CSD16301Q2

Texas Instruments

-55℃~+150℃ 1 N-channel 1.55V 15W 17pF 2.8nC@4.5V 20A 215pF 25V 340pF 34mΩ@3V N-Channel WSON-6(2x2) MOSFETs ROHS

Extended

Category: MOSFETs
Package: WSON-6(2x2)
Pins: 8

Overview

The CSD16301Q2 is a MOSFET made by Texas Instruments in a WSON-6(2x2) package with 8 pins. -55℃~+150℃ 1 N-channel 1.55V 15W 17pF 2.8nC@4.5V 20A 215pF 25V 340pF 34mΩ@3V N-Channel WSON-6(2x2) MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Transistor_FET:CSD16301Q2, from KiCad's library) and its footprint (Package_SON:Texas_DQK, from KiCad's library), ready for a KiCad board. 3,415 are in stock at JLCPCB (part C140340). 7 open-source boards in 6 repositories on GitHub use it.

Symbol

Transistor_FET:CSD16301Q2From KiCad's library

Footprint

Package_SON:Texas_DQKFrom KiCad's library

From the datasheet

Drain-source, most: 25 V · Drain-to-source voltage, absolute maximum · p. 1
Gate-source, most: 10 V · Gate-to-source voltage, positive absolute maximum; negative limit −8 V · p. 1
Drain current, most: 5 A · Continuous drain current, package limited, max at TA = 25°C · p. 1
Junction, hottest: 150 °C · Operating junction temperature, max · p. 1
On resistance: 27 mΩ · Drain-to-source resistance, typical, VGS = 3V, IDS = 4A · p. 3
On resistance: 23 mΩ · Drain-to-source resistance, typical, VGS = 4.5V, IDS = 4A · p. 3
On resistance: 19 mΩ · Drain-to-source resistance, typical, VGS = 8V, IDS = 4A · p. 3
Gate threshold: 1.1 V · Gate-to-source threshold, typical, VDS = VGS, IDS = 250uA · p. 3
Junction to case (SON): 8.4 K/W · Junction-to-case thermal resistance, max · p. 3
Junction to air (SON): 65 K/W · Junction-to-ambient thermal resistance, max, 1in2 2oz Cu on FR4 · p. 3
Forward voltage: 800 mV · Body diode forward voltage, typical, IDS = 4A, VGS = 0V · p. 3
Edge: 1.7 ns · Fall time, typical, VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω · p. 3

What it is and has

Gate charge: Ultra-low Qg and Qgd · p. 1
Thermal resistance: Low · p. 1
Terminal plating: Lead-free · p. 1
RoHS: Compliant · p. 1
Halogen: Halogen free · p. 1
Package: SON 2mm × 2mm plastic package · p. 1

Specifications

Parameter	Conditions	As printed	Page
Drain-to-Source Voltage VDS	TA = 25°C	max 25 V	1
Gate-to-Source Voltage VGS	TA = 25°C	min -8 · max 10 V	1
Continuous Drain Current (Package Limited) ID	TA = 25°C	max 5 A	1
Continuous Drain Current (Silicon Limited) ID	TC = 25°C	max 20 A	1
Continuous Drain Current(1) ID	TA = 25°C; typical RθJA = 50°C/W on a 1-in2, 2oz Cu pad on a 0.06in thick FR4 PCB	max 8.2 A	1
Pulsed Drain Current(2) IDM	TA = 25°C; max RθJC = 8.4°C/W, pulse duration ≤ 100us, duty cycle ≤ 1%	max 85 A	1
Power Dissipation(1) PD	TA = 25°C; typical RθJA = 50°C/W on a 1-in2, 2oz Cu pad on a 0.06in thick FR4 PCB	max 2.5 W	1
Power Dissipation PD	TC = 25°C	max 15 W	1
Operating Junction, Storage Temperature TJ, TSTG		min -55 · max 150 °C	1
Avalanche Energy, Single Pulse EAS	ID = 14A, L = 0.1mH, RG = 25Ω	max 10 mJ	1
Drain-to-source voltage BVDSS	TA = 25°C; VGS = 0V, ID = 250uA	min 25 V	3
Drain-to-source leakage current IDSS	TA = 25°C; VGS = 0V, VDS = 20V	max 1 uA	3
Gate-to-source leakage current IGSS	TA = 25°C; VDS = 0V, VGS = +10/–8V	max 100 nA	3
Gate-to-source threshold voltage VGS(th)	TA = 25°C; VDS = VGS, IDS = 250uA	min 0.9 · typ 1.1 · max 1.55 V	3
Drain-to-source on resistance RDS(on)	TA = 25°C; VGS = 3V, IDS = 4A	typ 27 · max 34 mΩ	3
Drain-to-source on resistance RDS(on)	TA = 25°C; VGS = 4.5V, IDS = 4A	typ 23 · max 29 mΩ	3
Drain-to-source on resistance RDS(on)	TA = 25°C; VGS = 8V, IDS = 4A	typ 19 · max 24 mΩ	3
Transconductance gfs	TA = 25°C; VDS = 15V, IDS = 4A	typ 16.5 S	3
Input capacitance CISS	TA = 25°C; VGS = 0V, VDS = 12.5V, ƒ = 1MHz	typ 260 · max 340 pF	3
Output capacitance COSS	TA = 25°C; VGS = 0V, VDS = 12.5V, ƒ = 1MHz	typ 165 · max 215 pF	3
Reverse transfer capacitance CRSS	TA = 25°C; VGS = 0V, VDS = 12.5V, ƒ = 1MHz	typ 13 · max 17 pF	3
Series gate resistance Rg	TA = 25°C	typ 1.3 · max 2.6 Ω	3
Gate charge total (4.5 V) Qg	TA = 25°C; VDS = 10V, IDS = 4A	typ 2 · max 2.8 nC	3
Gate charge gate-to-drain Qgd	TA = 25°C; VDS = 10V, IDS = 4A	typ 0.4 nC	3
Gate charge gate-to-source Qgs	TA = 25°C; VDS = 10V, IDS = 4A	typ 0.6 nC	3
Gate charge at Vth Qg(th)	TA = 25°C; VDS = 10V, IDS = 4A	typ 0.3 nC	3
Output charge QOSS	TA = 25°C; VDS = 12.5V, VGS = 0V	typ 3 nC	3
Turnon delay time td(on)	TA = 25°C; VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω	typ 2.7 ns	3
Rise time tr	TA = 25°C; VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω	typ 4.4 ns	3
Turnoff delay time td(off)	TA = 25°C; VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω	typ 4.1 ns	3
Fall time tf	TA = 25°C; VDS = 12.5V, VGS = 4.5V, IDS = 4A, RG = 2Ω	typ 1.7 ns	3
Diode forward voltage VSD	TA = 25°C; IDS = 4A, VGS = 0V	typ 0.8 · max 1 V	3
Reverse recovery charge Qrr	TA = 25°C; VDD = 12.5V, IF = 4A, di/dt = 200A/us	typ 5.1 nC	3
Reverse recovery time trr	TA = 25°C; VDD = 12.5V, IF = 4A, di/dt = 200A/us	typ 11 ns	3
Junction-to-case thermal resistance(1) RθJC	SON; TA = 25°C; 1in2, 2oz thick Cu pad on a 1.5in × 1.5in, 0.06in thick FR4 PCB; specified by design	max 8.4 °C/W	3
Junction-to-ambient thermal resistance(1) (2) RθJA	SON; TA = 25°C; device mounted on FR4 material with 1in2, 2oz thick Cu	max 65 °C/W	3

Pins, by the datasheet

1 D: Drain. · p. 1
2 D: Drain. · p. 1
3 G: Gate. · p. 1
4 S: Source. · p. 1
5 D: Drain. · p. 1
6 D: Drain. · p. 1

Ordering codes, by the datasheet

CSD16301Q2: WSON (DQK) | 6 · 3000 | LARGE T&R; NIPDAU; Level-1-260C-UNLIM; operating temperature -55 to 150°C; marking 1631 · p. 10
CSD16301Q2.B: WSON (DQK) | 6 · Same listed package, packing, finish, MSL rating, temperature range and marking as CSD16301Q2 · p. 10
CSD16301Q2G4.B: WSON (DQK) | 6 · Same listed package, packing, finish, MSL rating, temperature range and marking as CSD16301Q2 · p. 10

Parameters

Current - Continuous Drain(Id): 5A
Drain to Source Voltage: 25V
Gate Charge(Qg): 2.8nC@4.5V
Gate Threshold Voltage (Vgs(th)): 1.1V
Input Capacitance(Ciss): 340pF
Junction Temperature(Max): 150℃
Number: 1 N-channel
Operating Temperature: -55℃~+150℃
Output Capacitance(Coss): 215pF
Pd - Power Dissipation: 15W
RDS(on): 34mΩ@3V
Reverse Transfer Capacitance (Crss@Vds): 17pF
Rise Time: 1.7ns
Thermal Resistance(Junction to Ambient): 65℃/W
Thermal Resistance(Junction to Case): 8.4℃/W
Type: N-Channel
Vgs: ±10V
Voltage - Forward(Vf): 800mV

Order codes

CSD16301Q2LCSC C140340

Pinout

The pins of the CSD16301Q2
Pin	Name	Type
1	D	Passive
2	D	Passive
3	G	Passive
4	S	Passive
5	D	Passive
6	D	Passive
7	S	Passive
8	D	Passive

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Questions

Is there a KiCad symbol and footprint for the CSD16301Q2?

Yes. The symbol is Transistor_FET:CSD16301Q2 and the footprint Package_SON:Texas_DQK, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the CSD16301Q2?

WSON-6(2x2), with 8 pins. Its footprint is drawn on this page.

Where is the CSD16301Q2 datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Where can I order the CSD16301Q2?

JLCPCB lists it as part C140340, with 3,415 in stock; the sellers' links on this page open their listings.

What can replace the CSD16301Q2?

Parts like it in the library: the CSD17313Q2T by Texas Instruments. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the CSD16301Q2?

7 boards in 6 repositories on GitHub; the most starred are listed on this page, with their KiCad files.

Parts like it

CSD17313Q2T
SON-8(2x2)-55℃~+150℃ 1 N-channel 1.8V 17W 17pF 180pF 19A 2.7nC@4.5V 30V 340pF 42mΩ@3V N-Channel SON-8(2x2) MOSFETs ROHSTexas InstrumentsMOSFETs