
Kikit panel
maholli/sx1280-breakout
breakout board for Semtech SX1280 LoRa radio compatible with RFM9x footprints

The SX1280IMLTRT is a RF Transceiver IC made by SEMTECH in a QFN-24-EP(4x4) package with 25 pins. -132dBm -40℃~+85℃ 1.8V~3.7V 12.5dBm 2.4GHz 2.4GHz~2.5GHz 24mA 8.2mA SPI、UART Supports RSSI function transceiver QFN-24-EP(4x4) RF Transceiver ICs ROHS.
PCBKit's library has its KiCad symbol (Analog & Interface:SX1280IMLTRT, from CERN's library) and its footprint (ICs And Semiconductors SMD:QFN50P400X400X100-25N-S265, from CERN's library), ready for a KiCad board. 3,596 are in stock at JLCPCB (part C125969). 32 open-source boards in 20 repositories on GitHub use it.
| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Supply voltage on VBAT and VBAT_IO VBATmr | min -0.5 · max 3.9 V | 19 | |
| Temperature Tmr | min -55 · max 115 °C | 19 | |
| RF Input level Pmr | max 10 dBm | 19 | |
| Supply voltage VBAT and VBAT_IO VBATop | min 1.8 · max 3.7 V | 19 | |
| Temperature under bias Top | min -40 · max 85 °C | 19 | |
| Load capacitance on digital ports Clop | max 10 pF | 19 | |
| RF Input power ML | max 0 dBm | 19 | |
| Supply current in Sleep mode IDDSL | data RAM not retained; data buffer retained | typ 0.215 · max 1 uA | 20 |
| Supply current in Sleep mode IDDSL | data RAM retained (context saved); data buffer flushed | typ 0.25 · max 1 uA | 20 |
| Supply current in Sleep mode IDDSL | data RAM retained; data buffer retained | typ 0.4 · max 1 uA | 20 |
| Supply current in Sleep mode IDDSL | data RAM retained; data buffer retained; RC64k is running | typ 1.2 · max 1.8 uA | 20 |
| Supply current in STDBY_RC mode IDDSTDBYRC | typ 700 uA | 20 | |
| Supply current in STDBY_XOSC mode IDDSTDBYXOSC | typ 1 mA | 20 | |
| Supply current in FS mode IDDFS | typ 2.8 mA | 20 | |
| Synthesizer frequency range FR | min 2400 · max 2500 MHz | 20 | |
| Synthesizer frequency step FSTEP | 52 MHz reference | typ 198 Hz | 20 |
| Phase noise at 2.45 GHz PHN | 1 MHz offset | typ -115 dBc/Hz | 20 |
| Phase noise at 2.45 GHz PHN | 10 MHz offset | typ -135 dBc/Hz | 20 |
| Crystal oscillator frequency FXOSC | typ 52 MHz | 20 | |
| Frequency synthesizer wake-up time with XOSC enabled TS_FS | typ 54 us | 20 | |
| Frequency synthesizer hop time to within 10 kHz of target frequency TS_HOP | 1 MHz | typ 20 us | 20 |
| Frequency synthesizer hop time to within 10 kHz of target frequency TS_HOP | 10 MHz | typ 30 us | 20 |
| Frequency synthesizer hop time to within 10 kHz of target frequency TS_HOP | 100 MHz | typ 50 us | 20 |
| Crystal oscillator wake-up time from STDBY_RC mode TS_OS | typ 40 us | 20 | |
| 3rd Order input intercept for maximum low power gain setting IIP3 | In-band interferer <6 MHz | typ -25 dBm | 21 |
| 3rd Order input intercept for maximum low power gain setting IIP3 | In-band interferer at 6 MHz offset | typ -12 dBm | 21 |
| 3rd Order input intercept for maximum low power gain setting IIP3 | In-band interferer at10 MHz offset | typ 0 dBm | 21 |
| 3rd Order input intercept for maximum low power gain setting IIP3 | In-band interferer at 20 MHz offset | typ 0 dBm | 21 |
| Image rejection (CW tone 1% PER) IMR | typ 30 dB | 21 | |
| Supply current for low power mode IDDRXLP_L | BW = 203 kHz | typ 5.5 mA | 22 |
| Supply current for low power mode IDDRXLP_L | BW = 406 kHz | typ 6 mA | 22 |
| Supply current for low power mode IDDRXLP_L | BW = 812 kHz | typ 7 mA | 22 |
| Supply current for low power mode IDDRXLP_L | BW = 1625 kHz | typ 7.5 mA | 22 |
| Supply current for high sensitivity mode IDDRXHS_L | BW = 203 kHz | typ 6.2 mA | 22 |
| Supply current for high sensitivity mode IDDRXHS_L | BW = 406 kHz | typ 6.7 mA | 22 |
| Supply current for high sensitivity mode IDDRXHS_L | BW = 812 kHz | typ 7.7 mA | 22 |
| Supply current for high sensitivity mode IDDRXHS_L | BW = 1625 kHz | typ 8.2 mA | 22 |
| LoRa® bitrate programmable range with CR = 4/5 RB_L | SF5, BW = 1625 kHz | typ 202 kb/s | 22 |
| LoRa® bitrate programmable range with CR = 4/5 RB_L | SF6, BW = 1625 kHz | typ 122 kb/s | 22 |
| LoRa® bitrate programmable range with CR = 4/5 RB_L | SF7, BW = 1625 kHz | typ 71 kb/s | 22 |
| LoRa® bitrate programmable range with CR = 4/5 RB_L | SF12, BW = 203 kHz | typ 0.476 kb/s | 22 |
| LoRa® bandwidth programmable range BW_L | min 203 · max 1625 kHz | 22 | |
| LoRa® receiver sensitivity with CR = 4/5 and low power mode enabled RFSLP_L | SF7, BW = 1625 kHz | typ -106 dBm | 22 |
| LoRa® receiver sensitivity with CR = 4/5 and low power mode enabled RFSLP_L | SF12, BW = 203 kHz | typ -130 dBm | 22 |
| LoRa® receiver sensitivity with CR = 4/5 and high sensitivity mode enabled RFSHS_L | SF7, BW = 1625 kHz | typ -108 dBm | 22 |
| LoRa® receiver sensitivity with CR = 4/5 and high sensitivity mode enabled RFSHS_L | SF12, BW = 203 kHz | typ -132 dBm | 22 |
| Co-channel rejection LoRa® CCR_L | SF7 | typ 7.5 dB | 22 |
| Co-channel rejection LoRa® CCR_L | SF12 | typ 19.5 dB | 22 |
| Blocking immunity SF12 BI_L | +/- 1 MHz | typ 60 dB | 22 |
| Blocking immunity SF12 BI_L | +/- 2 MHz | typ 63 dB | 22 |
| Blocking immunity SF12 BI_L | +/- 10 MHz | typ 81 dB | 22 |
| Adjacent channel rejection at 1.5 BW of CW ACR_L | SF = 12, BW = 203 kHz | typ 37 dB | 23 |
| Adjacent channel rejection at 1.5 BW of CW ACR_L | SF = 7, BW = 1.6 MHz | typ 37 dB | 23 |
| Maximum tolerated frequency offset between transmitter and receiver, no sensitivity degradation FERR_L | SF12 | min -50 · max 50 ppm | 23 |
| Maximum tolerated frequency offset between transmitter and receiver, no sensitivity degradation FERR_L | SF5 to SF10 | min -80 · max 80 ppm | 23 |
| Supply currents (detection mode) IDDRX_FL | BW = 300 kHz, BR = 260 kb/s; BT = 0.5 | typ 6.5 mA | 24 |
| Supply currents (detection mode) IDDRX_FL | BW = 1200 kHz, BR = 1300 kb/s; BT = 0.5 | typ 8.6 mA | 24 |
| FLRC Modem programmable bitrate RB_FL | Raw bits; BT = 0.5 | min 260 · max 1300 kb/s | 24 |
| Programmable channel bandwidth range BW_FL | BT = 0.5 | min 300 · max 1200 kHz | 24 |
| FLRC Receiver Sensitivity RFS_FL | 260 kSymb/s, 130 kb/s; BW = 300 kHz CR=1/2; BT = 0.5 | typ -106 dBm | 24 |
| FLRC Receiver Sensitivity RFS_FL | 1.3 MSymb/s, 650 Mb/s; BW = 1.2 MHz, CR=1/2; BT = 0.5 | typ -100.5 dBm | 24 |
| Co-channel rejection FLRC CCR_FL | BT = 0.5 | typ -10 dB | 24 |
| Blocker level for Max low power gain setting BI_FL | +/- 1 MHz; BT = 0.5 | typ 41 dB | 24 |
| Blocker level for Max low power gain setting BI_FL | +/- 2 MHz; BT = 0.5 | typ 44 dB | 24 |
| Blocker level for Max low power gain setting BI_FL | +/- 10 MHz; BT = 0.5 | typ 62 dB | 24 |
| Blocker level for Max low power gain setting BI_FL | +/- 20 MHz; BT = 0.5 | typ 69 dB | 24 |
| Adjacent channel rejection at 1.5 BW for CW ACR_FL | 260 kb/s, BW = 300 kHz; BT = 0.5 | typ 44 dB | 24 |
| Adjacent channel rejection at 1.5 BW for CW ACR_FL | 1.3 Mb/s, BW = 2.4 MHz; BT = 0.5 | typ 49 dB | 24 |
| Supply currents for low power mode, demodulation running IDDRX_FSK_250_LP | BW = 300 kHz, BR = 250 kb/s; β = 0.5 | typ 4.8 mA | 25 |
| Supply currents for low power mode, demodulation running IDDRX_FSK_1000_LP | BW = 1200 kHz, BR = 1000 kb/s; β = 0.5 | typ 5.3 mA | 25 |
| Supply currents for low power mode, demodulation running IDDRX_FSK_2000_LP | BW = 2400 kHz, BR = 2000 kb/s; β = 0.5 | typ 5.7 mA | 25 |
| Supply currents for high sensitivity mode, demodulation running IDDRX_FSK_250_HS | BW = 300 kHz, BR = 250 kb/s; β = 0.5 | typ 5.5 mA | 25 |
| Supply currents for high sensitivity mode, demodulation running IDDRX_FSK_1000_HS | BW = 1200 kHz, BR = 1000 kb/s; β = 0.5 | typ 6 mA | 25 |
| Supply currents for high sensitivity mode, demodulation running IDDRX_FSK_2000_HS | BW = 2400 kHz, BR = 2000 kb/s; β = 0.5 | typ 6.4 mA | 25 |
| FSK Modem programmable bitrate BR_FSK | β = 0.5 | min 125 · max 2000 kb/s | 25 |
| Programmable channel bandwidth range DSB BW_FSK | β = 0.5 | min 300 · max 2400 kHz | 25 |
| FSK Receiver Sensitivity BER 0.1% RFS_FSK1 | low power mode; 250 kb/s, β = 0.5, BW = 300 kHz | typ -96 dBm | 25 |
| FSK Receiver Sensitivity BER 0.1% RFS_FSK1 | low power mode; 1 Mb/s, β = 0.5, BW = 1200 kHz | typ -92 dBm | 25 |
| FSK Receiver Sensitivity BER 0.1% RFS_FSK1_HS | high sensitivity mode; 250 kb/s, β = 0.5, BW = 300 kHz | typ -98 dBm | 25 |
| FSK Receiver Sensitivity BER 0.1% RFS_FSK1_HS | high sensitivity mode; 1 Mb/s, β = 0.5, BW = 1200 kHz | typ -94 dBm | 25 |
| FSK Receiver Sensitivity PER 1% RFS_FSK2 | low power mode; 250 kb/s, β = 0.5, BW = 300 kHz | typ -93 dBm | 25 |
| FSK Receiver Sensitivity PER 1% RFS_FSK2 | low power mode; 1 Mb/s, β = 0.5, BW = 1200 kHz | typ -88 dBm | 25 |
| FSK Receiver Sensitivity PER 1% RFS_FSK2_HS | high sensitivity mode; 250 kb/s, β = 0.5, BW = 300 kHz | typ -94 dBm | 25 |
| FSK Receiver Sensitivity PER 1% RFS_FSK2_HS | high sensitivity mode; 1 Mb/s, β = 0.5, BW = 1200 kHz | typ -90 dBm | 25 |
| Co-Channel Rejection CCR_FSK | β = 0.5 | typ -10 dB | 25 |
| Blocker level for max low power gain setting BI_FSK | BR = 250 kb/s, BW = 300 kHz; +/- 1 MHz; β = 0.5 | typ 41 dB | 25 |
| Blocker level for max low power gain setting BI_FSK | BR = 250 kb/s, BW = 300 kHz; +/- 2 MHz; β = 0.5 | typ 44 dB | 25 |
| Blocker level for max low power gain setting BI_FSK | BR = 250 kb/s, BW = 300 kHz; +/- 10 MHz; β = 0.5 | typ 62 dB | 25 |
| Blocker level for max low power gain setting BI_FSK | BR = 250 kb/s, BW = 300 kHz; +/- 20 MHz; β = 0.5 | typ 69 dB | 25 |
| Adjacent channel rejection at 1.5 BW for CW ACR_FSK | BW = 300 kHz; β = 0.5 | typ 34 dB | 26 |
| Adjacent channel rejection at 1.5 BW for CW ACR_FSK | BW = 1200 kHz; β = 0.5 | typ 34 dB | 26 |
| 12.5 dBm IDD_T13 | typ 24 mA | 26 | |
| 10 dBm IDD_T10 | typ 18 mA | 26 | |
| 0 dBm IDD_T0 | typ 10 mA | 26 | |
| Minimum RF output power RFOPMIN | typ -18 dBm | 26 | |
| Maximum RF output power RFOPMAX | typ 12.5 dBm | 26 | |
| Programmable FSK frequency deviation FDA | min 62.5 · max 1000 kHz | 26 | |
| Crystal loading capacitance CLOAD | typ 10 pF | 26 | |
| Crystal shunt capacitance C0XTAL | typ 2 · max 5 pF | 26 | |
| Digital input level high VIH | min 0.8 VBAT_IO | 27 | |
| Digital input level low VIL | max 0.2 VBAT_IO | 27 | |
| Digital output level high VOH | Imax = 2.5 mA | min 0.9 VBAT_IO | 27 |
| Digital output level high VBAT_IO = 1.7 V VOH | Imax = 2.5 mA | min 0.85 VBAT_IO | 27 |
| Digital output level low VOL | Imax = -2.5 mA | max 0.1 VBAT_IO | 27 |
| Digital output level low VBAT_IO = 1.7 V VOL | Imax = -2.5 mA | max 0.12 VBAT_IO | 27 |
| Digital input leakage current ILeak | NSS, MOSI, SCK | min -1 · max 1 uA | 27 |
| NSS falling edge to SCK setup time t1 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 25 ns | 60 |
| SCK period t2 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 55 ns | 60 |
| SCK high time t3 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 25 ns | 60 |
| MOSI to SCK hold time t4 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 5 ns | 60 |
| MOSI to SCK setup time t5 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 5 ns | 60 |
| NSS falling to MISO delay t6 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 0 · max 15 ns | 60 |
| SCK falling to MISO delay t7 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 0 · max 15 ns | 60 |
| SCK to NSS rising edge hold time t8 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 25 ns | 60 |
| NSS high time t9 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 100 ns | 60 |
| NSS falling edge to SCK setup time when switching from Sleep to STDBY_RC mode t10 | VBAT_IO = VBAT = 3.3 V; 25 °C; crystal = 52 MHz; maximum load capacitance 10 pF | min 125 us | 60 |
| SLEEP to STDBY_RC TswMode | no data retention | typ 1200 us | 70 |
| SLEEP to STDBY_RC TswMode | with data retention | typ 130 us | 70 |
| STDBY_RC to STDBY_XOSC TswMode | typ 40 us | 70 | |
| STDBY_RC to FS TswMode | typ 55 us | 70 | |
| STDBY_RC to Rx TswMode | typ 85 us | 70 | |
| STDBY_RC to Tx TswMode | typ 80 us | 70 | |
| STDBY_XOSC to FS TswMode | typ 54 us | 70 | |
| STDBY_XOSC to Tx TswMode | typ 54 us | 70 | |
| STDBY_XOSC to Rx TswMode | typ 68 us | 70 | |
| FS to Rx TswMode | typ 34 us | 70 | |
| FS to Tx TswMode | typ 27 us | 70 | |
| Rx to FS TswMode | typ 13 us | 70 | |
| Rx to Tx TswMode | typ 39 us | 70 | |
| Tx to FS TswMode | typ 31 us | 70 | |
| Tx to Rx TswMode | typ 60 us | 70 | |
| Digital output level high VBAT_IO = 1.7 V VOH | VBAT_IO = 1.7 V; Imax = 2.5 mA | min 0.85 VBAT_IO | 27 |
| Digital output level low VBAT_IO = 1.7 V VOL | VBAT_IO = 1.7 V; Imax = -2.5 mA | max 0.12 VBAT_IO | 27 |
| Digital input leakage current (NSS, MOSI, SCK) ILeak | min -1 · max 1 uA | 27 | |
| NSS falling edge to SCK setup time t1 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 25 ns | 60 |
| SCK period t2 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 55 ns | 60 |
| SCK high time t3 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 25 ns | 60 |
| MOSI to SCK hold time t4 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 5 ns | 60 |
| MOSI to SCK setup time t5 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 5 ns | 60 |
| NSS falling to MISO delay t6 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 0 · max 15 ns | 60 |
| SCK falling to MISO delay t7 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 0 · max 15 ns | 60 |
| SCK to NSS rising edge hold time t8 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 25 ns | 60 |
| NSS high time t9 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 100 ns | 60 |
| NSS falling edge to SCK setup time when switching from Sleep to STDBY_RC mode t10 | VBAT_IO = VBAT = 3.3 V, temperature = 25 °C, crystal oscillator frequency = 52 MHz; Max load cap of 10 pF | min 125 us | 60 |
| Junction-to-ambient thermal resistance ΘJA | QFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still air | typ 50.3 °C / W | 154 |
| Junction-to-top thermal characterization parameter ΨJT | QFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still air | typ 0.3 °C / W | 154 |
| Junction-to-case thermal resistance ΘJC | QFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still air | typ 30 °C / W | 154 |
| Junction-to-board thermal resistance ΘJB | QFN 24L 4X4 E-pad, 4 layers JEDEC PCB with 9 thermal vias, still air | typ 13.3 °C / W | 154 |
| Pin | Name | Type |
|---|---|---|
| 1 | VR_PA | Passive |
| 2 | VDD_IN | Input |
| 3 | NRESET | Input |
| 4 | XTA | Passive |
| 5 | GND | Power in |
| 6 | XTB | Passive |
| 7 | BUSY | Output |
| 8 | DIO1 | Input/output |
| 9 | DIO2 | Input/output |
| 10 | DIO3 | Input/output |
| 11 | VBAT_IO | Input |
| 12 | DCC_FB | Output |
| 13 | GND | Power in |
| 14 | DCC_SW | Output |
| 15 | VBAT | Input |
| 16 | MISO_TX | Output |
| 17 | MOSI_RX | Input |
| 18 | SCK_RTSN | Input |
| 19 | NSS_CTS | Input |
| 20 | GND | Power in |
| 21 | GND | Power in |
| 22 | RFIO | Input/output |
| 23 | GND | Power in |
| 24 | GND | Power in |
| 25 | EP | Power in |

maholli/sx1280-breakout
breakout board for Semtech SX1280 LoRa radio compatible with RFM9x footprints

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Chandubreddy819/Bluetooth-and-Mioty-Localization-Hardware
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hoffmatic/SD-2-EKF
This folder contains the live KiCad project files and local component libraries:


<iframe src="https://pcbkit.io/embed/parts/semtech/SX1280IMLTRT" title="SX1280IMLTRT in PCBKit" width="100%" height="480" style="border:0;border-radius:12px" allow="fullscreen" loading="lazy"></iframe><img src="https://pcbkit.io/embed/parts/semtech/SX1280IMLTRT.jpg" alt="SX1280IMLTRT" width="1200" height="900">[](https://pcbkit.io/parts/semtech/SX1280IMLTRT)Yes. The symbol is Analog & Interface:SX1280IMLTRT and the footprint ICs And Semiconductors SMD:QFN50P400X400X100-25N-S265, both drawn on this page. PCBKit places them on a board for you when you design with it.
QFN-24-EP(4x4), with 25 pins. Its footprint is drawn on this page.
SEMTECH publishes it: the Datasheet link on this page opens it.
JLCPCB lists it as part C125969, with 3,596 in stock; the sellers' links on this page open their listings.
32 boards in 20 repositories on GitHub; the most starred are listed on this page, with their KiCad files.