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MDD3415

MDDExtended

-50℃~+150℃ 1 P-Channel 1.5W 14.2nC@4.5V 20V 37mΩ@4.5V 4.8A 400mV 675pF 85pF SOT-23 MOSFETs ROHS

DatasheetJLCPCBLCSC
Part id
mdd/MDD3415
Category
MOSFETs
Package
SOT-23
Pins
3
In stock
381,887 at JLCPCB (C840839)
Used on
1 open-source board

Overview

The MDD3415 is a MOSFET made by MDD in a SOT-23 package with 3 pins. -50℃~+150℃ 1 P-Channel 1.5W 14.2nC@4.5V 20V 37mΩ@4.5V 4.8A 400mV 675pF 85pF SOT-23 MOSFETs ROHS.

PCBKit's library has its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 381,887 are in stock at JLCPCB (part C840839). 1 open-source board in 1 repository on GitHub use it.

Symbol

The library has no symbol for this part yet.

Footprint

123
Package_TO_SOT_SMD:SOT-23From KiCad's library

From the datasheet

12
Drain-source, most
20 V · Drain-source voltage, absolute max · p. 1
Gate-source, most
8 V · Gate-source voltage magnitude, max ±8 V · p. 1
Drain current, most
4.8 A · Continuous drain current, max at TA = 25 °C · p. 1
Junction, hottest
150 °C · Operating junction temperature, max · p. 1
Junction to air (SOT-23)
80 K/W · Junction-to-ambient, PCB mounted, max · p. 1
Gate threshold
700 mV · Gate threshold, typical at VDS = VGS, ID = -250 uA · p. 2
On resistance
37 mΩ · Typical at VGS = -4.5 V, ID = -4 A · p. 2
On resistance
43 mΩ · Typical at VGS = -3.3 V, ID = -3 A · p. 2
On resistance
52 mΩ · Typical at VGS = -2.5 V, ID = -2 A · p. 2
Edge
11 ns · Turn-on rise time, typical at VDS = -10 V, VGS = -4.5 V · p. 2
Forward voltage
830 mV · Body diode voltage, typical at IS = -2 A, VGS = 0 V · p. 2
Forward current, most
2 A · Continuous source-drain diode current, max at TC = 25 °C · p. 2

What it is and has

3
MOSFET type
-20V P-Channel Enhancement Mode MOSFET · p. 1
Package
SOT-23 · p. 1
Features
Low on-state resistance, low gate charge, low gate voltages · p. 1

Specifications

31
ParameterConditionsAs printedPage
Drain-Source Voltage V(BR)DSSTA = 25°C unless otherwise notedmax -20 V1
Gate-Source Voltage VGSLimit ±8 V; TA = 25°C unless otherwise notedmin -8 · max 8 V1
Continuous Drain Current IDTA = 25 °Cmax -4.8 A1
Continuous Drain Current IDTA = 70 °Cmax -3.6 A1
Pulsed Drain Current 1) IDMPulse width limited by maximum junction temperaturemax -30 A1
Maximum Power Dissipation 2) PDTA = 25 °C; surface mounted on FR4 boardmax 1.5 W1
Maximum Power Dissipation 2) PDTA = 70 °C; surface mounted on FR4 boardmax 1 W1
Operating Junction and Storage Temperature Range TJ, Tstgmin -50 · max 150 °C1
Junction-to-Ambient Thermal Resistance (PCB mounted) RthJASOT-23; surface mounted on FR4 board; note 2max 80 °C/W1
Drain-source breakdown voltage V(BR) DSSVGS = 0V, ID =-250uA; Ta =25 ℃min -20 V2
Gate threshold voltage VGS(th)VDS =VGS, ID =-250uA; Ta =25 ℃min -0.4 · typ -0.7 · max -1.2 V2
Zero gate voltage drain current IDSSVDS =20V, VGS =0V (TA=25℃)max -1 uA2
Zero gate voltage drain current IDSSVDS =16V, VGS =0V (TA=125℃)max -100 uA2
Gate-body leakage current IGSSVDS =0V, VGS =±8V; maximum specified as ±10 uAmax 10 uA2
Drain-source on-state resistance(note1) RDS(on)VGS =-4.5V, ID = -4A; Ta =25 ℃typ 37 · max 45 mΩ2
Drain-source on-state resistance(note1) RDS(on)VGS =-3.3V, ID = -3A; Ta =25 ℃typ 43 · max 55 mΩ2
Drain-source on-state resistance(note1) RDS(on)VGS =-2.5V, ID =-2A; Ta =25 ℃typ 52 · max 65 mΩ2
Forward transconductance(note2) gFSVDS =-5V, ID =-4A; Ta =25 ℃min 8 S2
Input capacitance CissVDS =-10V,VGS =0V,f =1MHz; Ta =25 ℃typ 675 pF2
Output capacitance CossVDS =-10V,VGS =0V,f =1MHz; Ta =25 ℃typ 120 pF2
Reverse transfer capacitance CrssVDS =-10V,VGS =0V,f =1MHz; Ta =25 ℃typ 85 pF2
Gate resistance RgVDS =0V,VGS =0V,f =1MHz; Ta =25 ℃typ 6.5 Ω2
Total gate charge QgVDS =-10V,VGS =-4.5V,ID =-4A; Ta =25 ℃typ 14.2 nC2
Gate-Source charge QgsVDS =-10V,VGS =-4.5V,ID =-4A; Ta =25 ℃typ 3.2 nC2
Gate-drain charge QgdVDS =-10V,VGS =-4.5V,ID =-4A; Ta =25 ℃typ 5.8 nC2
Turn-on delay time (note3) td(on)VDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω; Ta =25 ℃typ 15 ns2
Turn-on rise time(note3) trVDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω; Ta =25 ℃typ 11 ns2
Turn-off delay time(note3) td(off)VDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω; Ta =25 ℃typ 22 ns2
Turn-off fall time(note3) tfVDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω; Ta =25 ℃typ 35 ns2
Continuous source-drain diode current ISTC=25℃max -2 A2
Body diode voltage (note 2) VSDIS=-2A,VGS =0V; Ta =25 ℃; pulse width ≤ 300us, duty cycle≤ 2%typ -0.83 · max -1.2 V2

Pins, by the datasheet

3
1 Gate
Gate. · p. 1
2 Source
Source. · p. 1
3 Drain
Drain. · p. 1

Open-source boards using it

1
  • 6 layers56 × 85 mmSunSproutHub, the printed circuit board in 3D

    SunSproutHub

    JohnNeville/SunSprout

    An esp32-c5 powered board that adds dual source battery charging, fuel management, and differential i2c bus. This was largely developed to be a complement with my other soil sensor project.

    142 partsCERN-OHL-S-2.0

Parts like it

8

Questions

Is there a KiCad symbol and footprint for the MDD3415?

Yes. the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.

What package is the MDD3415?

SOT-23, with 3 pins. Its footprint is drawn on this page.

Where is the MDD3415 datasheet?

MDD publishes it: the Datasheet link on this page opens it.

Where can I order the MDD3415?

JLCPCB lists it as part C840839, with 381,887 in stock; the sellers' links on this page open their listings.

What can replace the MDD3415?

Parts like it in the library: the AP40P05 by ALLPOWER, the AO3415A by Alpha & Omega Semiconductor, the 5N10-MS by MSKSEMI and the MDD3400 by MDD. Check their datasheets: a part that fits the footprint may still differ in its ratings.

Which open-source boards use the MDD3415?

1 board in 1 repository on GitHub; the most starred are listed on this page, with their KiCad files.