SWHA088R06VT

Samwin

-55℃~+150℃ 1 N-channel 1.4V 165pF 2.01nF 40.3W 49nC@10V 50A 60V 9.9mΩ@4.5V DFN-8(5x6) MOSFETs ROHS

Extended

Datasheetsamwin/SWHA088R06VT

Category: MOSFETs
Package: DFN-8(5x6)
Pins: 9

Overview

The SWHA088R06VT is a MOSFET made by Samwin in a DFN-8(5x6) package with 9 pins. -55℃~+150℃ 1 N-channel 1.4V 165pF 2.01nF 40.3W 49nC@10V 50A 60V 9.9mΩ@4.5V DFN-8(5x6) MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_NMOS_1S_2S_3S_4G_5D_6D_7D_8D_9D, from PCBKit's generic symbols) and its footprint (EasyEDA_Cloud:DFN-8_L6.0-W5.0-P1.27-LS6.2-BL_VBQA2309, from EasyEDA), ready for a KiCad board. 100 are in stock at JLCPCB (part C5151871). 1 open-source board in 1 repository on GitHub use it.

Symbol

Pinmap_Generic:Q_NMOS_1S_2S_3S_4G_5D_6D_7D_8D_9DFrom PCBKit's generic symbols

Footprint

EasyEDA_Cloud:DFN-8_L6.0-W5.0-P1.27-LS6.2-BL_VBQA2309From EasyEDA

From the datasheet

Drain-source, most: 60 V · Drain to source voltage, absolute max · p. 1
Drain current, most: 50 A · Continuous drain current max at TC=25°C, limited by junction temperature · p. 1
Gate-source, most: 20 V · Gate to source voltage, absolute max magnitude · p. 1
Junction, hottest: 150 °C · Operating junction temperature max · p. 1
Junction to case (DFN5*6): 3.1 K/W · Junction to case thermal resistance · p. 1
Junction to air (DFN5*6): 45 K/W · Junction to ambient thermal resistance, 1 in² pad of 2 oz copper · p. 1
Gate threshold: 2.4 V · Gate threshold voltage max, VDS=VGS, ID=250uA · p. 2
On resistance: 9.9 mΩ · Typical, VGS = 4.5V, ID=5A, TJ=25°C · p. 2
On resistance: 8.3 mΩ · Typical, VGS = 10V, ID=5A, TJ=25°C · p. 2
On resistance: 13.3 mΩ · Typical, VGS = 10V, ID=5A, TJ=125°C · p. 2

What it is and has

Device type: N-channel Enhanced mode DFN5*6 MOSFET · p. 1
Ruggedness: High ruggedness · p. 1
Gate charge: 49nC typical · p. 1
dv/dt capability: Improved · p. 1
Avalanche testing: 100% Avalanche Tested · p. 1

Specifications

Parameter	Conditions	As printed	Page
Drain to source voltage VDSS		max 60 V	1
Continuous drain current (@TC=25oC) ID	TC=25oC; drain current is limited by junction temperature	max 50 A	1
Continuous drain current (@TC=100oC) ID	TC=100oC; drain current is limited by junction temperature	max 33 A	1
Drain current pulsed IDM	note 1: pulse width limited by junction temperature	max 200 A	1
Continuous drain current (@Ta=25oC) IDSM	Ta=25oC	max 13 A	1
Continuous drain current (@Ta=70oC) IDSM	Ta=70oC	max 10 A	1
Gate to source voltage VGS		min -20 · max 20 V	1
Single pulsed avalanche energy EAS	note 2: L=2.67mH, IAS=12A, VDD=50V, RG=25Ω, starting TJ=25oC	max 192 mJ	1
Repetitive avalanche energy EAR	note 1: pulse width limited by junction temperature	max 11 mJ	1
Peak diode recovery dv/dt dv/dt	note 3: ISD ≤ 11A, di/dt=100A/us, VDD ≤ BVDSS, starting TJ=25oC	max 5 V/ns	1
Total power dissipation (@Tc=25oC) PD	Tc=25oC	max 40.3 W	1
Total power dissipation (@Ta=25oC) PD	Ta=25oC	max 2.8 W	1
Operating junction temperature & storage temperature TSTG, TJ		min -55 · max 150 oC	1
Thermal resistance, Junction to case Rthjc	DFN5*6; guaranteed by design; case reference is the solder mounting surface of the drain pins	max 3.1 oC/W	1
Thermal resistance, Junction to ambient Rthja	DFN5*6; 1 in2 pad of 2oz copper	max 45 oC/W	1
Drain to source breakdown voltage BVDSS	TJ=25oC; VGS=0V, ID=250uA	min 60 V	2
Breakdown voltage temperature coefficient ΔBVDSS / ΔTJ	ID=250uA, referenced to 25oC	typ 0.05 V/oC	2
Drain to source leakage current IDSS	TJ=25oC; VDS=60V, VGS=0V	max 1 uA	2
Drain to source leakage current IDSS	VDS=48V, TJ=125oC	max 50 uA	2
Gate to source leakage current, forward IGSS	TJ=25oC; VGS=20V, VDS=0V	max 100 nA	2
Gate to source leakage current, reverse IGSS	TJ=25oC; VGS=-20V, VDS=0V	max -100 nA	2
Gate threshold voltage VGS(TH)	TJ=25oC; VDS=VGS, ID=250uA	min 1.4 · max 2.4 V	2
Drain to source on state resistance RDS(ON)	VGS=4.5V, ID=5A,TJ=25oC	typ 9.9 · max 12.4 mΩ	2
Drain to source on state resistance RDS(ON)	VGS=10V, ID=5A,TJ=25oC	typ 8.3 · max 10.4 mΩ	2
Drain to source on state resistance RDS(ON)	VGS=10V, ID=5A,TJ=125oC	typ 13.3 mΩ	2
Forward transconductance Gfs	TJ=25oC; VDS=10V, ID=5A	typ 25 S	2
Input capacitance Ciss	TJ=25oC; VGS=0V, VDS=30V, f=1MHz	typ 2010 pF	2
Output capacitance Coss	TJ=25oC; VGS=0V, VDS=30V, f=1MHz	typ 207 pF	2
Reverse transfer capacitance Crss	TJ=25oC; VGS=0V, VDS=30V, f=1MHz	typ 165 pF	2
Turn on delay time td(on)	VDS=30V, ID=11A, RG=4.7Ω, VGS=10V; notes 4,5	typ 12 ns	2
Rising time tr	VDS=30V, ID=11A, RG=4.7Ω, VGS=10V; notes 4,5	typ 42 ns	2
Turn off delay time td(off)	VDS=30V, ID=11A, RG=4.7Ω, VGS=10V; notes 4,5	typ 45 ns	2
Fall time tf	VDS=30V, ID=11A, RG=4.7Ω, VGS=10V; notes 4,5	typ 20 ns	2
Total gate charge Qg	VDS=48V, VGS=10V, ID=11A, IG=3mA; notes 4,5	typ 49 nC	2
Gate-source charge Qgs	VDS=48V, VGS=10V, ID=11A, IG=3mA; notes 4,5	typ 6 nC	2
Gate-drain charge Qgd	VDS=48V, VGS=10V, ID=11A, IG=3mA; notes 4,5	typ 15 nC	2
Gate resistance Rg	TJ=25oC; VDS=0V, Scan F mode	typ 1.47 Ω	2
Continuous source current IS	Integral reverse p-n Junction diode in the MOSFET	max 50 A	2
Pulsed source current ISM	Integral reverse p-n Junction diode in the MOSFET	max 200 A	2
Diode forward voltage drop. VSD	TJ=25oC; IS=11A, VGS=0V	max 1.4 V	2
Reverse recovery time trr	TJ=25oC; IS=11A, VGS=0V, dIF/dt=100A/us	typ 27 ns	2
Reverse recovery charge Qrr	TJ=25oC; IS=11A, VGS=0V, dIF/dt=100A/us	typ 12 nC	2

Pins, by the datasheet

1 Source: Source. · p. 1
2 Source: Source. · p. 1
3 Source: Source. · p. 1
4 Gate: Gate. · p. 1
5 Drain: Drain. · p. 1
6 Drain: Drain. · p. 1
7 Drain: Drain. · p. 1
8 Drain: Drain. · p. 1

Ordering codes, by the datasheet

SW HA 088R06VT: DFN5*6 · Marking SW088R06VT; REEL packaging · p. 1

Parameters

Current - Continuous Drain(Id): 50A
Drain to Source Voltage: 60V
Gate Charge(Qg): 49nC@10V
Gate Threshold Voltage (Vgs(th)): 2.4V
Input Capacitance(Ciss): 2.01nF
Junction Temperature(Max): 150℃
Number: 1 N-channel
Operating Temperature: -55℃~+150℃
Output Capacitance(Coss): 207pF
Pd - Power Dissipation: 40.3W
RDS(on): 9.9mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds): 165pF
Thermal Resistance(Junction to Ambient): 45℃/W
Thermal Resistance(Junction to Case): 3.1℃/W
Type: N-Channel
Vgs: ±20V

Order codes

SWHA088R06VTLCSC C5151871

Pinout

The pins of the SWHA088R06VT
Pin	Name	Type
1	S	Passive
2	S	Passive
3	S	Passive
4	G	Input
5	D	Passive
6	D	Passive
7	D	Passive
8	D	Passive
9	D	Passive

Open-source boards using it

All 1

4 layers77.6 × 30.1 mm
SMDU
nakaaka/KiCad

91 parts

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Questions

Is there a KiCad symbol and footprint for the SWHA088R06VT?

Yes. The symbol is Pinmap_Generic:Q_NMOS_1S_2S_3S_4G_5D_6D_7D_8D_9D and the footprint EasyEDA_Cloud:DFN-8_L6.0-W5.0-P1.27-LS6.2-BL_VBQA2309, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the SWHA088R06VT?

DFN-8(5x6), with 9 pins. Its footprint is drawn on this page.

Where is the SWHA088R06VT datasheet?

Samwin publishes it: the Datasheet link on this page opens it.

Where can I order the SWHA088R06VT?

JLCPCB lists it as part C5151871, with 100 in stock; the sellers' links on this page open their listings.

What can replace the SWHA088R06VT?

Parts like it in the library: the CRSM038N10N4 by CRMICRO and the WSD100N06GDN56 by Winsok Semicon. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the SWHA088R06VT?

1 board in 1 repository on GitHub; the most starred are listed on this page, with their KiCad files.