHz, THD = 10% | typ 2.1 W | 5 |
| Total harmonic distortion plus noise THD+N | TA = 25°C; RL = 8 Ω; PO = 1 W, VDD = 5 V, AV = 6 dB, f = 1 kHz | typ 0.14 % | 5 |
| Total harmonic distortion plus noise THD+N | TA = 25°C; RL = 8 Ω; PO = 0.5 W, VDD = 5 V, AV = 6 dB, f = 1 kHz | typ 0.11 % | 5 |
| Channel crosstalk | TA = 25°C; RL = 8 Ω; f = 1 kHz | typ -85 dB | 5 |
| Supply ripple rejection ratio kSVR | TA = 25°C; RL = 8 Ω; VDD = 5 V, AV = 6 dB, f = 217 Hz | typ -77 dB | 5 |
| Supply ripple rejection ratio kSVR | TA = 25°C; RL = 8 Ω; VDD = 3.6 V, AV = 6 dB, f = 217 Hz | typ -73 dB | 5 |
| Common mode rejection ratio CMRR | TA = 25°C; RL = 8 Ω; VDD = 3.6 V, VIC = 1 Vpp, f = 217 Hz | typ -69 dB | 5 |
| Input impedance | TA = 25°C; RL = 8 Ω; Av = 6 dB | typ 28.1 kΩ | 5 |
| Input impedance | TA = 25°C; RL = 8 Ω; Av = 12 dB | typ 17.3 kΩ | 5 |
| Input impedance | TA = 25°C; RL = 8 Ω; Av = 18 dB | typ 9.8 kΩ | 5 |
| Input impedance | TA = 25°C; RL = 8 Ω; Av = 24 dB | typ 5.2 kΩ | 5 |
| Start-up time from shutdown | TA = 25°C; RL = 8 Ω; VDD = 3.6 V | typ 3.5 ms | 5 |
| Output voltage noise Vn | TA = 25°C; RL = 8 Ω; VDD = 3.6 V, f = 20 to 20 kHz, inputs are ac grounded, AV = 6 dB; No weighting | typ 35 uV | 5 |
| Output voltage noise Vn | TA = 25°C; RL = 8 Ω; VDD = 3.6 V, f = 20 to 20 kHz, inputs are ac grounded, AV = 6 dB; A weighting | typ 27 uV | 5 |
| POWER RATING | RTJ; TA = 25°C | max 5.2 W | 5 |
| DERATING FACTOR | RTJ | typ 41.6 mW/°C | 5 |
| POWER RATING | RTJ; TA = 75°C | max 3.12 W | 5 |
| POWER RATING | RTJ; TA = 85°C | max 2.7 W | 5 |
Pins, by the datasheet
21- 1 G1
- Gain select (MSB). · p. 3
- 2 OUTL+
- Left channel positive differential output. · p. 3
- 3 PVDD
- Power supply; must be the same voltage as AVDD. · p. 3
- 4 PGND
- Power ground. · p. 3
- 5 OUTL–
- Left channel negative differential output. · p. 3
- 6 NC
- No internal connection. · p. 3
- 7 SDL
- Left channel shutdown terminal, active low. · p. 3
- 8 SDR
- Right channel shutdown terminal, active low. · p. 3
- 9 AVDD
- Analog supply; must be the same voltage as PVDD. · p. 3
- 10 NC
- No internal connection. · p. 3
- 11 OUTR–
- Right channel negative differential output. · p. 3
- 12 PGND
- Power ground. · p. 3
- 13 PVDD
- Power supply; must be the same voltage as AVDD. · p. 3
- 14 OUTR+
- Right channel positive differential output. · p. 3
- 15 G0
- Gain select (LSB). · p. 3
- 16 INR+
- Right channel positive input. · p. 3
- 17 INR–
- Right channel negative input. · p. 3
- 18 AGND
- Analog ground. · p. 3
- 19 INL–
- Left channel negative input. · p. 3
- 20 INL+
- Left channel positive input. · p. 3
- Thermal Pad Thermal Pad
- Connect the thermal pad of the WQFN package to PCB GND. · p. 3
Ordering codes, by the datasheet
11- TPA2012D2RTJR
- QFN (RTJ) | 20 · 3000, LARGE T&R; Level-1-260C-UNLIM; -40 to 85°C · p. 25
- TPA2012D2RTJR.B
- QFN (RTJ) | 20 · 3000, LARGE T&R; Level-1-260C-UNLIM; -40 to 85°C · p. 25
- TPA2012D2RTJRG4
- QFN (RTJ) | 20 · 3000, LARGE T&R; Level-2-260C-1 YEAR; -40 to 85°C · p. 25
- TPA2012D2RTJRG4.B
- QFN (RTJ) | 20 · 3000, LARGE T&R; Level-2-260C-1 YEAR; -40 to 85°C · p. 25
- TPA2012D2RTJT
- QFN (RTJ) | 20 · 250, SMALL T&R; Level-2-260C-1 YEAR; -40 to 85°C · p. 25
- TPA2012D2RTJT.B
- QFN (RTJ) | 20 · 250, SMALL T&R; Level-2-260C-1 YEAR; -40 to 85°C · p. 25
- TPA2012D2RTJTG4
- QFN (RTJ) | 20 · 250, SMALL T&R; Level-2-260C-1 YEAR; -40 to 85°C · p. 25
- TPA2012D2YZHR
- DSBGA (YZH) | 16 · 3000, LARGE T&R; SNAGCU ball material; Level-1-260C-UNLIM; -40 to 85°C · p. 25
- TPA2012D2YZHR.B
- DSBGA (YZH) | 16 · 3000, LARGE T&R; SNAGCU ball material; Level-1-260C-UNLIM; -40 to 85°C · p. 25
- TPA2012D2YZHT
- DSBGA (YZH) | 16 · 250, SMALL T&R; SNAGCU ball material; Level-1-260C-UNLIM; -40 to 85°C · p. 25
- TPA2012D2YZHT.B
- DSBGA (YZH) | 16 · 250, SMALL T&R; SNAGCU ball material; Level-1-260C-UNLIM; -40 to 85°C · p. 25
Open-source boards using it
2- 2 layers54.6 × 89.5 mm

- 4 layers123.2 × 125.7 mm

Parts like it
1Questions
Is there a KiCad symbol and footprint for the TPA2012D2RTJT?
Yes. The symbol is EasyEDA_Cloud:TPA2012D2RTJRG4 and the footprint EasyEDA_Cloud:QFN-20_L4.0-W4.0-P0.5-TL-EP, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the TPA2012D2RTJT?
QFN-20-EP(4x4), with 21 pins. Its footprint is drawn on this page.
Where is the TPA2012D2RTJT datasheet?
Texas Instruments publishes it: the Datasheet link on this page opens it.
Where can I order the TPA2012D2RTJT?
JLCPCB lists it as part C116656, with 1 in stock; the sellers' links on this page open their listings.
What can replace the TPA2012D2RTJT?
Parts like it in the library: the TPA6130A2RTJR by Texas Instruments. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the TPA2012D2RTJT?
2 boards in 2 repositories on GitHub; the most starred are listed on this page, with their KiCad files.