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SX1280IMLTRT, in 3D

SX1280IMLTRT

SEMTECH

-132dBm -40℃~+85℃ 1.8V~3.7V 12.5dBm 2.4GHz 2.4GHz~2.5GHz 24mA 8.2mA SPI、UART Supports RSSI function transceiver QFN-24-EP(4x4) RF Transceiver ICs ROHS

Extended
DatasheetJLCPCBLCSCsemtech/SX1280IMLTRT
Category
RF Transceiver ICs
Package
QFN-24-EP(4x4)
Pins
25

Overview

The SX1280IMLTRT is a RF Transceiver IC made by SEMTECH in a QFN-24-EP(4x4) package with 25 pins. -132dBm -40℃~+85℃ 1.8V~3.7V 12.5dBm 2.4GHz 2.4GHz~2.5GHz 24mA 8.2mA SPI、UART Supports RSSI function transceiver QFN-24-EP(4x4) RF Transceiver ICs ROHS.

PCBKit's library has its KiCad symbol (Analog & Interface:SX1280IMLTRT, from CERN's library) and its footprint (ICs And Semiconductors SMD:QFN50P400X400X100-25N-S265, from CERN's library), ready for a KiCad board. 3,596 are in stock at JLCPCB (part C125969). 32 open-source boards in 20 repositories on GitHub use it.

Symbol

MOSI_RX17MISO_TX16SCK_RTSN18NSS_CTS19NRESET3XTA4XTB6VBAT_IO11VBAT15VR_PA1VDD_IN2DCC_SW14DCC_FB12RFIO22DIO18DIO29DIO310BUSY7GND5GND13GND20GND21GND23GND24EP25
Analog & Interface:SX1280IMLTRTFrom CERN's library

Footprint

25
ICs And Semiconductors SMD:QFN50P400X400X100-25N-S265From CERN's library

From the datasheet

13
Supply, least
1.8 V · VBAT, recommended operating min · p. 19
Supply, most
3.7 V · VBAT, recommended operating max · p. 19
Supply, absolute maximum
3.9 V · VBAT, absolute max · p. 19
Works from
-40 °C · Operating temperature under bias min · p. 19
Works up to
85 °C · Operating temperature under bias max · p. 19
Junction, hottest
125 °C · Junction temperature max · p. 154
Takes working
5.7 mA · sum of VBAT and VBAT_IO, typical FSK receive, low power, BW = 2400 kHz, BR = 2000 kb/s · p. 25
Takes at most
24 mA · sum of VBAT and VBAT_IO, typical transmit at 12.5 dBm · p. 26
Takes asleep
215 nA · sum of VBAT and VBAT_IO, typical sleep, data RAM not retained, data buffer retained · p. 20
Data rate, most
2 Mbit/s · FSK programmable bitrate max · p. 25
Junction to air (QFN 24L 4X4 E-pad)
50.3 K/W · Still air, four-layer JEDEC PCB, nine thermal vias · p. 154
Junction to case (QFN 24L 4X4 E-pad)
30 K/W · Junction to case · p. 154
Junction to board (QFN 24L 4X4 E-pad)
13.3 K/W · Junction to board · p. 154

What it is and has

14
RF band
2.4 GHz · p. 1
Receiver sensitivity
Down to -132 dBm · p. 1
Transmitter
+12.5 dBm, high efficiency PA · p. 1
Power regulation
On-chip DC-DC · p. 1
Modulations
LoRa®, FLRC, (G)FSK · p. 1
Ranging
Standard and Advanced Ranging Engine, Time-of-Flight · p. 1
BLE
PHY layer compatibility · p. 1
Package
QFN 24 · p. 2
Environmental compliance
Pb-free, Halogen free, RoHS/WEEE compliant · p. 2
Radio operation
Half-duplex · p. 15
SPI
Slave, up to 18 MHz · p. 60
ESD HBM
Class 2, JESD22-A114, all pins · p. 19
ESD CDM
Class III, JESD22-C101, all pins · p. 19
Package
QFN24 4x4mm (MLP) · p. 154

Specifications

148
ParameterConditionsAs printedPage
Supply voltage on VBAT and VBAT_IO VBATmrmin -0.5 · max 3.9 V19
Temperature Tmrmin -55 · max 115 °C19
RF Input level Pmrmax 10 dBm19
Supply voltage VBAT and VBAT_IO VBATopmin 1.8 · max 3.7 V19
Temperature under bias Topmin -40 · max 85 °C19
Load capacitance on digital ports Clopmax 10 pF19
RF Input power MLmax 0 dBm19
Supply current in Sleep mode IDDSLdata RAM not retained; data buffer retainedtyp 0.215 · max 1 uA20
Supply current in Sleep mode IDDSLdata RAM retained (context saved); data buffer flushedtyp 0.25 · max 1 uA20
Supply current in Sleep mode IDDSLdata RAM retained; data buffer retainedtyp 0.4 · max 1 uA20
Supply current in Sleep mode IDDSLdata RAM retained; data buffer retained; RC64k is runningtyp 1.2 · max 1.8 uA20
Supply current in STDBY_RC mode IDDSTDBYRCtyp 700 uA20
Supply current in STDBY_XOSC mode IDDSTDBYXOSCtyp 1 mA20
Supply current in FS mode IDDFStyp 2.8 mA20
Synthesizer frequency range FRmin 2400 · max 2500 MHz20
Synthesizer frequency step FSTEP52 MHz referencetyp 198 Hz20
Phase noise at 2.45 GHz PHN1 MHz offsettyp -115 dBc/Hz20
Phase noise at 2.45 GHz PHN10 MHz offsettyp -135 dBc/Hz20
Crystal oscillator frequency FXOSCtyp 52 MHz20
Frequency synthesizer wake-up time with XOSC enabled TS_FStyp 54 us20
Frequency synthesizer hop time to within 10 kHz of target frequency TS_HOP1 MHztyp 20 us20
Frequency synthesizer hop time to within 10 kHz of target frequency TS_HOP10 MHztyp 30 us20
Frequency synthesizer hop time to within 10 kHz of target frequency TS_HOP100 MHztyp 50 us20
Crystal oscillator wake-up time from STDBY_RC mode TS_OStyp 40 us20
3rd Order input intercept for maximum low power gain setting IIP3In-band interferer <6 MHztyp -25 dBm21
3rd Order input intercept for maximum low power gain setting IIP3In-band interferer at 6 MHz offsettyp -12 dBm21
3rd Order input intercept for maximum low power gain setting IIP3In-band interferer at10 MHz offsettyp 0 dBm21
3rd Order input intercept for maximum low power gain setting IIP3In-band interferer at 20 MHz offsettyp 0 dBm21
Image rejection (CW tone 1% PER) IMRtyp 30 dB21
Supply current for low power mode IDDRXLP_LBW = 203 kHztyp 5.5 mA22
Supply current for low power mode IDDRXLP_LBW = 406 kHztyp 6 mA22
Supply current for low power mode IDDRXLP_LBW = 812 kHztyp 7 mA22
Supply current for low power mode IDDRXLP_LBW = 1625 kHztyp 7.5 mA22
Supply current for high sensitivity mode IDDRXHS_LBW = 203 kHztyp 6.2 mA22
Supply current for high sensitivity mode IDDRXHS_LBW = 406 kHztyp 6.7 mA22
Supply current for high sensitivity mode IDDRXHS_LBW = 812 kHztyp 7.7 mA22
Supply current for high sensitivity mode IDDRXHS_LBW = 1625 kHztyp 8.2 mA22
LoRa® bitrate programmable range with CR = 4/5 RB_LSF5, BW = 1625 kHztyp 202 kb/s22
LoRa® bitrate programmable range with CR = 4/5 RB_LSF6, BW = 1625 kHztyp 122 kb/s22
LoRa® bitrate programmable range with CR = 4/5 RB_LSF7, BW = 1625 kHztyp 71 kb/s22
LoRa® bitrate programmable range with CR = 4/5 RB_LSF12, BW = 203 kHztyp 0.476 kb/s22
LoRa® bandwidth programmable range BW_Lmin 203 · max 1625 kHz22
LoRa® receiver sensitivity with CR = 4/5 and low power mode enabled RFSLP_LSF7, BW = 1625 kHztyp -106 dBm22
LoRa® receiver sensitivity with CR = 4/5 and low power mode enabled RFSLP_LSF12, BW = 203 kHztyp -130 dBm22
LoRa® receiver sensitivity with CR = 4/5 and high sensitivity mode enabled RFSHS_LSF7, BW = 1625 kHztyp -108 dBm22
LoRa® receiver sensitivity with CR = 4/5 and high sensitivity mode enabled RFSHS_LSF12, BW = 203 kHztyp -132 dBm22
Co-channel rejection LoRa® CCR_LSF7typ 7.5 dB22
Co-channel rejection LoRa® CCR_LSF12typ 19.5 dB22
Blocking immunity SF12 BI_L+/- 1 MHztyp 60 dB22
Blocking immunity SF12 BI_L+/- 2 MHztyp 63 dB22
Blocking immunity SF12 BI_L+/- 10 MHztyp 81 dB22
Adjacent channel rejection at 1.5 BW of CW ACR_LSF = 12, BW = 203 kHztyp 37 dB23
Adjacent channel rejection at 1.5 BW of CW ACR_LSF = 7, BW = 1.6 MHztyp 37 dB23
Maximum tolerated frequency offset between transmitter and receiver, no sensitivity degradation FERR_LSF12min -50 · max 50 ppm23
Maximum tolerated frequency offset between transmitter and receiver, no sensitivity degradation FERR_LSF5 to SF10min -80 · max 80 ppm23
Supply currents (detection mode) IDDRX_FLBW = 300 kHz, BR = 260 kb/s; BT = 0.5typ 6.5 mA24
Supply currents (detection mode) IDDRX_FLBW = 1200 kHz, BR = 1300 kb/s; BT = 0.5typ 8.6 mA24
FLRC Modem programmable bitrate RB_FLRaw bits; BT = 0.5min 260 · max 1300 kb/s24
Programmable channel bandwidth range BW_FLBT = 0.5min 300 · max 1200 kHz24
FLRC Receiver Sensitivity RFS_FL260 kSymb/s, 130 kb/s; BW = 300 kHz CR=1/2; BT = 0.5typ -106 dBm24
FLRC Receiver Sensitivity RFS_FL1.3 MSymb/s, 650 Mb/s; BW = 1.2 MHz, CR=1/2; BT = 0.5typ -100.5 dBm24
Co-channel rejection FLRC CCR_FLBT = 0.5typ -10 dB24
Blocker level for Max low power gain setting BI_FL+/- 1 MHz; BT = 0.5typ 41 dB24
Blocker level for Max low power gain setting BI_FL+/- 2 MHz; BT = 0.5typ 44 dB24
Blocker level for Max low power gain setting BI_FL+/- 10 MHz; BT = 0.5typ 62 dB24
Blocker level for Max low power gain setting BI_FL+/- 20 MHz; BT = 0.5typ 69 dB24
Adjacent channel rejection at 1.5 BW for CW ACR_FL260 kb/s, BW = 300 kHz; BT = 0.5typ 44 dB24
Adjacent channel rejection at 1.5 BW for CW ACR_FL1.3 Mb/s, BW = 2.4 MHz; BT = 0.5typ 49 dB24
Supply currents for low power mode, demodulation running IDDRX_FSK_250_LPBW = 300 kHz, BR = 250 kb/s; β = 0.5typ 4.8 mA25
Supply currents for low power mode, demodulation running IDDRX_FSK_1000_LPBW = 1200 kHz, BR = 1000 kb/s; β = 0.5typ 5.3 mA25
Supply currents for low power mode, demodulation running IDDRX_FSK_2000_LPBW = 2400 kHz, BR = 2000 kb/s; β = 0.5typ 5.7 mA25
Supply currents for high sensitivity mode, demodulation running IDDRX_FSK_250_HSBW = 300 kHz, BR = 250 kb/s; β = 0.5typ 5.5 mA25
Supply currents for high sensitivity mode, demodulation running IDDRX_FSK_1000_HSBW = 1200 kHz, BR = 1000 kb/s; β = 0.5typ 6 mA25
Supply currents for high sensitivity mode, demodulation running IDDRX_FSK_2000_HSBW = 2400 kHz, BR = 2000 kb/s; β = 0.5typ 6.4 mA25
FSK Modem programmable bitrate BR_FSKβ = 0.5min 125 · max 2000 kb/s25
Programmable channel bandwidth range DSB BW_FSKβ = 0.5min 300 · max 2400 kHz25
FSK Receiver Sensitivity BER 0.1% RFS_FSK1low power mode; 250 kb/s, β = 0.5, BW = 300 kHztyp -96 dBm25
FSK Receiver Sensitivity BER 0.1% RFS_FSK1low power mode; 1 Mb/s, β = 0.5, BW = 1200 kHztyp -92 dBm25
FSK Receiver Sensitivity BER 0.1% RFS_FSK1_HShigh sensitivity mode; 250 kb/s, β = 0.5, BW = 300 kHztyp -98 dBm25
FSK Receiver Sensitivity BER 0.1% RFS_FSK1_HShigh sensitivity mode; 1 Mb/s, β = 0.5, BW = 1200 kHztyp -94 dBm25
FSK Receiver Sensitivity PER 1% RFS_FSK2low power mode; 250 kb/s, β = 0.5, BW = 300 kHztyp -93 dBm25
FSK Receiver Sensitivity PER 1% RFS_FSK2low power mode; 1 Mb/s, β = 0.5, BW = 1200 kHztyp -88 dBm25
FSK Receiver Sensitivity PER 1% RFS_FSK2_HShigh sensitivity mode; 250 kb/s, β = 0.5, BW = 300 kHztyp -94 dBm25
FSK Receiver Sensitivity PER 1% RFS_FSK2_HShigh sensitivity mode; 1 Mb/s, β = 0.5, BW = 1200 kHztyp -90 dBm25
Co-Channel Rejection CCR_FSKβ = 0.5typ -10 dB25
Blocker level for max low power gain setting BI_FSKBR = 250 kb/s, BW = 300 kHz; +/- 1 MHz; β = 0.5typ 41 dB25
Blocker level for max low power gain setting BI_FSKBR = 250 kb/s, BW = 300 kHz; +/- 2 MHz; β = 0.5typ 44 dB25
Blocker level for max low power gain setting BI_FSKBR = 250 kb/s, BW = 300 kHz; +/- 10 MHz; β = 0.5typ 62 dB25
Blocker level for max low power gain setting BI_FSKBR = 250 kb/s, BW = 300 kHz; +/- 20 MHz; β = 0.5typ 69 dB25
Adjacent channel rejection at 1.5 BW for CW ACR_FSKBW = 300 kHz; β = 0.5typ 34 dB26
Adjacent channel rejection at 1.5 BW for CW ACR_FSKBW = 1200 kHz; β = 0.5typ 34 dB26
12.5 dBm IDD_T13typ 24 mA26
10 dBm IDD_T10typ 18 mA26
0 dBm IDD_T0typ 10 mA26
Minimum RF output power RFOPMINtyp -18 dBm26
Maximum RF output power RFOPMAXtyp 12.5 dBm26
Programmable FSK frequency deviation FDAmin 62.5 · max 1000 kHz26
Crystal loading capacitance CLOADtyp 10 pF26
Crystal shunt capacitance C0XTALtyp 2 · max 5 pF26
Digital input level high VIHmin 0.8 VBAT_IO27
Digital input level low VILmax 0.2 VBAT_IO27
Digital output level high VOHImax = 2.5 mAmin 0.9 VBAT_IO27
Digital output level high VBAT_IO = 1.7 V VOHImax = 2.5 mAmin 0.85 VBAT_IO27
Digital output level low VOLImax = -2.5 mAmax 0.1 VBAT_IO27
Digital output level low VBAT_IO = 1.7 V VOLImax = -2.5 mAmax 0.12 VBAT_IO27
Digital input leakage current ILeakNSS, MOSI, SCKmin -1 · max 1 uA27
NSS falling edge to SCK setup time t1VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 25 ns60
SCK period t2VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 55 ns60
SCK high time t3VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 25 ns60
MOSI to SCK hold time t4VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 5 ns60
MOSI to SCK setup time t5VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 5 ns60
NSS falling to MISO delay t6VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 0 · max 15 ns60
SCK falling to MISO delay t7VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 0 · max 15 ns60
SCK to NSS rising edge hold time t8VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 25 ns60
NSS high time t9VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 100 ns60
NSS falling edge to SCK setup time when switching from Sleep to STDBY_RC mode t10VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pFmin 125 us60
SLEEP to STDBY_RC TswModeno data retentiontyp 1200 us70
SLEEP to STDBY_RC TswModewith data retentiontyp 130 us70
STDBY_RC to STDBY_XOSC TswModetyp 40 us70
STDBY_RC to FS TswModetyp 55 us70
STDBY_RC to Rx TswModetyp 85 us70
STDBY_RC to Tx TswModetyp 80 us70
STDBY_XOSC to FS TswModetyp 54 us70
STDBY_XOSC to Tx TswModetyp 54 us70
STDBY_XOSC to Rx TswModetyp 68 us70
FS to Rx TswModetyp 34 us70
FS to Tx TswModetyp 27 us70
Rx to FS TswModetyp 13 us70
Rx to Tx TswModetyp 39 us70
Tx to FS TswModetyp 31 us70
Tx to Rx TswModetyp 60 us70
Digital output level high VBAT_IO = 1.7 V VOHVBAT_IO = 1.7 V; Imax = 2.5 mAmin 0.85 VBAT_IO27
Digital output level low VBAT_IO = 1.7 V VOLVBAT_IO = 1.7 V; Imax = -2.5 mAmax 0.12 VBAT_IO27
Digital input leakage current (NSS, MOSI, SCK) ILeakmin -1 · max 1 uA27
NSS falling edge to SCK setup time t1VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 25 ns60
SCK period t2VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 55 ns60
SCK high time t3VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 25 ns60
MOSI to SCK hold time t4VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 5 ns60
MOSI to SCK setup time t5VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 5 ns60
NSS falling to MISO delay t6VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 0 · max 15 ns60
SCK falling to MISO delay t7VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 0 · max 15 ns60
SCK to NSS rising edge hold time t8VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 25 ns60
NSS high time t9VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 100 ns60
NSS falling edge to SCK setup time when switching from Sleep to STDBY_RC mode t10VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pFmin 125 us60
Junction-to-ambient thermal resistance ΘJAQFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still airtyp 50.3 °C / W154
Junction-to-top thermal characterization parameter ΨJTQFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still airtyp 0.3 °C / W154
Junction-to-case thermal resistance ΘJCQFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still airtyp 30 °C / W154
Junction-to-board thermal resistance ΘJBQFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still airtyp 13.3 °C / W154

Ordering codes, by the datasheet

1
SX1280IMLTRT
QFN 24 · Tape & Reel, 3’000 pieces; SX1280 includes Ranging Engine and Advanced Ranging · p. 2

Parameters

20
Current - Supply
5.7mA
Current - Supply(Max)
24mA
Current Of Transmitting
24mA
Data Rate
2Mbps
Features
Supports RSSI function
Frequency Range
2.4GHz~2.5GHz
Interface
UART
Junction Temperature(Max)
125℃
Operating Temperature
-40℃~+85℃
Output Power
12.5dBm
Receive Current
8.2mA
Sensitivity
-132dBm
Standby Current
215nA
Thermal Resistance(Junction to Ambient)
50.3℃/W
Thermal Resistance(Junction to Board)
13.3℃/W
Thermal Resistance(Junction to Case)
30℃/W
Type
transceiver
Typical Application Frequency
2.4GHz
Voltage - Supply
1.8V~3.7V
Voltage - Supply(Absolute Max)
3.9V

Order codes

1

Pinout

25
The pins of the SX1280IMLTRT
PinNameType
1VR_PAPassive
2VDD_INInput
3NRESETInput
4XTAPassive
5GNDPower in
6XTBPassive
7BUSYOutput
8DIO1Input/output
9DIO2Input/output
10DIO3Input/output
11VBAT_IOInput
12DCC_FBOutput
13GNDPower in
14DCC_SWOutput
15VBATInput
16MISO_TXOutput
17MOSI_RXInput
18SCK_RTSNInput
19NSS_CTSInput
20GNDPower in
21GNDPower in
22RFIOInput/output
23GNDPower in
24GNDPower in
25EPPower in

Open-source boards using it

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  • 6 layers32 × 59 mmAirbrake, the printed circuit board in 3D

    Airbrake

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Questions

Is there a KiCad symbol and footprint for the SX1280IMLTRT?

Yes. The symbol is Analog & Interface:SX1280IMLTRT and the footprint ICs And Semiconductors SMD:QFN50P400X400X100-25N-S265, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the SX1280IMLTRT?

QFN-24-EP(4x4), with 25 pins. Its footprint is drawn on this page.

Where is the SX1280IMLTRT datasheet?

SEMTECH publishes it: the Datasheet link on this page opens it.

Where can I order the SX1280IMLTRT?

JLCPCB lists it as part C125969, with 3,596 in stock; the sellers' links on this page open their listings.

Which open-source boards use the SX1280IMLTRT?

32 boards in 20 repositories on GitHub; the most starred are listed on this page, with their KiCad files.