2 layers69.1 × 53.8 mm
INA828ID
Texas Instruments
-18V~-2.25V、2.25V~18V -40℃~+125℃ 0.025% 1 1.2V/us 100dB 120dB 12us 150pA 150pA 18mA 1V/V~1000V/V 20uV 2MHz 4.5V~36V 500nV/℃ 600uA 7nV/√Hz@1kHz External resistor gain、Overvoltage protection、EMI filtering/RF suppression SOIC-8 Instrumentation Amplifiers ROHS
Extended
- Category
- Instrumentation Amplifiers
- Package
- SOIC-8
- Pins
- 8
Overview
The INA828ID is an instrumentation Amplifier made by Texas Instruments in a SOIC-8 package with 8 pins. -18V~-2.25V、2.25V~18V -40℃~+125℃ 0.025% 1 1.2V/us 100dB 120dB 12us 150pA 150pA 18mA 1V/V~1000V/V 20uV 2MHz 4.5V~36V 500nV/℃ 600uA 7nV/√Hz@1kHz External resistor gain、Overvoltage protection、EMI filtering/RF suppression SOIC-8 Instrumentation Amplifiers ROHS.
PCBKit's library has its KiCad symbol (Operational Amplifiers:INA828, from CERN's library) and its footprint (Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, from KiCad's library), ready for a KiCad board. 1,107 are in stock at JLCPCB (part C544342). 5 open-source boards in 4 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
14- Supply, least
- 4.5 V · +VS, single supply recommended min · p. 4
- Supply, most
- 36 V · +VS, single supply recommended max · p. 4
- Supply, least
- 2.25 V · +VS/–VS, dual supply magnitude recommended min · p. 4
- Supply, most
- 18 V · +VS/–VS, dual supply magnitude recommended max · p. 4
- Works from
- -40 °C · specified operating temperature min · p. 4
- Works up to
- 125 °C · specified operating temperature max · p. 4
- Works from
- -50 °C · operating free-air temperature min · p. 4
- Works up to
- 150 °C · operating free-air temperature max · p. 4
- Junction, hottest
- 175 °C · junction temperature absolute max · p. 4
- Takes working
- 600 µA · quiescent current typical, VIN = 0 V, VS = ±15 V · p. 6
- Takes at most
- 850 µA · quiescent current max, TA = –40°C to +125°C · p. 6
- Junction to air (D (SOIC))
- 119.6 K/W · junction-to-ambient thermal resistance · p. 4
- Junction to case (D (SOIC))
- 66.3 K/W · junction-to-case top thermal resistance · p. 4
- Junction to board (D (SOIC))
- 61.9 K/W · junction-to-board thermal resistance · p. 4
What it is and has
7- Input offset voltage
- 50 µV maximum · p. 1
- Gain drift
- 5 ppm/°C (G = 1), 50 ppm/°C (G > 1) · p. 1
- Noise
- 7 nV/√Hz · p. 1
- Bandwidth
- 2 MHz (G = 1), 260 kHz (G = 100) · p. 1
- Capacitive load stability
- 1 nF · p. 1
- Protection
- Inputs protected up to ±40 V · p. 1
- Package
- 8-Pin SOIC · p. 1
Around it
2- cap 0.1 µF
- between +VS and GND; Low-ESR ceramic bypass capacitor; place as close to the device as possible. · p. 29
- res 10.5 NŸ
- between RG (1) and RG (8); RG in the Figure 68 PLC input example; value reproduced as extracted. · p. 26
Specifications
71| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Supply voltage | Over operating free-air temperature range | min -18 · max 18 V | 4 |
| Signal input pins | Voltage; over operating free-air temperature range | min -40 · max 40 V | 4 |
| Signal input pins | REF pin; over operating free-air temperature range | min -18 · max 18 V | 4 |
| Temperature TA | Operating | min -50 · max 150 °C | 4 |
| Temperature TJ | Junction | max 175 °C | 4 |
| Temperature Tstg | Storage | min -65 · max 150 °C | 4 |
| Electrostatic discharge V(ESD) | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001; value ±1500 V | max 1500 V | 4 |
| Electrostatic discharge V(ESD) | Charged-device model (CDM), per JEDEC specification JESD22-C101; value ±750 V | max 750 V | 4 |
| Supply voltage | Single supply | min 4.5 · max 36 V | 4 |
| Supply voltage | Dual supply; limits are ±2.25 V and ±18 V | min 2.25 · max 18 V | 4 |
| Specified temperature | min -40 · max 125 °C | 4 | |
| Operating temperature | min -50 · max 150 °C | 4 | |
| Junction-to-ambient thermal resistance RθJA | INA828, D (SOIC), 8 PINS | typ 119.6 °C/W | 4 |
| Junction-to-case (top) thermal resistance RθJC(top) | INA828, D (SOIC), 8 PINS | typ 66.3 °C/W | 4 |
| Junction-to-board thermal resistance RθJB | INA828, D (SOIC), 8 PINS | typ 61.9 °C/W | 4 |
| Junction-to-top characterization parameter ψJT | INA828, D (SOIC), 8 PINS | typ 20.5 °C/W | 4 |
| Junction-to-board characterization parameter ψJB | INA828, D (SOIC), 8 PINS | typ 61.4 °C/W | 4 |
| Input stage offset voltage VOSI | G = 100, RTI; TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V | typ 20 · max 50 uV | 5 |
| Input stage offset voltage VOSI | vs temperature, TA = –40°C to +125°C | max 0.5 uV/°C | 5 |
| Output stage offset voltage VOSO | G = 1, RTI | typ 50 · max 250 uV | 5 |
| Output stage offset voltage VOSO | vs temperature, TA = –40°C to +125°C | max 5 uV/°C | 5 |
| Power-supply rejection ratio PSRR | G = 1, RTI | min 110 · typ 120 dB | 5 |
| Power-supply rejection ratio PSRR | G = 10, RTI | min 114 · typ 130 dB | 5 |
| Power-supply rejection ratio PSRR | G = 100, RTI | min 130 · typ 135 dB | 5 |
| Power-supply rejection ratio PSRR | G = 1000, RTI | min 136 · typ 140 dB | 5 |
| RFI filter, –3-dB frequency | typ 53 MHz | 5 | |
| Input overvoltage range | TA = –40°C to +125°C; ±40 V | max 40 V | 5 |
| Common-mode rejection ratio CMRR | At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 1 | min 90 · typ 100 dB | 5 |
| Common-mode rejection ratio CMRR | At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 10 | min 110 · typ 120 dB | 5 |
| Common-mode rejection ratio CMRR | At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 100 | min 130 · typ 140 dB | 5 |
| Common-mode rejection ratio CMRR | At dc to 60 Hz, RTI, VCM = (V–) + 2 V to (V+) – 2 V, G = 1000 | min 140 · typ 145 dB | 5 |
| Input bias current IB | VCM = VS / 2 | typ 0.15 · max 0.6 nA | 5 |
| Input bias current IB | TA = –40°C to +125°C | max 2 nA | 5 |
| Input offset current IOS | VCM = VS / 2 | typ 0.15 · max 0.6 nA | 5 |
| Input offset current IOS | TA = –40°C to +125°C | max 2 nA | 5 |
| Input stage voltage noise eNI | f = 1 kHz, G = 100, RS = 0 Ω | typ 7 nV/√Hz | 5 |
| Input stage voltage noise eNI | fB = 0.1 Hz to 10 Hz, G = 100, RS = 0 Ω | typ 0.14 uVPP | 5 |
| Output stage voltage noise eNO | f = 1 kHz, RS = 0 Ω | typ 90 nV/√Hz | 5 |
| Output stage voltage noise eNO | fB = 0.1 Hz to 10 Hz, RS = 0 Ω | typ 7.7 uVPP | 5 |
| Noise current In | f = 1 kHz | typ 170 fA/√Hz | 5 |
| Noise current In | fB = 0.1 Hz to 10 Hz, G = 100 | typ 4.7 pAPP | 5 |
| Range of gain | min 1 · max 1000 V/V | 5 | |
| Gain error GE | G = 1, VO = ±10 V; values are ± | typ 0.005 · max 0.025 % | 5 |
| Gain error GE | G = 10, VO = ±10 V; values are ± | typ 0.025 · max 0.15 % | 5 |
| Gain error GE | G = 100, VO = ±10 V; values are ± | typ 0.025 · max 0.15 % | 5 |
| Gain error GE | G = 1000, VO = ±10 V; value is ± | typ 0.05 % | 5 |
| Gain vs temperature | G = 1, TA = –40°C to +125°C; value is ± | max 5 ppm/°C | 5 |
| Gain vs temperature | G > 1, TA = –40°C to +125°C; value is ±; excludes effects of external RG | max 50 ppm/°C | 5 |
| Gain nonlinearity | G = 1 to 10, VO = –10 V to +10 V, RL = 10 kΩ | typ 1 · max 10 ppm | 6 |
| Gain nonlinearity | G = 100, VO = –10 V to +10 V, RL = 10 kΩ | max 15 ppm | 6 |
| Gain nonlinearity | G = 1000, VO = –10 V to +10 V, RL = 10 kΩ | max 20 ppm | 6 |
| Gain nonlinearity | G = 1 to 100, VO = –10 V to +10 V, RL = 2 kΩ | typ 30 ppm | 6 |
| Load capacitance stability | typ 1000 pF | 6 | |
| Closed-loop output impedance ZO | f = 10 kHz | typ 1.3 Ω | 6 |
| Short-circuit current ISC | Continuous to VS / 2; value is ± | typ 18 mA | 6 |
| Bandwidth, –3 dB BW | G = 1 | typ 2 MHz | 6 |
| Bandwidth, –3 dB BW | G = 10 | typ 640 kHz | 6 |
| Bandwidth, –3 dB BW | G = 100 | typ 260 kHz | 6 |
| Bandwidth, –3 dB BW | G = 1000 | typ 33 kHz | 6 |
| Slew rate SR | G = 1, VO = ±10 V | typ 1.2 V/us | 6 |
| Settling time tS | 0.01%, G = 1 to 100, VSTEP = 10 V | typ 12 us | 6 |
| Settling time tS | 0.01%, G = 1000, VSTEP = 10 V | typ 40 us | 6 |
| Settling time tS | 0.001%, G = 1 to 100, VSTEP = 10 V | typ 16 us | 6 |
| Settling time tS | 0.001%, G = 1000, VSTEP = 10 V | typ 50 us | 6 |
| Input impedance RIN | Reference input | typ 40 kΩ | 6 |
| Gain to output | Reference input | typ 1 V/V | 6 |
| Reference gain error | Reference input | typ 0.01 % | 6 |
| Power-supply voltage VS | Single supply | min 4.5 · max 36 V | 6 |
| Power-supply voltage VS | Dual supply; limits are ±2.25 V and ±18 V | min 2.25 · max 18 V | 6 |
| Quiescent current IQ | VIN = 0 V; TA = 25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, G = 1 | typ 600 · max 650 uA | 6 |
| Quiescent current IQ | vs temperature, TA = –40°C to +125°C | max 850 uA | 6 |
Pins, by the datasheet
8- 1 RG
- Gain setting pin; place a gain resistor between pin 1 and pin 8. · p. 3
- 2 –IN
- Negative (inverting) input. · p. 3
- 3 +IN
- Positive (noninverting) input. · p. 3
- 4 –VS
- Negative supply. · p. 3
- 5 REF
- Reference input; must be driven by a low impedance source. · p. 3
- 6 OUT
- Output. · p. 3
- 7 +VS
- Positive supply. · p. 3
- 8 RG
- Gain setting pin; place a gain resistor between pin 1 and pin 8. · p. 3
Ordering codes, by the datasheet
6- INA828ID
- SOIC (D), 8 pins · 75 per tube; operating temperature −40 to 125°C · p. 32
- INA828ID.B
- SOIC (D), 8 pins · 75 per tube; operating temperature −40 to 125°C · p. 32
- INA828IDG4
- SOIC (D), 8 pins · 75 per tube; operating temperature −40 to 125°C · p. 32
- INA828IDG4.B
- SOIC (D), 8 pins · 75 per tube; operating temperature −40 to 125°C · p. 32
- INA828IDR
- SOIC (D), 8 pins · 2500 per large tape and reel; operating temperature −40 to 125°C · p. 32
- INA828IDR.B
- SOIC (D), 8 pins · 2500 per large tape and reel; operating temperature −40 to 125°C · p. 32
Parameters
26- -3dB Bandwidth
- 2MHz
- Common Mode Rejection Ratio(CMRR)
- 100dB
- Current - Supply
- 600uA
- Current - Supply(Max)
- 850uA
- Dual Supply
- -18V~-2.25V
- Features
- EMI filtering/RF suppression
- Gain Error
- 0.025%
- Ib - Input Bias Current
- 150pA
- Input Offset Current(Ios)
- 150pA
- Input Offset Voltage Drift(Vos TC)
- 500nV/℃
- Input Voltage Noise Density
- 7nV/√Hz@1kHz
- Junction Temperature(Max)
- 175℃
- Number of Channels
- 1
- Operating Temperature
- -50℃~+150℃
- Output Current
- 18mA
- Power Supply Rejection Ratio (PSRR)
- 120dB
- Quiescent Current(Iq)
- 600uA
- Settling time
- 12us
- Single Supply
- 4.5V~36V
- Slew Rate
- 1.2V/us
- Thermal Resistance(Junction to Ambient)
- 119.6℃/W
- Thermal Resistance(Junction to Board)
- 61.9℃/W
- Thermal Resistance(Junction to Case)
- 66.3℃/W
- Voltage - Supply
- 2.25V~36V
- Voltage Gain
- 1V/V~1000V/V
- Vos - Input Offset Voltage
- 20uV
Order codes
2- INA828IDLCSC C2859700
- INA828IDRLCSC C544342
Pinout
8| Pin | Name | Type |
|---|---|---|
| 1 | RG | Input |
| 2 | VIN- | Input |
| 3 | VIN+ | Input |
| 4 | V- | Power in |
| 5 | REF | Output |
| 6 | VO | Output |
| 7 | V+ | Power in |
| 8 | RG | Input |
Open-source boards using it
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Is there a KiCad symbol and footprint for the INA828ID?
Yes. The symbol is Operational Amplifiers:INA828 and the footprint Package_SO:SOIC-8_3.9x4.9mm_P1.27mm, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the INA828ID?
SOIC-8, with 8 pins. Its footprint is drawn on this page.
Where is the INA828ID datasheet?
Texas Instruments publishes it: the Datasheet link on this page opens it.
Where can I order the INA828ID?
JLCPCB lists it as part C544342, with 1,107 in stock; the sellers' links on this page open their listings.
What can replace the INA828ID?
Parts like it in the library: the INA821ID by Texas Instruments, the INA849D by Texas Instruments, the AD8421BRZ-R7 by Analog Devices and the INA818ID by Texas Instruments. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the INA828ID?
5 boards in 4 repositories on GitHub; the most starred are listed on this page, with their KiCad files.
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