

Overview
The NTF6P02 is a MOSFET made by onsemi in a SOT-223 package with 4 pins. -55℃~+150℃ 1 P-Channel 1.2nF 10A 150pF 1V 20V 44mΩ@4.5V 500pF 8.3W P-Channel SOT-223 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PMOS_1G_2D_3S_4D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-223, from KiCad's library), ready for a KiCad board. 5,479 are in stock at JLCPCB (part C179617). 5 open-source boards in 3 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
10- Drain-source, most
- 20 V · Drain−to−Source Voltage, absolute maximum · p. 1
- Gate-source, most
- 8 V · Gate−to−Source Voltage, absolute maximum ±8.0 V · p. 1
- Drain current, most
- 10 A · Continuous drain current, max at TA = 25°C, steady state · p. 1
- Junction, hottest
- 150 °C · Junction temperature, absolute maximum · p. 1
- Junction to air (SOT−223)
- 71.4 K/W · Junction to ambient, 1 inch pad, steady state · p. 1
- Junction to air (SOT−223)
- 160 K/W · Junction to ambient, minimum recommended pad, steady state · p. 1
- Gate threshold
- 700 mV · Gate threshold, typical at VDS = VGS, ID = −250 mAdc · p. 2
- On resistance
- 44 mΩ · Typical at VGS = −4.5 Vdc, ID = −6.0 Adc · p. 2
- On resistance
- 57 mΩ · Typical at VGS = −2.5 Vdc, ID = −4.0 Adc · p. 2
- Edge
- 25 ns · Rise time, typical at VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W · p. 2
What it is and has
4- Gate drive
- Logic level · p. 1
- Diode recovery
- High speed, soft recovery · p. 1
- Avalanche energy
- Specified · p. 1
- Compliance
- Pb−Free and RoHS compliant · p. 1
Specifications
47| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain−to−Source Voltage VDSS | TJ = 25°C | max -20 Vdc | 1 |
| Gate−to−Source Voltage VGS | TJ = 25°C; rating ±8.0 Vdc | max 8 Vdc | 1 |
| Drain Current (Note 1) − Continuous @ TA = 25°C ID | Steady State | max -10 Adc | 1 |
| Drain Current (Note 1) − Single Pulse (tp = 10 ms) IDM | TJ = 25°C | max -35 Apk | 1 |
| Total Power Dissipation @ TA = 25°C PD | TA = 25°C | max 8.3 W | 1 |
| Operating and Storage Temperature Range TJ, Tstg | Lower limit | min -55 °C | 1 |
| Operating and Storage Temperature Range TJ, Tstg | Upper limit | max 150 °C | 1 |
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C EAS | VDD = −20 Vdc, VGS = −5.0 Vdc, IL(pk) = −10 A, L = 3.0 mH, RG = 25W | max 150 mJ | 1 |
| Thermal Resistance − Junction to Lead (Note 1) RqJL | SOT−223; Steady State | max 15 °C/W | 1 |
| Thermal Resistance − Junction to Ambient (Note 2) RqJA | SOT−223; surface mounted to an FR4 board using 1” pad size, Cu. Area 1.127 sq in; Steady State | max 71.4 °C/W | 1 |
| Thermal Resistance − Junction to Ambient (Note 3) RqJA | SOT−223; surface mounted to an FR4 board using minimum recommended pad size, Cu. Area 0.412 sq in; Steady State | max 160 °C/W | 1 |
| Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL | 1/8″ from case for 10 seconds | max 260 °C | 1 |
| Drain−to−Source Breakdown Voltage (Note 4) V(BR)DSS | TJ = 25°C; VGS = 0 Vdc, ID = −250 mAdc; Note 4 | min -20 · typ -25 Vdc | 2 |
| Temperature Coefficient (Positive) | Drain−to−Source Breakdown Voltage | typ -11 mV/°C | 2 |
| Zero Gate Voltage Drain Current IDSS | TJ = 25°C; VDS = −20 Vdc, VGS = 0 Vdc | max -1 mAdc | 2 |
| Zero Gate Voltage Drain Current IDSS | VDS = −20 Vdc, VGS = 0 Vdc, TJ = 125°C | max -10 mAdc | 2 |
| Gate−Body Leakage Current IGSS | TJ = 25°C; VGS = ± 8.0 Vdc, VDS = 0 Vdc; maximum magnitude ±100 nAdc | max 100 nAdc | 2 |
| Gate Threshold Voltage (Note 4) VGS(th) | TJ = 25°C; VDS = VGS, ID = −250 mAdc; Note 4 | min -0.4 · typ -0.7 · max -1 Vdc | 2 |
| Threshold Temperature Coefficient (Negative) | Gate Threshold Voltage | typ 2.6 mV/°C | 2 |
| Static Drain−to−Source On−Resistance (Note 4) RDS(on) | TJ = 25°C; VGS = −4.5 Vdc, ID = −6.0 Adc; Note 4 | typ 44 · max 50 mW | 2 |
| Static Drain−to−Source On−Resistance (Note 4) RDS(on) | TJ = 25°C; VGS = −2.5 Vdc, ID = −4.0 Adc; Note 4 | typ 57 · max 70 mW | 2 |
| Static Drain−to−Source On−Resistance (Note 4) RDS(on) | TJ = 25°C; VGS = −2.5 Vdc, ID = −3.0 Adc; Note 4 | typ 57 mW | 2 |
| Forward Transconductance (Note 4) gfs | TJ = 25°C; VDS = −10 Vdc, ID = −6.0 Adc; Note 4 | typ 12 Mhos | 2 |
| Input Capacitance Ciss | TJ = 25°C; VDS = −16 Vdc, VGS = 0 V, f = 1.0 MHz | typ 900 · max 1200 pF | 2 |
| Output Capacitance Coss | TJ = 25°C; VDS = −16 Vdc, VGS = 0 V, f = 1.0 MHz | typ 350 · max 500 pF | 2 |
| Transfer Capacitance Crss | TJ = 25°C; VDS = −16 Vdc, VGS = 0 V, f = 1.0 MHz | typ 90 · max 150 pF | 2 |
| Input Capacitance Ciss | TJ = 25°C; VDS = −10 Vdc, VGS = 0 V, f = 1.0 MHz | typ 940 pF | 2 |
| Output Capacitance Coss | TJ = 25°C; VDS = −10 Vdc, VGS = 0 V, f = 1.0 MHz | typ 410 pF | 2 |
| Transfer Capacitance Crss | TJ = 25°C; VDS = −10 Vdc, VGS = 0 V, f = 1.0 MHz | typ 110 pF | 2 |
| Turn−On Delay Time td(on) | VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W; Note 5 | typ 7 · max 12 ns | 2 |
| Rise Time tr | VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W; Note 5 | typ 25 · max 45 ns | 2 |
| Turn−Off Delay Time td(off) | VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W; Note 5 | typ 75 · max 125 ns | 2 |
| Fall Time tf | VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W; Note 5 | typ 50 · max 85 ns | 2 |
| Turn−On Delay Time td(on) | VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 W; Note 5 | typ 8 ns | 2 |
| Rise Time tr | VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 W; Note 5 | typ 30 ns | 2 |
| Turn−Off Delay Time td(off) | VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 W; Note 5 | typ 60 ns | 2 |
| Fall Time tf | VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 W; Note 5 | typ 60 ns | 2 |
| Gate Charge QT | TJ = 25°C; VDS = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc; Note 4 | typ 15 · max 20 nC | 2 |
| Gate Charge Qgs | TJ = 25°C; VDS = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc; Note 4 | typ 1.7 nC | 2 |
| Gate Charge Qgd | TJ = 25°C; VDS = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc; Note 4 | typ 6 nC | 2 |
| Forward On−Voltage VSD | TJ = 25°C; IS = −3.0 Adc, VGS = 0 Vdc; Note 4 | typ -0.82 · max -1.2 Vdc | 2 |
| Forward On−Voltage VSD | TJ = 25°C; IS = −2.1 Adc, VGS = 0 Vdc; Note 4 | typ -0.74 Vdc | 2 |
| Forward On−Voltage VSD | IS = −3.0 Adc, VGS = 0 Vdc, TJ = 125°C; Note 4 | typ -0.68 Vdc | 2 |
| Reverse Recovery Time trr | TJ = 25°C; IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms; Note 4 | typ 42 ns | 2 |
| Reverse Recovery Time ta | TJ = 25°C; IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms; Note 4 | typ 17 ns | 2 |
| Reverse Recovery Time tb | TJ = 25°C; IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms; Note 4 | typ 25 ns | 2 |
| Reverse Recovery Stored Charge QRR | TJ = 25°C; IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms; Note 4 | typ 0.036 mC | 2 |
Pins, by the datasheet
4- 1 Gate
- Gate. · p. 1
- 2 Drain
- Drain. · p. 1
- 3 Source
- Source. · p. 1
- 4 Drain
- Drain tab. · p. 1
Ordering codes, by the datasheet
2- NTF6P02T3G
- SOT−223 (Pb−Free) · 4000 / Tape & Reel · p. 1
- NVF6P02T3G
- SOT−223 (Pb−Free) · Automotive NVF prefix; AEC−Q101 qualified and PPAP capable; 4000 / Tape & Reel · p. 1
Parameters
16- Current - Continuous Drain(Id)
- 10A
- Drain to Source Voltage
- 20V
- Gate Charge(Qg)
- 15nC
- Gate Threshold Voltage (Vgs(th))
- 700mV
- Input Capacitance(Ciss)
- 1.2nF
- Junction Temperature(Max)
- 150℃
- Number
- 1 P-Channel
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 500pF
- Pd - Power Dissipation
- 8.3W
- RDS(on)
- 44mΩ@4.5V
- Reverse Transfer Capacitance (Crss@Vds)
- 150pF
- Rise Time
- 25ns
- Thermal Resistance(Junction to Ambient)
- 160℃/W
- Type
- P-Channel
- Vgs
- ±8V
Order codes
1- NTF6P02T3GLCSC C179617
Pinout
4| Pin | Name | Type |
|---|---|---|
| 1 | G | Input |
| 2 | D | Passive |
| 3 | S | Passive |
| 4 | D | Passive |
Open-source boards using it
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Is there a KiCad symbol and footprint for the NTF6P02?
Yes. The symbol is Pinmap_Generic:Q_PMOS_1G_2D_3S_4D and the footprint Package_TO_SOT_SMD:SOT-223, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the NTF6P02?
SOT-223, with 4 pins. Its footprint is drawn on this page.
Where is the NTF6P02 datasheet?
onsemi publishes it: the Datasheet link on this page opens it.
Where can I order the NTF6P02?
JLCPCB lists it as part C179617, with 5,479 in stock; the sellers' links on this page open their listings.
What can replace the NTF6P02?
Parts like it in the library: the DMN3032LE by Diodes Incorporated, the HSL10N06 by HUASHUO, the BUK9840-55/CUX by Nexperia and the VBJ1203M by VBsemi Elec. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the NTF6P02?
5 boards in 3 repositories on GitHub; the most starred are listed on this page, with their KiCad files.
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