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2N7002

NexperiaExtended

-65℃~+150℃ 1 N-channel 2.5V 300mA 50pF 5Ω@10V 60V 830mW SOT-23 MOSFETs ROHS

DatasheetJLCPCBLCSC
Part id
nexperia/2N7002
Category
MOSFETs
Package
SOT-23
Pins
3
In stock
541,788 at JLCPCB (C65189)

Overview

The 2N7002 is a MOSFET made by Nexperia in a SOT-23 package with 3 pins. -65℃~+150℃ 1 N-channel 2.5V 300mA 50pF 5Ω@10V 60V 830mW SOT-23 MOSFETs ROHS.

PCBKit's library has its KiCad symbol (Transistor_FET:2N7002, from KiCad's library) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 541,788 are in stock at JLCPCB (part C65189).

Symbol

123
Transistor_FET:2N7002From KiCad's library

Footprint

123
Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

10
Drain-source, most
60 V · max drain-source voltage, 25 °C ≤ Tj ≤ 150 °C · p. 2
Drain current, most
300 mA · max continuous drain current, VGS = 10 V; Tsp = 25 °C · p. 2
Gate-source, most
30 V · max gate-source voltage · p. 2
Junction, hottest
150 °C · max junction temperature · p. 2
Junction to air (SOT23)
350 K/W · max junction-to-ambient resistance, PCB minimum footprint, vertical in still air · p. 4
Gate threshold
2 V · typical threshold, ID = 0.25 mA; VDS = VGS; Tj = 25 °C · p. 5
On resistance
2.8 Ω · typical VGS = 10 V; ID = 500 mA; Tj = 25 °C · p. 5
On resistance
3.8 Ω · typical VGS = 4.5 V; ID = 75 mA; Tj = 25 °C · p. 5
Forward voltage
850 mV · typical source-drain diode voltage, IS = 300 mA; VGS = 0 V; Tj = 25 °C · p. 5
Forward current, most
300 mA · max continuous source-drain diode current, Tsp = 25 °C · p. 2

What it is and has

3
Technology
N-channel enhancement mode Trench MOSFET · p. 1
Switching
Very fast switching · p. 1
Package
TO-236AB (SOT23), plastic surface-mounted package; 3 leads · p. 2

Specifications

37
ParameterConditionsAs printedPage
drain-source voltage VDS25 °C ≤ Tj ≤ 150 °Cmax 60 V1
drain current IDVGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3max 300 mA1
total power dissipation PtotTsp = 25 °C; see Figure 2max 0.83 W1
drain-source on-state resistance RDSonVGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 6; see Figure 8typ 2.8 · max 5 Ω1
drain-source voltage VDS25 °C ≤ Tj ≤ 150 °Cmax 60 V2
drain-gate voltage VDGR25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩmax 60 V2
gate-source voltage VGSmin -30 · max 30 V2
peak gate-source voltage VGSMpulsed; tp ≤ 50 us; δ = 0.25min -40 · max 40 V2
drain current IDVGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3max 300 mA2
drain current IDVGS = 10 V; Tsp = 100 °C; see Figure 1max 190 mA2
peak drain current IDMpulsed; tp ≤ 10 us; Tsp = 25 °C; see Figure 3max 1.2 A2
total power dissipation PtotTsp = 25 °C; see Figure 2max 0.83 W2
junction temperature Tjmin -65 · max 150 °C2
storage temperature Tstgmin -65 · max 150 °C2
source current ISSource-drain diode; Tsp = 25 °Cmax 300 mA2
peak source current ISMSource-drain diode; pulsed; tp ≤ 10 us; Tsp = 25 °Cmax 1.2 A2
thermal resistance from junction to ambient Rth(j-a)Mounted on a printed-circuit board; minimum footprint ; vertical in still airmax 350 K/W4
thermal resistance from junction to solder point Rth(j-sp)see Figure 4max 150 K/W4
drain-source breakdown voltage V(BR)DSSID = 10 uA; VGS = 0 V; Tj = 25 °Cmin 60 V5
drain-source breakdown voltage V(BR)DSSID = 10 uA; VGS = 0 V; Tj = -55 °Cmin 55 V5
gate-source threshold voltage VGSthID = 0.25 mA; VDS = VGS; Tj = 25 °C; see Figure 9; see Figure 10min 1 · typ 2 · max 2.5 V5
gate-source threshold voltage VGSthID = 0.25 mA; VDS = VGS; Tj = 150 °C; see Figure 9; see Figure 10min 0.6 V5
gate-source threshold voltage VGSthID = 0.25 mA; VDS = VGS; Tj = -55 °C; see Figure 9; see Figure 10max 2.75 V5
drain leakage current IDSSVDS = 48 V; VGS = 0 V; Tj = 25 °Ctyp 0.01 · max 1 uA5
drain leakage current IDSSVDS = 48 V; VGS = 0 V; Tj = 150 °Cmax 10 uA5
gate leakage current IGSSVGS = 15 V; VDS = 0 V; Tj = 25 °Ctyp 10 · max 100 nA5
gate leakage current IGSSVGS = -15 V; VDS = 0 V; Tj = 25 °Ctyp 10 · max 100 nA5
drain-source on-state resistance RDSonVGS = 10 V; ID = 500 mA; Tj = 150 °C; see Figure 6; see Figure 8max 9.25 Ω5
drain-source on-state resistance RDSonVGS = 4.5 V; ID = 75 mA; Tj = 25 °C; see Figure 6; see Figure 8typ 3.8 · max 5.3 Ω5
input capacitance CissVDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °Ctyp 31 · max 50 pF5
output capacitance CossVDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °Ctyp 6.8 · max 30 pF5
reverse transfer capacitance CrssVDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °Ctyp 3.5 · max 10 pF5
turn-on time tonVGS = 10 V; VDS = 50 V; RL = 250 Ω; RG(ext) = 50 Ω; RGS = 50 Ωtyp 2.5 · max 10 ns5
turn-off time toffVGS = 10 V; VDS = 50 V; RL = 250 Ω; RG(ext) = 50 Ω; RGS = 50 Ωtyp 11 · max 15 ns5
source-drain voltage VSDIS = 300 mA; VGS = 0 V; Tj = 25 °C; see Figure 11typ 0.85 · max 1.5 V5
recovered charge QrVGS = 0 V; IS = 300 mA; dIS/dt = -100 A/ustyp 30 nC5
reverse recovery time trrVGS = 0 V; IS = 300 mA; dIS/dt = -100 A/ustyp 30 ns5

Pins, by the datasheet

3
1 G
gate · p. 1
2 S
source · p. 1
3 D
drain · p. 1

Ordering codes, by the datasheet

1
2N7002
TO-236AB (SOT23) · plastic surface-mounted package; 3 leads · p. 2

Parts like it

8

Questions

Is there a KiCad symbol and footprint for the 2N7002?

Yes. The symbol is Transistor_FET:2N7002 and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the 2N7002?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the 2N7002 datasheet?

Nexperia publishes it: the Datasheet link on this page opens it.

Where can I order the 2N7002?

JLCPCB lists it as part C65189, with 541,788 in stock; the sellers' links on this page open their listings.

What can replace the 2N7002?

Parts like it in the library: the RC60P04Y by RealChip, the FH0306 by XIN FEI HONG, the VS2N7002K by Vergiga and the 2310 by TF. Check their datasheets: a part that fits the footprint may still differ in its ratings.