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CSD16406Q3, in 3D

CSD16406Q3

Texas Instruments

-55℃~+150℃ 1 N-channel 1.1nF 2.2V 25V 46W 7.4mΩ@4.5V 79A 8.1nC@4.5V 80pF 950pF N-Channel VSON-8(3.3x3.3) MOSFETs ROHS

Extended
DatasheetJLCPCBLCSCti/CSD16406Q3
Category
MOSFETs
Package
VSON-8(3.3x3.3)
Pins
9

Overview

The CSD16406Q3 is a MOSFET made by Texas Instruments in a VSON-8(3.3x3.3) package with 9 pins. -55℃~+150℃ 1 N-channel 1.1nF 2.2V 25V 46W 7.4mΩ@4.5V 79A 8.1nC@4.5V 80pF 950pF N-Channel VSON-8(3.3x3.3) MOSFETs ROHS.

PCBKit's library has its KiCad symbol (EasyEDA_Cloud:CSD16406Q3_C2861720, from EasyEDA) and its footprint (EasyEDA_Cloud:DFN-8_L3.3-W3.3-P0.65-BL-3, from EasyEDA), ready for a KiCad board. 4,457 are in stock at JLCPCB (part C2861720). 8 open-source boards in 8 repositories on GitHub use it.

Symbol

D8D7D6D5S1S2S3G4EP9
EasyEDA_Cloud:CSD16406Q3_C2861720From EasyEDA

Footprint

123456789
EasyEDA_Cloud:DFN-8_L3.3-W3.3-P0.65-BL-3From EasyEDA

From the datasheet

14
Drain-source, most
25 V · Drain-to-source voltage, absolute maximum · p. 1
Gate-source, most
16 V · Gate-to-source voltage, positive absolute maximum · p. 1
Gate-source, most
12 V · Gate-to-source voltage, negative absolute limit · p. 1
Drain current, most
60 A · Continuous drain current, package limited, TA = 25°C, max · p. 1
Drain current, most
79 A · Continuous drain current, silicon limited, TC = 25°C, max · p. 1
Drain current, most
19 A · Continuous drain current (1), TA = 25°C, max · p. 1
Junction, hottest
150 °C · Operating junction temperature, max · p. 1
On resistance
7.4 mΩ · VGS = 4.5 V, ID = 20 A, max · p. 3
On resistance
5.3 mΩ · VGS = 10 V, ID = 20 A, max · p. 3
Gate threshold
1.8 V · VDS = VGS, ID = 250 uA, typical · p. 3
Forward voltage
850 mV · Body diode, IS = 20 A, VGS = 0 V, typical · p. 3
Edge
4.8 ns · Fall time, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ω, typical · p. 3
Junction to case (Q3)
2.7 K/W · Junction-to-case thermal resistance, max · p. 3
Junction to air (Q3)
55 K/W · Junction-to-ambient thermal resistance, FR4 with 1 inch2 of 2 oz. Cu, max · p. 3

What it is and has

5
Device type
N-Channel NexFET™ Power MOSFET · p. 1
Avalanche rating
Avalanche Rated · p. 1
Package
SON 3.3 mm × 3.3 mm Plastic Package · p. 1
Halogen
Halogen Free · p. 1
Terminal plating
Pb Free · p. 1

Specifications

41
ParameterConditionsAs printedPage
Drain-to-Source Voltage VDSTA = 25°Ctyp 25 V1
Gate Charge Total (4.5 V) QgTA = 25°Ctyp 5.8 nC1
Gate Charge Gate to Drain QgdTA = 25°Ctyp 1.5 nC1
Drain-to-Source On-Resistance RDS(on)TA = 25°C, VGS = 4.5 Vtyp 5.9 mΩ1
Drain-to-Source On-Resistance RDS(on)TA = 25°C, VGS = 10 Vtyp 4.2 mΩ1
Threshold Voltage VthTA = 25°Ctyp 1.8 V1
Drain-to-Source Voltage VDSTA = 25°Cmax 25 V1
Gate-to-Source Voltage VGSTA = 25°Cmin -12 · max 16 V1
Continuous Drain Current (Package limited) IDTA = 25°Cmax 60 A1
Continuous Drain Current (Silicon limited) IDTC = 25°Cmax 79 A1
Continuous Drain Current (1) IDTA = 25°Cmax 19 A1
Pulsed Drain Current(2) IDMTA = 25°Cmax 240 A1
Power Dissipation(1) PDTA = 25°Cmax 2.8 W1
Power Dissipation, TC = 25°C PDTC = 25°Cmax 46 W1
Operating Junction Temperature, Storage Temperature TJ, Tstgmin -55 · max 150 °C1
Avalanche Energy, single pulse EASTA = 25°Cmax 101 mJ1
Drain-to-source voltage BVDSSTA = 25°C, VGS = 0 V, ID = 250 uAmin 25 V3
Drain-to-source leakage current IDSSTA = 25°C, VGS = 0 V, VDS = 20 Vmax 1 uA3
Gate-to-source leakage current IGSSTA = 25°C, VDS = 0 V, VGS = +16/–12 Vmax 100 nA3
Gate-to-source threshold voltage VGS(th)TA = 25°C, VDS = VGS, ID = 250 uAmin 1.4 · typ 1.8 · max 2.2 V3
Drain-to-source on-resistance RDS(on)TA = 25°C, VGS = 4.5 V, ID = 20 Atyp 5.9 · max 7.4 mΩ3
Drain-to-source on-resistance RDS(on)TA = 25°C, VGS = 10 V, ID = 20 Atyp 4.2 · max 5.3 mΩ3
Transconductance gfsTA = 25°C, VDS = 15 V, ID = 20 Atyp 53 S3
Input capacitance CISSTA = 25°C, VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHztyp 840 · max 1100 pF3
Output capacitance COSSTA = 25°C, VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHztyp 680 · max 950 pF3
Reverse transfer capacitance CRSSTA = 25°C, VGS = 0 V, VDS = 12.5 V, ƒ = 1 MHztyp 57 · max 80 pF3
Series gate resistance RgTA = 25°Ctyp 1.2 · max 2.4 Ω3
Gate charge total (4.5 V) QgTA = 25°C, VDS = 12.5 V, ID = 20 Atyp 5.8 · max 8.1 nC3
Gate charge gate to drain QgdTA = 25°C, VDS = 12.5 V, ID = 20 Atyp 1.5 nC3
Gate charge gate to source QgsTA = 25°C, VDS = 12.5 V, ID = 20 Atyp 2.5 nC3
Gate charge at Vth Qg(th)TA = 25°C, VDS = 12.5 V, ID = 20 Atyp 1.5 nC3
Output charge QOSSTA = 25°C, VDS = 13.6 V, VGS = 0 Vtyp 13.9 nC3
Turn on delay time td(on)TA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ωtyp 7.3 ns3
Rise time trTA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ωtyp 12.9 ns3
Turn off delay time td(off)TA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ωtyp 8.5 ns3
Fall time tfTA = 25°C, VDS = 12.5 V, VGS = 4.5 V, ID = 20 A, RG = 2 Ωtyp 4.8 ns3
Diode forward voltage VSDTA = 25°C, IS = 20 A, VGS = 0 Vtyp 0.85 · max 1 V3
Reverse recovery charge QrrTA = 25°C, VDD = 13.6 V, IF = 20 A, di/dt = 300 A/ustyp 18 nC3
Reverse recovery time trrTA = 25°C, VDD = 13.6 V, IF = 20 A, di/dt = 300 A/ustyp 22 ns3
Junction-to-case thermal resistance (1) RθJCQ3, TA = 25°C; mounted on a 1 inch2, 2 oz. Cu pad on a 1.5 inch × 1.5 inch, 0.06 inch thick FR4 PCB; specified by designmax 2.7 °C/W3
Junction-to-ambient thermal resistance (1) (2) RθJAQ3, TA = 25°C; FR4 material with 1 inch2, 2 oz. Cumax 55 °C/W3

Ordering codes, by the datasheet

3
CSD16406Q3
VSON-CLIP (DQG) · 8 pins; 2500 units, LARGE T&R; operating temperature -55 to 150°C · p. 11
CSD16406Q3.B
VSON-CLIP (DQG) · 8 pins; 2500 units, LARGE T&R; operating temperature -55 to 150°C; no distinguishing electrical specification stated · p. 11
CSD16406Q3T
SON 3.3 x 3.3 mm Plastic Package · 250 units on 13-Inch Reel, Tape and Reel · p. 1

Parameters

21
Continuous Drain Current (Id)
;
Current - Continuous Drain(Id)
79A
Drain to Source Voltage
25V
Gate Charge(Qg)
8.1nC@4.5V
Gate Threshold Voltage (Vgs(th))
1.8V
Gate Threshold Voltage (Vgs(th)@Id)
2.2V@250uA
Input Capacitance (Ciss@Vds)
1.1nF@12.5V
Input Capacitance(Ciss)
1.1nF
Junction Temperature(Max)
150℃
Number
1 N-channel
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
950pF
Pd - Power Dissipation
46W
RDS(on)
7.4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)
80pF
Rise Time
4.8ns
Thermal Resistance(Junction to Ambient)
55℃/W
Thermal Resistance(Junction to Case)
2.7℃/W
Total Gate Charge (Qg@Vgs)
8.1nC@4.5V
Type
N-Channel
Voltage - Forward(Vf)
850mV

Order codes

2

Pinout

9
The pins of the CSD16406Q3
PinNameType
1SUnspecified
2SUnspecified
3SUnspecified
4GUnspecified
5DUnspecified
6DUnspecified
7DUnspecified
8DUnspecified
9EPUnspecified

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Questions

Is there a KiCad symbol and footprint for the CSD16406Q3?

Yes. The symbol is EasyEDA_Cloud:CSD16406Q3_C2861720 and the footprint EasyEDA_Cloud:DFN-8_L3.3-W3.3-P0.65-BL-3, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the CSD16406Q3?

VSON-8(3.3x3.3), with 9 pins. Its footprint is drawn on this page.

Where is the CSD16406Q3 datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Where can I order the CSD16406Q3?

JLCPCB lists it as part C2861720, with 4,457 in stock; the sellers' links on this page open their listings.

What can replace the CSD16406Q3?

Parts like it in the library: the IRFHM4234TRPBF by Infineon Technologies. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the CSD16406Q3?

8 boards in 8 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

Parts like it

1