Overview
The DMP6023LFG is a MOSFET made by Diodes Incorporated in a PowerDI3333-8 package with 5 pins. -55℃~+150℃ 1 P-Channel 143pF 2.1W 2.569nF 33mΩ@4.5V 3V 53.1nC@10V 60V 7.7A PowerDI3333-8 MOSFETs ROHS.
PCBKit's library has its KiCad symbol (Pinmap_Generic:Q_PMOS_1S_2S_3S_4G_5D, from PCBKit's generic symbols) and its footprint (EasyEDA_Cloud:POWERDI3333-8_L3.3-W3.3-P0.65-BL, from EasyEDA), ready for a KiCad board. 3,222 are in stock at JLCPCB (part C780842).
Symbol
Footprint
From the datasheet
13- Drain-source, most
- 60 V · VDSS, absolute maximum · p. 2
- Gate-source, most
- 20 V · VGSS, absolute maximum magnitude, ±20 V · p. 2
- Drain current, most
- 7.7 A · ID, continuous maximum at TA = +25°C, VGS = -10V, steady state, Note 6 · p. 2
- On resistance
- 25 mΩ · RDS (ON), max, VGS = -10V, ID = -5A · p. 2
- On resistance
- 33 mΩ · RDS (ON), max, VGS = -4.5V, ID = -4A · p. 2
- Gate threshold
- 3 V · VGS(th), max, VDS = VGS, ID = -250uA · p. 2
- Junction, hottest
- 150 °C · TJ, maximum operating junction temperature · p. 2
- Junction to air (POWERDI3333-8)
- 123 K/W · RθJA, steady state, Note 5 · p. 2
- Junction to air (POWERDI3333-8)
- 69 K/W · RθJA, t<10s, Note 5 · p. 2
- Junction to air (POWERDI3333-8)
- 60 K/W · RθJA, steady state, Note 6 · p. 2
- Junction to air (POWERDI3333-8)
- 34 K/W · RθJA, t<10s, Note 6 · p. 2
- Junction to case (POWERDI3333-8)
- 6.3 K/W · RθJC, Note 6 · p. 2
- Edge
- 7.1 ns · Rise time, typical, VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A · p. 2
What it is and has
6- MOSFET type
- 60V P-channel enhancement mode · p. 1
- Qualification
- AEC-Q101 · p. 1
- Compliance
- Lead-free, RoHS compliant · p. 1
- Materials
- Halogen and antimony free · p. 1
- Package
- POWERDI®3333-8 · p. 1
- Moisture sensitivity
- Level 1 per J-STD-020 · p. 1
Specifications
39| Parameter | Conditions | As printed | Page |
|---|---|---|---|
| Drain-Source Voltage VDSS | TA = +25°C | max -60 V | 2 |
| Gate-Source Voltage VGSS | TA = +25°C | min -20 · max 20 V | 2 |
| Continuous Drain Current (Note 6) VGS = -10V ID | Steady State, TA = +25°C | max -7.7 A | 2 |
| Continuous Drain Current (Note 6) VGS = -10V ID | Steady State, TA = +70°C | max -6.2 A | 2 |
| Continuous Drain Current (Note 6) VGS = -10V ID | t<10s, TA = +25°C | max -10.3 A | 2 |
| Continuous Drain Current (Note 6) VGS = -10V ID | t<10s, TA = +70°C | max -8.2 A | 2 |
| Pulsed Drain Current (10us pulse, duty cycle = 1%) IDM | TA = +25°C | max -55 A | 2 |
| Maximum Continuous Body Diode Forward Current (Note 6) IS | TA = +25°C | max -2.2 A | 2 |
| Avalanche Current, L = 0.1mH IAS | TA = +25°C | max -35.5 A | 2 |
| Avalanche Energy, L = 0.1mH EAS | TA = +25°C | max 62.9 mJ | 2 |
| Total Power Dissipation (Note 5) PD | TA = +25°C | max 1 W | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) RJA | Steady State, TA = +25°C | max 123 °C/W | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) RJA | t<10s, TA = +25°C | max 69 °C/W | 2 |
| Total Power Dissipation (Note 6) PD | TA = +25°C | max 2.1 W | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) RJA | Steady State, TA = +25°C | max 60 °C/W | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) RJA | t<10s, TA = +25°C | max 34 °C/W | 2 |
| Thermal Resistance, Junction to Case (Note 6) RJC | TA = +25°C | max 6.3 °C/W | 2 |
| Operating and Storage Temperature Range TJ, TSTG | min -55 · max 150 °C | 2 | |
| Drain-Source Breakdown Voltage BVDSS | TA = +25°C; Note 7; VGS = 0V, ID = -250uA | min -60 V | 2 |
| Zero Gate Voltage Drain Current TJ = +25°C IDSS | TA = +25°C; Note 7; VDS = -60V, VGS = 0V | max -1 uA | 2 |
| Gate-Source Leakage IGSS | TA = +25°C; Note 7; VGS = ±20V, VDS = 0V; limit ±100 nA | max 100 nA | 2 |
| Gate Threshold Voltage VGS(th) | TA = +25°C; Note 7; VDS = VGS, ID = -250uA | min -1 · max -3 V | 2 |
| Static Drain-Source On-Resistance RDS (ON) | TA = +25°C; Note 7; VGS = -10V, ID = -5A | max 25 mΩ | 2 |
| Static Drain-Source On-Resistance RDS (ON) | TA = +25°C; Note 7; VGS = -4.5V, ID = -4A | max 33 mΩ | 2 |
| Diode Forward Voltage VSD | TA = +25°C; Note 7; VGS = 0V, IS = -1A | typ -0.7 · max -1.2 V | 2 |
| Input Capacitance Ciss | TA = +25°C; Note 8; VDS = -30V, VGS = 0V, f = 1MHz | typ 2569 pF | 2 |
| Output Capacitance Coss | TA = +25°C; Note 8; VDS = -30V, VGS = 0V, f = 1MHz | typ 179 pF | 2 |
| Reverse Transfer Capacitance Crss | TA = +25°C; Note 8; VDS = -30V, VGS = 0V, f = 1MHz | typ 143 pF | 2 |
| Gate Resistance Rg | TA = +25°C; Note 8; VDS = 0V, VGS = 0V, f = 1MHz | typ 8 Ω | 2 |
| Total Gate Charge (VGS = -4.5V,) Qg | TA = +25°C; Note 8; VDS = -30V, ID = -5A | typ 26.5 nC | 2 |
| Total Gate Charge (VGS = -10V), Qg | TA = +25°C; Note 8; VDS = -30V, ID = -5A | typ 53.1 nC | 2 |
| Gate-Source Charge Qgs | TA = +25°C; Note 8; VDS = -30V, ID = -5A | typ 7.1 nC | 2 |
| Gate-Drain Charge Qgd | TA = +25°C; Note 8; VDS = -30V, ID = -5A | typ 12.6 nC | 2 |
| Turn-On Delay Time tD(on) | TA = +25°C; Note 8; VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A | typ 6 ns | 2 |
| Turn-On Rise Time tr | TA = +25°C; Note 8; VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A | typ 7.1 ns | 2 |
| Turn-Off Delay Time tD(off) | TA = +25°C; Note 8; VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A | typ 110 ns | 2 |
| Turn-Off Fall Time tf | TA = +25°C; Note 8; VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A | typ 62 ns | 2 |
| Body Diode Reverse Recovery Time trr | TA = +25°C; Note 8; IF = -5A, di/dt = 100A/us | typ 20 ns | 2 |
| Body Diode Reverse Recovery Charge Qrr | TA = +25°C; Note 8; IF = -5A, di/dt = 100A/us | typ 14 nC | 2 |
Ordering codes, by the datasheet
2- DMP6023LFG-7
- POWERDI3333-8 · 2,000/Tape & Reel · p. 1
- DMP6023LFG-13
- POWERDI3333-8 · 3,000/Tape & Reel · p. 1
Parts like it
8DMN6069SFGQ
PowerDI3333-8MOSFETsDiodes IncorporatedDMP6023LFGQ
PowerDI3333-8-55℃~+150℃ 1 P-Channel 11mΩ@10V、13mΩ@4.5V 143pF 179pF 2.1W 2.569nF 26.5nC@4.5V、53.1nC@10V 3V 60V 7.7A P-Channel PowerDI3333-8 MOSFETs ROHSDiodes IncorporatedMOSFETsDMN6069SFG
PowerDI3333-8-55℃~+150℃ 1.48nF 18A 2.4W 25nC@10V 3V 55pF 60V 63mΩ@4.5V 80pF N-Channel PowerDI3333-8 MOSFETs ROHSDiodes IncorporatedMOSFETsFDMC86320
WDFN-8(3.3x3.3)-55℃~+150℃ 1 N-channel 10.7A、22A 11.7mΩ@10V 12pF 2.3W、40W 2.64nF 4.5V 41nC@10V 80V WDFN-8(3.3x3.3) MOSFETs ROHSonsemiMOSFETsDMT10H009LCG
VDFN3333-8-55℃~+150℃ 1 N-channel 100V 13.7pF 2.1W 2.309nF 2.5V 20.2nC@10V 47A 8.8mΩ@10V VDFN3333-8 MOSFETs ROHSDiodes IncorporatedMOSFETsDMT6010LFG
PowerDI3333-8-55℃~+150℃ 1 N-channel 2.09nF 2.2W 2V 30A 38.5pF 41.3nC 60V 7.5mΩ@10V PowerDI3333-8 MOSFETs ROHSDiodes IncorporatedMOSFETsFDMC86102
Power-33-55℃~+150℃ 1 N-channel 100V 18nC@10V 2.3W 20A 25pF 2V 38mΩ@6V 965pF Power-33 MOSFETs ROHSonsemiMOSFETsFDMC86570L
Power(3x3)-55℃~+150℃ 1 N-channel 30pF 3V 54W 6.5mΩ@4.5V 6.705nF 60V 84A 88nC@10V N-Channel Power(3x3) MOSFETs ROHSonsemiMOSFETs
Questions
Is there a KiCad symbol and footprint for the DMP6023LFG?
Yes. The symbol is Pinmap_Generic:Q_PMOS_1S_2S_3S_4G_5D and the footprint EasyEDA_Cloud:POWERDI3333-8_L3.3-W3.3-P0.65-BL, both drawn on this page. PCBKit places them on a board for you when you design with it.
What package is the DMP6023LFG?
PowerDI3333-8, with 5 pins. Its footprint is drawn on this page.
Where is the DMP6023LFG datasheet?
Diodes Incorporated publishes it: the Datasheet link on this page opens it.
Where can I order the DMP6023LFG?
JLCPCB lists it as part C780842, with 3,222 in stock; the sellers' links on this page open their listings.
What can replace the DMP6023LFG?
Parts like it in the library: the DMN6069SFGQ by Diodes Incorporated, the DMP6023LFGQ by Diodes Incorporated, the DMN6069SFG by Diodes Incorporated and the FDMC86320 by onsemi. Check their datasheets: a part that fits the footprint may still differ in its ratings.