| Drain-to-Source Voltage VDS | TA = 25°C | max 30 V | 1 |
| Gate-to-Source Voltage VGS | TA = 25°C; ±20 V | min -20 · max 20 V | 1 |
| Continuous Drain Current (Package Limit) ID | TA = 25°C | max 22 A | 1 |
| Continuous Drain Current(1) ID | TA = 25°C; RθJA = 50 on 1 in² Cu (2 oz.) on 0.060" thick FR4 PCB | max 7.6 A | 1 |
| Pulsed Drain Current, TA = 25°C(2) IDM | TA = 25°C; pulse duration 10 us, duty cycle ≤2% | max 39 A | 1 |
| Power Dissipation(1) PD | TA = 25°C; RθJA = 50 on 1 in² Cu (2 oz.) on 0.060" thick FR4 PCB | max 2.5 W | 1 |
| Operating Junction and Storage Temperature Range TJ, Tstg | | min -55 · max 150 °C | 1 |
| Avalanche Energy, single pulse EAS | TA = 25°C; ID = 12 A, L = 0.1 mH, RG = 25 Ω | max 7.2 mJ | 1 |
| Drain-to-Source Voltage BVDSS | TA = 25°C; VGS = 0 V, ID = 250 uA | min 30 V | 3 |
| Drain-to-Source Leakage Current IDSS | TA = 25°C; VGS = 0 V, VDS = 24 V | max 1 uA | 3 |
| Gate-to-Source Leakage Current IGSS | TA = 25°C; VDS = 0 V, VGS = 20 V | max 100 nA | 3 |
| Gate-to-Source Threshold Voltage VGS(th) | TA = 25°C; VDS = VGS, IDS = 250 uA | min 1.3 · typ 1.6 · max 2 V | 3 |
| Drain-to-Source On-Resistance RDS(on) | TA = 25°C; VGS = 4.5 V, IDS = 5 A | typ 24 · max 29 mΩ | 3 |
| Drain-to-Source On-Resistance RDS(on) | TA = 25°C; VGS = 10 V, IDS = 5 A | typ 20 · max 24 mΩ | 3 |
| Transconductance gƒs | TA = 25°C; VDS = 15 V, IDS = 5 A | typ 43 S | 3 |
| Input Capacitance CISS | TA = 25°C; VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | typ 360 · max 468 pF | 3 |
| Output Capacitance COSS | TA = 25°C; VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | typ 101 · max 131 pF | 3 |
| Reverse Transfer Capacitance CRSS | TA = 25°C; VGS = 0 V, VDS = 15 V, ƒ = 1 MHz | typ 9 · max 12 pF | 3 |
| Series Gate Resistance Rg | TA = 25°C | typ 3.8 · max 7.6 Ω | 3 |
| Gate Charge Total (4.5 V) Qg | TA = 25°C; VDS = 15 V, IDS = 5 A | typ 2.4 · max 3.1 nC | 3 |
| Gate Charge – Gate-to-Drain Qgd | TA = 25°C; VDS = 15 V, IDS = 5 A | typ 0.6 nC | 3 |
| Gate Charge Gate-to-Source Qgs | TA = 25°C; VDS = 15 V, IDS = 5 A | typ 0.9 nC | 3 |
| Gate Charge at Vth Qg(th) | TA = 25°C; VDS = 15 V, IDS = 5 A | typ 0.6 nC | 3 |
| Output Charge QOSS | TA = 25°C; VDS = 15 V, VGS = 0 V | typ 3.4 nC | 3 |
| Turn On Delay Time td(on) | TA = 25°C; VDS = 15 V, VGS = 4.5 V, IDS = 5 A, RG = 2 Ω | typ 5.3 ns | 3 |
| Rise Time tr | TA = 25°C; VDS = 15 V, VGS = 4.5 V, IDS = 5 A, RG = 2 Ω | typ 19 ns | 3 |
| Turn Off Delay Time td(off) | TA = 25°C; VDS = 15 V, VGS = 4.5 V, IDS = 5 A, RG = 2 Ω | typ 8 ns | 3 |
| Fall Time tƒ | TA = 25°C; VDS = 15 V, VGS = 4.5 V, IDS = 5 A, RG = 2 Ω | typ 2.6 ns | 3 |
| Diode Forward Voltage VSD | TA = 25°C; IDS = 5 A, VGS = 0 V | typ 0.8 · max 1 V | 3 |
| Reverse Recovery Charge Qrr | TA = 25°C; VDD = 15 V, IF = 5 A, di/dt = 300 A/us | typ 2.3 nC | 3 |
| Reverse Recovery Time trr | TA = 25°C; VDD = 15 V, IF = 5 A, di/dt = 300 A/us | typ 11 ns | 3 |
| Junction-to-Case Thermal Resistance (1) RθJC | TA = 25°C; Q2; mounted on a 1 inch², 2 oz. Cu pad on a 1.5 inches × 1.5 inches, 0.06 inch thick FR4 PCB; specified by design | max 6.2 °C/W | 3 |
| Junction-to-Ambient Thermal Resistance (1) (2) RθJA | TA = 25°C; Q2; device mounted on FR4 material with 1 inch², 2 oz. Cu | max 65 °C/W | 3 |