Overview
The INN650D080BS is a gaN Transistor made by Innoscience in a DFN-8(8x8) package with 9 pins. -55℃~+150℃ 0.5pF 1.7V 188W 225pF 29A 6.2nC 60mΩ 650V 70pF E-mode DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS.
PCBKit's library has its footprint (EasyEDA_Cloud:DFN-8_L8.0-W8.0-P2.00-BL-EP, from EasyEDA), ready for a KiCad board. 2,236 are in stock at JLCPCB (part C20616646).
Symbol
The library has no symbol for this part yet.
Footprint
Parameters
13- Ciss-Input Capacitance
- 225pF
- Current - Continuous Drain(Id)
- 29A
- Drain to Source Voltage
- 650V
- Gate Charge(Qg)
- 6.2nC
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Number
- 1 N-channel
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 70pF
- Pd - Power Dissipation
- 188W
- RDS(on)
- 60mΩ
- Reverse Transfer Capacitance (Crss)
- 0.5pF
- Technology
- E-mode
- Type
- N-Channel
Order codes
1- INN650D080BSLCSC C20616646
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Is there a KiCad symbol and footprint for the INN650D080BS?
Yes. the footprint EasyEDA_Cloud:DFN-8_L8.0-W8.0-P2.00-BL-EP, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the INN650D080BS?
DFN-8(8x8), with 9 pins. Its footprint is drawn on this page.
Where is the INN650D080BS datasheet?
Innoscience publishes it: the Datasheet link on this page opens it.
Where can I order the INN650D080BS?
JLCPCB lists it as part C20616646, with 2,236 in stock; the sellers' links on this page open their listings.