4 layers92.3 × 99.8 mm
Bccc sao rp2350a
aerospace-venoms/BCCC_Temperature_SAO
Source files for reconstructing the Beverage Chilling Contraption Contest badge, released at Defcon 2026
109 parts1
Overview
The MDD2302 is a MOSFET made by MDD in a SOT-23 package with 3 pins. -50℃~+150℃ 1 N-channel 1.25W 20V 28mΩ@2.5V 33pF 340pF 4A 5.4nC@10V 500mV SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (JLCPCB-Transistors:NMOS,MDD2302, from Cdfer) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 146,373 are in stock at JLCPCB (part C427390). 2 open-source boards in 2 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
10- Drain-source, most
- 20 V · VDS, absolute maximum · p. 1
- Gate-source, most
- 12 V · VGS, absolute maximum magnitude (±12 V) · p. 1
- Drain current, most
- 4 A · ID, continuous maximum at TA = 25℃ · p. 1
- Junction, hottest
- 150 °C · TJ, absolute maximum · p. 1
- Junction to air (SOT-23)
- 100 K/W · RθJA, rated maximum on 1 in2 FR-4 board with 2oz copper, double sided, still air · p. 1
- On resistance
- 25 mΩ · Typical at VGS = 4.5V, ID = 4A · p. 2
- On resistance
- 28 mΩ · Typical at VGS = 2.5V, ID = 3A · p. 2
- Gate threshold
- 800 mV · Typical at VDS = VGS, ID = 250uA · p. 2
- Forward voltage
- 1.2 V · Body diode maximum at IS = 1A, VGS = 0V · p. 2
- Forward current, most
- 1.6 A · Body diode maximum at TA = 25℃ · p. 2
What it is and has
2- Technology
- Advanced trench process technology · p. 1
- Cell design
- High Density Cell Design For Ultra Low On-Resistance · p. 1
Specifications
25| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDS | TA=25℃ | max 20 V | 1 |
| Gate-Source Voltage VGS | TA=25℃; ±12 V limit | min -12 · max 12 V | 1 |
| Continuous Drain Current ID | TA=25℃ | max 4 A | 1 |
| Pulsed Drain Current (Note 1) IDM | TA=25℃; pulse width limited by maximum allowable junction temperature | max 12 A | 1 |
| Power Dissipation(Note 2) PD | TA=25℃; mounted on 1 in2 FR-4 board with 2oz copper, double sided, still air | max 1.25 W | 1 |
| Thermal Resistance from Junction to Ambient(Note 2) RθJA | SOT-23; TA=25℃; mounted on 1 in2 FR-4 board with 2oz copper, double sided, still air | max 100 ℃/W | 1 |
| Junction Temperature and Storage Temperature TJ,Tstg | min -50 · max 150 ℃ | 1 | |
| Drain-Source Breakdown Voltage V(BR)DSS | Ta = 25℃; VGS=0V, ID=250uA | min 20 V | 2 |
| Drain-Source Leakage Current IDSS | Ta = 25℃; VDS=20V, VGS=0V | max 1 uA | 2 |
| Gate-Source Leakage Current IGSS | Ta = 25℃; VGS=±10V, VDS=0V; maximum magnitude ±100 nA | max 100 nA | 2 |
| Gate Threshold Voltage VGS(TH) | Ta = 25℃; VDS=VGS, ID=250uA | min 0.5 · typ 0.8 · max 1.2 V | 2 |
| Drain-Source On-State Resistance(Note 3) RDS(ON) | Ta = 25℃; VGS=4.5V, ID=4A; pulse width≤300us, duty cycle≤2% | typ 25 · max 30 mΩ | 2 |
| Drain-Source On-State Resistance(Note 3) RDS(ON) | Ta = 25℃; VGS=2.5V, ID=3A; pulse width≤300us, duty cycle≤2% | typ 28 · max 35 mΩ | 2 |
| Input Capacitance Ciss | Ta = 25℃; VDS=10V, VGS=0V, f=1MHz | typ 340 pF | 2 |
| Output Capacitance Coss | Ta = 25℃; VDS=10V, VGS=0V, f=1MHz | typ 115 pF | 2 |
| Reverse Transfer Capacitance Crss | Ta = 25℃; VDS=10V, VGS=0V, f=1MHz | typ 33 pF | 2 |
| Total Gate Charge Qg | Ta = 25℃; VDS=10V, VGS=4.5V, ID=3A | typ 5.4 nC | 2 |
| Gate Source Charge Qgs | Ta = 25℃; VDS=10V, VGS=4.5V, ID=3A | typ 0.65 nC | 2 |
| Gate Drain Charge Qgd | Ta = 25℃; VDS=10V, VGS=4.5V, ID=3A | typ 1.6 nC | 2 |
| Turn on Delay Time td(on) | Ta = 25℃; VDS=10V, VGS=4.5V, ID=3A, RG=6Ω, RL=5.5Ω | typ 12 ns | 2 |
| Turn on Rise Time tr | Ta = 25℃; VDS=10V, VGS=4.5V, ID=3A, RG=6Ω, RL=5.5Ω | typ 36 ns | 2 |
| Turn Off Delay Time td(off) | Ta = 25℃; VDS=10V, VGS=4.5V, ID=3A, RG=6Ω, RL=5.5Ω | typ 34 ns | 2 |
| Turn Off Fall Time tf | Ta = 25℃; VDS=10V, VGS=4.5V, ID=3A, RG=6Ω, RL=5.5Ω | typ 10 ns | 2 |
| Source drain current(Body Diode) ISD | TA=25℃ | max 1.6 A | 2 |
| Drain-Source Diode Forward Voltage VSD | Ta = 25℃; IS=1A, VGS=0V | max 1.2 V | 2 |
Pins, by the datasheet
3- 1 Gate
- Gate. · p. 1
- 2 Source
- Source. · p. 1
- 3 Drain
- Drain. · p. 1
Parameters
14- Current - Continuous Drain(Id)
- 4A
- Drain to Source Voltage
- 20V
- Forward Current(If)
- 1.6A
- Gate Charge(Qg)
- 5.4nC@10V
- Gate Threshold Voltage (Vgs(th))
- 800mV
- Input Capacitance(Ciss)
- 340pF
- Junction Temperature(Max)
- 150℃
- Number
- 1 N-channel
- Operating Temperature
- -50℃~+150℃
- Pd - Power Dissipation
- 1.25W
- RDS(on)
- 28mΩ@2.5V
- Reverse Transfer Capacitance (Crss@Vds)
- 33pF
- Thermal Resistance(Junction to Ambient)
- 100℃/W
- Voltage - Forward(Vf)
- 1.2V
Order codes
2- MDD2302LCSC C427390
- MDD2302LCSC C5299411
Pinout
3| Pin | Name | Type |
|---|---|---|
| 1 | G | Input |
| 2 | S | Passive |
| 3 | D | Passive |
Open-source boards using it
All 2- 4 layers52.6 × 40 mm
BioSensorBox
JH2k00/BioSensorBox
This repository contains the hardware and software for my project in the Advanced Topics in PCB Design lecture at the Technical University of Darmstadt
56 parts
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Is there a KiCad symbol and footprint for the MDD2302?
Yes. The symbol is JLCPCB-Transistors:NMOS,MDD2302 and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the MDD2302?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the MDD2302 datasheet?
MDD publishes it: the Datasheet link on this page opens it.
Where can I order the MDD2302?
JLCPCB lists it as part C427390, with 146,373 in stock; the sellers' links on this page open their listings.
What can replace the MDD2302?
Parts like it in the library: the AP2300 by ALLPOWER, the AO3400A by Alpha & Omega Semiconductor, the AO3400A by UMW and the AO3401A by UMW. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the MDD2302?
2 boards in 2 repositories on GitHub; the most starred are listed on this page, with their KiCad files.
Parts like it
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