| Drain-to-Source Voltage VDS | TA = 25°C | typ 25 V | 1 |
| Gate Charge Total (4.5 V) Qg | TA = 25°C | typ 5.8 nC | 1 |
| Gate Charge Gate to Drain Qgd | TA = 25°C | typ 1.5 nC | 1 |
| Drain-to-Source On-Resistance RDS(on) | TA = 25°C, VGS = 4.5 V | typ 5.9 mΩ | 1 |
| Drain-to-Source On-Resistance RDS(on) | TA = 25°C, VGS = 10 V | typ 4.2 mΩ | 1 |
| Threshold Voltage Vth | TA = 25°C | typ 1.8 V | 1 |
| Drain-to-Source Voltage VDS | TA = 25°C | max 25 V | 1 |
| Gate-to-Source Voltage VGS | TA = 25°C | min -12 · max 16 V | 1 |
| Continuous Drain Current (Package limited) ID | TA = 25°C | max 60 A | 1 |
| Continuous Drain Current (Silicon limited) ID | TC = 25°C | max 79 A | 1 |
| Continuous Drain Current (1) ID | TA = 25°C | max 19 A | 1 |
| Pulsed Drain Current(2) IDM | TA = 25°C | max 240 A | 1 |
| Power Dissipation(1) PD | TA = 25°C | max 2.8 W | 1 |
| Power Dissipation, TC = 25°C PD | TC = 25°C | max 46 W | 1 |
| Operating Junction Temperature, Storage Temperature TJ, Tstg | | min -55 · max 150 °C | 1 |
| Avalanche Energy, single pulse EAS | TA = 25°C | max 101 mJ | 1 |
| Drain-to-source voltage BVDSS | TA = 25°C, VGS = 0 V, ID = 250 uA | min 25 V | 3 |
| Drain-to-source leakage current IDSS | TA = 25°C, VGS = 0 V, VDS = 20 V | max 1 uA | 3 |
| Gate-to-source leakage current IGSS | TA = 25°C, VDS = 0 V, VGS = +16/–12 V | max 100 nA | 3 |
| Gate-to-source threshold voltage VGS(th) | TA = 25°C, VDS = VGS, ID = 250 uA | min 1.4 · typ 1.8 · max 2.2 V | 3 |
| Drain-to-source on-resistance RDS(on) | TA = 25°C, VGS = 4.5 V, ID = 20 A | typ 5.9 · max 7.4 mΩ | 3 |
| Drain-to-source on-resistance RDS(on) | TA = 25°C, VGS = 10 V, ID = 20 A | typ 4.2 · max 5.3 mΩ | 3 |
| Transconductance gfs | TA = 25°C, VDS = 15 V, ID = 20 A | typ 53 S | 3 |
| Input capacitance CISS | TA = 25°C, VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz | typ 840 · max 1100 pF | 3 |
| Output capacitance COSS | TA = 25°C, VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz | typ 680 · max 950 pF | 3 |
| Reverse transfer capacitance CRSS | TA = 25°C, VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHz | typ 57 · max 80 pF | 3 |
| Series gate resistance Rg | TA = 25°C | typ 1.2 · max 2.4 Ω | 3 |
| Gate charge total (4.5 V) Qg | TA = 25°C, VDS = 12.5 V, ID = 20 A | typ 5.8 · max 8.1 nC | 3 |
| Gate charge gate to drain Qgd | TA = 25°C, VDS = 12.5 V, ID = 20 A | typ 1.5 nC | 3 |
| Gate charge gate to source Qgs | TA = 25°C, VDS = 12.5 V, ID = 20 A | typ 2.5 nC | 3 |
| Gate charge at Vth Qg(th) | TA = 25°C, VDS = 12.5 V, ID = 20 A | typ 1.5 nC | 3 |
| Output charge QOSS | TA = 25°C, VDS = 13.6 V, VGS = 0 V | typ 13.9 nC | 3 |
| Turn on delay time td(on) | TA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ω | typ 7.3 ns | 3 |
| Rise time tr | TA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ω | typ 12.9 ns | 3 |
| Turn off delay time td(off) | TA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ω | typ 8.5 ns | 3 |
| Fall time tf | TA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ω | typ 4.8 ns | 3 |
| Diode forward voltage VSD | TA = 25°C, IS = 20 A, VGS = 0 V | typ 0.85 · max 1 V | 3 |
| Reverse recovery charge Qrr | TA = 25°C, VDD = 13.6 V, IF = 20 A, di/dt = 300 A/us | typ 18 nC | 3 |
| Reverse recovery time trr | TA = 25°C, VDD = 13.6 V, IF = 20 A, di/dt = 300 A/us | typ 22 ns | 3 |
| Junction-to-case thermal resistance (1) RθJC | Q3, TA = 25°C; mounted on a 1 inch2, 2 oz. Cu pad on a 1.5 inch × 1.5 inch, 0.06 inch thick FR4 PCB; specified by design | max 2.7 °C/W | 3 |
| Junction-to-ambient thermal resistance (1) (2) RθJA | Q3, TA = 25°C; FR4 material with 1 inch2, 2 oz. Cu | max 55 °C/W | 3 |