2 layers98 × 56 mm
Thermal pcb
Badbird5907/thermal-camera
My design of a cheap and affordable thermal camera
68 parts59MIT
AO3415
GOODWORKExtended
-55℃~+150℃ 1 P-Channel 1.2W 1.45nF 160pF 17.2nC@4.5V 1V 205pF 20V 4A 50mΩ@4.5V P-Channel SOT-23 MOSFETs ROHS
- Part id
- goodwork/AO3415
- Category
- MOSFETs
- Package
- SOT-23
- Pins
- 3
- In stock
- 83,395 at JLCPCB (C2938370)
- Used on
- 21 open-source boards
Overview
The AO3415 is a MOSFET made by GOODWORK in a SOT-23 package with 3 pins. -55℃~+150℃ 1 P-Channel 1.2W 1.45nF 160pF 17.2nC@4.5V 1V 205pF 20V 4A 50mΩ@4.5V P-Channel SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PMOS_1G_2S_3D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 83,395 are in stock at JLCPCB (part C2938370). 21 open-source boards in 17 repositories on GitHub use it.
Symbol
Footprint
From the datasheet
9- Drain-source, most
- 20 V · Drain-source voltage, absolute maximum · p. 1
- Gate-source, most
- 12 V · Gate-source voltage, absolute maximum magnitude ±12 V · p. 1
- Drain current, most
- 4 A · Continuous drain current, maximum at Ta = 25 °C, t ≤ 10 s · p. 1
- Junction, hottest
- 150 °C · Operating junction temperature, maximum · p. 1
- Junction to air (SOT-23)
- 357 K/W · Junction-to-ambient thermal resistance · p. 1
- Gate threshold
- 560 mV · Typical, VDS = VGS, ID = -250 uA · p. 2
- On resistance
- 30 mΩ · Typical, VGS = -4.5 V, ID = -4 A · p. 2
- On resistance
- 38 mΩ · Typical, VGS = -2.5 V, ID = -3 A · p. 2
- On resistance
- 50 mΩ · Typical, VGS = -1.8 V, ID = -2 A · p. 2
What it is and has
3- Cell design
- High density cell design for low RDS(ON) · p. 1
- Switch
- Voltage controlled small signal switch · p. 1
- Package
- SOT-23 · p. 1
Specifications
28| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDS | Ta = 25℃ | max -20 V | 1 |
| Gate-Source Voltage VGS | Ta = 25℃; ±12 V | min -12 · max 12 V | 1 |
| Continuous Drain Current (t≤10s) ID | Ta = 25℃; t≤10s | max -4 A | 1 |
| Maximum Power Dissipation (t≤10s) PD | Ta = 25℃; t≤10s | max 1.2 W | 1 |
| Thermal Resistance from Junction to Ambient RθJA | SOT-23; Ta = 25℃ | max 357 ℃/W | 1 |
| Operating Junction Temperature TJ | max 150 ℃ | 1 | |
| Storage Temperature TSTG | min -55 · max 150 ℃ | 1 | |
| Drain-source breakdown voltage V(BR) DSS | Ta =25 ℃; VGS = 0V, ID =-250uA | min -20 V | 2 |
| Gate threshold voltage VGS(th) | Ta =25 ℃; VDS =VGS, ID =-250uA | min -0.3 · typ -0.56 · max -1.2 V | 2 |
| Gate-body leakage current IGSS | Ta =25 ℃; VDS =0V, VGS =±8V; maximum ±10 uA | max 10 uA | 2 |
| Gate-body leakage current IGSS | Ta =25 ℃; VDS =0V, VGS =±4.5V; maximum ±1 uA | max 1 uA | 2 |
| Zero gate voltage drain current IDSS | Ta =25 ℃; VDS =-16V, VGS =0V | max -1 uA | 2 |
| Drain-source on-state resistance(note1) RDS(on) | Ta =25 ℃; VGS =-4.5V, ID =-4A | typ 0.03 · max 0.045 Ω | 2 |
| Drain-source on-state resistance(note1) RDS(on) | Ta =25 ℃; VGS =-2.5V, ID =-3A | typ 0.038 · max 0.06 Ω | 2 |
| Drain-source on-state resistance(note1) RDS(on) | Ta =25 ℃; VGS =-1.8V, ID =-2A | typ 0.05 · max 0.073 Ω | 2 |
| Forward transconductance(note2) gFS | Ta =25 ℃; VDS =-5V, ID =-4A | min 8 S | 2 |
| Body diode voltage(note2) VSD | Ta =25 ℃; IS=-1A,VGS =0V | max -1 V | 2 |
| Input capacitance Ciss | Ta =25 ℃; VDS =-10V,VGS =0V,f =1MHz | typ 1450 pF | 2 |
| Output capacitance Coss | Ta =25 ℃; VDS =-10V,VGS =0V,f =1MHz | typ 205 pF | 2 |
| Reverse transfer capacitance Crss | Ta =25 ℃; VDS =-10V,VGS =0V,f =1MHz | typ 160 pF | 2 |
| Gate resistance Rg | Ta =25 ℃; VDS =0V,VGS =0V,f =1MHz | typ 6.5 Ω | 2 |
| Total gate charge Qg | Ta =25 ℃; VDS =-10V,VGS =-4.5V,ID =-4A | typ 17.2 nC | 2 |
| Gate-Source charge Qgs | Ta =25 ℃; VDS =-10V,VGS =-4.5V,ID =-4A | typ 1.3 nC | 2 |
| Gate-drain charge Qgd | Ta =25 ℃; VDS =-10V,VGS =-4.5V,ID =-4A | typ 4.5 nC | 2 |
| Turn-on delay time (note3) td(on) | Ta =25 ℃; VDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω | typ 9.5 ns | 2 |
| Turn-on rise time(note3) tr | Ta =25 ℃; VDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω | typ 17 ns | 2 |
| Turn-off delay time(note3) td(off) | Ta =25 ℃; VDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω | typ 94 ns | 2 |
| Turn-off fall time(note3) tf | Ta =25 ℃; VDS=-10V, VGS=-4.5V; RGEN =3Ω, RL=2.5Ω | typ 35 ns | 2 |
Pins, by the datasheet
3- 1 GATE
- Gate. · p. 1
- 2 SOURCE
- Source. · p. 1
- 3 DRAIN
- Drain. · p. 1
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Questions
Is there a KiCad symbol and footprint for the AO3415?
Yes. The symbol is Pinmap_Generic:Q_PMOS_1G_2S_3D and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the AO3415?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the AO3415 datasheet?
GOODWORK publishes it: the Datasheet link on this page opens it.
Where can I order the AO3415?
JLCPCB lists it as part C2938370, with 83,395 in stock; the sellers' links on this page open their listings.
What can replace the AO3415?
Parts like it in the library: the AP2300 by ALLPOWER, the AO3400A by Alpha & Omega Semiconductor, the AO3400A by UMW and the AO3401A by UMW. Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the AO3415?
21 boards in 17 repositories on GitHub; the most starred are listed on this page, with their KiCad files.