2 layers111.2 × 122.7 mm
UniversalNode
DPIclimate/ag-node
Automatic multi-weigh-station for measuring the live-weight of sheep in remote locations.
83 parts2MIT
MMBT4403L
onsemiExtended
-55℃~+150℃ 1 PNP 100nA 200MHz 225mW 30 400mV 40V 5V 600mA PNP SOT-23 Bipolar (BJT) ROHS
- Part id
- onsemi/MMBT4403L
- Category
- Bipolar (BJT)
- Package
- SOT-23
- Pins
- 3
- In stock
- 146,438 at JLCPCB (C78864)
- Used on
- 1 open-source board
Overview
The MMBT4403L is a bipolar made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 PNP 100nA 200MHz 225mW 30 400mV 40V 5V 600mA PNP SOT-23 Bipolar (BJT) ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PNP_1B_2E_3C, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 146,438 are in stock at JLCPCB (part C78864). 1 open-source board in 1 repository on GitHub use it.
Symbol
Footprint
From the datasheet
9- Collector-emitter, most
- 40 V · Collector−emitter voltage, absolute maximum · p. 1
- Collector current, most
- 600 mA · Continuous collector current, absolute maximum · p. 1
- Junction, hottest
- 150 °C · Junction temperature, max · p. 1
- Junction to air (SOT−23 (TO−236))
- 556 K/W · Junction to ambient, max, FR−5 board · p. 1
- Junction to air (SOT−23 (TO−236))
- 417 K/W · Junction to ambient, max, alumina substrate · p. 1
- Current gain, least
- 30 · DC current gain, min, IC = −0.1 mAdc, VCE = −1.0 Vdc · p. 2
- Current gain, least
- 60 · DC current gain, min, IC = −1.0 mAdc, VCE = −1.0 Vdc · p. 2
- Current gain, least
- 100 · DC current gain, min, IC = −10 mAdc, VCE = −1.0 Vdc · p. 2
- Current gain, least
- 20 · DC current gain, min, IC = −500 mAdc, VCE = −2.0 Vdc · p. 2
What it is and has
2- Transistor type
- PNP Silicon · p. 1
- Application
- Switching Transistor · p. 1
Specifications
37| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Collector −Emitter Voltage VCEO | max -40 Vdc | 1 | |
| Collector −Base Voltage VCBO | max -40 Vdc | 1 | |
| Emitter −Base Voltage VEBO | max -5 Vdc | 1 | |
| Collector Current − Continuous IC | max -600 mAdc | 1 | |
| Collector Current − Peak ICM | max -900 mAdc | 1 | |
| Total Device Dissipation FR− 5 Board PD | Note 1, TA = 25°C | max 225 mW | 1 |
| Derate above 25°C PD | FR− 5 Board, Note 1 | max 1.8 mW/°C | 1 |
| Thermal Resistance, Junction−to−Ambient RqJA | FR− 5 Board, Note 1 | max 556 °C/W | 1 |
| Total Device Dissipation Alumina Substrate PD | Note 2, TA = 25°C | max 300 mW | 1 |
| Derate above 25°C PD | Alumina Substrate, Note 2 | max 2.4 mW/°C | 1 |
| Thermal Resistance, Junction−to−Ambient RqJA | Alumina Substrate, Note 2 | max 417 °C/W | 1 |
| Junction and Storage Temperature TJ, Tstg | min -55 · max 150 °C | 1 | |
| Collector −Emitter Breakdown Voltage (Note 3) V(BR)CEO | TA = 25°C; IC = −1.0 mAdc, IB = 0 | min -40 Vdc | 2 |
| Collector −Base Breakdown Voltage V(BR)CBO | TA = 25°C; IC = −0.1 mAdc, IE = 0 | min -40 Vdc | 2 |
| Emitter −Base Breakdown Voltage V(BR)EBO | TA = 25°C; IE = −0.1 mAdc, IC = 0 | min -5 Vdc | 2 |
| Base Cutoff Current IBEV | TA = 25°C; VCE = −35 Vdc, VEB = −0.4 Vdc | max -0.1 mAdc | 2 |
| Collector Cutoff Current ICEX | TA = 25°C; VCE = −35 Vdc, VEB = −0.4 Vdc | max -0.1 mAdc | 2 |
| DC Current Gain hFE | TA = 25°C; IC = −0.1 mAdc, VCE = −1.0 Vdc | min 30 − | 2 |
| DC Current Gain hFE | TA = 25°C; IC = −1.0 mAdc, VCE = −1.0 Vdc | min 60 − | 2 |
| DC Current Gain hFE | TA = 25°C; IC = −10 mAdc, VCE = −1.0 Vdc | min 100 − | 2 |
| DC Current Gain hFE | TA = 25°C; IC = −150 mAdc, VCE = −2.0 Vdc; Note 3 | min 100 · max 300 − | 2 |
| DC Current Gain hFE | TA = 25°C; IC = −500 mAdc, VCE = −2.0 Vdc; Note 3 | min 20 − | 2 |
| Collector −Emitter Saturation Voltage (Note 3) VCE(sat) | TA = 25°C; IC = −150 mAdc, IB = −15 mAdc | max -0.4 Vdc | 2 |
| Collector −Emitter Saturation Voltage (Note 3) VCE(sat) | TA = 25°C; IC = −500 mAdc, IB = −50 mAdc | max -0.75 Vdc | 2 |
| Base −Emitter Saturation Voltage (Note 3) VBE(sat) | TA = 25°C; IC = −150 mAdc, IB = −15 mAdc | min -0.75 · max -0.95 Vdc | 2 |
| Base −Emitter Saturation Voltage (Note 3) VBE(sat) | TA = 25°C; IC = −500 mAdc, IB = −50 mAdc | max -1.3 Vdc | 2 |
| Current −Gain − Bandwidth Product fT | TA = 25°C; IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz | min 200 MHz | 2 |
| Collector−Base Capacitance Ccb | TA = 25°C; VCB = −10 Vdc, IE = 0, f = 1.0 MHz | max 8.5 pF | 2 |
| Emitter−Base Capacitance Ceb | TA = 25°C; VBE = −0.5 Vdc, IC = 0, f = 1.0 MHz | max 30 pF | 2 |
| Input Impedance hie | TA = 25°C; IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz | min 1.5 · max 15 kW | 2 |
| Voltage Feedback Ratio hre | TA = 25°C; IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz | min 0.1 · max 8 X 10− 4 | 2 |
| Small −Signal Current Gain hfe | TA = 25°C; IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz | min 60 · max 500 − | 2 |
| Output Admittance hoe | TA = 25°C; IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz | min 1 · max 100 mMhos | 2 |
| Delay Time td | TA = 25°C; VCC = −30 Vdc, VEB = −2.0 Vdc, IC = −150 mAdc, IB1 = −15 mAdc | max 15 ns | 2 |
| Rise Time tr | TA = 25°C; VCC = −30 Vdc, VEB = −2.0 Vdc, IC = −150 mAdc, IB1 = −15 mAdc | max 20 ns | 2 |
| Storage Time ts | TA = 25°C; VCC = −30 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc | max 225 ns | 2 |
| Fall Time tf | TA = 25°C; VCC = −30 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc | max 30 ns | 2 |
Pins, by the datasheet
3- 1 BASE
- Base; STYLE 6. · p. 7
- 2 EMITTER
- Emitter; STYLE 6. · p. 7
- 3 COLLECTOR
- Collector; STYLE 6. · p. 7
Ordering codes, by the datasheet
3- MMBT4403LT1G
- SOT−23 · Pb−Free; 3000 / Tape & Reel · p. 1
- SMMBT4403LT1G
- SOT−23 · S prefix for automotive and other applications requiring unique site and control change requirements; AEC−Q101 qualified and PPAP capable; Pb−Free; 3000 / Tape & Reel · p. 1
- MMBT4403LT3G
- SOT−23 · Pb−Free; 10,000 / Tape & Reel · p. 1
Open-source boards using it
1Parts like it
8
SS8050
SOT-23-55℃~+150℃ 1 NPN 1.5A 100MHz 100nA 120 25V 300mW 500mV 5V NPN SOT-23 Bipolar (BJT) ROHShongjiachengBipolar (BJT)MMBT5551
SOT-23-55℃~+150℃ 1 NPN 100 100MHz 150mV 160V 300mW 50nA 600mA 6V NPN SOT-23 Bipolar (BJT) ROHShongjiachengBipolar (BJT)MMBT5401
SOT-23-55℃~+150℃ 1 PNP 100 100MHz 100nA 160V 200mV 300mW 5V 600mA PNP SOT-23 Bipolar (BJT) ROHShongjiachengBipolar (BJT)MMBT5551
SOT-23-55℃~+150℃ 1 NPN 160V 200 200mV 300MHz 300mW 50nA 600mA 6V NPN SOT-23 Bipolar (BJT) ROHSJiangsu Changjing Electronics Technology (CJ)Bipolar (BJT)SS8050
SOT-23-55℃~+150℃ 1 NPN 1.5A 100MHz 100nA 25V 300mW 400 500mV 5V NPN SOT-23 Bipolar (BJT) ROHSMDDBipolar (BJT)SS8550
SOT-23-55℃~+150℃ 1 PNP 1.5A 100MHz 100nA 120 25V 300mW 500mV 5V PNP SOT-23 Bipolar (BJT) ROHShongjiachengBipolar (BJT)MMBT5551
SOT-23-55℃~+150℃ 1 NPN 160V 200mV 300 300MHz 300mW 50nA 600mA 6V NPN SOT-23 Bipolar (BJT) ROHSMDDBipolar (BJT)MMBT2222A 1P
SOT-23-55℃~+150℃ 1 NPN 100 10nA 300MHz 300mW 40V 600mA 6V NPN SOT-23 Bipolar (BJT) ROHSJiangsu Changjing Electronics Technology (CJ)Bipolar (BJT)
Questions
Is there a KiCad symbol and footprint for the MMBT4403L?
Yes. The symbol is Pinmap_Generic:Q_PNP_1B_2E_3C and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the MMBT4403L?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the MMBT4403L datasheet?
onsemi publishes it: the Datasheet link on this page opens it.
Where can I order the MMBT4403L?
JLCPCB lists it as part C78864, with 146,438 in stock; the sellers' links on this page open their listings.
What can replace the MMBT4403L?
Parts like it in the library: the SS8050 by hongjiacheng, the MMBT5551 by hongjiacheng, the MMBT5401 by hongjiacheng and the MMBT5551 by Jiangsu Changjing Electronics Technology (CJ). Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the MMBT4403L?
1 board in 1 repository on GitHub; the most starred are listed on this page, with their KiCad files.