CC1101RGPR

Texas Instruments

-112dBm -40℃~+85℃ 1.8V~3.6V 12dBm 15.7mA 300MHz~348MHz、387MHz~464MHz、779MHz~928MHz 315MHz、433MHz、868MHz、915MHz 34.2mA 500Kbps ISM Power-on reset function、Supports RSSI function、CRC check function、Input sync word detection function SPI transceiver QFN-20-EP(4x4) RF Transceiver ICs ROHS

Extended

Datasheetti/CC1101RGPR

Category: RF Transceiver ICs
Package: QFN-20-EP(4x4)
Pins: 21

Overview

The CC1101RGPR is a RF Transceiver IC made by Texas Instruments in a QFN-20-EP(4x4) package with 21 pins. -112dBm -40℃~+85℃ 1.8V~3.6V 12dBm 15.7mA 300MHz~348MHz、387MHz~464MHz、779MHz~928MHz 315MHz、433MHz、868MHz、915MHz 34.2mA 500Kbps ISM Power-on reset function、Supports RSSI function、CRC check function、Input sync word detection function SPI transceiver QFN-20-EP(4x4) RF Transceiver ICs ROHS.

PCBKit's library has its KiCad symbol (dk_RF-Transceiver-ICs:CC1101RGPR, from Digikey) and its footprint (qfn-20-1ep-4x4mm-p0-5mm-ep2-45x2-45mm:QFN-20-1EP_4x4mm_P0.5mm_EP2.45x2.45mm, from Antmicro), ready for a KiCad board. 9,808 are in stock at JLCPCB (part C29953). 36 open-source boards in 26 repositories on GitHub use it.

Symbol

dk_RF-Transceiver-ICs:CC1101RGPRFrom Digikey

Footprint

qfn-20-1ep-4x4mm-p0-5mm-ep2-45x2-45mm:QFN-20-1EP_4x4mm_P0.5mm_EP2.45x2.45mmFrom Antmicro

From the datasheet

Supply, least: 1.8 V · VDD, recommended operating min; all supply pins at the same voltage · p. 8
Supply, most: 3.6 V · VDD, recommended operating max; all supply pins at the same voltage · p. 8
Supply, absolute maximum: 3.9 V · VDD, absolute max · p. 8
Works from: -40 °C · Operating temperature min · p. 8
Works up to: 85 °C · Operating temperature max · p. 8
Takes working: 14.7 mA · VDD, typical RX, 868/915 MHz, 1.2 kBaud, reduced current, input well above sensitivity limit · p. 10
Takes at most: 35.5 mA · VDD, largest tabulated typical TX current, 868 MHz, +12 dBm, 3.6 V, -40 °C · p. 11
Takes asleep: 200 nA · VDD, typical SLEEP, registers retained, GDO pins set to 0x2F · p. 9
Takes asleep: 500 nA · VDD, typical SLEEP with WOR enabled · p. 9
Takes asleep: 100 µA · VDD, typical SLEEP with crystal oscillator running · p. 9
Takes asleep: 165 µA · VDD, typical XOFF, digital regulator on · p. 9
Data rate, most: 600 kbit/s · Configurable data rate max · p. 1
Takes at most: 32.4 mA · typical TX current at 868 MHz, 10 dBm, multi-layer inductors · p. 60

What it is and has

Device: Low-Power Sub-1 GHz RF Transceiver · p. 1
Maximum data rate: 600 kbps · p. 1
RX and TX FIFOs: Separate 64-byte RX and TX data FIFOs · p. 2
Temperature sensor: Integrated analog temperature sensor · p. 2
RSSI: Digital RSSI output · p. 2
Channel filter: Programmable channel filter bandwidth · p. 2
RF transceiver: Low-power, sub-1 GHz · p. 1

Specifications

232

Parameter	Conditions	As printed	Page
Supply voltage	All supply pins must have the same voltage	min -0.3 · max 3.9 V	8
Voltage on any digital pin	Maximum is VDD + 0.3 V, capped at 3.9 V	min -0.3 V	8
Voltage on the pins RF_P, RF_N, DCOUPL, RBIAS		min -0.3 · max 2 V	8
Voltage ramp-up rate		max 120 kV/us	8
Input RF level		max 10 dBm	8
Storage temperature range		min -50 · max 150 C	8
Solder reflow temperature	According to IPC/JEDEC J-STD-020	max 260 C	8
ESD	According to JEDEC STD 22, method A114, Human Body Model (HBM)	max 750 V	8
ESD	According to JEDEC STD 22, C101C, Charged Device Model (CDM)	max 400 V	8
Operating temperature		min -40 · max 85 C	8
Operating supply voltage	All supply pins must have the same voltage	min 1.8 · max 3.6 V	8
Frequency range		min 300 · max 348 MHz	8
Frequency range	If using a 27 MHz crystal, the lower frequency limit for this band is 392 MHz	min 387 · max 464 MHz	8
Frequency range		min 779 · max 928 MHz	8
Data rate	2-FSK; optional Manchester encoding halves the data rate in kbps	min 0.6 · max 500 kBaud	8
Data rate	GFSK, OOK, and ASK; optional Manchester encoding halves the data rate in kbps	min 0.6 · max 250 kBaud	8
Data rate	4-FSK (the data rate in kbps will be twice the baud rate); optional Manchester encoding halves the data rate in kbps	min 0.6 · max 300 kBaud	8
Data rate	(Shaped) MSK (also known as differential offset QPSK); optional Manchester encoding halves the data rate in kbps	min 26 · max 500 kBaud	8
Current consumption in power down modes	TA = 25°C, VDD = 3.0 V; voltage regulator to digital part off, register values retained (SLEEP state); all GDO pins programmed to 0x2F (HW to 0)	typ 0.2 · max 1 A	9
Current consumption in power down modes	TA = 25°C, VDD = 3.0 V; voltage regulator to digital part off, register values retained, low-power RC oscillator running (SLEEP state with WOR enabled)	typ 0.5 A	9
Current consumption in power down modes	TA = 25°C, VDD = 3.0 V; voltage regulator to digital part off, register values retained, XOSC running (SLEEP state with MCSM0.OSC_FORCE_ON set)	typ 100 A	9
Current consumption in power down modes	TA = 25°C, VDD = 3.0 V; voltage regulator to digital part on, all other modules in power down (XOFF state)	typ 165 A	9
Current consumption	TA = 25°C, VDD = 3.0 V; automatic RX polling once each second, low-power RC oscillator, 542 kHz filter bandwidth, 250 kBaud, PLL calibration every 4th wakeup; average with signal below carrier sense level (MCSM2.RX_TIME_RSSI=1)	typ 8.8 A	9
Current consumption	TA = 25°C, VDD = 3.0 V; automatic RX polling once each second, low-power RC oscillator, 542 kHz filter bandwidth, 250 kBaud, PLL calibration every 4th wakeup; signal above carrier sense level, 1.96 ms RX timeout, no preamble/sync word found	typ 35.3 A	9
Current consumption	TA = 25°C, VDD = 3.0 V; automatic RX polling every 15th second, low-power RC oscillator, 542 kHz filter bandwidth, 250 kBaud, PLL calibration every 4th wakeup; average with signal below carrier sense level (MCSM2.RX_TIME_RSSI=1)	typ 1.4 A	9
Current consumption	TA = 25°C, VDD = 3.0 V; automatic RX polling every 15th second, low-power RC oscillator, 542 kHz filter bandwidth, 250 kBaud, PLL calibration every 4th wakeup; signal above carrier sense level, 36.6 ms RX timeout, no preamble/sync word found	typ 39.3 A	9
Current consumption	TA = 25°C, VDD = 3.0 V; only voltage regulator to digital part and crystal oscillator running (IDLE state)	typ 1.7 mA	9
Current consumption	TA = 25°C, VDD = 3.0 V; only frequency synthesizer running (FSTXON state); also representative of intermediate states from IDLE to RX or TX, including calibration	typ 8.4 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 1.2 kBaud, reduced current, input at sensitivity limit	typ 15.4 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 1.2 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 14.4 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 38.4 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 15.2 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 38.4 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 14.3 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 250 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 16.5 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 250 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 15.1 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, +10 dBm output power	typ 27.4 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, 0 dBm output power	typ 15 mA	9
Current consumption, 315 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, –6 dBm output power	typ 12.3 mA	9
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 1.2 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 16 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 1.2 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 15 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 38.4 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 15.7 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 38.4 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 15 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 250 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 17.1 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 250 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 15.7 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, +10 dBm output power	typ 29.2 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, 0 dBm output power	typ 16 mA	10
Current consumption, 433 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, –6 dBm output power	typ 13.1 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 1.2 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 15.7 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 1.2 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 14.7 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 38.4 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 15.6 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 38.4 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 14.6 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 250 kBaud, register settings optimized for reduced current, input at sensitivity limit	typ 16.9 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Receive mode, 250 kBaud, register settings optimized for reduced current, input well above sensitivity limit	typ 15.6 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, +12 dBm output power, 868 MHz	typ 34.2 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, +10 dBm output power, 868 MHz	typ 30 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, 0 dBm output power, 868 MHz	typ 16.8 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, –6 dBm output power, 868 MHz	typ 16.4 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, +11 dBm output power, 915 MHz	typ 33.4 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, +10 dBm output power, 915 MHz	typ 30.7 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, 0 dBm output power, 915 MHz	typ 17.2 mA	10
Current consumption, 868/915 MHz	TA = 25°C, VDD = 3.0 V; Transmit mode, –6 dBm output power, 915 MHz	typ 17 mA	10
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 1.8 V, temperature = -40 °C	typ 32.7 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 1.8 V, temperature = 25 °C	typ 31.5 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 1.8 V, temperature = 85 °C	typ 30.5 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 3.0 V, temperature = -40 °C	typ 35.3 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 3.0 V, temperature = 25 °C	typ 34.2 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 3.0 V, temperature = 85 °C	typ 33.3 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 3.6 V, temperature = -40 °C	typ 35.5 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 3.6 V, temperature = 25 °C	typ 34.4 mA	11
Current [mA], PATABLE=0xC0, +12 dBm	VDD = 3.6 V, temperature = 85 °C	typ 33.5 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 1.8 V, temperature = -40 °C	typ 30.1 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 1.8 V, temperature = 25 °C	typ 29.2 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 1.8 V, temperature = 85 °C	typ 28.3 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 3.0 V, temperature = -40 °C	typ 30.9 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 3.0 V, temperature = 25 °C	typ 30 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 3.0 V, temperature = 85 °C	typ 29.4 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 3.6 V, temperature = -40 °C	typ 31.1 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 3.6 V, temperature = 25 °C	typ 30.3 mA	11
Current [mA], PATABLE=0xC5, +10 dBm	VDD = 3.6 V, temperature = 85 °C	typ 29.6 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 1.8 V, temperature = -40 °C	typ 16.4 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 1.8 V, temperature = 25 °C	typ 16 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 1.8 V, temperature = 85 °C	typ 15.6 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 3.0 V, temperature = -40 °C	typ 17.3 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 3.0 V, temperature = 25 °C	typ 16.8 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 3.0 V, temperature = 85 °C	typ 16.4 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 3.6 V, temperature = -40 °C	typ 17.6 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 3.6 V, temperature = 25 °C	typ 17.1 mA	11
Current [mA], PATABLE=0x50, 0 dBm	VDD = 3.6 V, temperature = 85 °C	typ 16.7 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 1.8 V, temperature = -40 °C	typ 31.9 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 1.8 V, temperature = 25 °C	typ 30.7 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 1.8 V, temperature = 85 °C	typ 29.8 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 3.0 V, temperature = -40 °C	typ 34.6 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 3.0 V, temperature = 25 °C	typ 33.4 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 3.0 V, temperature = 85 °C	typ 32.5 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 3.6 V, temperature = -40 °C	typ 34.8 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 3.6 V, temperature = 25 °C	typ 33.6 mA	11
Current [mA], PATABLE=0xC0, +11 dBm	VDD = 3.6 V, temperature = 85 °C	typ 32.7 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 1.8 V, temperature = -40 °C	typ 30.9 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 1.8 V, temperature = 25 °C	typ 29.8 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 1.8 V, temperature = 85 °C	typ 28.9 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 3.0 V, temperature = -40 °C	typ 31.7 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 3.0 V, temperature = 25 °C	typ 30.7 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 3.0 V, temperature = 85 °C	typ 30 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 3.6 V, temperature = -40 °C	typ 31.9 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 3.6 V, temperature = 25 °C	typ 31 mA	11
Current [mA], PATABLE=0xC3, +10 dBm	VDD = 3.6 V, temperature = 85 °C	typ 30.2 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 1.8 V, temperature = -40 °C	typ 17.2 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 1.8 V, temperature = 25 °C	typ 16.8 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 1.8 V, temperature = 85 °C	typ 16.4 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 3.0 V, temperature = -40 °C	typ 17.6 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 3.0 V, temperature = 25 °C	typ 17.2 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 3.0 V, temperature = 85 °C	typ 16.9 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 3.6 V, temperature = -40 °C	typ 17.8 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 3.6 V, temperature = 25 °C	typ 17.4 mA	11
Current [mA], PATABLE=0x8E, 0 dBm	VDD = 3.6 V, temperature = 85 °C	typ 17.1 mA	11
Digital channel filter bandwidth	User programmable; limits proportional to crystal frequency; values assume a 26.0 MHz crystal	min 58 · max 812 kHz	12
Spurious emissions	TA = 25°C, VDD = 3.0 V; 25 MHz – 1 GHz; maximum figure is the ETSI EN 300 220 limit	typ -68 · max -57 dBm	12
Spurious emissions	TA = 25°C, VDD = 3.0 V; above 1 GHz; maximum figure is the ETSI EN 300 220 limit	typ -66 · max -47 dBm	12
RX latency	Serial operation; time from start of reception until data is available on receiver data output pin	typ 9 bit	12
Receiver sensitivity	315 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; 2-FSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth	typ -111 dBm	12
Receiver sensitivity	315 MHz; TA = 25°C, VDD = 3.0 V; 500 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; MSK, 1% packet error rate, 20 bytes packet length, 812 kHz digital channel filter bandwidth	typ -88 dBm	12
Receiver sensitivity	433 MHz; TA = 25°C, VDD = 3.0 V; 0.6 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; GFSK, 1% packet error rate, 20 bytes packet length, 14.3 kHz deviation, 58 kHz digital channel filter bandwidth	typ -116 dBm	12
Receiver sensitivity	433 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; GFSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth	typ -112 dBm	12
Receiver sensitivity	433 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; GFSK, 1% packet error rate, 20 bytes packet length, 20 kHz deviation, 100 kHz digital channel filter bandwidth	typ -104 dBm	12
Receiver sensitivity	433 MHz; TA = 25°C, VDD = 3.0 V; 250 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; GFSK, 1% packet error rate, 20 bytes packet length, 127 kHz deviation, 540 kHz digital channel filter bandwidth	typ -95 dBm	12
Receiver sensitivity	868/915 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; GFSK, 1% packet error rate, 20 bytes packet length, 5.2 kHz deviation, 58 kHz digital channel filter bandwidth	typ -112 dBm	12
Saturation	868/915 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud GFSK; FIFOTHR.CLOSE_IN_RX=0	typ -14 dBm	12
Adjacent channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud GFSK; ±100 kHz offset; desired channel 3 dB above sensitivity limit; 100 kHz channel spacing	typ 37 dB	12
Image channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud GFSK; IF frequency 152 kHz; desired channel 3 dB above sensitivity limit	typ 31 dB	12
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud GFSK; ±2 MHz offset; desired channel 3 dB above sensitivity limit	typ -50 dBm	13
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 1.2 kBaud GFSK; ±10 MHz offset; desired channel 3 dB above sensitivity limit	typ -40 dBm	13
Receiver sensitivity	868/915 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; GFSK, 1% packet error rate, 20 bytes packet length, 20 kHz deviation, 100 kHz digital channel filter bandwidth	typ -104 dBm	13
Saturation	868/915 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud GFSK; FIFOTHR.CLOSE_IN_RX=0	typ -16 dBm	13
Adjacent channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud GFSK; -200 kHz offset; desired channel 3 dB above sensitivity limit; 200 kHz channel spacing	typ 12 dB	13
Adjacent channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud GFSK; +200 kHz offset; desired channel 3 dB above sensitivity limit; 200 kHz channel spacing	typ 25 dB	13
Image channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud GFSK; IF frequency 152 kHz; desired channel 3 dB above sensitivity limit	typ 23 dB	13
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud GFSK; ±2 MHz offset; desired channel 3 dB above sensitivity limit	typ -50 dBm	13
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 38.4 kBaud GFSK; ±10 MHz offset; desired channel 3 dB above sensitivity limit	typ -40 dBm	13
Receiver sensitivity	868/915 MHz; TA = 25°C, VDD = 3.0 V; 250 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; GFSK, 1% packet error rate, 20 bytes packet length, 127 kHz deviation, 540 kHz digital channel filter bandwidth	typ -95 dBm	13
Saturation	868/915 MHz; TA = 25°C, VDD = 3.0 V; 250 kBaud GFSK; FIFOTHR.CLOSE_IN_RX=0	typ -17 dBm	13
Adjacent channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 250 kBaud GFSK; desired channel 3 dB above sensitivity limit; 750 kHz channel spacing	typ 25 dB	13
Image channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 250 kBaud GFSK; IF frequency 304 kHz; desired channel 3 dB above sensitivity limit	typ 14 dB	13
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 250 kBaud GFSK; ±2 MHz offset; desired channel 3 dB above sensitivity limit	typ -50 dBm	13
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 250 kBaud GFSK; ±10 MHz offset; desired channel 3 dB above sensitivity limit	typ -40 dBm	13
Receiver sensitivity	868/915 MHz; TA = 25°C, VDD = 3.0 V; 500 kBaud, sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; MSK, 1% packet error rate, 20 bytes packet length, 812 kHz digital channel filter bandwidth	typ -90 dBm	13
Image channel rejection	868/915 MHz; TA = 25°C, VDD = 3.0 V; 500 kBaud MSK; IF frequency 355 kHz; desired channel 3 dB above sensitivity limit	typ 1 dB	13
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 500 kBaud MSK; ±2 MHz offset; desired channel 3 dB above sensitivity limit	typ -50 dBm	13
Blocking	868/915 MHz; TA = 25°C, VDD = 3.0 V; 500 kBaud MSK; ±10 MHz offset; desired channel 3 dB above sensitivity limit	typ -40 dBm	13
Receiver sensitivity	868/915 MHz; TA = 25°C, VDD = 3.0 V; 4-FSK, 125 kBaud (250 kbps), sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; 1% packet error rate, 20 bytes packet length, 127 kHz deviation, 406 kHz digital channel filter bandwidth	typ -96 dBm	13
Receiver sensitivity	868/915 MHz; TA = 25°C, VDD = 3.0 V; 4-FSK, 250 kBaud (500 kbps), sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; 1% packet error rate, 20 bytes packet length, 254 kHz deviation, 812 kHz digital channel filter bandwidth	typ -91 dBm	13
Receiver sensitivity	868/915 MHz; TA = 25°C, VDD = 3.0 V; 4-FSK, 300 kBaud (600 kbps), sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF=0; 1% packet error rate, 20 bytes packet length, 228 kHz deviation, 812 kHz digital channel filter bandwidth	typ -89 dBm	13
Programmed frequency resolution	TA = 25°C, VDD = 3.0 V; 26-27 MHz crystal; resolution equal for all frequency bands; typical expression spans lines and is omitted	min 397 · max 412 Hz	19
Synthesizer frequency tolerance	TA = 25°C, VDD = 3.0 V; given by crystal used; required accuracy including temperature and aging depends on frequency band and channel bandwidth/spacing; typical value is ±40 ppm	typ 40 ppm	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 50 kHz offset from carrier	typ -92 dBc/Hz	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 100 kHz offset from carrier	typ -92 dBc/Hz	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 200 kHz offset from carrier	typ -92 dBc/Hz	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 500 kHz offset from carrier	typ -98 dBc/Hz	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 1 MHz offset from carrier	typ -107 dBc/Hz	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 2 MHz offset from carrier	typ -113 dBc/Hz	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 5 MHz offset from carrier	typ -119 dBc/Hz	19
RF carrier phase noise	TA = 25°C, VDD = 3.0 V; @ 10 MHz offset from carrier	typ -129 dBc/Hz	19
PLL turn-on / hop time	TA = 25°C, VDD = 3.0 V; min with 27 MHz crystal, typ/max with 26 MHz crystal; leaving IDLE until RX, FSTXON or TX, without calibration; crystal oscillator running	min 72 · typ 75 · max 75 s	19
PLL RX/TX settling time	TA = 25°C, VDD = 3.0 V; min with 27 MHz crystal, typ/max with 26 MHz crystal; settling for 1·IF frequency step from RX to TX	min 29 · typ 30 · max 30 s	19
PLL TX/RX settling time	TA = 25°C, VDD = 3.0 V; min with 27 MHz crystal, typ/max with 26 MHz crystal; settling for 1·IF frequency step from TX to RX; 250 kbps	min 30 · typ 31 · max 31 s	19
PLL calibration time	TA = 25°C, VDD = 3.0 V; min with 27 MHz crystal, typ/max with 26 MHz crystal; calibration initiated manually or automatically before entering or after leaving RX/TX	min 685 · typ 712 · max 724 s	19
Output voltage at –40C	VDD = 3.0 V; write 0xBF to PTEST to use sensor in IDLE	typ 0.651 V	19
Output voltage at 0C	VDD = 3.0 V; write 0xBF to PTEST to use sensor in IDLE	typ 0.747 V	19
Output voltage at +40C	VDD = 3.0 V; write 0xBF to PTEST to use sensor in IDLE	typ 0.847 V	19
Output voltage at +80C	VDD = 3.0 V; write 0xBF to PTEST to use sensor in IDLE	typ 0.945 V	19
Temperature coefficient	VDD = 3.0 V; fitted from –20 C to +80 C	typ 2.47 mV/C	19
Error in calculated temperature, calibrated	VDD = 3.0 V; from –20 C to +80 C using 2.47 mV/C after 1-point calibration at room temperature; min/max based on simulated values for typical process parameters	min -2 · typ 0 · max 2 C	19
Current consumption increase when enabled	TA = 25°C, VDD = 3.0 V	typ 0.3 mA	19
Logic "0" input voltage	TA = 25°C	min 0 · max 0.7 V	20
Logic "0" output voltage	TA = 25°C; for up to 4 mA output current	min 0 · max 0.5 V	20
Logic "0" input current	TA = 25°C; input equals 0V; minimum N/A	max -50 nA	20
Logic "1" input current	TA = 25°C; input equals VDD; minimum N/A	max 50 nA	20
Power-up ramp-up time	From 0V until reaching 1.8V	max 5 ms	20
Power off time	Minimum time between power-on and power-off	min 1 ms	20
IDLE to RX, no calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 1953/fxosc	typ 75.1 us	54
IDLE to RX, with calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 1953/fxosc + FS calibration Time	typ 799 us	54
IDLE to TX/FSTXON, no calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 1954/fxosc	typ 75.2 us	54
IDLE to TX/FSTXON, with calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 1953/fxosc + FS calibration Time	typ 799 us	54
TX to RX switch	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 782/fxosc + 0.25/fbaudrate	typ 31.1 us	54
RX to TX switch	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 782/fxosc	typ 30.1 us	54
TX to IDLE, no calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; approximately 0.25/fbaudrate; approximate example time	typ 1 us	54
TX to IDLE, with calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; approximately 0.25/fbaudrate + FS calibration Time	typ 725 us	54
RX to IDLE, no calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 2/fxosc; approximate example time	typ 0.1 us	54
RX to IDLE, with calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 2/fxosc + FS calibration Time	typ 724 us	54
Manual calibration	No PA ramping; 26 MHz crystal oscillator, 250 kBaud, TEST0 = 0x0B; 283/fxosc + FS calibration Time	typ 735 us	54
Output Power	868 MHz; default power setting 0xC6; wire-wound inductors	typ 9.6 dBm	60
Current Consumption	868 MHz; default power setting 0xC6; output power 9.6 dBm; wire-wound inductors	typ 29.4 mA	60
Output Power	915 MHz; default power setting 0xC6; wire-wound inductors	typ 8.9 dBm	60
Current Consumption	915 MHz; default power setting 0xC6; output power 8.9 dBm; wire-wound inductors	typ 28.7 mA	60
Current Consumption	315 MHz; output power -30 dBm; setting 0x12; multi-layer inductors	typ 10.9 mA	60
Current Consumption	433 MHz; output power -30 dBm; setting 0x12; multi-layer inductors	typ 11.9 mA	60
Current Consumption	868 MHz; output power -30 dBm; setting 0x03; multi-layer inductors	typ 12.1 mA	60
Current Consumption	915 MHz; output power -30 dBm; setting 0x03; multi-layer inductors	typ 12 mA	60
Current Consumption	315 MHz; output power -20 dBm; setting 0x0D; multi-layer inductors	typ 11.4 mA	60
Current Consumption	433 MHz; output power -20 dBm; setting 0x0E; multi-layer inductors	typ 12.4 mA	60
Current Consumption	868 MHz; output power -20 dBm; setting 0x0F; multi-layer inductors	typ 12.7 mA	60
Current Consumption	915 MHz; output power -20 dBm; setting 0x0E; multi-layer inductors	typ 12.6 mA	60
Current Consumption	315 MHz; output power -15 dBm; setting 0x1C; multi-layer inductors	typ 12 mA	60
Current Consumption	433 MHz; output power -15 dBm; setting 0x1D; multi-layer inductors	typ 13.1 mA	60
Current Consumption	868 MHz; output power -15 dBm; setting 0x1E; multi-layer inductors	typ 13.4 mA	60
Current Consumption	915 MHz; output power -15 dBm; setting 0x1E; multi-layer inductors	typ 13.4 mA	60
Current Consumption	315 MHz; output power -10 dBm; setting 0x34; multi-layer inductors	typ 13.5 mA	60
Current Consumption	433 MHz; output power -10 dBm; setting 0x34; multi-layer inductors	typ 14.4 mA	60
Current Consumption	868 MHz; output power -10 dBm; setting 0x27; multi-layer inductors	typ 15 mA	60
Current Consumption	915 MHz; output power -10 dBm; setting 0x27; multi-layer inductors	typ 14.9 mA	60
Current Consumption	315 MHz; output power 0 dBm; setting 0x51; multi-layer inductors	typ 15 mA	60
Current Consumption	433 MHz; output power 0 dBm; setting 0x60; multi-layer inductors	typ 15.9 mA	60
Current Consumption	868 MHz; output power 0 dBm; setting 0x50; multi-layer inductors	typ 16.9 mA	60
Current Consumption	915 MHz; output power 0 dBm; setting 0x8E; multi-layer inductors	typ 16.7 mA	60
Current Consumption	315 MHz; output power 5 dBm; setting 0x85; multi-layer inductors	typ 18.3 mA	60
Current Consumption	433 MHz; output power 5 dBm; setting 0x84; multi-layer inductors	typ 19.4 mA	60
Current Consumption	868 MHz; output power 5 dBm; setting 0x81; multi-layer inductors	typ 21 mA	60
Current Consumption	915 MHz; output power 5 dBm; setting 0xCD; multi-layer inductors	typ 24.3 mA	60
Current Consumption	315 MHz; output power 7 dBm; setting 0xCB; multi-layer inductors	typ 22.1 mA	60
Current Consumption	433 MHz; output power 7 dBm; setting 0xC8; multi-layer inductors	typ 24.2 mA	60
Current Consumption	868 MHz; output power 7 dBm; setting 0xCB; multi-layer inductors	typ 26.8 mA	60
Current Consumption	915 MHz; output power 7 dBm; setting 0xC7; multi-layer inductors	typ 26.9 mA	60
Current Consumption	315 MHz; output power 10 dBm; setting 0xC2; multi-layer inductors	typ 26.9 mA	60
Current Consumption	433 MHz; output power 10 dBm; setting 0xC0; multi-layer inductors	typ 29.1 mA	60
Current Consumption	868 MHz; output power 10 dBm; setting 0xC2; multi-layer inductors	typ 32.4 mA	60
Current Consumption	915 MHz; output power 10 dBm; setting 0xC0; multi-layer inductors	typ 31.8 mA	60
Output Power	315 MHz; default power setting 0xC6; multi-layer inductors	typ 8.5 dBm	60
Current Consumption	315 MHz; default power setting 0xC6; output power 8.5 dBm; multi-layer inductors	typ 24.4 mA	60
Output Power	433 MHz; default power setting 0xC6; multi-layer inductors	typ 7.8 dBm	60
Current Consumption	433 MHz; default power setting 0xC6; output power 7.8 dBm; multi-layer inductors	typ 25.2 mA	60
Output Power	868 MHz; default power setting 0xC6; multi-layer inductors	typ 8.5 dBm	60
Current Consumption	868 MHz; default power setting 0xC6; output power 8.5 dBm; multi-layer inductors	typ 29.5 mA	60
Output Power	915 MHz; default power setting 0xC6; multi-layer inductors	typ 7.2 dBm	60
Current Consumption	915 MHz; default power setting 0xC6; output power 7.2 dBm; multi-layer inductors	typ 27.4 mA	60

Parameters

Applications: ISM
Current - Supply: 14.7mA
Current - Supply(Max): 35.5mA
Current Of Transmitting: 34.2mA
Data Rate: 600kbps
Features: Input sync word detection function
Frequency Range: 387MHz~464MHz
Interface: SPI
Operating Temperature: -40℃~+85℃
Output Power: 12dBm
Receive Current: 15.7mA
Sensitivity: -112dBm
Standby Current: 200nA
Type: transceiver
Typical Application Frequency: 433MHz
Voltage - Supply: 1.8V~3.6V
Voltage - Supply(Absolute Max): 3.9V

Order codes

CC1101RGPRLCSC C29953

Pinout

The pins of the CC1101RGPR
Pin	Name	Type
1	SCLK	Input
2	SO(GDO1)	Output
3	GDO2	Output
4	DVDD	Power in
5	DCOUPL	Power in
6	GDO0	Input/output
7	CSn	Input
8	XOSC_Q1	Input/output
9	AVDD	Power in
10	XOSC_Q2	Input/output
11	AVDD	Power in
12	RF_P	Input/output
13	RF_N	Input/output
14	AVDD	Power in
15	AVDD	Power in
16	GND	Power in
17	RBIAS	Input/output
18	DGUARD	Power in
19	GND	Power in
20	SI	Input
21	EP_GND	Power in

Open-source boards using it

All 36

2 layers47.2 × 35 mm
SpriteSAMD
RoboticExplorationLab/sprite
KickSat Sprite (2019) running Circuitpython
84 parts8
4 layers95.4 × 36.2 mm
Flipper main
E440QF/FOSSerZero
An Open-Hardware remake of the FlipperZero made with KiCAD
331 parts7
4 layers24 × 75 mm
The guesser
Mines-Rocketry-Club/flight-computers
Fully open source high power rocketry flight computers.
117 parts7GPL-3.0
4 layers152.4 × 63.5 mm
Krecek
mordae/krecek
bash # Prepare build for Krecek cmake -B build src -G Ninja
166 parts2Unlicense
2 layers40 × 40 mm
Anteres Receiver
Pablo-Jean/Antares-Receiver-HWR
Hardware for Project Antares! See all work on Ouroboros Embedded Education channel.
55 parts2
4 layers90 × 36 mm
A3-before crystal refinement
bdini13/esp32-cc1101-multiband
Work-in-progress ESP32-WROOM-32E + CC1101 multiband PCB: software-selected 315/433/868/915 MHz paths. AI-assisted engineering draft; not manufacturing-ready.
121 parts1
4 layers80 × 160 mm
PCB V3.1
Jonathan-0101/skeletonKey
BEng Dissertation; Penetration-testing device to highlight security system vulnerabilities
299 parts1GPL-3.0
2 layers100 × 45 mm
Gateway rev1
npeixoto64/ExitGuardian
A full product project that watches windows with wireless sensors and has a gateway for the main door with wireless sensors. When you open the exit door to leave, it checks:
80 parts1

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Questions

Is there a KiCad symbol and footprint for the CC1101RGPR?

Yes. The symbol is dk_RF-Transceiver-ICs:CC1101RGPR and the footprint qfn-20-1ep-4x4mm-p0-5mm-ep2-45x2-45mm:QFN-20-1EP_4x4mm_P0.5mm_EP2.45x2.45mm, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the CC1101RGPR?

QFN-20-EP(4x4), with 21 pins. Its footprint is drawn on this page.

Where is the CC1101RGPR datasheet?

Texas Instruments publishes it: the Datasheet link on this page opens it.

Where can I order the CC1101RGPR?

JLCPCB lists it as part C29953, with 9,808 in stock; the sellers' links on this page open their listings.

Which open-source boards use the CC1101RGPR?

36 boards in 26 repositories on GitHub; the most starred are listed on this page, with their KiCad files.