2 layers
DMP6350S
Diodes IncorporatedExtended
-55℃~+150℃ 1 P-Channel 1.17W 1.5A 206pF 3V 4.1nC@10V 550mΩ@4.5V 60V SOT-23 MOSFETs ROHS
- Part id
- diodes/DMP6350S
- Category
- MOSFETs
- Package
- SOT-23
- Pins
- 3
- In stock
- 8 at JLCPCB (C155308)
- Used on
- 1 open-source board
Overview
The DMP6350S is a MOSFET made by Diodes Incorporated in a SOT-23 package with 3 pins. -55℃~+150℃ 1 P-Channel 1.17W 1.5A 206pF 3V 4.1nC@10V 550mΩ@4.5V 60V SOT-23 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PMOS_1G_2S_3D, from PCBKit's generic symbols) and its footprint (Package_TO_SOT_SMD:SOT-23, from KiCad's library), ready for a KiCad board. 8 are in stock at JLCPCB (part C155308). 1 open-source board in 1 repository on GitHub use it.
Symbol
Footprint
From the datasheet
11- Drain-source, most
- 60 V · VDSS, absolute maximum · p. 2
- Gate-source, most
- 20 V · VGSS, absolute maximum magnitude ±20 V · p. 2
- Drain current, most
- 1.5 A · ID, continuous max at TA = +25°C, VGS = -10V, Note 6 · p. 2
- On resistance
- 350 mΩ · max, VGS = -10V, ID = -0.9A · p. 2
- On resistance
- 550 mΩ · max, VGS = -4.5V, ID = -0.8A · p. 2
- Gate threshold
- 1.8 V · typical, VDS = VGS, ID = -250uA · p. 2
- Junction, hottest
- 150 °C · TJ, operating maximum · p. 2
- Junction to air (SOT23)
- 176 K/W · minimum recommended pad layout, TA = +25°C, Note 5 · p. 2
- Junction to air (SOT23)
- 108 K/W · 1inch square copper plate, TA = +25°C, Note 6 · p. 2
- Junction to case (SOT23)
- 34 K/W · junction to case · p. 2
- Edge
- 3.8 ns · typical rise time, VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω · p. 2
What it is and has
5- Device type
- 60V P-channel enhancement mode MOSFET · p. 1
- Package
- SOT23 · p. 1
- Qualification
- AEC-Q101 · p. 1
- Compliance
- Lead-free and RoHS compliant · p. 1
- Materials
- Halogen and antimony free · p. 1
Specifications
32| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDSS | TA = +25°C unless otherwise specified | max -60 V | 2 |
| Gate-Source Voltage VGSS | TA = +25°C; ±20 V | min -20 · max 20 V | 2 |
| Continuous Drain Current (Note 6), VGS = -10V ID | Steady State; TA = +25°C; FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | max -1.5 A | 2 |
| Continuous Drain Current (Note 6), VGS = -10V ID | Steady State; TA = +70°C; FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | max -1.2 A | 2 |
| Pulsed Drain Current (10us Pulse, Duty Cycle = 1%) IDM | TA = +25°C | max -6 A | 2 |
| Power Dissipation (Note 5) PD | FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout | max 0.72 W | 2 |
| Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA | FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout | max 176 °C/W | 2 |
| Power Dissipation (Note 6) PD | FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | max 1.17 W | 2 |
| Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RθJA | FR-4 substrate PC board, 2oz copper, with 1inch square copper plate | max 108 °C/W | 2 |
| Thermal Resistance, Junction to Case RθJC | max 34 °C/W | 2 | |
| Operating and Storage Temperature Range TJ, TSTG | min -55 · max 150 °C | 2 | |
| Drain-Source Breakdown Voltage BVDSS | TA = +25°C; VGS = 0V, ID = -250uA; Note 7 | min -60 V | 2 |
| Zero Gate Voltage Drain Current IDSS | TJ = +25°C; VDS = -60V, VGS = 0V; Note 7 | max -1 uA | 2 |
| Gate-Source Leakage IGSS | TA = +25°C; VGS = ±20V, VDS = 0V; maximum ±100 nA; Note 7 | max 100 nA | 2 |
| Gate Threshold Voltage VGS(TH) | TA = +25°C; VDS = VGS, ID = -250uA; Note 7 | min -1 · typ -1.8 · max -3 V | 2 |
| Static Drain-Source On-Resistance RDS(ON) | TA = +25°C; VGS = -10V, ID = -0.9A; Note 7 | typ 257 · max 350 mΩ | 2 |
| Static Drain-Source On-Resistance RDS(ON) | TA = +25°C; VGS = -4.5V, ID = -0.8A; Note 7 | typ 343 · max 550 mΩ | 2 |
| Diode Forward Voltage VSD | TA = +25°C; VGS = 0V, IS = -1A; Note 7 | typ -0.8 · max -1.2 V | 2 |
| Input Capacitance Ciss | TA = +25°C; VDS = -30V, VGS = 0V, f = 1.0MHz; Note 8 | typ 206 pF | 2 |
| Output Capacitance Coss | TA = +25°C; VDS = -30V, VGS = 0V, f = 1.0MHz; Note 8 | typ 15 pF | 2 |
| Reverse Transfer Capacitance Crss | TA = +25°C; VDS = -30V, VGS = 0V, f = 1.0MHz; Note 8 | typ 11 pF | 2 |
| Gate Resistance Rg | TA = +25°C; VDS = 0V, VGS = 0V, f = 1MHz; Note 8 | typ 17 Ω | 2 |
| Total Gate Charge (VGS = -4.5V) Qg | TA = +25°C; VDS = -30V, ID = -0.9A; Note 8 | typ 2 nC | 2 |
| Total Gate Charge (VGS = -10V) Qg | TA = +25°C; VDS = -30V, ID = -0.9A; Note 8 | typ 4.1 nC | 2 |
| Gate-Source Charge Qgs | TA = +25°C; VDS = -30V, ID = -0.9A; Note 8 | typ 0.5 nC | 2 |
| Gate-Drain Charge Qgd | TA = +25°C; VDS = -30V, ID = -0.9A; Note 8 | typ 0.8 nC | 2 |
| Turn-On Delay Time tD(ON) | TA = +25°C; VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω; Note 8 | typ 3.6 ns | 2 |
| Turn-On Rise Time tR | TA = +25°C; VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω; Note 8 | typ 3.8 ns | 2 |
| Turn-Off Delay Time tD(OFF) | TA = +25°C; VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω; Note 8 | typ 12.3 ns | 2 |
| Turn-Off Fall Time tF | TA = +25°C; VDD = -30V, VGS = -10V, ID = -1.0A, Rg = 6Ω; Note 8 | typ 7.3 ns | 2 |
| Body Diode Reverse Recovery Time tRR | TA = +25°C; IS = -1.0A, di/dt = -100A/us; Note 8 | typ 8.2 ns | 2 |
| Body Diode Reverse Recovery Charge QRR | TA = +25°C; IS = -1.0A, di/dt = -100A/us; Note 8 | typ 2.7 nC | 2 |
Ordering codes, by the datasheet
2- DMP6350S-7
- SOT23 · 3,000/Tape & Reel · p. 1
- DMP6350S-13
- SOT23 · 10,000/Tape & Reel · p. 1
Open-source boards using it
1Parts like it
8
SI2308A
SOT-23-40℃~+150℃ 1 N-channel 1.25W 15pF 240pF 3A 3V 4.8nC@10V 50pF 60V 80mΩ@10V、95mΩ@4.5V N-Channel SOT-23 MOSFETs ROHSUMWMOSFETsSI2310
SOT-23-55℃~+150℃ 1 N-channel 1.5W 125mΩ@4.5V 19.5pF 247pF 2V 3A 60V 6nC@4.5V N-Channel SOT-23 MOSFETs ROHSGOODWORKMOSFETsAS2324
SOT-23-55℃~+150℃ 1 N-channel 1.2W 100V 17pF 2A 310mΩ@4.5V 330pF 3V 5.3nC@0V N-Channel SOT-23 MOSFETs ROHSAnBonMOSFETsLP2309LT1G
SOT-23(TO-236)-55℃~+150℃ 1 P-Channel 1.4W 1.9A 260mΩ@4.5V 358pF 3V 6.3nC@4.5V 60V P-Channel SOT-23(TO-236) MOSFETs ROHSLeshan Radio (LRC)MOSFETs5N10-MS
SOT-23-55℃~+150℃ 1 N-channel 1.5V 100V 18nC@10V 2.5W 33pF 38pF 5A 765pF 90mΩ@10V N-Channel SOT-23 MOSFETs ROHSMSKSEMIMOSFETsIRLML0060TRPBF
SOT-23-55℃~+150℃ 1 N-channel 1.25W 2.5V 2.5nC 2.7A 21pF 290pF 60V 92mΩ@10V SOT-23 MOSFETs ROHSInfineon TechnologiesMOSFETsFDN5618P
SOT-23-55℃~+150℃ 1 P-Channel 1.5W 1.6A 11.3nC@10V 17.9pF 2.6V 240mΩ@4.5V 444.2pF 60V SOT-23 MOSFETs ROHSTECH PUBLICMOSFETsDMN6140L
SOT-23-55℃~+150℃ 1 N-channel 16pF 170mΩ@4.5V 2.3A 315pF 3V 60V 700mW 8.6nC@10V SOT-23 MOSFETs ROHSDiodes IncorporatedMOSFETs
Questions
Is there a KiCad symbol and footprint for the DMP6350S?
Yes. The symbol is Pinmap_Generic:Q_PMOS_1G_2S_3D and the footprint Package_TO_SOT_SMD:SOT-23, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the DMP6350S?
SOT-23, with 3 pins. Its footprint is drawn on this page.
Where is the DMP6350S datasheet?
Diodes Incorporated publishes it: the Datasheet link on this page opens it.
Where can I order the DMP6350S?
JLCPCB lists it as part C155308, with 8 in stock; the sellers' links on this page open their listings.
What can replace the DMP6350S?
Parts like it in the library: the SI2308A by UMW, the SI2310 by GOODWORK, the AS2324 by AnBon and the LP2309LT1G by Leshan Radio (LRC). Check their datasheets: a part that fits the footprint may still differ in its ratings.
Which open-source boards use the DMP6350S?
1 board in 1 repository on GitHub; the most starred are listed on this page, with their KiCad files.