4 layers95.9 × 90.2 mm
Baikal be t100
chipiki/baikal_be-t1000
OpenHardware development board for Russian Baikal BE-T1000 MIPS Warrior P-class P5600 processor
381 parts6BSD-3-Clause
Overview
The FDV305N is a MOSFET made by onsemi in a SOT-23 package with 3 pins. -55℃~+150℃ 1 N-channel 1.5V 1.5nC@4.5V 109pF 14pF 20V 300mΩ@2.5V 30pF 350mW 900mA N-Channel SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_NMOS_1G_2S_3D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 33,208 are in stock at JLCPCB (part C154511). 6 open-source boards in 5 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
12- Drain-source, most
- 20 V · Drain-source voltage, absolute max · p. 2
- Gate-source, most
- 12 V · Gate-source voltage, absolute max ±12 V · p. 2
- Drain current, most
- 900 mA · Continuous drain current, max at TA = 25°C · p. 2
- Junction, hottest
- 150 °C · Operating junction temperature, max · p. 2
- Junction to air (SOT-23)
- 357 K/W · Junction-to-ambient thermal resistance, max · p. 2
- Gate threshold
- 1 V · Gate threshold, typical at VDS = VGS, ID = 250 uA · p. 3
- On resistance
- 220 mΩ · On-resistance, max at VGS = 4.5 V, ID = 0.9 A · p. 3
- On resistance
- 300 mΩ · On-resistance, max at VGS = 2.5 V, ID = 0.7 A · p. 3
- On resistance
- 303 mΩ · On-resistance, max at VGS = 4.5 V, ID = 0.9 A, TJ = 125°C · p. 3
- Edge
- 1.4 ns · Turn-off fall time, typical at VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω · p. 3
- Forward current, most
- 290 mA · Drain-source diode continuous forward current, max · p. 3
- Forward voltage
- 750 mV · Drain-source diode forward voltage, typical at IS = 0.29 A, VGS = 0 V · p. 3
What it is and has
4- MOSFET technology
- 20V N-Channel PowerTrench MOSFET · p. 2
- Gate charge
- Low gate charge · p. 2
- Switching
- Fast switching speed · p. 2
- Package
- SOT-23 · p. 2
Specifications
33| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDSS | TA=25oC unless otherwise noted | max 20 V | 2 |
| Gate-Source Voltage VGSS | TA=25oC unless otherwise noted | min -12 · max 12 V | 2 |
| Drain Current – Continuous ID | TA=25oC unless otherwise noted | max 0.9 A | 2 |
| Drain Current – Pulsed ID | TA=25oC unless otherwise noted | max 2 A | 2 |
| Maximum Power Dissipation PD | TA=25oC unless otherwise noted | max 0.35 W | 2 |
| Operating and Storage Junction Temperature Range TJ, TSTG | min -55 · max 150 °C | 2 | |
| Thermal Resistance, Junction-to-Ambient RθJA | SOT-23 | max 357 °C/W | 2 |
| Drain–Source Breakdown Voltage BVDSS | TA = 25°C; VGS = 0 V, ID = 250 uA | min 20 V | 3 |
| Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ | ID = 250 uA,Referenced to 25°C | typ 15 mV/°C | 3 |
| Zero Gate Voltage Drain Current IDSS | TA = 25°C; VDS = 16 V, VGS = 0 V | max 1 uA | 3 |
| Gate–Body Leakage, Forward IGSSF | TA = 25°C; VGS = 12 V, VDS = 0 V | max 100 nA | 3 |
| Gate–Body Leakage, Reverse IGSSR | TA = 25°C; VGS = –12 V, VDS = 0 V | max -100 nA | 3 |
| Gate Threshold Voltage VGS(th) | TA = 25°C; VDS = VGS, ID = 250 uA | min 0.6 · typ 1 · max 1.5 V | 3 |
| Gate Threshold Voltage Temperature Coefficient ∆VGS(th)/∆TJ | ID = 250 uA,Referenced to 25°C | typ -3 mV/°C | 3 |
| Static Drain–Source On–Resistance RDS(on) | TA = 25°C; VGS = 4.5 V, ID = 0.9 A | typ 164 · max 220 mΩ | 3 |
| Static Drain–Source On–Resistance RDS(on) | TA = 25°C; VGS = 2.5 V, ID = 0.7 A | typ 235 · max 300 mΩ | 3 |
| Static Drain–Source On–Resistance RDS(on) | VGS = 4.5V, ID = 0.9 A, TJ = 125°C | typ 220 · max 303 mΩ | 3 |
| On–State Drain Current ID(on) | TA = 25°C; VGS = 4.5V, VDS = 5 V | min 1 A | 3 |
| Forward Transconductance gFS | TA = 25°C; VDS = 5V, ID = 0.9 A | typ 3 S | 3 |
| Input Capacitance Ciss | TA = 25°C; VDS = 10 V, V GS = 0 V, f = 1.0 MHz | typ 109 pF | 3 |
| Output Capacitance Coss | TA = 25°C; VDS = 10 V, V GS = 0 V, f = 1.0 MHz | typ 30 pF | 3 |
| Reverse Transfer Capacitance Crss | TA = 25°C; VDS = 10 V, V GS = 0 V, f = 1.0 MHz | typ 14 pF | 3 |
| Turn–On Delay Time td(on) | TA = 25°C; VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | typ 4.5 · max 9 ns | 3 |
| Turn–On Rise Time tr | TA = 25°C; VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | typ 7 · max 14 ns | 3 |
| Turn–Off Delay Time td(off) | TA = 25°C; VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | typ 8 · max 16 ns | 3 |
| Turn–Off Fall Time tf | TA = 25°C; VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω | typ 1.4 · max 2.8 ns | 3 |
| Total Gate Charge Qg | TA = 25°C; VDS = 10 V, ID = 0.9 A, VGS = 4.5 V | typ 1.1 · max 1.5 nC | 3 |
| Gate–Source Charge Qgs | TA = 25°C; VDS = 10 V, ID = 0.9 A, VGS = 4.5 V | typ 0.26 nC | 3 |
| Gate–Drain Charge Qgd | TA = 25°C; VDS = 10 V, ID = 0.9 A, VGS = 4.5 V | typ 0.26 nC | 3 |
| Maximum Continuous Drain–Source Diode Forward Current IS | TA = 25°C | max 0.29 A | 3 |
| Drain–Source Diode Forward Voltage VSD | TA = 25°C; VGS = 0 V, IS = 0.29 A | typ 0.75 · max 1.2 V | 3 |
| Diode Reverse Recovery Time trr | TA = 25°C; IF = 0.9 A, diF/dt = 100 A/us | typ 7.4 nS | 3 |
| Diode Reverse Recovery Charge Qrr | TA = 25°C; IF = 0.9 A, diF/dt = 100 A/us | typ 2.2 nC | 3 |
Ordering codes, by the datasheet
1- FDV305N
- SOT-23 · Device marking 305; 7’’ reel, 8mm tape width, 3000 units · p. 2
Parameters
18- Current - Continuous Drain(Id)
- 900mA
- Drain to Source Voltage
- 20V
- Forward Current(If)
- 290mA
- Gate Charge(Qg)
- 1.5nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1V
- Input Capacitance(Ciss)
- 109pF
- Junction Temperature(Max)
- 150℃
- Number
- 1 N-channel
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 30pF
- Pd - Power Dissipation
- 350mW
- RDS(on)
- 300mΩ@2.5V
- Reverse Transfer Capacitance (Crss@Vds)
- 14pF
- Rise Time
- 1.4ns
- Thermal Resistance(Junction to Ambient)
- 357℃/W
- Type
- N-Channel
- Vgs
- ±12V
- Voltage - Forward(Vf)
- 750mV
Order codes
1- FDV305NLCSC C154511
Pinout
3| Pin | Name | Type |
|---|---|---|
| 1 | G | Input |
| 2 | S | Passive |
| 3 | D | Passive |
Open-source boards using it
All 6- 4 layers98.8 × 51.1 mm
- 2 layers99.8 × 88.8 mm
Access control
Bekir111/access_control_hardware
This repository contains the KiCad schematics and PCB designs for the Access Control System.
78 parts - 4 layers100 × 100 mm
- 4 layers100 × 100 mm
- 4 layers57.5 × 30.5 mm
Show this part on your page
<iframe src="https://pcbkit.io/embed/parts/onsemi/FDV305N" title="FDV305N in PCBKit" width="100%" height="480" style="border:0;border-radius:12px" allow="fullscreen" loading="lazy"></iframe><img src="https://pcbkit.io/embed/parts/onsemi/FDV305N.jpg" alt="FDV305N" width="1200" height="900">[](https://pcbkit.io/parts/onsemi/FDV305N)Questions
Is there a KiCad symbol and footprint for the FDV305N?
Yes. The symbol is Pinmap_Generic:Q_NMOS_1G_2S_3D and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the FDV305N?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the FDV305N datasheet?
onsemi publishes it: the Datasheet link on this page opens it.
Where can I order the FDV305N?
JLCPCB lists it as part C154511, with 33,208 in stock; the sellers' links on this page open their listings.
What can replace the FDV305N?
Parts like it in the library: the AO3400 by GOODWORK, the AP2300 by ALLPOWER, the SI2302-2.3A-JSM by JSMSEMI and the SI2301-A1SHB by JSMSEMI. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the FDV305N?
6 boards in 5 repositories on GitHub; the most starred are listed on this page, with their KiCad files.
Parts like it
8
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